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    • 1. 发明授权
    • Dual layer color-center patterned light source
    • US07260127B2
    • 2007-08-21
    • US10934251
    • 2004-09-03
    • Anthony D. KurtzJoseph R. Van DeWeert
    • Anthony D. KurtzJoseph R. Van DeWeert
    • H01S3/16H01S3/14H01S3/06
    • C30B29/12C30B23/00C30B33/04H01S3/0612H01S3/0809H01S3/163H01S3/1681H01S3/2375H01S3/2383
    • A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.
    • 2. 发明授权
    • Dual layer color-center patterned light source
    • 双层彩色中心图案光源
    • US06795465B2
    • 2004-09-21
    • US10120698
    • 2002-04-11
    • Anthony D. KurtzJoseph R. Van DeWeert
    • Anthony D. KurtzJoseph R. Van DeWeert
    • H01S316
    • C30B29/12C30B23/00C30B33/04H01S3/0612H01S3/0809H01S3/163H01S3/1681H01S3/2375H01S3/2383
    • A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.
    • 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体,例如氯化钠或氯化钾。 晶体是所选化合物的纯形式,并且可能含有污染物,这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部,沉积不同类型晶体的第二薄层,例如氟化锂或氟化钠。 当这两层用伽马射线照射时,它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异,它们的色心将处于不同的波长。 当以其独特的吸收频率照射时,两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能,使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种,例如通过加热特定化合物的阴离子层,然后将第二离子晶体沉积在第一离子晶体上,然后沉积 阴离子层在第二个晶体上,然后加热,以产生一个结构,将其延伸到不同的频率。
    • 3. 发明授权
    • Apparatus and methods for linearizing piezoresistive wheatstone bridges
    • 用于线性化压阻式惠斯通电桥的装置和方法
    • US07714591B2
    • 2010-05-11
    • US11512598
    • 2006-08-30
    • Anthony D. KurtzJoseph R. Van DeWeert
    • Anthony D. KurtzJoseph R. Van DeWeert
    • G01R27/02
    • G01L9/0052G01L9/06
    • A pressure sensing apparatus including: at least one deflectable diaphragm having a center, wherein each diaphragm supports: at least one positive piezoresistive gauge and at least one negative piezoresistive gauge coupled in series across a voltage differential in a half-Wheatstone bridge configuration having an output between the positive and negative piezoresistive gauges; and, a compensating piezoresistive gauge coupled in series with the half-Wheatstone bridge configuration across the voltage differential; wherein, the compensating piezoresistive gauge is nearer the center of the diaphragm than the negative piezoresitive gauge, the negative piezoresitive gauge is nearer the center of the diaphragm than the positive piezoresitive gauge, and the compensating piezoresistive gauge linearizes the half-Wheatstone bridge output.
    • 一种压力感测装置,包括:至少一个具有中心的可偏转隔膜,其中每个隔膜支撑:至少一个正压阻计和至少一个负压阻力表,其串联连接在半惠斯通电桥配置中的电压差下, 正,负压阻计之间; 以及与跨越电压差的半惠斯通电桥配置串联耦合的补偿压阻表; 其中,补偿压阻计比阴极压力表更接近隔膜的中心,负压电测量计比正压电测量仪更靠近隔膜的中心,补偿压阻测量仪将半惠斯通电桥输出线性化。
    • 5. 发明申请
    • Apparatus and methods for linearizing piezoresistive wheatstone bridges
    • 用于线性化压阻式惠斯通电桥的装置和方法
    • US20070152679A1
    • 2007-07-05
    • US11512598
    • 2006-08-30
    • Anthony D. KurtzJoseph R. Van DeWeert
    • Anthony D. KurtzJoseph R. Van DeWeert
    • G01R27/02
    • G01L9/0052G01L9/06
    • A pressure sensing apparatus including: at least one deflectable diaphragm having a center, wherein each diaphragm supports: at least one positive piezoresistive gauge and at least one negative piezoresistive gauge coupled in series across a voltage differential in a half-Wheatstone bridge configuration having an output between the positive and negative piezoresistive gauges; and, a compensating piezoresistive gauge coupled in series with the half-Wheatstone bridge configuration across the voltage differential; wherein, the compensating piezoresistive gauge is nearer the center of the diaphragm than the negative piezoresitive gauge, the negative piezoresitive gauge is nearer the center of the diaphragm than the positive piezoresitive gauge, and the compensating piezoresistive gauge linearizes the half-Wheatstone bridge output.
    • 一种压力感测装置,包括:至少一个具有中心的可偏转隔膜,其中每个隔膜支撑:至少一个正压阻计和至少一个负压阻力表,其串联连接在半惠斯通电桥配置中的电压差下, 正,负压阻计之间; 以及与跨越电压差的半惠斯通电桥配置串联耦合的补偿压阻表; 其中,补偿压阻计比阴极压力表更接近隔膜的中心,负压电测量计比正压电测量仪更靠近隔膜的中心,补偿压阻测量仪将半惠斯通电桥输出线性化。
    • 6. 发明授权
    • Torque insensitive header assembly
    • 扭矩不敏感头部组件
    • US08286495B2
    • 2012-10-16
    • US13010837
    • 2011-01-21
    • Anthony D. KurtzAdam KaneBoaz Kochman
    • Anthony D. KurtzAdam KaneBoaz Kochman
    • G01L9/06
    • G01L7/08G01L9/0051G01L9/0055G01L9/06
    • There is disclosed a high pressure sensing header which is relatively insensitive to mounting torque. The header comprises an outer torque isolating shell which surround an inner “H” section header. The inner “H” section header has a thick diaphragm and is surrounded by the torque isolating shell which is secured to the “H” section header at a peripheral flange of the “H” section header. In this manner when the header is installed, the installation force is absorbed by the outer shell and there is no installation force or torque exhibited by the inner “H” section which will respond only to stress due to pressure. The torque isolating shell also contains a top surface which has a counterbore that accommodates a crush ring. When the unit is installed, the crush ring is crushed against an installation wall to enable the inner header to receive pressure without experiencing significant installation force.
