专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US12136536B2 Electrostatic chuck with multiple radio frequency meshes to control plasma uniformity 有权
公开(公告)号：US12136536B2
公开(公告)日：2024-11-05
申请号：US16970110
申请日：2019-02-28
申请人： Applied Materials, Inc.
发明人： Edward P. Hammond, IV , Jonghoon Baek
IPC分类号： H01J37/32 , C23C16/458 , C23C16/509 , H01L21/683 , H01L21/67
CPC分类号： H01J37/32174 , C23C16/4587 , C23C16/509 , H01J37/32568 , H01J37/32715 , H01L21/6833 , H01J2237/2007 , H01J2237/3321 , H01J2237/334 , H01L21/67069
摘要： The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

2. 发明授权

US10504697B2 Particle generation suppresor by DC bias modulation 有权
公开(公告)号：US10504697B2
公开(公告)日：2019-12-10
申请号：US15424355
申请日：2017-02-03
申请人： Applied Materials, Inc.
发明人： Jonghoon Baek , Soonam Park , Xinglong Chen , Dmitry Lubomirsky
IPC分类号： C23C16/44 , H01J37/32 , C23C16/503 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32082 , C23C16/4401 , C23C16/4404 , C23C16/503 , C23C16/509 , C23C16/52 , H01J37/3255 , H01J37/32091 , H01J37/32146 , H01J37/32532 , H01J37/32568 , H01J37/32697 , H01J2237/334
摘要： Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.

3. 发明申请

US20140141621A1 DRY-ETCH SELECTIVITY 有权
标题翻译：干燥选择性
公开(公告)号：US20140141621A1
公开(公告)日：2014-05-22
申请号：US13834206
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： He Ren , Jang-Gyoo Yang , Jonghoon Baek , Anchuan Wang , Soonam Park , Saurabh Garg , Xinglong Chen , Nitin K. Ingle
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.
摘要翻译：描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。等离子体功率是脉冲的，而不是连续地保持。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

4. 发明申请

US20140057447A1 SEMICONDUCTOR PROCESSING WITH DC ASSISTED RF POWER FOR IMPROVED CONTROL 有权
标题翻译：直流辅助RF功率的半导体处理改进控制
公开(公告)号：US20140057447A1
公开(公告)日：2014-02-27
申请号：US13829669
申请日：2013-03-14
申请人： Applied Materials, Inc.
发明人： Jang-Gyoo Yang , Xinglong Chen , Soonam Park , Jonghoon Baek , Saurabh Garg , Shankar Venkataraman
IPC分类号： H01L21/3065 , H01L21/67
CPC分类号： H01J37/32091 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J37/32146 , H01J37/32422 , H01J37/3244 , H01J37/32568 , H01J2237/332 , H01J2237/334 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069 , H01L21/67075
摘要： Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.
摘要翻译：描述了包括处理室的半导体处理系统。处理室可以包括盖组件，栅格电极，导电插入件和接地电极。每个部件可以与可操作以在处理室内产生等离子体的一个或多个电源耦合。每个部件可以通过定位多个绝缘部件而被电隔离。一个或多个电源可以利用开关机构与处理室电耦合。开关可以切换以将一个或多个电源电耦合到处理室的组件。

5. 发明授权

US09827578B2 Tightly fitted ceramic insulator on large area electrode 有权
公开(公告)号：US09827578B2
公开(公告)日：2017-11-28
申请号：US14726067
申请日：2015-05-29
申请人： Applied Materials, Inc.
发明人： Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
IPC分类号： B05B1/18 , H01J37/32 , C23C16/509 , C23C16/455
CPC分类号： B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

