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1. 发明授权

US08889235B2 Dielectric barrier deposition using nitrogen containing precursor 有权
标题翻译：使用含氮前体的介电阻挡层沉积
公开(公告)号：US08889235B2
公开(公告)日：2014-11-18
申请号：US12772518
申请日：2010-05-03
申请人： Anupama Mallikarjunan , Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill , Andrew David Johnson , Manchao Xiao
发明人： Anupama Mallikarjunan , Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill , Andrew David Johnson , Manchao Xiao
IPC分类号： H05H1/24 , H01L21/02 , H01L21/314 , H01L21/768 , C23C16/36
CPC分类号： C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/76831 , H01L21/76834
摘要： A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing the integrated circuit substrate having a dielectric film; contacting the substrate with a barrier dielectric film precursor comprising: RxR′y(NR″R′″)zSi wherein R, R′, R″ and R′″ are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R′ cannot both be hydrogen; forming the silicon carbonitride barrier dielectric film with C/Si ratio >0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.
摘要翻译：一种在电介质膜和集成电路基板的金属互连之间形成碳氮化硅阻挡电介质膜的方法，包括以下步骤：提供具有电介质膜的集成电路基板; 将衬底与阻挡电介质膜前体接触，包括：RxR'y（NR“R”“）zSi其中R，R'，R”和R“”各自独立地选自氢，直链或支链饱和或不饱和的烷基，或芳香; 其中x÷y + z = 4; z = 1-3; 但R，R'不能都是氢; 在集成电路基板上形成C / Si比> 0.8且N / Si比> 0.2的碳氮化硅势垒电介质膜。

2. 发明申请

US20100291321A1 Dielectric Barrier Deposition Using Nitrogen Containing Precursor 有权
标题翻译：使用含氮前驱体介质阻挡沉积
公开(公告)号：US20100291321A1
公开(公告)日：2010-11-18
申请号：US12772518
申请日：2010-05-03
申请人： Anupama Mallikarjunan , Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill , Andrew David Johnson , Manchao Xiao
发明人： Anupama Mallikarjunan , Raymond Nicholas Vrtis , Laura M. Matz , Mark Leonard O'Neill , Andrew David Johnson , Manchao Xiao
IPC分类号： H05H1/24
CPC分类号： C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/76831 , H01L21/76834
摘要： A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing the integrated circuit substrate having a dielectric film; contacting the substrate with a barrier dielectric film precursor comprising: RxR′y(NR″R′″)zSi wherein R, R′, R″ and R′″ are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R′ cannot both be hydrogen; forming the silicon carbonitride barrier dielectric film with C/Si ratio>0.8 and a N/Si ratio>0.2 on the integrated circuit substrate.
摘要翻译：一种在电介质膜和集成电路基板的金属互连之间形成碳氮化硅阻挡电介质膜的方法，包括以下步骤：提供具有电介质膜的集成电路基板; 将衬底与阻挡电介质膜前体接触，包括：RxR'y（NR“R”“）zSi其中R，R'，R”和R“”各自独立地选自氢，直链或支链饱和或不饱和的烷基，或芳香; 其中x÷y + z = 4; z = 1-3; 但R，R'不能都是氢; 在集成电路基板上形成C / Si比> 0.8且N / Si比> 0.2的碳氮化硅势垒电介质膜。

3. 发明授权

US08278222B2 Selective etching and formation of xenon difluoride 有权
标题翻译：选择性蚀刻和形成氙二氟化物
公开(公告)号：US08278222B2
公开(公告)日：2012-10-02
申请号：US12360588
申请日：2009-01-27
申请人： Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
发明人： Dingjun Wu , Eugene Joseph Karwacki, Jr. , Anupama Mallikarjunan , Andrew David Johnson
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B08B7/0035 , C23C16/4405 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/67028
摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
摘要翻译：本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体发电机及其混合物。

