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1. 发明授权

US5696384A Composition for formation of electrode pattern 失效
标题翻译：用于形成电极图案的组合物
公开(公告)号：US5696384A
公开(公告)日：1997-12-09
申请号：US579413
申请日：1995-12-27
申请人： Katsumi Ogi , Hiroto Uchida , Atsushi Itsuki
发明人： Katsumi Ogi , Hiroto Uchida , Atsushi Itsuki
IPC分类号： C07F15/00 , C23C16/18 , C23C18/08 , H01L21/288 , H01L21/768 , C09K3/00
CPC分类号： C23C18/08 , C07F15/0086 , C23C16/18 , H01L21/288 , H01L21/76838
摘要： A Pt film-forming composition comprises a dimethyl Pt(II) (N,N,N',N'-tetramethylethylenediamine) complex and an organic solvent. A Pt film is formed by applying this composition to a substrate and then subjecting the applied layer of the composition to a heat treatment. A Pt film pattern is obtained by applying this composition to a substrate, pattern-exposing the produced applied layer of the composition to radiation, developing the exposed layer, and then subjecting the developed layer to a heat treatment.
摘要翻译： Pt成膜组合物包含二甲基Pt（II）（N，N，N'，N'-四甲基乙二胺）络合物和有机溶剂。通过将该组合物施加到基材上，然后对组合物的涂布层进行热处理而形成Pt膜。通过将该组合物涂布在基材上，将所得组合物的涂布层图案曝光于放射线，显影曝光层，然后对显影层进行热处理，得到Pt膜图案。

2. 发明授权

US06355097B2 Organic titanium compound suitable for MOCVD 有权
标题翻译：适用于MOCVD的有机钛化合物
公开(公告)号：US06355097B2
公开(公告)日：2002-03-12
申请号：US09855727
申请日：2001-05-16
申请人： Atsushi Itsuki , Taiji Tachibana , Hiroto Uchida , Katsumi Ogi
发明人： Atsushi Itsuki , Taiji Tachibana , Hiroto Uchida , Katsumi Ogi
IPC分类号： C07F728
CPC分类号： C23C16/409 , C07F7/003 , C23C16/18
摘要： Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.
摘要翻译：二（二戊酰甲基）二异丁氧基钛或双（二新戊酰甲烷基） - 二（2,2-二甲基-1-丙氧基钛本身或作为MOCVD工艺中的原料使用，或原样或作为有机溶剂中的溶液，例如，四氢呋喃，产生具有与沉积时间和溶液浓度成比例的膜厚度的精细织构的电介质薄膜。

3. 发明授权

US06280518B1 Organic titanium compound suitable for MOCVD 有权
标题翻译：适用于MOCVD的有机钛化合物
公开(公告)号：US06280518B1
公开(公告)日：2001-08-28
申请号：US09231300
申请日：1999-01-15
申请人： Atsushi Itsuki , Taiji Tachibana , Hiroto Uchida , Katsumi Ogi
发明人： Atsushi Itsuki , Taiji Tachibana , Hiroto Uchida , Katsumi Ogi
IPC分类号： C07F728
CPC分类号： C23C16/409 , C07F7/003 , C23C16/18
摘要： Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.
摘要翻译：双（二戊酰甲基）二异丁氧基钛或二（二戊酰基甲烷基）二（2,2-二甲基-1-丙氧基钛）本身或作为MOCVD工艺中的原料，或原样或作为有机溶剂中的溶液使用，四氢呋喃，产生具有与沉积时间和溶液浓度成比例的膜厚度的精细织构的电介质薄膜。

