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    • 1. 发明申请
    • Production of highly conductive graphitic films from polymer films
    • 从聚合物薄膜生产高导电性石墨膜
    • US20160059444A1
    • 2016-03-03
    • US14121387
    • 2014-08-29
    • Yanbo WangBor Z. JangDavid BurtonLucy FuAruna Zhamu
    • Yanbo WangBor Z. JangDavid BurtonLucy FuAruna Zhamu
    • B29C35/02C01B31/04
    • C01B31/04C01B32/20C01P2006/10C01P2006/32C01P2006/40
    • A one-step (direct graphitization) process for producing a graphitic film, comprising directly feeding a precursor polymer film, without going through a carbonization step, to a graphitization zone preset at a graphitization temperature no less than 2,200° C. for a period of residence time sufficient for converting the precursor polymer film to a porous graphitic film having a density from 0.1 g/cm3 to 1.5 g/cm3 and retreating the porous graphitic film from the graphitization zone. Preferably, the precursor polymer film is selected from the group consisting of polyimide, polyamide, phenolic resin, polyoxadiazole, polybenzoxazole, polybenzobisoxazole, polythiazole, polybenzothiazole, polybenzobisthiazole, poly(p-phenylene vinylene), polybenzimidazole, polybenzobisimidazole, polyacrylonitrile, and combinations thereof. Preferably, the precursor polymer film contains an amount of graphene sheets or expanded graphite flakes, preferably from 1% to 90% by weight, sufficient for promoting or accelerating graphitization.
    • 用于生产石墨膜的一步(直接石墨化)方法,包括直接将前体聚合物膜直接进料到不经过碳化步骤的石墨化区域,石墨化区域以石墨化温度不低于2200℃预设一段时间 将前体聚合物膜转化为密度为0.1g / cm 3至1.5g / cm 3的多孔石墨膜,并从石墨化区域中回收多孔石墨膜的足够的停留时间。 优选地,前体聚合物膜选自聚酰亚胺,聚酰胺,酚醛树脂,聚恶二唑,聚苯并恶唑,聚苯并双恶唑,聚噻唑,聚苯并噻唑,聚苯并二噻唑,聚(对亚苯基亚乙烯基),聚苯并咪唑,聚苯并双咪唑,聚丙烯腈及其组合。 优选地,前体聚合物膜含有足以促进或加速石墨化的量的石墨烯片或膨胀石墨片,优选为1重量%至90重量%。