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1. 发明申请

WO2004048636A2 METHOD OF CLEANING A COATED PROCESS CHAMBER COMPONENT 审中-公开
标题翻译：清洁涂层过程室组件的方法
公开(公告)号：WO2004048636A2
公开(公告)日：2004-06-10
申请号：PCT/US2003/036376
申请日：2003-11-12
申请人： APPLIED MATERIALS, INC.
发明人： WANG, Hong , HE, Yongxiang , STOW, Clifford, C.
IPC分类号： C23C14/56
CPC分类号： C23G1/125 , B24C1/06 , C22B7/007 , C23C14/564 , C23F1/36 , Y02P10/234 , Y10S134/902
摘要： In a method of cleaning and refurbishing a process chamber component having a metal coating having a surface thereon, the surface of the metal coating is immersed in an acidic solution to remove at least a portion of the process deposits from the surface. Thereafter, the surface of the metal coating is immersed in a basic solution to remove substantially all the metal coating. The component may optionally be bead blasting to roughen a surface of the component, and the metal coating may be reformed.
摘要翻译：在清洁和翻新具有其上具有表面的金属涂层的处理室部件的方法中，将金属涂层的表面浸入酸性溶液中以从表面除去至少一部分工艺沉积物。此后，将金属涂层的表面浸入碱性溶液中以除去基本上所有的金属涂层。组分可以任选地是珠粒喷涂以使组分的表面粗糙化，并且金属涂层可以被重整。

2. 发明申请

WO2003073478A3 PLASMA-RESISTANT, WELDED ALUMINUM STRUCTURES FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
公开(公告)号：WO2003073478A3
公开(公告)日：2003-09-04
申请号：PCT/US2003/004801
申请日：2003-02-13
申请人： APPLIED MATERIALS, INC.
发明人： THACH, Senh , SUN, Jennifer, Y. , WU, Shun, Jackson , LIN, Yixing , STOW, Clifford, C.
IPC分类号： B23K20/12
摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.

3. 发明公开

EP1458657A1 METHODS OF ROUGHENING A CERAMIC SURFACE 审中-公开
标题翻译：粗糙陶瓷表面的方法
公开(公告)号：EP1458657A1
公开(公告)日：2004-09-22
申请号：EP02806125.7
申请日：2002-11-20
申请人： Applied Materials, Inc.
发明人： WELDON, Edwin, Charles , HE, Yongxiang , WANG, Hong , STOW, Clifford, C.
IPC分类号： C04B41/91 , C04B41/88 , C04B41/90 , B23K26/40 , C23C14/50 , H01L21/00
CPC分类号： C04B41/009 , B23K26/40 , B23K2203/52 , C04B41/0072 , C04B41/51 , C04B41/5155 , C04B41/52 , C04B41/5353 , C04B41/80 , C04B41/88 , C04B41/89 , C04B41/91 , C23C14/564 , C04B41/53 , C04B41/5133 , C04B35/10 , C04B35/00
摘要： Disclosed herein is a method of roughening a ceramic surface by forming mechanical interlocks in the ceramic surface by a chemical etching process, a thermal etching process, or a laser micromachining process. Also disclosed herein are components for use in semiconductor processing chambers (in particular, a deposition ring for use in a PVD chamber) which have at least one ceramic surface having mechanical interlocks formed therein by chemical etching, or laser micromachining. Ceramic surfaces which have been roughened according to the chemical etching, thermal etching, or laser micromachining process of the invention are less brittle and damaged than ceramic surfaces which are roughened using conventional grit blasting techniques. The method of the invention results in a roughened ceramic surface which provides good adherence to an overlying sacrificial layer (such as aluminium).

4. 发明公开

EP1480777A2 PLASMA-RESISTANT, WELDED ALUMINUM STRUCTURES FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
标题翻译：耐等离子体铝合金的焊接结构FOR USE中的设备在半导体生产
公开(公告)号：EP1480777A2
公开(公告)日：2004-12-01
申请号：EP03736437.9
申请日：2003-02-13
申请人： Applied Materials, Inc.
发明人： THACH, Senh , SUN, Jennifer, Y. , WU, Shun, Jackson , LIN, Yixing , STOW, Clifford, C.
IPC分类号： B23K20/12
CPC分类号： B23K20/24 , B23K20/12 , B23K20/129 , B23K20/2336 , B23K2201/40 , B23K2203/10 , Y10T428/12736
摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.

