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1. 发明申请

US20060024018A1 Nanostructure antireflection surfaces 有权
标题翻译：纳米结构抗反射面
公开(公告)号：US20060024018A1
公开(公告)日：2006-02-02
申请号：US10898973
申请日：2004-07-27
申请人： Arthur Piehl , Sriram Ramamoorthi , Daniel Gardner
发明人： Arthur Piehl , Sriram Ramamoorthi , Daniel Gardner
IPC分类号： G02B6/00
CPC分类号： B82Y30/00 , B82Y20/00 , G02B1/11 , G02B1/111 , G02B1/113
摘要： An antireflection surface formed using a plurality of nanostructures of a first material on a surface of a second material. The first material is different from the second material. The distribution of spatial periods of the nanostructures is set by a self-assembly operation. The surface of the second material is converted to operate as a graded index surface that is substantially antireflective for the wavelength of interest.
摘要翻译：使用在第二材料的表面上的第一材料的多个纳米结构形成的抗反射表面。第一种材料与第二种材料不同。纳米结构的空间周期分布由自组装操作设定。第二材料的表面被转换为对于感兴趣的波长基本上是防反射的梯度折射率表面。

2. 发明授权

US07855151B2 Formation of a slot in a silicon substrate 有权
标题翻译：在硅衬底中形成槽
公开(公告)号：US07855151B2
公开(公告)日：2010-12-21
申请号：US11894316
申请日：2007-08-21
申请人： Swaroop K. Kommera , Siddhartha Bhowmik , Richard J. Oram , Sriram Ramamoorthi , David M. Braun
发明人： Swaroop K. Kommera , Siddhartha Bhowmik , Richard J. Oram , Sriram Ramamoorthi , David M. Braun
IPC分类号： H01L21/461
CPC分类号： B81C1/00087 , B41J2/16 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B81B2201/052 , H01L21/76898
摘要： A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.
摘要翻译：形成通过硅衬底的第一侧到达硅衬底的第二侧的槽。沟槽是激光图案。沟槽在硅衬底的第一侧具有口。沟槽没有到达硅衬底的第二面。沟槽被干蚀刻直到沟槽的至少一部分的深度大致延伸到硅衬底（12）的第二侧。执行湿蚀刻以完成槽的形成。湿蚀刻从沟槽的所有表面蚀刻硅。

3. 发明授权

US07851876B2 Micro electro mechanical system 有权
标题翻译：微机电系统
公开(公告)号：US07851876B2
公开(公告)日：2010-12-14
申请号：US11584057
申请日：2006-10-20
申请人： Sriram Ramamoorthi , Donald J. Milligan
发明人： Sriram Ramamoorthi , Donald J. Milligan
IPC分类号： G01L9/00
CPC分类号： B81C1/00253 , B81B2201/0235 , B81B2203/051 , B81B2203/053 , B81C1/00142 , B81C3/004 , B81C2201/019 , B81C2203/058
摘要： Embodiments of a micro electro mechanical system are disclosed.
摘要翻译：公开了一种微机电系统的实施例。

4. 发明申请

US20070095129A1 Cantilevers for sensing fluid properties 失效
标题翻译：用于检测流体特性的悬臂
公开(公告)号：US20070095129A1
公开(公告)日：2007-05-03
申请号：US11264652
申请日：2005-10-31
申请人： Jeremy Donaldson , Manish Giri , Joshua Yu , Sriram Ramamoorthi , Mark Taylor , Mark Johnson
发明人： Jeremy Donaldson , Manish Giri , Joshua Yu , Sriram Ramamoorthi , Mark Taylor , Mark Johnson
IPC分类号： G01N11/00
CPC分类号： G01N11/16 , G01N3/32 , G01N2203/0023 , G01N2203/0286 , G01N2203/0623
摘要： A system for sensing a property of a fluid comprises a fluid channel operable to receive the fluid therein, a flexible arm having a free end positioned within at least a portion of the fluid channel, a fluid actuator disposed sufficiently close to the flexible arm such that actuation of the fluid actuator induces movement of the flexible arm when the fluid is present, and a deflection sensing system operable to quantifiably detect movement of the flexible arm.
摘要翻译：用于感测流体性质的系统包括可操作以在其中接收流体的流体通道，具有定位在流体通道的至少一部分内的自由端的柔性臂，设置成足够靠近柔性臂的流体致动器，使得当存在流体时，流体致动器的致动器引起柔性臂的运动，以及可操作以可量化地检测柔性臂的运动的偏转感测系统。