4. 发明授权

US5767302A High-purity TI complexes, methods for producing the same and BST film-forming liquid compositions 失效
标题翻译：高纯度TI复合物，其制备方法和BST成膜液体组合物
公开(公告)号：US5767302A
公开(公告)日：1998-06-16
申请号：US688774
申请日：1996-07-31
申请人： Katsumi Ogi , Hiroto Uchida , Atsushi Itsuki , Kazuo Wakabayashi
发明人： Katsumi Ogi , Hiroto Uchida , Atsushi Itsuki , Kazuo Wakabayashi
IPC分类号： C07F7/00 , C23C16/40 , H01L21/314 , H01L21/316 , C07F7/28 , C04B35/00 , C04B35/46
CPC分类号： H01L21/31691 , C07F7/006 , C23C16/409
摘要： Two types of high-purity Ti complexes, �TiO(DPM: dipivaloylmethane).sub.2 !.sub.2 and cis-Ti(O-t-Bu).sub.2 (DPM).sub.2, and BST film-forming liquid compositions comprising solutions of either of the two types of high-purity Ti complexes and Ba(DPM).sub.2 and/or Sr(DPM).sub.2 in organic solvents can be used to form BST films. Crystals of the former complex are produced by adding purified water to a solution of TiCl.sub.2 (DPM).sub.2 in an organic solution, adding an alkali chemical to the solution to adjust the pH to 6.0-8.0 to thereby produce turbidity, and separating the organic layer which is then washed with water and heated to reflux. Crystals of the latter complex is produced by adding HDPM to a solution of Ti(O-t-Bu).sub.4 in an organic solvent, and heating the solution to reflux.
摘要翻译：两种类型的高纯Ti配合物[TiO（DPM：二新戊酰甲烷）2] 2和顺式-Ti（Ot-Bu）2（DPM）2和BST成膜液体组合物包含两种高纯Ti配合物和Ba（DPM）2和/或Sr（DPM）2在有机溶剂中可用于形成BST膜。通过将纯化水加入到有机溶液中的TiCl 2（DPM）2的溶液中，向该溶液中加入碱性化学品以将pH调节至6.0-8.0，由此产生浊度并分离出有机层然后将其用水洗涤并加热至回流。通过将HDPM加入到有机溶剂中的Ti（O-t-Bu）4的溶液中并将溶液加热回流来制备后一复合物的晶体。

5. 发明授权

US06485554B1 Solution raw material for forming composite oxide type dielectric thin film and dielectric thin film 有权
标题翻译：用于形成复合氧化物型电介质薄膜和电介质薄膜的溶液原料
公开(公告)号：US06485554B1
公开(公告)日：2002-11-26
申请号：US09184510
申请日：1998-11-02
申请人： Atsushi Itsuki , Taiji Tachibana , Katsumi Ogi
发明人： Atsushi Itsuki , Taiji Tachibana , Katsumi Ogi
IPC分类号： C23C1640
CPC分类号： C23C16/045 , C23C16/409
摘要： The present invention provides a solution suitable for forming a composite oxide type dielectric thin film containing at least one organometallic compound dissolved in at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, and acetoacetic esters, or dissolved in a solvent mixture comprising at least one solvent selected from the group consisting of cyclic and acyclic saturated hydrocarbons, and at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, acetoacetic esters, and unsubstituted or alkyl-substituted pyridine. These solutions can be used in a metal oxide chemical deposition method (a MOCVD method, a chemical vapor deposition method using an organometallic compound) to prepare composite oxide (for example, barium strontium titanate) type dielectric thin films on substrates.
摘要翻译：本发明提供了一种适用于形成复合氧化物型电介质薄膜的溶液，所述复合氧化物型电介质薄膜含有至少一种溶解在选自环状或非环状二醚，烷基取代环状单醚，单 - 或二 - 支链烷基单醚，烷氧基醇，二醇和乙酰乙酸酯，或溶解在包含至少一种选自环状和非环状饱和烃的溶剂的溶剂混合物中，和至少一种选自环状或非环状的溶剂二醚，烷基取代的环状单醚，单或二支链烷基单醚，烷氧基醇，二醇，乙酰乙酸酯和未取代的或烷基取代的吡啶。这些溶液可以用于金属氧化物化学沉积法（MOCVD法，使用有机金属化合物的化学气相沉积法）中以在基底上制备复合氧化物（例如钛酸钡锶）型电介质薄膜。