5. 发明公开

EP1472381A1 HALOGEN-RESISTANT, ANODIZED ALUMINIUM FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
标题翻译：防卤素铝阳极氧化使用中的设备在半导体生产
公开(公告)号：EP1472381A1
公开(公告)日：2004-11-03
申请号：EP03707741.9
申请日：2003-02-04
申请人： Applied Materials, Inc.
发明人： LIN, Yixing , WEST, Brian, T. , WANG, Hong , WU, Shun, Jackson , SUN, Jennifer, Y. , STOW, Clifford, C. , THACH, Senh
IPC分类号： C22C21/06 , C25D11/04 , C25D11/08
CPC分类号： C25D11/16 , C25D11/04 , C25D11/045
摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330 °C ; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

6. 发明公开

EP1415016A1 ELECTROCHEMICALLY ROUGHENED ALUMINUM SEMICONDUCTOR PROCESSING APPARATUS SURFACES 审中-公开
标题翻译：电化学磨面沿设备半导体加工
公开(公告)号：EP1415016A1
公开(公告)日：2004-05-06
申请号：EP02768339.0
申请日：2002-07-22
申请人： Applied Materials, INC.
发明人： SUN, Jennifer, Y. , STOW, Clifford, C. , THACH, Senh
IPC分类号： C23C16/44 , C23C16/458 , C25F3/04
CPC分类号： C25F3/04 , C23C16/4404 , Y10T428/265
摘要： A uniform, controllable method for electrochemically roughening an aluminum-comprising surface to be used in a semiconductor processing apparatus is disclosed. Typically the aluminum-comprising surface is aluminum or an aluminum alloy. The method involves immersing an aluminum-comprising surface in an HCl solution having a concentration ranging from about 1 volume % to about 5 volume %, at a temperature within the range of about 45 °C to about 80 °C, then applying an electrical charge having a charge density ranging from about 80 amps/ft.2 to about 250 amps/ft.2 for a time period ranging from about 4 minutes to about 25 minutes. A chelating agent may be added to enhance the roughening process. The electrochemical roughening method can be used on aluminum alloys in general, including but not limited to 6061 and LP. The electrochemical roughening provides a smoothly rolling surface which does not entrap particles and which provides increased surface area for semiconductor process byproduct adhesion. The roughened surface provides an excellent surface for subsequent anodization.

7. 发明申请

WO2003066920A1 HALOGEN-RESISTANT, ANODIZED ALUMINUM FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
标题翻译：用于半导体加工设备的耐高温铝，阳极氧化铝
公开(公告)号：WO2003066920A1
公开(公告)日：2003-08-14
申请号：PCT/US2003/003558
申请日：2003-02-04
申请人： APPLIED MATERIALS, INC.
发明人： LIN, Yixing , WEST, Brian, T. , WANG, Hong , WU, Shun, Jackson , SUN, Jennifer, Y. , STOW, Clifford, C. , THACH, Senh
IPC分类号： C22C21/06
CPC分类号： C25D11/16 , C25D11/04 , C25D11/045
摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330 °C ; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
摘要翻译：我们已经发现，通过将流动杂质及其化合物的含量维持在合金表面上的夹杂物干扰从合金表面到上覆的氧化铝保护膜的平滑过渡，铝合金制品的表面上形成颗粒状夹杂物在低于约330℃的温度下对铝合金进行热处理，并通过采用特定的电解工艺制备氧化铝保护膜。当考虑这些因素时，获得改进的氧化铝保护膜。

