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1. 发明授权

US4767826A Radiation-sensitive polymers 失效
标题翻译：辐射敏感聚合物
公开(公告)号：US4767826A
公开(公告)日：1988-08-30
申请号：US756354
申请日：1985-07-18
申请人： Rong-Chang Liang , Subhash Narang , Arnost Reiser
发明人： Rong-Chang Liang , Subhash Narang , Arnost Reiser
IPC分类号： C08G18/00 , C08G18/61 , C08G18/67 , C08G18/69 , C08G63/00 , C08G63/91 , C08G69/00 , C08G69/48 , C08G81/00 , G03F7/038 , G03F7/075
CPC分类号： G03F7/0757 , C08G18/61 , C08G18/679 , C08G18/69 , G03F7/038 , G03F7/0384
摘要： This invention relates to the preparation of solvent soluble polymeric materials which become insoluble in solvents after exposure to actinic light, x-rays or electron beams.The polymers are linear block copolymers comprising two segments; a soft segment which forms a continuous phase, and a rigid, crystallizable photoreactive segment which forms a dispersed phase. The rigid segments are chosen from polyurethanes, polyesters, polyamides, and polyureas which contain a diacetylene group in their repeat units. The soft segments are low molecular weight rubbery polymers selected from groups such as polyethers, polyesters, polydienes, and polysiloxanes.The polymers produced are useful in a wide variety of applications in the field of coatings and graphic arts. More particularly, this invention relates to negative photoresists which are remarkable by their (1) high photosensitivity (2) great latitude in tailoring of film properties, (3) high thermal stability and (4) oxygen insensitivity.
摘要翻译：本发明涉及在曝光于光化学光，X射线或电子束之后变得不溶于溶剂的溶剂可溶性聚合材料的制备。聚合物是包含两个链段的线性嵌段共聚物; 形成连续相的软链段和形成分散相的刚性可结晶的光反应性链段。刚性区段选自聚氨酯，聚酯，聚酰胺和聚脲，它们在其重复单元中含有二乙炔基。软链段是选自聚醚，聚酯，聚二烯和聚硅氧烷的低分子量橡胶状聚合物。所生产的聚合物可用于涂料和印刷领域的各种应用。更具体地说，本发明涉及负光致抗蚀剂，它们通过（1）高光敏性（2）在调整膜性能方面具有很大的自由度，（3）高热稳定性和（4）氧不敏感性而显着。

2. 发明授权

US06319648B1 Dissolution inhibition resists for microlithography 失效
标题翻译：溶解抑制抵抗微光刻
公开(公告)号：US06319648B1
公开(公告)日：2001-11-20
申请号：US09462963
申请日：2000-01-14
申请人： Arnost Reiser
发明人： Arnost Reiser
IPC分类号： G03F7023
CPC分类号： G03F7/0045 , G03F7/0233 , G03F7/0236 , G03F7/039 , Y10S430/106
摘要： Improved dissolution inhibition resists for use in microlithography are disclosed herein. These resists are comprised of phenolic base resin(s) having increased inhibitability and which are suitable for use in resist formulations for microlithography and semiconductor applications.
摘要翻译：本文公开了用于微光刻的改进的溶解抑制抗蚀剂。这些抗蚀剂由具有增加的抑制性的酚基树脂组成，并且适用于微光刻和半导体应用的抗蚀剂制剂。

3. 发明授权

US5347040A Sensitized onium salts 失效
标题翻译：敏化鎓盐
公开(公告)号：US5347040A
公开(公告)日：1994-09-13
申请号：US988435
申请日：1992-12-09
申请人： Arnost Reiser , Xiaohua He
发明人： Arnost Reiser , Xiaohua He
IPC分类号： C07C25/02 , C07C309/43 , C07C381/12 , C07F9/54 , C08F2/50 , C08G59/68 , C08G65/10 , C09K3/00 , G03F7/029 , C07C69/017 , C07C301/00 , C07C301/02 , C07F9/40
CPC分类号： C07C309/43 , C07C381/12 , C08F2/50 , C08G59/68 , C08G65/105 , Y10S430/115 , Y10S430/127
摘要： Onium salt capable of generating acid upon exposure to actinic radiation having the following structure:(R.sub.1).sub.a (R.sub.2).sub.b (R.sub.3).sub.c Q.sup.+ --A--M.sup.+ X.sup.- --B--X'.sup.-where:Q is S;R.sub.1, R.sub.2 and R.sub.3 are independently substituted or unsubstituted aromatic, aliphatic, or aralkyl groups having 7-18 carbon atoms;M.sup.+ is a cationic organic radical;A is a divalent radical selected from the group of hindered alkylene groups, substituted or unsubstituted aromatic or aralkyl groups;B is a divalent aromatic sensitizer which absorbs radiation having a wavelength longer than 300 nm and is capable of transferring an electron to Q,x.sup.- and X'.sup.- are anionic groups; and wherein A provides a spatial separation between Q and M, and B provides a spatial separation between X and X', such that the spatial separation provided by A between Q and M is substantially the same as the spatial separation provided by B between X and X'.
摘要翻译：（R1）a（R2）b（R3）cQ + -A-M + X-B-X'-其中：Q为S; R1，R2和R3独立地为具有7-18个碳原子的取代或未取代的芳族，脂族或芳烷基; M +是阳离子有机基团; A是选自受阻亚烷基，取代或未取代的芳族或芳烷基的二价基团; B是吸收波长大于300nm并且能够将电子传递到Q的辐射的二价芳香族敏化剂，X和X'是阴离子基团; 并且其中A提供Q和M之间的空间间隔，并且B提供X和X'之间的空间间隔，使得由Q和M之间的A提供的空间分隔基本上与由X和X之间的B提供的空间分离相同 X'。

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