6. 发明授权

US06310228B1 Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solution 失效
标题翻译：有机铜化合物，含有该化合物的液体混合物，以及使用该溶液制备的铜薄膜
公开(公告)号：US06310228B1
公开(公告)日：2001-10-30
申请号：US09736305
申请日：2000-12-15
申请人： Atsushi Itsuki , Katsumi Ogi
发明人： Atsushi Itsuki , Katsumi Ogi
IPC分类号： C07F724
CPC分类号： C07F7/0896 , C07F7/0803 , C07F7/1804 , Y10T428/31678
摘要： An organic copper compound is provided that is represented by the following formula (1) in which monovalent copper is coordinated with a &bgr;-diketone compound and an unsaturated hydrocarbon compound having a silyloxy group: wherein R Is an unsaturated hydrocarbon moiety, L is the &bgr;-diketone compound, X1, X2, and X3 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms, and X1, X2, and X3 may be the same or different from each other. The organic copper compound is barely decomposed in a stock solution before use, has a prolonged storage life, exhibits a high film deposition rate, can be effectively decomposed on a substrate, is highly volatile, and exhibits high adhesiveness to an underlayer.
摘要翻译：提供由下式（1）表示的有机铜化合物，其中一价铜与β-二酮化合物和具有甲硅烷氧基的不饱和烃化合物配位：其中R是不饱和烃部分，L是β 二酮化合物，X1，X2和X3各自为氢原子，碳原子数1〜5的烷基或碳原子数1〜4的烷氧基，X1，X2，X3可以相同或不同从彼此。有机铜化合物在使用前在储备溶液中几乎不分解，具有延长的储存寿命，显示出高的成膜速率，可以在基材上有效分解，高挥发性，并且对底层粘合性高。

7. 发明申请

US20080072792A1 Raw Material Solution for Metal Organic Chemical Vapor Deposition and Composite Oxide-Based Dielectric Thin Film Produced by Using the Raw Material 审中-公开
标题翻译：用原料生产的金属有机化学气相沉积和复合氧化物基介质薄膜原料溶液
公开(公告)号：US20080072792A1
公开(公告)日：2008-03-27
申请号：US11570120
申请日：2005-06-10
申请人： Akio Yanagisawa , Atsushi Itsuki , Nobuyuki Soyama
发明人： Akio Yanagisawa , Atsushi Itsuki , Nobuyuki Soyama
IPC分类号： C09D199/00
CPC分类号： H01L21/02271 , C23C16/045 , C23C16/409 , H01L21/02197 , H01L21/31691
摘要： A raw material solution for metal organic chemical vapor deposition having good film forming properties and excellent step coverage, and a composite oxide-based dielectric thin film produced by using the raw material, are provided. An improvement is made to the raw material solution for metal organic chemical vapor deposition having one or two or more organometallic compounds dissolved in an organic solvent, and the feature of the constitution lies in that the organic solvent is 1,3-dioxolane, or the organic solvent is a solvent mixture formed by mixing a first solvent consisting of 1,3-dioxolane, and a second solvent comprising one or two or more species selected from the group consisting of alcohols, alkanes, esters, aromatics, alkyl ethers and ketones, which is to be mixed with the 1,3-dioxolane.
摘要翻译：提供了具有良好的成膜性能和优异的台阶覆盖率的金属有机化学气相沉积原料溶液，以及使用该原料生产的复合氧化物类介电薄膜。对具有溶解在有机溶剂中的一种或两种以上有机金属化合物的金属有机化学气相沉积原料溶液进行了改进，其特征在于有机溶剂为1,3-二氧戊环，或有机溶剂是通过混合由1,3-二氧戊环组成的第一溶剂和包含一种或两种以上选自醇，烷烃，酯，芳族化合物，烷基醚和酮的物质的第二溶剂形成的溶剂混合物，其与1,3-二氧戊环混合。

