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1. 发明授权

US5680091A Magnetoresistive device and method of preparing the same 失效
标题翻译：磁阻装置及其制备方法
公开(公告)号：US5680091A
公开(公告)日：1997-10-21
申请号：US524746
申请日：1995-09-07
申请人： Atsushi Maeda , Toshio Tanuma , Minoru Kume , Kazuhiko Kuroki
发明人： Atsushi Maeda , Toshio Tanuma , Minoru Kume , Kazuhiko Kuroki
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01L43/08 , H01L43/00
CPC分类号： B82Y25/00 , H01F10/324 , H01L43/08
摘要： A magnetoresistive device includes a substrate and a magnetic film which is formed by alternately stacking magnetic and non-magnetic layers with each other on the substrate. The substrate is prepared to have a texture on its surface, and the magnetic film is formed on this substrate so that a texture is formed along the interface between the magnetic and non-magnetic layers. The texture can be an atomic level texture with step features dimensioned dependent upon the lattice constant, or may be an etched texture of features having desired dimensions in a specified range.
摘要翻译：磁阻装置包括基板和通过在基板上彼此交替堆叠磁性和非磁性层而形成的磁性膜。准备基板在其表面上具有纹理，并且在该基板上形成磁性膜，使得沿着磁性层和非磁性层之间的界面形成纹理。纹理可以是具有取决于晶格常数的步长特征的原子级结构，或者可以是具有在指定范围内具有期望尺寸的特征的蚀刻纹理。

2. 发明授权

US5818323A Magnetoresistive device 失效
标题翻译：磁阻器件
公开(公告)号：US5818323A
公开(公告)日：1998-10-06
申请号：US524751
申请日：1995-09-07
申请人： Atsushi Maeda , Satoru Oikawa , Toshio Tanuma , Minoru Kume , Kazuhiko Kuroki
发明人： Atsushi Maeda , Satoru Oikawa , Toshio Tanuma , Minoru Kume , Kazuhiko Kuroki
IPC分类号： G11B5/39 , H01F10/32 , H01L43/10 , H01L43/00
CPC分类号： B82Y25/00 , B82Y10/00 , H01F10/3227 , H01L43/10 , G11B5/3903 , Y10T428/12014
摘要： A magnetoresistive device has an alloy film, including a ferromagnetic substance and a non-magnetic substance which is not soluble in solid phase in the ferromagnetic substance or is in a eutectic relation with the ferromagentic substance. The ferromagnetic substance forms grains in the non-magnetic substance, and the grains preferably have anisotropic shapes. The non-magnetic substance is conducting. The alloy film is composed of a plurality of alloy film stripes. Alternatively the magneto-resistive device includes a non-magnetic layer arranged between first and second magnetic layers, wherein the non-magnetic layer has 10 to 50 weight percent of grains of a magnetic substance dispersed therein.
摘要翻译：磁阻器件具有合金膜，其包括铁磁物质和在铁磁物质中不溶于固相的非磁性物质，或与铁质物质呈共晶关系。铁磁物质在非磁性物质中形成晶粒，并且晶粒优选具有各向异性形状。非磁性物质是导电的。合金膜由多个合金膜条纹构成。或者，磁阻装置包括布置在第一和第二磁性层之间的非磁性层，其中非磁性层具有分散在其中的磁性物质的10至50重量％的颗粒。

3. 发明授权

US5695858A Magnetoresistive element 失效
标题翻译：磁阻元件
公开(公告)号：US5695858A
公开(公告)日：1997-12-09
申请号：US406671
申请日：1995-03-20
申请人： Atsushi Maeda , Minoru Kume , Toshio Tanuma
发明人： Atsushi Maeda , Minoru Kume , Toshio Tanuma
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , H01L43/00 , B32B7/02
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/398 , H01L43/08 , G11B2005/3996 , Y10S428/90 , Y10T428/1171 , Y10T428/12465 , Y10T428/24917
摘要： A magnetoresistive element includes a substrate, and a plurality of fine line structures, which are provided on the substrate to be substantially parallel to each other, and which each have an aspect ratio greater than 1. Each fine line structure has a multilayer structure of a first ferromagnetic layer, a non-magnetic conductive layer and a second ferromagnetic layer. Magnetic moments of the first and second ferromagnetic layers orient antiparallel to each other in a state with no external magnetic field being applied.
摘要翻译：磁阻元件包括基板和多个细线结构，其设置在基板上以彼此大致平行，并且各自具有大于1的纵横比。每个细线结构具有多层结构第一铁磁层，非磁性导电层和第二铁磁层。在不施加外部磁场的状态下，第一和第二铁磁层的磁矩彼此反平行取向。