4. 发明申请

US20100022095A1 Selective Etching and Formation of Xenon Difluoride 有权
标题翻译：氙氟化物的选择性蚀刻和形成
公开(公告)号：US20100022095A1
公开(公告)日：2010-01-28
申请号：US12360588
申请日：2009-01-27
申请人： Dingjun Wu , Eugene Joseph Karwacki, JR. , Anupama Mallikarjunan , Andrew David Johnson
发明人： Dingjun Wu , Eugene Joseph Karwacki, JR. , Anupama Mallikarjunan , Andrew David Johnson
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/306 , C01B23/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/67028
摘要： This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.
摘要翻译：本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体发电机及其混合物。

5. 发明申请

US20130220410A1 Precursors for Photovoltaic Passivation 审中-公开
标题翻译：光伏钝化的前体
公开(公告)号：US20130220410A1
公开(公告)日：2013-08-29
申请号：US13595419
申请日：2012-08-27
申请人： Mary Kathryn Haas , Anupama Mallikarjunan , Robert Gordon Ridgeway , Katherine Anne Hutchison , Michael T. Savo
发明人： Mary Kathryn Haas , Anupama Mallikarjunan , Robert Gordon Ridgeway , Katherine Anne Hutchison , Michael T. Savo
IPC分类号： H01L31/0216
CPC分类号： H01L31/02167 , C23C16/345 , C23C16/402 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L31/068 , Y02E10/547
摘要： Deposition methods are disclosed for producing a passivation layer on a photovoltaic cell. Method includes depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. In one aspect, the silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family SiRxHy or selected from the family SiRxH, silane, and combinations thereof, wherein in SiRxHy x+y=4, y≠4 and R may be independently selected from the group consisting of C1-C8 linear alkyl, wherein the ligand may be saturated or unsaturated; C1-C8 branched alkyl, wherein the ligand may be saturated or unsaturated; C1-C8 cyclic alkyl, wherein the ligand may be saturated, unsaturated, or aromatic; and NR*3 wherein R* can be independently hydrogen; or linear, branched, cyclic, saturated, or unsaturated alkyl. Photovoltaic devices containing the passivation layers are also disclosed.
摘要翻译：公开了用于在光伏电池上制造钝化层的沉积方法。方法包括沉积包含至少一个进一步包括氧化硅和氮化硅层的双层的钝化层。在一个方面，分别用于沉积氧化硅层或氮化硅层的硅前体选自SiR x H y族或选自SiR x H，硅烷及其组合，其中SiR x H x x + y = 4，y <4，R可以独立地选自C1-C8直链烷基，其中配体可以是饱和或不饱和的; C1-C8支链烷基，其中配体可以是饱和或不饱和的; C 1 -C 8环烷基，其中配体可以是饱和的，不饱和的或芳族的; 和NR * 3，其中R *可以独立地为氢; 或直链，支链，环状，饱和或不饱和的烷基。还公开了含有钝化层的光伏器件。

6. 发明申请

US20130247971A1 Oxygen Containing Precursors for Photovoltaic Passivation 审中-公开
标题翻译：含氧光伏钝化前体
公开(公告)号：US20130247971A1
公开(公告)日：2013-09-26
申请号：US13610311
申请日：2012-09-11
申请人： Mary Kathryn Haas , Anupama Mallikarjunan , Robert Gordon Ridgeway , Katherine Anne Hutchison , Michael T Savo
发明人： Mary Kathryn Haas , Anupama Mallikarjunan , Robert Gordon Ridgeway , Katherine Anne Hutchison , Michael T Savo
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/56 , C23C28/04 , H01L31/02167 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： Methods for depositing a passivation layer on a photovoltaic cell are disclosed. Methods include depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. The silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family of Si(OR1)xR2y, or from the family of SiRxHy, silane, and combinations thereof; wherein x+y=4, y≠4; R1 is C1-C8 alkyl; R2 is selected from the group consisting of hydrogen, C1-C8 alkyl, and NR*3; R is C1-C8 alkyl or NR*3; wherein R* can be hydrogen or C1-C8 alkyl; C1-C8 alkyl can be linear, branched or cyclic, the ligand can be saturated, unsaturated, or aromatic (for cyclic alkyl). Photovoltaic devices containing the passivation layers are also disclosed.
摘要翻译：公开了在光伏电池上沉积钝化层的方法。方法包括沉积包括至少另外包含氧化硅和氮化硅层的双层的钝化层。用于沉积硅氧化物层或氮化硅层的硅前体分别选自Si（OR 1）x R 2y族或SiR x H y族，硅烷族及其组合的族; 其中x + y = 4，y <4; R1是C1-C8烷基; R2选自氢，C1-C8烷基和NR * 3; R是C 1 -C 8烷基或NR * 3; 其中R *可以是氢或C1-C8烷基; C1-C8烷基可以是直链，支链或环状的，配体可以是饱和的，不饱和的或芳族的（对于环状烷基）。还公开了含有钝化层的光伏器件。