8. 发明申请

US20050065358A1 Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same 失效
标题翻译：用于成膜的含铪材料，其制造方法以及使用其的含铪薄膜的制造方法
公开(公告)号：US20050065358A1
公开(公告)日：2005-03-24
申请号：US10939314
申请日：2004-09-09
申请人： Atsushi Itsuki , Nobuyuki Soyama , Akio Yanagisawa
发明人： Atsushi Itsuki , Nobuyuki Soyama , Akio Yanagisawa
IPC分类号： C23C16/40 , C01G25/00 , C01G27/00 , C01G27/02 , C07F7/00 , H01L21/316 , C07F7/28
CPC分类号： C07F7/003
摘要： A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.
摘要翻译：提供含铪材料用于形成具有优异的蒸发稳定性和较高成膜速率的膜。还提出了一种制备薄膜的方法。用于成膜的含铪材料具有铪原子与氮原子或铪原子和氧原子的键的键。材料中所含的Zr含量等于或小于650ppm。

9. 发明授权

US07196211B2 Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same 失效
标题翻译：用于成膜的含铪材料，其制造方法以及使用其的含铪薄膜的制造方法
公开(公告)号：US07196211B2
公开(公告)日：2007-03-27
申请号：US10939314
申请日：2004-09-09
申请人： Atsushi Itsuki , Nobuyuki Soyama , Akio Yanagisawa
发明人： Atsushi Itsuki , Nobuyuki Soyama , Akio Yanagisawa
IPC分类号： C07F7/00 , C23C16/00
CPC分类号： C07F7/003
摘要： A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.
摘要翻译：提供含铪材料用于形成具有优异的蒸发稳定性和较高成膜速率的膜。还提出了一种制备薄膜的方法。用于成膜的含铪材料具有铪原子与氮原子或铪原子和氧原子的键的键。材料中所含的Zr含量等于或小于650ppm。

10. 发明申请

US20080299312A1 Raw Material Solution for Metal Organic Chemical Vapor Deposition Method and Method for Manufacturing Composite Oxide Film Containing Hf-Si Using the Raw Material Solution 审中-公开
标题翻译：金属有机化学气相沉积方法原料溶液及使用原料溶液制备含Hf-Si复合氧化物膜的方法
公开(公告)号：US20080299312A1
公开(公告)日：2008-12-04
申请号：US11574547
申请日：2005-09-02
申请人： Atsushi Itsuki , Akio Yanagisawa , Nobuyuki Soyama
发明人： Atsushi Itsuki , Akio Yanagisawa , Nobuyuki Soyama
IPC分类号： C23C16/06 , C09D5/00
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/02337 , H01L21/31645
摘要： There is provided a raw material solution for MOCVD method having a high film forming rate, and a method for manufacturing composite oxide film containing Hf-Si using the raw material solution. There is also provided a method for manufacturing composite oxide film containing Hf-Si by using the raw material solution for MOCVD method providing an excellent adhesivity with a substrate.The raw material solution for MOCVD method of the invention includes an organic Si compound represented by the formula (R1R2N)nSiH(4-n) which is mixed in a predetermined ratio. A mixing ratio of the organic Si compound and the organic Hf compound is within the range of 0.001 to 0.5 wt % in a weight ratio (organic Hf compound/organic Si compound). The raw material solution for MOCVD method of the invention is prepared by mixing the compounds in a ratio within the above-mentioned range, dissolving the organic Hf compound in the organic Si compound, and heating this solution at a temperature of 20 to 100 ° C.
摘要翻译：提供了具有高成膜速率的MOCVD法的原料溶液，以及使用原料溶液制造含有Hf-Si的复合氧化物膜的方法。还提供了一种通过使用与基板提供优异的粘附性的用于MOCVD方法的原料溶液来制造包含Hf-Si的复合氧化物膜的方法。本发明的MOCVD法的原料溶液包含以规定比例混合的由式（R1R2N）nSiH（4-n）表示的有机硅化合物。有机Si化合物和有机Hf化合物的混合比例在有机Hf化合物/有机Si化合物的重量比为0.001〜0.5重量％的范围内。本发明的MOCVD法的原料溶液通过以上述范围的比例混合化合物，将有机Hf化合物溶解在有机Si化合物中并在20〜100℃的温度下加热而制备。

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