4. 发明授权

US6146775A Magnetoresistive film 失效
标题翻译：磁阻膜
公开(公告)号：US6146775A
公开(公告)日：2000-11-14
申请号：US972212
申请日：1997-11-17
申请人： Masayuki Fujita , Atsushi Maeda , Satoru Oikawa , Koji Yamano , Minoru Kume
发明人： Masayuki Fujita , Atsushi Maeda , Satoru Oikawa , Koji Yamano , Minoru Kume
IPC分类号： G11B5/39 , H01F10/32 , H01L43/10 , G11B5/60
CPC分类号： B82Y25/00 , B82Y10/00 , H01F10/3268 , H01L43/10 , G11B2005/3996 , Y10S428/90 , Y10T428/1121
摘要： A magnetoresistive film is disclosed which has a layered structure comprising a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic conductive layer interposed between the first and second ferromagnetic layers, and an antiferromagnetic layer coupled with one of the first and second ferromagnetic layers. The antiferromagnetic layer comprises an antiferromagnetic material selected from an antimony-base alloy, fluoride, an FeRh-base alloy, FeS, an IrMnCo-base alloy and a CrAl-base alloy.
摘要翻译：公开了一种磁阻膜，其具有分层结构，其包括第一铁磁层，第二铁磁层，介于第一和第二铁磁层之间的非磁性导电层，以及与第一和第二铁磁层之一耦合的反铁磁层。反铁磁层包括选自锑基合金，氟化物，FeRh基合金，FeS，IrMnCo基合金和CrAl基合金的反铁磁材料。

5. 发明授权

US5738929A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5738929A
公开(公告)日：1998-04-14
申请号：US766530
申请日：1996-12-13
申请人： Atsushi Maeda , Satoru Oikawa , Minoru Kume
发明人： Atsushi Maeda , Satoru Oikawa , Minoru Kume
IPC分类号： G01R33/09 , G11B5/39 , H01F10/00 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , H01F10/007 , H01L43/10 , G11B2005/3996 , Y10S428/90 , Y10S428/928 , Y10T428/1171 , Y10T428/12465 , Y10T428/12535 , Y10T428/12632 , Y10T428/12861 , Y10T428/12896 , Y10T428/1291 , Y10T428/12917 , Y10T428/12944 , Y10T428/12951 , Y10T428/12986 , Y10T428/12993 , Y10T428/24355 , Y10T428/265
摘要： A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.
摘要翻译：磁阻效应元件包括非磁性衬底，铁磁分散层或铁磁层，以及非磁性金属膜。铁磁分散层是独立且分散地形成在基板上的强磁性金属或合金层。替代铁磁层是形成在具有纹理表面的基底上的强磁性金属或合金的层。非磁性金属膜由至少一种与强磁性金属或合金具有不可溶性关系的原子元素制成，并形成在非磁性基底和铁磁性色散层或铁磁性层上。

6. 发明授权

US5736921A Magnetoresistive element 失效
标题翻译：磁阻元件
公开(公告)号：US5736921A
公开(公告)日：1998-04-07
申请号：US406670
申请日：1995-03-20
申请人： Atsushi Maeda , Satoru Oikawa , Minoru Kume
发明人： Atsushi Maeda , Satoru Oikawa , Minoru Kume
IPC分类号： G01R33/09 , G11B5/39 , H01F10/00 , H01F10/32 , H01L43/10 , H01L43/00
CPC分类号： B82Y25/00 , G01R33/09 , H01F10/007 , H01F10/3227 , H01L43/10 , G11B5/3903
摘要： A magnetoresistive element includes a substrate, a magnetoresistive film arranged on the substrate and prepared from a non-magnetic conductive metal film containing grains consisting of a ferromagnetic metal atom or a ferromagnetic metal alloy dispersed therein so that the grain concentration is varied along the film thickness direction, a pair of current feeding electrodes arranged on the magnetoresistive film, and a pair of voltage reading electrodes arranged on the magnetoresistive film.
摘要翻译：磁阻元件包括基板，磁阻膜，其布置在基板上，并由含有由铁磁性金属原子或强磁性金属合金构成的晶粒的非磁性导电金属膜制备，使得晶粒浓度沿膜厚度变化方向，布置在磁阻膜上的一对电流馈电电极和布置在磁阻膜上的一对电压读取电极。

7. 发明授权

US5656381A Magnetoresistance-effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5656381A
公开(公告)日：1997-08-12
申请号：US216185
申请日：1994-03-22
申请人： Atsushi Maeda , Minoru Kume
发明人： Atsushi Maeda , Minoru Kume
IPC分类号： G11B5/39 , H01F10/00 , H01F10/32 , H01L43/10 , H01F1/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/007 , H01F10/3227 , H01L43/10 , G11B2005/3996 , Y10T428/1171 , Y10T428/12028 , Y10T428/12465 , Y10T428/12986
摘要： A magnetoresistance-effect element includes a substrate, and a magnetoresistance-effect film disposed on the substrate. The magnetoresistance-effect film includes an alloy film containing ferromagnetic metal atoms and non-magnetic metal atoms, which have the property relative to each other that they are mutually insoluble in both solid and liquid phases. The magnetoresistance-effect film further includes at least three soft magnetic films arranged as discontinuous areas in contact with the alloy film and magnetically coupled therewith for reducing an operating magnetic field strength of the element.
摘要翻译：磁阻效应元件包括衬底和设置在衬底上的磁阻效应膜。磁阻效应膜包括含有强磁性金属原子和非磁性金属原子的合金膜，它们彼此具有在固相和液相中彼此不溶的特性。磁阻效应膜还包括至少三个软磁膜，其被布置为与合金膜接触的不连续区域并与其磁耦合，用于降低元件的操作磁场强度。

