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1. 发明授权

US5856906A Backside gas quick dump apparatus for a semiconductor wafer processing system 失效
标题翻译：用于半导体晶片处理系统的背面气体快速倾倒装置
公开(公告)号：US5856906A
公开(公告)日：1999-01-05
申请号：US854509
申请日：1997-05-12
申请人： Arnold Kholodenko , Maya Shendon , Gary Hsueh , James E. Sammons, III
发明人： Arnold Kholodenko , Maya Shendon , Gary Hsueh , James E. Sammons, III
IPC分类号： H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H01L21/67109 , H01L21/6831 , H02N13/00 , Y10T279/23
摘要： Apparatus for retaining a workpiece in a semiconductor wafer processing system. The apparatus has a collector positioned between an electrostatic chuck pedestal and the floor of the processing chamber. The collector has inlet and exhaust control valves connected to inlet and exhaust ports for providing and expelling a backside heat transfer gas (e.g., Helium). Heat transfer exhaust cavities in the collector are connected to the exhaust port to rapidly draw the gas off the backside of the wafer. Additionally, control of the heat transfer gas layer uniformity during processing is achieved by opening and closing the valves to the inlet and exhaust ports as required.
摘要翻译：用于将工件保持在半导体晶片处理系统中的装置。该设备具有位于静电吸盘基座和处理室底板之间的收集器。收集器具有连接到入口和排气口的入口和排气控制阀，用于提供和排出背面传热气体（例如氦气）。收集器中的传热排气腔连接到排气口，以将气体从晶片的背面快速吸出。此外，通过根据需要打开和关闭入口和排气口的阀门来实现加工过程中传热气体层的均匀性的控制。

2. 发明授权

US08769691B1 Network traffic reduction 有权
标题翻译：网络流量减少
公开(公告)号：US08769691B1
公开(公告)日：2014-07-01
申请号：US13027178
申请日：2011-02-14
申请人： Gary Hsueh , Jeff Kuo , Sam Chang , Shako Ho , Norman Wang
发明人： Gary Hsueh , Jeff Kuo , Sam Chang , Shako Ho , Norman Wang
IPC分类号： G06F7/04 , G08B23/00
CPC分类号： H04L63/1441
摘要： A server access log includes data records each describing a previous query regarding a suspect computer file of a client computer. Each record includes the CRC code for the suspect computer file, the result of the malware analysis performed on the backend server and other attributes and values. The log is analyzed to retrieve relevant attributes and values from each record. Key attributes and values are generated such as region and continuous query. All CRC codes are grouped according to attribute values. Each group is analyzed to determine the network traffic associated with downloading the entire group to all user computers and the network traffic associated with not downloading the group but responding to future malware queries regarding CRC codes in the group. CRC codes are removed from each group if necessary. CRC code-result pairs for each group are downloaded to all user computers as a pre-fetch cache.
摘要翻译：服务器访问日志包括每个描述关于客户端计算机的可疑计算机文件的先前查询的数据记录。每个记录包括可疑计算机文件的CRC代码，对后端服务器执行的恶意软件分析的结果以及其他属性和值。分析日志以从每个记录检索相关属性和值。生成关键属性和值，如区域和连续查询。所有CRC码根据属性值分组。对每个组进行分析，以确定与将整个组下载到所有用户计算机相关联的网络流量以及与未下载组相关的网络流量，但是响应未来关于组中CRC码的恶意软件查询。如果需要，可以从每个组中删除CRC代码。每个组的CRC码 - 结果对作为预取缓存下载到所有用户计算机。

3. 发明授权

US07265382B2 Method and apparatus employing integrated metrology for improved dielectric etch efficiency 失效
标题翻译：采用集成计量学方法和设备，提高介电蚀刻效率
公开(公告)号：US07265382B2
公开(公告)日：2007-09-04
申请号：US10293595
申请日：2002-11-12
申请人： Dimitris Lymberopoulos , Gary Hsueh , Sukesh Mohan
发明人： Dimitris Lymberopoulos , Gary Hsueh , Sukesh Mohan
IPC分类号： H01L23/58 , H01L21/66 , G01N23/00
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for processing a semiconductor wafer is provided for reducing dimensional variation by feeding forward information relating to photoresist mask CD and profile and underlying layer thickness measured at several points on the wafer to adjust the next process the inspected wafer will undergo (e.g., the etch process). After the processing step, dimensions of a structure formed by the process, such as the CD and depth of a trench formed by the process, are measured at several points on the wafer, and this information is fed back to the process tool to adjust the process for the next wafer to further reduce dimensional variation. In certain embodiments, the CD, profile, thickness and depth measurements, etch processing and post-etch cleaning are performed at a single module in a controlled environment. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps.
摘要翻译：提供了一种用于处理半导体晶片的方法和装置，用于通过馈送与光致抗蚀剂掩模CD相关的前向信息以及在晶片上的几个点处测量的轮廓和下层厚度来减小尺寸变化，以调整被检查的晶片将经历的下一个处理（例如，蚀刻工艺）。在处理步骤之后，在晶片的几个点处测量由该工艺形成的结构的尺寸，例如CD和由该工艺形成的沟槽的深度，并将该信息反馈到处理工具以调整处理下一个晶片以进一步减小尺寸变化。在某些实施例中，在受控环境中的单个模块上执行CD，轮廓，厚度和深度测量，蚀刻处理和蚀刻后清洁。模块执行的所有转移和处理步骤都在干净的环境中进行，从而通过避免将晶片暴露在大气中并在步骤之间可能的污染来提高产量。

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