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1. 发明授权

US11237485B2 System, software application, and method for lithography stitching 有权
公开(公告)号：US11237485B2
公开(公告)日：2022-02-01
申请号：US16748202
申请日：2020-01-21
申请人： Applied Materials, Inc.
发明人： Yongan Xu , Christopher Dennis Bencher , Robert Jan Visser , Ludovic Godet
IPC分类号： G03F7/20 , G03F7/00
摘要： Embodiments of the present disclosure relate to methods for positioning masks in a propagation direction of a light source. The masks correspond to a pattern to be written into a photoresist layer of a substrate. The masks are positioned by stitching a first mask and a second mask. The first mask includes a set of first features having first feature extensions extending therefrom at first feature interfaces. The second mask includes a set of second features having second feature extensions extending therefrom at second feature interfaces. Each first feature extension stitches with each corresponding second feature extension to form each stitched portion of a first stitched portion of the first pair of masks. The stitched portion of the first pair of masks defines a portion of the pattern to be written into the photoresist layer.

2. 发明授权

US11187836B2 Method of building a 3D functional optical material layer stacking structure 有权
公开(公告)号：US11187836B2
公开(公告)日：2021-11-30
申请号：US16293354
申请日：2019-03-05
申请人： Applied Materials, Inc.
发明人： Michael Yu-tak Young , Ludovic Godet , Robert Jan Visser , Naamah Argaman , Christopher Dennis Bencher , Wayne McMillan
IPC分类号： G02B26/08 , G02B5/18 , G02B30/26 , G03F7/00
摘要： Embodiments herein describe a sub-micron 3D diffractive optics element and a method for forming the sub-micron 3D diffractive optics element. In a first embodiment, a method is provided for forming a sub-micron 3D diffractive optics element on a substrate without planarization. The method includes depositing a material stack to be patterned on a substrate, depositing and patterning a thick mask material on a portion of the material stack, etching the material stack down one level, trimming a side portion of the thick mask material, etching the material stack down one more level, repeating trim and etch steps above ‘n’ times, and stripping the thick mask material from the material stack.

3. 发明授权

US10571809B1 Half tone scheme for maskless lithography 有权
公开(公告)号：US10571809B1
公开(公告)日：2020-02-25
申请号：US16279875
申请日：2019-02-19
申请人： Applied Materials, Inc.
发明人： Christopher Dennis Bencher , Joseph R. Johnson , Thomas L. Laidig
IPC分类号： G03F7/20 , G03F7/09
摘要： Embodiments described herein provide a system, a software application, and a method of a lithography process, to write full tone portions and grey tone portions in a single pass. One embodiment of the system includes a controller configured to provide mask pattern data to a lithography system. The controller is configured to divide a plurality of spatial light modulator pixels temporally by grey tone shots and full tone shots of a multiplicity of shots, and the controller is configured to vary a second intensity of a light beam generated by a light source and vary a first intensity of the light beam generated by the light source of each image projection system at the full tone shots.

4. 发明授权

US10289003B2 Line edge roughness reduction via step size alteration 有权
公开(公告)号：US10289003B2
公开(公告)日：2019-05-14
申请号：US15253379
申请日：2016-08-31
申请人： Applied Materials, Inc.
发明人： Thomas L. Laidig , Joseph R. Johnson , Christopher Dennis Bencher
IPC分类号： G03F7/20
摘要： An image correction application relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed. The embodiments described herein relate to a software application platform, which corrects non-uniform image patterns on a substrate. The application platform method includes in a digital micromirror device (DMD) installed in an image projection system, the DMD having a plurality of columns, each column having a plurality of mirrors, disabling at least one entire column of the plurality of columns, exposing a first portion of the substrate to a first shot of electromagnetic radiation, exposing a second portion of the substrate to a second shot of electromagnetic radiation, and iteratively translating the substrate a step size and exposing another portion of the substrate to another shot of electromagnetic radiation until the substrate has been completely exposed to shots of electromagnetic radiation.

5. 发明授权

US10014174B2 Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning 有权
公开(公告)号：US10014174B2
公开(公告)日：2018-07-03
申请号：US15602862
申请日：2017-05-23
申请人： Applied Materials, Inc.
发明人： Bencherki Mebarki , Pramit Manna , Li Yan Miao , Deenesh Padhi , Bok Hoen Kim , Christopher Dennis Bencher
IPC分类号： H01L21/033 , H01L21/02 , H01L21/311 , H01L21/3105 , H01L21/027
CPC分类号： H01L21/0337 , H01L21/02115 , H01L21/02118 , H01L21/02266 , H01L21/02274 , H01L21/0273 , H01L21/31058 , H01L21/31138 , H01L2221/00
摘要： Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

