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    • 1. 发明申请
    • Method and apparatus for electroless capping with vapor drying
    • 用蒸气干燥法进行化学镀覆盖的方法和装置
    • US20060003570A1
    • 2006-01-05
    • US11004014
    • 2004-12-02
    • Arulkumar ShanmugasundramRobert TollesRussel Ellwanger
    • Arulkumar ShanmugasundramRobert TollesRussel Ellwanger
    • H01L21/4763H01L21/44
    • H01L21/288H01L21/02068H01L21/02074H01L21/02087H01L21/67034H01L21/67046H01L21/67051H01L21/67161H01L21/76849H01L21/76874
    • Embodiments of the invention relate to a method and apparatus for forming an electroless capping layer over the copper features of a substrate including one or more vapor drying steps. An embodiment of the method includes vapor drying the substrate; optionally applying a dielectric clean solution to the substrate; optionally applying a metal clean solution to the substrate; forming a capping layer by electroless deposition selectively over exposed metal portions of the substrate; and optionally applying a post-deposition clean solution to the substrate structure. In one example, a vapor drying step may be performed prior to forming the capping layer. In another example, the vapor drying step may be performed after forming the capping layer. In another example, a vapor drying step may be performed prior to applying the dielectric clean solution or applying the metal clean solution. In still another example, a vapor drying step may be performed after applying a post-deposition clean solution.
    • 本发明的实施例涉及一种用于在包括一个或多个蒸汽干燥步骤的基底的铜特征上形成无电覆盖层的方法和装置。 该方法的一个实施方案包括蒸发干燥基材; 可选地将电介质清洁溶液施加到基底上; 任选地将金属清洁溶液施加到所述基底上; 通过在基板的暴露的金属部分上选择性地通过无电沉积形成覆盖层; 以及任选地将沉积后清洁溶液施加到所述基底结构。 在一个实例中,蒸汽干燥步骤可以在形成覆盖层之前进行。 在另一个实例中,蒸汽干燥步骤可以在形成覆盖层之后进行。 在另一个实例中,蒸汽干燥步骤可以在施加电介质清洁溶液或施加金属清洁溶液之前进行。 在另一个实例中,可以在施加沉积后的清洁溶液之后进行蒸气干燥步骤。
    • 5. 发明申请
    • Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion
    • 化学机械抛光系统具有多个抛光台并提供相对的线性抛光运动
    • US20050048880A1
    • 2005-03-03
    • US10965202
    • 2004-10-13
    • Robert TollesNorm ShendonSasson SomekhIlya PerlovEugene GantvargHarry Lee
    • Robert TollesNorm ShendonSasson SomekhIlya PerlovEugene GantvargHarry Lee
    • B24B27/00B24B37/04B24B41/00B24B41/06B24B53/007B24B53/12B24B57/02H01L21/00H01L21/306B24B49/00B24B7/00
    • H01L21/67057B08B1/007B24B27/0023B24B37/30B24B37/345B24B41/005B24B53/017B24B57/02H01L21/30625H01L21/67051
    • An apparatus and associated methods for polishing semiconductor wafers and other workpieces that includes polishing surfaces located at multiple polishing stations. Multiple wafer heads, preferably at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a rotatable support, which provides circumferential positioning of the heads relative to the polishing surfaces, and the wafer heads move linearly with respect to the polishing surface, thus providing relative linear motion between the wafer and the polishing station. A load/unload station may be located at a position symmetric with the polishing surfaces. The rotatable support can simultaneously position one of the heads over the load/unload station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers can be performed concurrently with wafer polishing. The multiple polishing stations can be used to sequentially polish a wafer held in a wafer head in a step of multiple steps. The steps may be equivalent, may provide polishes of different finish, or may be directed to polishing different levels. Alternately, more than one wafer may equivalently be polished at multiple polishing stations.
    • 一种用于抛光半导体晶片和其它工件的装置和相关方法,其包括位于多个抛光站处的抛光表面。 多个晶片头,优选地至少比抛光站的数量多一个,可以加载单独的晶片。 晶片头从可旋转的支撑件悬挂,其提供头部相对于抛光表面的周向定位,并且晶片头相对于抛光表面线性移动,从而在晶片和抛光台之间提供相对的线性运动。 装载/卸载站可以位于与抛光表面对称的位置。 可旋转支撑件可以将其中一个头部同时放置在装载/卸载台上,而其余的头部位于用于晶片抛光的抛光站之上,从而可以与晶片抛光同时进行晶片的加载和卸载。 多个抛光站可以用于在多个步骤的步骤中顺序抛光保持在晶片头中的晶片。 这些步骤可以是等效的,可以提供不同涂饰的抛光剂,或者可以指向抛光不同的水平。 或者,可以在多个抛光站等效地抛光多于一个晶片。
    • 7. 发明授权
    • Apparatus for rapid filling of a processing volume
    • 用于快速填充处理量的装置
    • US07950407B2
    • 2011-05-31
    • US11672254
    • 2007-02-07
    • Victor Burton MimkenRobert Tolles
    • Victor Burton MimkenRobert Tolles
    • B67D3/00
    • H01L21/67173H01L21/67057H01L21/67751Y10T137/0396Y10T137/4259
    • A method and apparatus for supplying greater fluid flow and/or fluid volume from a fluid provided from a facility source to a substrate processing chamber is provided. The apparatus couples to an existing facility fluid source and accumulates the fluid, and the flow characteristics of the accumulated fluid are enhanced for delivery to the processing chamber. The apparatus includes a tank in fluid communication with the facility source and one or more processing chambers, and a valve disposed between the tank and the processing chambers adapted to receive a signal from a controller to facilitate filling or draining of the tank. The apparatus and method affects cost of ownership by altering the pressure and/or volume of the existing facility source without the need to alter the facility source.
    • 提供了一种用于从从设备源提供到衬底处理室的流体提供更大的流体流动和/或流体体积的方法和装置。 该装置耦合到现有的设备流体源并且积聚流体,并且增强了累积流体的流动特性以便输送到处理室。 该设备包括与设备源和一个或多个处理室流体连通的罐,以及设置在罐和处理室之间的阀,适于从控制器接收信号以便于罐的填充或排放。 该设备和方法通过改变现有设施来源的压力和/或体积来影响所有权成本,而不需要改变设施来源。