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    • 7. 发明授权
    • Thin film transistor array and displaying apparatus
    • 薄膜晶体管阵列和显示装置
    • US08779434B2
    • 2014-07-15
    • US12246134
    • 2008-10-06
    • Takao InoueTakumi YamagaAtsushi Onodera
    • Takao InoueTakumi YamagaAtsushi Onodera
    • H01L27/14H01L29/417
    • H01L29/41733H01L27/124H01L29/42384
    • A thin film transistor array is disclosed. The thin film transistor array includes plural gate electrodes formed on an insulation substrate, plural source electrodes formed above or under the gate electrodes via a gate insulation film so that the source electrodes cross the gate electrodes in a planar view, plural drain electrodes formed at corresponding positions surrounded by the gate electrodes and the source electrodes in a planar view in the same layer as that of the source electrodes, semiconductor layers formed via the gate insulation film to face the gate electrodes for forming corresponding channel regions between the source electrodes and the drain electrodes. The plural gate electrodes are linearly formed, and the channel regions are disposed to face the gate electrodes.
    • 公开了一种薄膜晶体管阵列。 薄膜晶体管阵列包括形成在绝缘基板上的多个栅电极,通过栅极绝缘膜形成在栅极电极上方或下方的多个源电极,使得源电极在平面图中与栅电极交叉,形成在相应的 位于与源极电极相同的平面图中由栅极电极和源极电极围绕的位置,经由栅极绝缘膜形成的面向栅电极的半导体层,用于在源电极和漏极之间形成相应的沟道区域 电极。 多个栅电极被线性地形成,并且沟道区被设置为面对栅电极。