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    • 2. 发明申请
    • DIFFRACTIVE MICROSTRUCTURE AND A METHOD OF PRODUCING THE SAME
    • 衍射微结构及其生产方法
    • US20100327485A1
    • 2010-12-30
    • US12809510
    • 2008-12-17
    • Arto MaaninenPia Qvintus-LeinoSoili Peltonen
    • Arto MaaninenPia Qvintus-LeinoSoili Peltonen
    • B29C59/02B32B3/30B44F1/00B28B11/08
    • Diffractive microstructure comprising micro-protrusions or microgrooves or a combination thereof and method of producing the same. The microstructure is formed in a layer of a thermoplastic carbohydrate polymer or a polymer derived from a carbohydrate material, said polymer having a glass transition point of less than 210° C. The thermoplastic polymer is preferably selected from the group of native starch, dextrin, native hemicellulose, native cellulose, poly(lactic acid), polylactides, polycaprolactone, starch derivatives, dextrin derivatives, hemicellulose derivatives, cellulose derivatives, and mixtures thereof. The invention provides an inexpensive and reliable way of incorporating into the products safety markings, which allow for visual inspection or detection, such as holograms and barcodes.
    • 包含微突起或微槽或其组合的衍射微结构及其制造方法。 微结构形成在热塑性碳水化合物聚合物层或衍生自碳水化合物材料的聚合物中,所述聚合物的玻璃化转变点小于210℃。热塑性聚合物优选选自天然淀粉,糊精, 天然半纤维素,天然纤维素,聚(乳酸),聚丙交酯,聚己内酯,淀粉衍生物,糊精衍生物,半纤维素衍生物,纤维素衍生物及其混合物。 本发明提供了一种便宜且可靠的方式,将产品安全标记整合到允许目视检查或检测的产品中,例如全息图和条形码。
    • 6. 发明申请
    • Methods and compounds for making coatings, waveguides and other optical devices
    • 用于制造涂层,波导和其他光学器件的方法和化合物
    • US20050101792A1
    • 2005-05-12
    • US10862897
    • 2004-06-08
    • Juha RantalaArto MaaninenHiina MaaninenJarkko Pietikainen
    • Juha RantalaArto MaaninenHiina MaaninenJarkko Pietikainen
    • C07F7/08C07F7/12C07F7/18C07F7/04
    • C07F7/123C07F7/0874C07F7/12C07F7/1804C07F7/1888
    • A compound of the general formula R1MR4R5R6 is provided where R1 is a partially or fully fluorinated aryl, alkyl, alkenyl or alkynyl group, wherein M is selected from group 14 of the periodic table, wherein R4, R5 and R6 are independently an alkoxy group OR3 or a halogen group X—except, a) where R4, R5 and R6 are each ethoxy, M is Si and R1 is perfluorinated phenyl or perfluorinated vinyl; b) where R4 is ethoxy, R5 and R6 are chlorine, M is Si, and R1 is perfluorinated phenyl; or c) where R4, R5 and R6 are chlorine, M is Si, and R1 is perfluorinated phenyl, perfluorinated methyl or perfluorinated vinyl. This compound formed can be further reacted to attach an additional organic R group, and/or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components. Methods for making compounds of the general formula R1MR4R5R6 are also disclosed.
    • 提供了通式R 1的化合物,其中R 1,R 2,R 4,R 6, 部分或完全氟化的芳基,烷基,烯基或炔基,其中M选自周期表的第14族,其中R 4,R 5, >和R 6独立地是烷氧基OR 3或卤素基团X,除了a)其中R 4,R 4, 5和R 6各自为乙氧基,M为Si,R 1为全氟化苯基或全氟化乙烯基; b)其中R 4为乙氧基,R 5和R 6为氯,M为Si,R 1为 >是全氟化苯基; 或c)其中R 4,R 5和R 6是氯,M是Si,R 1, 是全氟化苯基,全氟化甲基或全氟乙烯基。 形成的该化合物可以进一步反应以附加另外的有机R基团和/或单独或与一种或多种类似化合物水解形成分子量为500至10,000的材料,该材料可以沉积在各种 衬底作为涂层或沉积和图案化用于波导或其它光学器件部件。 还公开了制备通式为R 1,R 5,R 5,R 6和S 6的化合物的方法。
    • 7. 发明申请
    • Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
    • 聚(有机硅氧烷)材料和用于集成电路应用的混合有机 - 无机电介质的方法
    • US20070077779A1
    • 2007-04-05
    • US11606941
    • 2006-12-01
    • Juha RantalaJason ReidT. Teemu TormanenNungavram ViswanathanArto Maaninen
    • Juha RantalaJason ReidT. Teemu TormanenNungavram ViswanathanArto Maaninen
    • H01L21/31
    • H01L21/3122H01L21/02126H01L21/02216H01L21/02282H01L21/76802H01L21/76808H01L21/7681H01L2221/1031
    • A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.
    • 公开了一种用于制造集成电路的方法,包括在衬底上沉积导电和介电材料的交替区域,其中介电材料的区域通过以下形成:具有完全或部分氟化的第一有机基团的硅烷前体,其包含不饱和碳 碳双键,全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热,电磁辐射或电子束来增加杂化材料的分子量,以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法,其包括:使通式X3MOR3 3的化合物,其中X3是卤素,M是硅,OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基,烯基,芳基和炔基,并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 3 3的化合物; 水解和冷凝R1MOR3 3N,以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。