7. 发明授权

US07585704B2 Method of producing highly strained PECVD silicon nitride thin films at low temperature 失效
标题翻译：在低温下生产高应变PECVD氮化硅薄膜的方法
公开(公告)号：US07585704B2
公开(公告)日：2009-09-08
申请号：US10907454
申请日：2005-04-01
申请人： Michael P. Belyansky , Oleg Gluschenkov , Ying Li , Anupama Mallikarjunan
发明人： Michael P. Belyansky , Oleg Gluschenkov , Ying Li , Anupama Mallikarjunan
IPC分类号： H01L21/82
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45523 , H01L21/02271 , H01L21/02274 , H01L21/3185 , H01L21/823807 , H01L21/823864 , H01L29/7833 , H01L29/7843
摘要： A method for increasing the level of stress for amorphous thin film stressors by means of modifying the internal structure of such stressors is provided. The method includes first forming a first portion of an amorphous film stressor material on at least a surface of a substrate, said first portion having a first state of mechanical strain defining a first stress value. After the forming step, the first portion of the amorphous film stressor material is densified such that the first state of mechanical strain is not substantially altered, while increasing the first stress value. In some embodiments, the steps of forming and densifying are repeated any number of times to obtain a preselected and desired thickness for the stressor.
摘要翻译：提供了通过改变这种压力源的内部结构来增加非晶薄膜应力的应力水平的方法。该方法包括首先在基底的至少一个表面上形成非晶膜应力材料的第一部分，所述第一部分具有限定第一应力值的第一机械应变状态。在成形步骤之后，非晶态应力材料的第一部分被致密化，使得在增加第一应力值的同时，基本上不改变机械应变的第一状态。在一些实施例中，形成和致密化的步骤重复任意次数，以获得应激源的预选和期望的厚度。

8. 发明申请

US20060223290A1 METHOD OF PRODUCING HIGHLY STRAINED PECVD SILICON NITRIDE THIN FILMS AT LOW TEMPERATURE 失效
标题翻译：在低温下生产高应变PECVD硅氮化物薄膜的方法
公开(公告)号：US20060223290A1
公开(公告)日：2006-10-05
申请号：US10907454
申请日：2005-04-01
申请人： Michael Belyansky , Oleg Gluschenkov , Ying Li , Anupama Mallikarjunan
发明人： Michael Belyansky , Oleg Gluschenkov , Ying Li , Anupama Mallikarjunan
IPC分类号： H01L21/265 , H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45523 , H01L21/02271 , H01L21/02274 , H01L21/3185 , H01L21/823807 , H01L21/823864 , H01L29/7833 , H01L29/7843
摘要： A method for increasing the level of stress for amorphous thin film stressors by means of modifying the internal structure of such stressors is provided. The method includes first forming a first portion of an amorphous film stressor material on at least a surface of a substrate, said first portion having a first state of mechanical strain defining a first stress value. After the forming step, the first portion of the amorphous film stressor material is densified such that the first state of mechanical strain is not substantially altered, while increasing the first stress value. In some embodiments, the steps of forming and densifying are repeated any number of times to obtain a preselected and desired thickness for the stressor.
摘要翻译：提供了通过改变这种压力源的内部结构来增加非晶薄膜应力的应力水平的方法。该方法包括首先在基底的至少一个表面上形成非晶膜应力材料的第一部分，所述第一部分具有限定第一应力值的第一机械应变状态。在成形步骤之后，非晶态应力材料的第一部分被致密化，使得在增加第一应力值的同时，基本上不改变机械应变的第一状态。在一些实施例中，形成和致密化的步骤重复任意次数，以获得应激源的预选和期望的厚度。

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