6. 发明授权

US09373517B2 Semiconductor processing with DC assisted RF power for improved control 有权
标题翻译：具有DC辅助RF功率的半导体处理，以改善控制
公开(公告)号：US09373517B2
公开(公告)日：2016-06-21
申请号：US13829669
申请日：2013-03-14
申请人： Applied Materials, Inc.
发明人： Jang-Gyoo Yang , Xinglong Chen , Soonam Park , Jonghoon Baek , Saurabh Garg , Shankar Venkataraman
IPC分类号： H01L21/3065 , H01L21/67 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32 , H01L21/3213
CPC分类号： H01J37/32091 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J37/32146 , H01J37/32422 , H01J37/3244 , H01J37/32568 , H01J2237/332 , H01J2237/334 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069 , H01L21/67075
摘要： Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.
摘要翻译：描述了包括处理室的半导体处理系统。处理室可以包括盖组件，栅格电极，导电插入件和接地电极。每个部件可以与可操作以在处理室内产生等离子体的一个或多个电源耦合。每个部件可以通过定位多个绝缘部件而被电隔离。一个或多个电源可以利用开关机构与处理室电耦合。开关可以切换以将一个或多个电源电耦合到处理室的组件。

7. 发明申请

US20150132968A1 DRY-ETCH SELECTIVITY 审中-公开
标题翻译：干燥选择性
公开(公告)号：US20150132968A1
公开(公告)日：2015-05-14
申请号：US14602835
申请日：2015-01-22
申请人： Applied Materials, Inc.
发明人： He Ren , Jang-Gyoo Yang , Jonghoon Baek , Anchuan Wang , Soonam Park , Saurabh Garg , Xinglong Chen , Nitin K. Ingle
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.
摘要翻译：描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。等离子体功率是脉冲的，而不是连续地保持。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

8. 发明授权

US11908662B2 Device and method for tuning plasma distribution using phase control 有权
公开(公告)号：US11908662B2
公开(公告)日：2024-02-20
申请号：US16663215
申请日：2019-10-24
申请人： Applied Materials, Inc.
发明人： Xiaopu Li , Kallol Bera , Edward P. Hammond, IV , Jonghoon Baek , Amit Kumar Bansal , Jun Ma , Satoru Kobayashi
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , C23C16/505
CPC分类号： H01J37/32467 , C23C16/505 , H01J37/32091 , H01J37/32174 , H01J37/32715 , H01J2237/24564 , H01J2237/3321
摘要： Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

9. 发明授权

US11339475B2 Film stack overlay improvement 有权
公开(公告)号：US11339475B2
公开(公告)日：2022-05-24
申请号：US16678996
申请日：2019-11-08
申请人： Applied Materials, Inc.
发明人： Xinhai Han , Deenesh Padhi , Daemian Raj Benjamin Raj , Kristopher Enslow , Wenjiao Wang , Masaki Ogata , Sai Susmita Addepalli , Nikhil Sudhindrarao Jorapur , Gregory Eugene Chichkanoff , Shailendra Srivastava , Jonghoon Baek , Zakaria Ibrahimi , Juan Carlos Rocha-Alvarez , Tza-Jing Gung
IPC分类号： C23C16/505 , C23C16/455 , H01L27/11524 , H01L27/1157 , H01L27/11578 , H01L27/11551 , C23C16/34 , H01J37/32 , C23C16/40
摘要： An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

10. 发明授权

US10032606B2 Semiconductor processing with DC assisted RF power for improved control 有权
公开(公告)号：US10032606B2
公开(公告)日：2018-07-24
申请号：US15187211
申请日：2016-06-20
申请人： Applied Materials, Inc.
发明人： Jang-Gyoo Yang , Xinglong Chen , Soonam Park , Jonghoon Baek , Saurabh Garg , Shankar Venkataraman
IPC分类号： C23C16/503 , H01J37/32 , H01L21/3065 , H01L21/67 , C23C16/50 , C23C16/505 , C23C16/509 , H01L21/3213 , H01L21/02 , H01L21/285 , H01L21/311
CPC分类号： H01J37/32091 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J37/32146 , H01J37/32422 , H01J37/3244 , H01J37/32568 , H01J2237/332 , H01J2237/334 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069 , H01L21/67075
摘要： Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式