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1. 发明授权

US4494133A Infrared sensitive photo diode 失效
标题翻译：红外敏感光电二极管
公开(公告)号：US4494133A
公开(公告)日：1985-01-15
申请号：US386082
申请日：1982-06-07
申请人： Anthony B. Dean , Robin F. C. Farrow , Piero Migliorato , Anthony M. White , Gerald M. Williams
发明人： Anthony B. Dean , Robin F. C. Farrow , Piero Migliorato , Anthony M. White , Gerald M. Williams
IPC分类号： H01L31/10 , H01L27/14 , H01L27/146
CPC分类号： H01L27/14649 , H01L27/14692
摘要： A photo diode formed by a substrate of Cd.sub.x Hg.sub.1-x Te covered with a layer of CdTe forming a p-n junction. The substrate may be p-type in which case the layer is n-type or vice versa. An array of photo diodes may be formed by covering the substrate with semi-insulating CdTe and forming islets of In on the CdTe. Heating causes In to diffuse into the CdTe doping it n-type. This results in regions of n-type CdTe surrounded by semi-insulating CdTe each region forming, with the substrate, a photo diode. The heating also causes diffusion between the Cd.sub.x Hg.sub.1-x Te and CdTe to give a graded heterostructure. Electrical connections are made to the substrate, and each n-type region. The n-type CdTe region may alternatively be formed by molecular beam epitaxial growth techniques using a beam of In dopant.
摘要翻译：由CdxHg1-xTe的衬底形成的光电二极管，其覆盖有形成p-n结的CdTe层。衬底可以是p型，在这种情况下，该层为n型，反之亦然。可以通过用半绝缘CdTe覆盖衬底并在CdTe上形成In的岛来形成光二极管阵列。加热导致In扩散到CdTe掺杂n型。这导致由半绝缘CdTe围绕的n型CdTe的区域，每个区域与衬底形成光电二极管。加热也导致CdxHg1-xTe和CdTe之间的扩散，从而产生渐变异质结构。电连接到基板和每个n型区域。可以通过使用In掺杂剂的束的分子束外延生长技术来形成n型CdTe区域。

2. 发明授权

US4599759A Transfer apparatus 失效
标题翻译：转运设备
公开(公告)号：US4599759A
公开(公告)日：1986-07-15
申请号：US615918
申请日：1984-05-31
申请人： Frank C. Price , Anthony M. White
发明人： Frank C. Price , Anthony M. White
IPC分类号： A43D111/00 , B23Q7/04 , B23Q7/06 , B23Q7/14 , B65G47/90 , A43D11/00 , B65G47/02
CPC分类号： A43D111/00 , B23Q7/04 , B23Q7/06 , B23Q7/1421 , B65G47/904
摘要： The transfer apparatus comprises a transfer arm (16) and a distributor (18). The transfer arm has two axes of movement (22,26) and is non-extendable so that it moves between a take-off station and an intermediate station (I) through a fixed distance. The distributor (18) has a table (50) which receives a shoe (S) at the intermediate station (I). Furthermore, the table (50) can be positioned at any one of four stations (I,F1,F2,F3) each aligned with a channel (12) of a heat setting apparatus (14). A pneumatic control circuit causes shoes (S) fed successively to the table (50) to be transferred in a sequence to the channels (12) by operation of pusher means.The apparatus is suitable for transferring shoes from a lasting machine, a shoe support (10) of which can be positioned at the take-off station, to a heat setting apparatus (14).
摘要翻译：传送装置包括传送臂（16）和分配器（18）。传送臂具有两个移动轴线（22,26），并且是不可延伸的，使得其在起飞站和中间站（I）之间移动一定距离。分配器（18）具有在中间站（I）处接收鞋（S）的台（50）。此外，台（50）可以位于与热定形装置（14）的通道（12）对准的四个站（I，F1，F2，F3）中的任一个处。气动控制电路使连续送到工作台（50）的鞋（S）通过推动装置的操作依次传送到通道（12）。该设备适用于将鞋子从持久机器转移到热定型设备（14）上，鞋子支架（10）可以位于起飞站。

3. 发明授权

US4572953A Infra red photo detector systems 失效
标题翻译：红外光电探测器系统
公开(公告)号：US4572953A
公开(公告)日：1986-02-25
申请号：US485888
申请日：1983-04-18
申请人： Charles T. Elliott , Anthony M. White
发明人： Charles T. Elliott , Anthony M. White
IPC分类号： G01J1/42 , G01B11/00 , H01L31/09 , H01L31/00
CPC分类号： H01L31/09 , G01B11/00
摘要： An infra red photo detector system comprises a piece of detector material, such as Cd.sub.x Hg.sub.1-x Te, InSb, InAs, etc, carrying at least a pair of spaced electrodes. An optical arrangement directs a small spot of radiation onto the detector. The position of the small spot on the much larger detector is found by applying an electrical bias between the electrodes causing a drift of photo carriers. The bias may be of alternating polarity and the detector output measured at each polarity. Alternatively a high frequency bias may be applied and the A.C. offset from the detector used to indicate spot position. Alternatively the spot position may be modulated or swept along the detector by a mirror moving in a sawtooth scanning action.
摘要翻译：红外光电检测器系统包括一块检测器材料，例如CdxHg1-xTe，InSb，InAs等，其携带至少一对隔开的电极。光学装置将小的辐射点引导到检测器上。通过在电极之间施加电偏压导致光载体的漂移，可以发现较大检测器上的小斑点的位置。该偏压可以是交替极性，并且在每个极性处测量检测器输出。或者，可以施加高频偏置，并且来自检测器的交流偏移用于指示光斑位置。或者，斑点位置可以通过以锯齿扫描动作移动的反射镜沿检测器被调制或扫掠。