6. 发明授权

US09383649B2 Digital grey tone lithography for 3D pattern formation 有权
标题翻译：用于3D图案形成的数字灰度光刻
公开(公告)号：US09383649B2
公开(公告)日：2016-07-05
申请号：US14802906
申请日：2015-07-17
申请人： Applied Materials, Inc.
发明人： Christopher Dennis Bencher
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/203 , G03F7/0037
摘要： A method of processing a substrate is described herein. The method includes positioning a substrate on a stage associated with a maskless direct writing pattern generator. The substrate has an undeveloped, unexposed photoresist layer formed thereon. The photoresist layer has a plurality of writing pixel locations. The method includes delivering predetermined doses of electromagnetic energy from the pattern generator to each writing pixel location. A first predetermined dose is a full tone dose, and the first predetermined dose is delivered to at least one writing pixel location. A second predetermined is a fractional tone dose, and the second predetermined dose is delivered to at least one writing pixel location. A third predetermined dose is either a fractional dose or a zero tone dose. The third predetermined dose is delivered to at least one writing pixel location, and the third predetermined dose is different from the second predetermined dose.
摘要翻译：本文描述了处理衬底的方法。该方法包括将衬底定位在与无掩模直接写入图案发生器相关联的台上。衬底具有形成在其上的未显影未曝光光致抗蚀剂层。光致抗蚀剂层具有多个写入像素位置。该方法包括将预定剂量的电磁能量从图案发生器传送到每个写入像素位置。第一预定剂量是全音调剂量，并且第一预定剂量被递送至至少一个写入像素位置。第二预定是分数色调剂量，并且第二预定剂量被递送到至少一个写入像素位置。第三预定剂量是分数剂量或零音量。第三预定剂量被递送到至少一个写入像素位置，并且第三预定剂量不同于第二预定剂量。

7. 发明授权

US09337051B2 Method for critical dimension reduction using conformal carbon films 有权
标题翻译：使用保形碳膜进行临界尺寸降低的方法
公开(公告)号：US09337051B2
公开(公告)日：2016-05-10
申请号：US14799374
申请日：2015-07-14
申请人： Applied Materials, Inc.
发明人： Bencherki Mebarki , Bok Hoen Kim , Deenesh Padhi , Li Yan Miao , Pramit Manna , Christopher Dennis Bencher , Mehul B. Naik , Huixiong Dai , Christopher S. Ngai , Daniel Lee Diehl
IPC分类号： H01L21/00 , H01L21/308 , H01L21/311 , H01L21/02 , H01L21/027
CPC分类号： H01L21/3088 , H01L21/02115 , H01L21/02266 , H01L21/02274 , H01L21/0276 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/31111 , H01L21/31144
摘要： Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.
摘要翻译：本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除保形碳层，光致抗蚀剂等碳质成分。因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。

8. 发明授权

US09177796B2 Optically tuned hardmask for multi-patterning applications 有权
标题翻译：用于多图案化应用的光学调谐硬掩模
公开(公告)号：US09177796B2
公开(公告)日：2015-11-03
申请号：US14269010
申请日：2014-05-02
申请人： Applied Materials, Inc.
发明人： Christopher Dennis Bencher , Daniel Lee Diehl , Huixiong Dai , Yong Cao , Tingjun Xu , Weimin Zeng , Peng Xie
IPC分类号： H01L21/311 , H01L21/033 , H01L21/02 , H01L21/027 , H01L21/3105 , C23C14/00 , C23C14/06
CPC分类号： H01L21/0337 , C23C14/0042 , C23C14/06 , C23C14/14 , C23C14/351 , H01L21/02126 , H01L21/0214 , H01L21/02266 , H01L21/0276 , H01L21/0332 , H01L21/3081 , H01L21/3086 , H01L21/3105 , H01L21/31138 , H01L21/31144
摘要： The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.
摘要翻译：本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。因此使相对于光致抗蚀剂光学平坦化的硬掩模。这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

9. 发明授权

US11994804B2 Lithography apparatus, patterning system, and method of patterning a layered structure 有权
公开(公告)号：US11994804B2
公开(公告)日：2024-05-28
申请号：US17755276
申请日：2020-11-18
申请人： Applied Materials, Inc.
发明人： Christopher Dennis Bencher
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/70208 , G03F7/70275 , G03F7/70316 , G03F7/70575
摘要： Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

10. 发明授权

US11592740B2 Wire grid polarizer manufacturing methods using frequency doubling interference lithography 有权
公开(公告)号：US11592740B2
公开(公告)日：2023-02-28
申请号：US15961601
申请日：2018-04-24
申请人： Applied Materials, Inc.
发明人： Jang Fung Chen , Christopher Dennis Bencher , David Markle
IPC分类号： G03F7/00 , G02F1/1335 , G02B5/30 , G03F7/20
摘要： The present disclosure generally relates to methods and systems for manufacturing wire grid polarizers (WGP) using Markle-Dyson exposure systems and dual tone development (DTD) frequency doubling. In one embodiment, the method includes depositing a photoresist layer over an aluminum-coated display substrate, patterning the photoresist layer by dual tone development using a Markle-Dyson system to form a photoresist pattern, and transferring the photoresist pattern into the aluminum-coated display substrate to manufacture a WGP having finer pitch, for example less than or equal to about 100 nm, and increased frequency.

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