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    • 1. 发明申请
    • Variable efficiency faraday shield
    • 可变效率法拉第盾
    • US20020129903A1
    • 2002-09-19
    • US09808649
    • 2001-03-14
    • Applied Materials, Inc.
    • Matthew F. DavisFrank Hooshdaran
    • C23F001/00C23C016/00
    • H01J37/32174H01J37/32082H01J37/321
    • A Faraday shield for use with a plasma reactor has a variable shielding efficiency. The shield is divided into numerous shield segments that may each be selectively grounded or ungrounded. The rate of transition between fully ungrounded and fully grounded states is controllable so as to maintain stable plasma conditions in the plasma reactor during the transitional period. The time rate of change of the shielding efficiency can be controlled at a predetermined rate once plasma strike is achieved, or can be made conditional to successful matching at the previous shield setting. When the Faraday shield is fully grounded, the amount of on-wafer and on-chamber contamination is reduced by reducing the rate of sputtering of chamber surfaces.
    • 与等离子体反应器一起使用的法拉第屏蔽具有可变的屏蔽效率。 屏蔽分为多个屏蔽段,每个屏蔽段可以选择性地接地或不接地。 在完全不接地和完全接地状态之间的转换速率是可控的,以便在过渡期间保持等离子体反应器中稳定的等离子体条件。 一旦实现等离子体击打,屏蔽效率的时间变化率可以以预定的速率被控制,或者可以在先前的屏蔽设置下成功地进行匹配。 当法拉第屏蔽完全接地时,通过降低腔表面的溅射速率来降低片上和室内污染的量。