8. 发明授权

US5585198A Magnetorsistance effect element 失效
标题翻译：磁阻效应元素
公开(公告)号：US5585198A
公开(公告)日：1996-12-17
申请号：US326731
申请日：1994-10-20
申请人： Atsushi Maeda , Satoru Oikawa , Minoru Kume
发明人： Atsushi Maeda , Satoru Oikawa , Minoru Kume
IPC分类号： G01R33/09 , G11B5/39 , H01F10/00 , H01L43/10 , B32B3/10 , B32B15/00 , G11B21/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , H01F10/007 , H01L43/10 , G11B2005/3996 , Y10S428/90 , Y10S428/928 , Y10T428/1171 , Y10T428/12465 , Y10T428/12535 , Y10T428/12632 , Y10T428/12861 , Y10T428/12896 , Y10T428/1291 , Y10T428/12917 , Y10T428/12944 , Y10T428/12951 , Y10T428/12986 , Y10T428/12993 , Y10T428/24355 , Y10T428/265
摘要： A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.
摘要翻译：磁阻效应元件包括非磁性衬底，铁磁分散层或铁磁层，以及非磁性金属膜。铁磁分散层是独立且分散地形成在基板上的强磁性金属或合金层。替代铁磁层是形成在具有纹理表面的基底上的强磁性金属或合金的层。非磁性金属膜由至少一种与强磁性金属或合金具有不可溶性关系的原子元素制成，并形成在非磁性基底和铁磁性色散层或铁磁性层上。

9. 发明授权

US09825314B2 Fuel cell and manufacturing method of expanded metal 有权
公开(公告)号：US09825314B2
公开(公告)日：2017-11-21
申请号：US14112394
申请日：2012-04-18
申请人： Atsushi Maeda , Kazumi Sugita , Atsushi Ida , Shingo Morikawa , Keiji Hashimoto , Satoshi Futami
发明人： Atsushi Maeda , Kazumi Sugita , Atsushi Ida , Shingo Morikawa , Keiji Hashimoto , Satoshi Futami
IPC分类号： H01M8/04082 , H01M8/241 , H01M8/2483 , H01M8/0232 , H01M8/0254 , H01M8/0258 , H01M8/04291 , B21D31/04 , H01M8/1007 , H01M8/1018
CPC分类号： H01M8/04201 , B21D31/04 , H01M8/0232 , H01M8/0254 , H01M8/0258 , H01M8/04291 , H01M8/1007 , H01M8/241 , H01M8/2483 , H01M2008/1095 , Y02P70/56 , Y10T29/18
摘要： A cathode-side gas flow path of a cell that forms part of a fuel cell is formed by a first expanded metal arranged on a gas inlet side, and a second expanded metal arranged on a downstream side. The first expanded metal is such that mesh is arranged in a straight line, and gas that flows on a gas diffusion layer side is separated from gas that flows on a separator side. The gas flowrate on the gas inlet side is reduced, so the amount of produced water that is carried away is reduced. As a result, the gas inlet side is inhibited from becoming dry at high temperatures.

10. 发明授权

US08556048B2 Hydraulic shock absorber 有权
标题翻译：液压减震器
公开(公告)号：US08556048B2
公开(公告)日：2013-10-15
申请号：US12068301
申请日：2008-02-05
申请人： Atsushi Maeda , Reiji Nakagawa
发明人： Atsushi Maeda , Reiji Nakagawa
IPC分类号： F16F9/14
CPC分类号： F16F9/092 , B60G17/08 , B60G2202/24
摘要： A piston connected with a piston rod is fitted in a cylinder having a hydraulic fluid sealed therein. A damping force is generated through extension and compression disk valves and an orifice. Vehicle height adjustment is performed with a self-leveling mechanism by transferring the hydraulic fluid between the cylinder and a hydraulic fluid tank. A bladder of the hydraulic fluid tank is clamped between an outer flange portion of a partition member and a casing. Because the hydraulic fluid tank is formed without welding, it is possible to avoid contamination of the hydraulic fluid by welding sputter and thermal deformation. Provision of an O-ring on the outer flange portion can reduce the pressure acting from a reservoir on the clamped portion of the bladder and hence prevent dislodging of the bladder.
摘要翻译：与活塞杆连接的活塞安装在其中密封有液压流体的气缸中。通过延伸和压缩盘阀和孔口产生阻尼力。通过在液压缸和液压油箱之间传递液压流体，通过自动调平机构执行车辆高度调节。液压油箱的气囊夹在分隔件的外凸缘部分和壳体之间。由于液压油箱不经焊接而形成，因此可以通过溅射和热变形来避免液压油的污染。在外部凸缘部分上设置O形环可以降低作用在气囊夹紧部分上的储存器的压力，从而防止气囊的移动。

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