8. 发明申请

WO2003012162A1 ELECTROCHEMICALLY ROUGHENED ALUMINUM SEMICONDUCTOR PROCESSING APPARATUS SURFACES 审中-公开
标题翻译：电化学硬化铝半导体加工设备表面
公开(公告)号：WO2003012162A1
公开(公告)日：2003-02-13
申请号：PCT/US2002/023287
申请日：2002-07-22
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Jennifer, Y. , STOW, Clifford, C. , THACH, Senh
IPC分类号： C23C16/44
CPC分类号： C25F3/04 , C23C16/4404 , Y10T428/265
摘要： A uniform, controllable method for electrochemically roughening an aluminum-comprising surface to be used in a semiconductor processing apparatus is disclosed. Typically the aluminum-comprising surface is aluminum or an aluminum alloy. The method involves immersing an aluminum-comprising surface in an HCl solution having a concentration ranging from about 1 volume % to about 5 volume %, at a temperature within the range of about 45 °C to about 80 °C, then applying an electrical charge having a charge density ranging from about 80 amps/ft. 2 to about 250 amps/ft. 2 for a time period ranging from about 4 minutes to about 25 minutes. A chelating agent may be added to enhance the roughening process. The electrochemical roughening method can be used on aluminum alloys in general, including but not limited to 6061 and LP. The electrochemical roughening provides a smoothly rolling surface which does not entrap particles and which provides increased surface area for semiconductor process byproduct adhesion. The roughened surface provides an excellent surface for subsequent anodization.
摘要翻译：公开了一种用于电化学粗糙化用于半导体处理装置的含铝表面的均匀可控的方法。通常，包含铝的表面是铝或铝合金。该方法包括将含铝表面浸入浓度范围为约1体积％至约5体积％的HCl溶液中，温度在约45℃至约80℃的范围内，然后施加电荷具有约80安培/平方英尺至约250安培/平方英尺的电荷密度在约4分钟至约25分钟的时间段内。可以加入螯合剂以增强粗糙化过程。电化学粗糙化方法一般可用于铝合金，包括但不限于6061和LP。电化学粗糙化提供了一种平滑的滚动表面，其不会捕获颗粒并且为半导体工艺副产物附着提供增加的表面积。粗糙表面为随后的阳极氧化提供了极好的表面。

9. 发明申请

WO2003093521A1 HALOGEN-RESISTANT, ANODIZED ALUMINUM FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
标题翻译：用于半导体加工设备的耐高温铝，阳极氧化铝
公开(公告)号：WO2003093521A1
公开(公告)日：2003-11-13
申请号：PCT/US2003/013790
申请日：2003-04-30
申请人： APPLIED MATERIALS, INC.
发明人： LIN, Yixing , WEST, Brian, T. , WU, Shun, Jackson , STOW, Clifford, C. , THACH, Senh , WANG, Hong , SUN, Jennifer, Y.
IPC分类号： C22C21/06
CPC分类号： C25D11/04 , C22C21/06 , C25D11/045 , C25D11/06 , C25D11/16
摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330°C; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
摘要翻译：我们已经发现，通过将移动和非移动杂质的含量保持在内，在铝合金制品的表面上形成夹杂物，该夹杂物干扰从合金表面到上覆的氧化铝保护膜的平滑过渡特定范围并控制流动和非流动杂质及其化合物的颗粒尺寸和分布; 通过在低于约330℃的温度下对铝合金进行热处理; 并通过使用特定的电解工艺制备氧化铝保护膜。当考虑这些因素时，获得改进的氧化铝保护膜。

10. 发明申请

WO2003073478A2 PLASMA-RESISTANT, WELDED ALUMINUM STRUCTURES FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
标题翻译：用于半导体加工设备的耐等离子体焊接铝结构
公开(公告)号：WO2003073478A2
公开(公告)日：2003-09-04
申请号：PCT/US2003/004801
申请日：2003-02-13
申请人： APPLIED MATERIALS, INC.
发明人： THACH, Senh , SUN, Jennifer, Y. , WU, Shun, Jackson , LIN, Yixing , STOW, Clifford, C.
IPC分类号： H01L21/00
CPC分类号： B23K20/24 , B23K20/12 , B23K20/129 , B23K20/2336 , B23K2201/40 , B23K2203/10 , Y10T428/12736
摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.
摘要翻译：我们已经发现了一种生产复合形状的铝合金制品的方法，其中已经使用焊接来形成制品，其中在包括焊接接头的制品的表面上产生阳极氧化的铝涂层，并且其中阳极氧化的铝涂层是与现有技术中已知的用于暴露于腐蚀性等离子体环境的焊接制品相比提供了更好的性能。

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