5. 发明授权

US07158281B2 MEMs device with feedback control 有权
标题翻译：具有反馈控制的MEMs设备
公开(公告)号：US07158281B2
公开(公告)日：2007-01-02
申请号：US11278761
申请日：2006-04-05
申请人： Zhizhang Chen , Hang Liao , Sriram Ramamoorthi , Timothy F. Myers
发明人： Zhizhang Chen , Hang Liao , Sriram Ramamoorthi , Timothy F. Myers
IPC分类号： G02B26/00
CPC分类号： G09G3/3433 , G02B26/001 , G02B26/0833 , G09G3/346 , G09G3/3466 , G09G2300/0819 , G09G2320/029 , G09G2320/0295 , G09G2360/147
摘要： A MEMS device includes at least one movable member and an active device having at least one property affected by the location of the movable member with respect to the active device. A control circuit is used to limit movement of the movable member based on observation of the property affected by the active device.
摘要翻译： MEMS器件包括至少一个可移动部件和有源器件，该器件具有至少一个受可移动元件相对于有源器件的位置影响的特性。控制电路用于基于受到有源器件影响的性能的观察来限制可动部件的移动。

6. 发明申请

US20060194420A1 Multilayer film 有权
标题翻译：多层膜
公开(公告)号：US20060194420A1
公开(公告)日：2006-08-31
申请号：US11068363
申请日：2005-02-28
申请人： Pavel Kornilovich , Peter Mardilovich , Sriram Ramamoorthi
发明人： Pavel Kornilovich , Peter Mardilovich , Sriram Ramamoorthi
IPC分类号： H01L21/20
CPC分类号： C23C14/042 , C23C14/081 , C23C14/165 , H01L21/768 , H01L21/76802 , H01L23/5283 , H01L2924/0002 , H05K3/048 , Y10S148/026 , Y10S977/932 , H01L2924/00
摘要： This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.
摘要翻译：本公开描述了实现多层膜的单个纳米级厚度层的接触的系统和/或方法。

7. 发明授权

US06882100B2 Dielectric light device 有权
公开(公告)号：US06882100B2
公开(公告)日：2005-04-19
申请号：US10337685
申请日：2003-01-06
申请人： Zhizhang Chen , Sriram Ramamoorthi , Terry E McMahon , Timothy F. Myers
发明人： Zhizhang Chen , Sriram Ramamoorthi , Terry E McMahon , Timothy F. Myers
IPC分类号： H01J31/12 , H01J1/312 , H01J9/02 , H01J21/06 , H01L29/02 , H01J1/30
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022
摘要： A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.

8. 发明授权

US06852554B2 Emission layer formed by rapid thermal formation process 有权
标题翻译：通过快速热成型工艺形成的发射层
公开(公告)号：US06852554B2
公开(公告)日：2005-02-08
申请号：US10085866
申请日：2002-02-27
申请人： Zhizhang John Chen , Sriram Ramamoorthi
发明人： Zhizhang John Chen , Sriram Ramamoorthi
IPC分类号： H01J1/312 , H01J9/02 , H01L21/00 , H01L29/06
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/025
摘要： An emitter has a rapid thermal process (RTP) formed emission layer of SiO2, SiOxNy or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.
摘要翻译：发射体具有形成SiO 2，SiO x N y或其组合的快速热处理（RTP）发射层。通过快速热处理形成的发射层不需要电铸来稳定膜。 RTP生长的膜是稳定的并且从器件到器件表现出均匀的特性。

9. 发明授权

US06806488B2 Tunneling emitters and method of making 有权
标题翻译：隧道发射器和制作方法
公开(公告)号：US06806488B2
公开(公告)日：2004-10-19
申请号：US10389556
申请日：2003-03-13
申请人： Sriram Ramamoorthi , Zhizhang Chen
发明人： Sriram Ramamoorthi , Zhizhang Chen
IPC分类号： H01L2906
CPC分类号： B82Y10/00 , G11C11/23 , H01J1/312 , H01J9/025
摘要： An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译：发射体具有形成在电子供给层上的电子供给层和隧道层。可选地，在电子供给层上形成绝缘体层，并且在其内形成有形成有隧道层的开口。在隧道层上形成阴极层。导电层部分地设置在阴极层上，部分地设置在绝缘体层上，如果存在的话。导电层限定一个开口以提供用于电子和/或光子的能量发射的表面。优选但是可选地，对发射极进行退火处理，从而增加从电子供给层向阴极层隧穿的电子的供应。

10. 发明申请

US20090126977A1 MULTILAYER FILM 有权
标题翻译：多层膜
公开(公告)号：US20090126977A1
公开(公告)日：2009-05-21
申请号：US12104252
申请日：2008-04-16
申请人： Paval Kornilovich , Peter Mardilovich , Sriram Ramamoorthi
发明人： Paval Kornilovich , Peter Mardilovich , Sriram Ramamoorthi
IPC分类号： H05K1/09
CPC分类号： C23C14/042 , C23C14/081 , C23C14/165 , H01L21/768 , H01L21/76802 , H01L23/5283 , H01L2924/0002 , H05K3/048 , Y10S148/026 , Y10S977/932 , H01L2924/00
摘要： This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.
摘要翻译：本公开描述了实现多层膜的单个纳米级厚度层的接触的系统和/或方法。

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