    • 公开了一种对安装扭矩相对不敏感的高压感测头。 头部包括围绕内部H部分头部的外部扭矩隔离壳体。 内部H部分头部具有厚的隔膜,并被扭矩隔离壳围绕,该扭矩隔离壳体在H部分头部的周边凸缘处固定到H部分头部。 以这种方式,当安装头部时,安装力被外壳吸收,并且没有由内部H部分表现出的安装力或扭矩,其仅响应于由于压力引起的应力。 扭矩隔离壳体还包括具有容纳压溃环的沉孔的顶表面。 当装置安装时,挤压环被压在安装壁上,以使内部集管接收压力,而不会受到显着的安装力。
    • 7. 发明授权
    • Flat planar pressure transducer
    • 平面平面压力传感器
    • US08196476B2
    • 2012-06-12
    • US13022132
    • 2011-02-07
    • Anthony D. KurtzScott Goodman
    • Anthony D. KurtzScott Goodman
    • G01L9/06
    • G01L9/0054G01L19/0084G01L19/0627G01L19/0636Y10T29/49007
    • There is disclosed a flat planar pressure transducer which comprises a planar insulative substrate of a rectangular configuration. Disposed on the substrate is an array of conductive areas which extend from a contact terminal area of said substrate to an end of the substrate. There is a leadless sensor module positioned at said contact terminal area, with the contacts of said leadless sensor contacting contact terminals of said contact terminal area. The leadless sensor is enclosed by an enclosure which is coupled to the substrate and surrounds the sensor. The enclosure has a screen positioned on the top surface to prevent particles from entering or damaging the leadless sensor. The above-noted structure forms a very flat, compact pressure transducer which can be utilized in lieu of flex circuit type devices and provides greater mechanical stability as well as a more accurate output.
    • 公开了一种平面平面压力传感器,其包括矩形构造的平面绝缘衬底。 设置在基板上的是从所述基板的接触端子区域延伸到基板的端部的导电区域的阵列。 存在位于所述接触端子区域处的无引线传感器模块,所述无引线传感器的触点接触所述接触端子区域的接触端子。 无引线传感器由耦合到基板并围绕传感器的外壳封闭。 外壳具有位于顶部表面上的屏幕,以防止颗粒进入或损坏无铅传感器。 上述结构形成了非常平坦的紧凑型压力传感器,其可以用于代替柔性电路型装置,并且提供更大的机械稳定性以及更准确的输出。
    • 9. 发明授权
    • Enhanced static-dynamic pressure transducer suitable for use in gas turbines and other compressor applications
    • 适用于燃气轮机和其他压缩机应用的增强静态压力传感器
    • US08074521B2
    • 2011-12-13
    • US12614741
    • 2009-11-09
    • Anthony D. KurtzNora Kurtz, legal representativeBoaz KochmanAdam HurstTonghuo Shang
    • Anthony D. KurtzBoaz KochmanAdam HurstTonghuo Shang
    • G01L13/02
    • G01L19/00G01L9/0052G01L15/00G01L19/0609
    • A filter assembly for use with a static-dynamic piezoresistive pressure transducer that measures low amplitude, dynamic pressure perturbations superimposed on top of a high static pressure through the implementation of a low-pass mechanical filter assembly is disclosed. The filter assembly may comprise a dual lumen reference tube and a removable filter subassembly further comprising a porous metal filter and narrow diameter tube. The transducer, which may be capable of operating at ultra-high temperatures and in harsh environments, may comprise of a static piezoresistive pressure sensor, which measures the large pressures on the order of 200 psi and greater, and an ultrasensitive, dynamic piezoresistive pressure sensor which may capture small, high frequency pressure oscillations on the order of a few psi or less. The filter assembly may transmit static pressure to the back of the dynamic pressure sensor to cancel out the static pressure present at the front of the sensor while keeping dynamic pressure from reaching the back of the sensor. In this manner, the filter assembly enables the transducer to accurately read dynamic pressure in the presence of high static pressure without rupturing the thin diaphragm of the dynamic pressure sensor.
    • 公开了一种与静态压阻式压力传感器一起使用的过滤器组件,其通过实施低通机械过滤器组件来测量叠加在高静态压力之上的低振幅动态压力扰动。 过滤器组件可以包括双腔参考管和可移除的过滤器子组件,其还包括多孔金属过滤器和窄直径管。 可以在超高温和恶劣环境下工作的换能器可以包括静压压力传感器,该压力传感器测量大约200psi和更大的压力,以及超灵敏的压阻压力传感器 这可以捕获小于或等于几psi的小的高频压力振荡。 过滤器组件可以将静压传递到动态压力传感器的背面,以抵消存在于传感器前部的静压力,同时保持动态压力不到达传感器的后部。 以这种方式,过滤器组件使得换能器能够在存在高静态压力的情况下准确地读取动态压力而不破坏动态压力传感器的薄膜。