4. 再颁专利

USRE38582E1 Semiconductor diode with suppression of auger generation processes 有权
标题翻译：具有抑制螺旋钻生成工艺的半导体二极管
公开(公告)号：USRE38582E1
公开(公告)日：2004-09-14
申请号：US10179342
申请日：2002-06-26
申请人： Anthony M. White
发明人： Anthony M. White
IPC分类号： H01L3100
CPC分类号： H01L31/1032 , H01L29/22 , H01L29/861 , H01L31/02966
摘要： A multi-layer Auger suppressed diode having at least two exclusion interfaces and at least two extraction interfaces. A specific embodiment has two composite contacts, each consisting of a heavily doped layer (3, 4) and a buffer layer (8, 9) of lower doped, high bandgap material sandwiched between the heavily doped layer and the active region (2) of the device.

5. 发明授权

US4551623A Photoconductive detector with an A/C bias and responsivity dependent upon the polarity of the bias 失效
标题翻译：具有A / C偏置和响应度的光导检测器取决于偏置的极性
公开(公告)号：US4551623A
公开(公告)日：1985-11-05
申请号：US441867
申请日：1982-11-15
申请人： Charles T. Elliott , Anthony M. White
发明人： Charles T. Elliott , Anthony M. White
IPC分类号： G01J1/44 , G01J5/30 , H01L27/146 , H01L31/0248 , H01L31/09 , H04N5/33 , H04N5/369 , H04N5/372 , H01J40/14
CPC分类号： H01L27/14669 , G01J5/30 , H01L31/09 , H04N3/1518 , H04N3/1525 , H04N5/33
摘要： An alternating bias is applied to a modified photoconductive detector and photosignal extracted from each detector element. This extraction may be performed using an integrator to produce a dc signal output, or alternatively by using a high-pass filter or phase-sensitive detector to extract a photosignal at an harmonic of the bias frequency. The detector used is provided with elements that have a responsivity that is a different function of bias amplitude for each polarity. The detector element may be shaped with variation in width or depth, to produce this differential responsivity. Alternatively element bias contacts may be of different width to produce field gradient and differential responsivity. It is advantageous to obscure a part of each element area by including an opaque mask.
摘要翻译：将交替偏压施加到从每个检测器元件提取的修饰的光电导检测器和光信号。可以使用积分器来执行该提取以产生直流信号输出，或者通过使用高通滤波器或相敏检测器以偏置频率的谐波提取光信号。使用的检测器具有对每个极性具有不同偏置幅度函数的响应度的元件。检测器元件可以被成形为具有宽度或深度的变化，以产生该差分响应度。或者，元件偏置触点可以具有不同的宽度以产生场梯度和差分响应度。通过包括不透明掩模来模糊每个元件区域的一部分是有利的。

6. 发明授权

US4926228A Photoconductive detector arranged for bias field concentration at the output bias contact 失效
标题翻译：光电导检测器设置在输出偏置触点处的偏置场浓度
公开(公告)号：US4926228A
公开(公告)日：1990-05-15
申请号：US811304
申请日：1985-12-16
申请人： Timothy Ashley , Charles T. Elliott , Anthony M. White
发明人： Timothy Ashley , Charles T. Elliott , Anthony M. White
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/09
CPC分类号： H01L27/14669 , H01L31/0224 , H01L31/09
摘要： A detector, of photosensitive semiconductor material with input and output bias contacts. To improve both frequency response and spatial resolution, minority carriers having tendency to accumulate in the vicinity of the output bias contact are instead rapidly swept out, being driven towards this contact by a concentrated electric field. To produce a local field concentration, the output bias contact may be extended towards the input bias contact, or the detector material near this contact may be configured by slotting or tapering.
摘要翻译：具有输入和输出偏置触点的感光半导体材料的检测器。为了改善频率响应和空间分辨率，具有积累在输出偏置接触附近的倾向的少数载流子被快速地扫过，被集中的电场驱向该接触。为了产生局部场浓度，输出偏置触点可以朝向输入偏置触点延伸，或者该触点附近的检测器材料可以通过开槽或渐缩来配置。

7. 发明授权

US4369536A Apparatus for use in heat setting a lasted shoe upper 失效
标题翻译：用于热定形持续鞋面的装置
公开(公告)号：US4369536A
公开(公告)日：1983-01-25
申请号：US214232
申请日：1980-12-08
申请人： Raymond Hanson , Anthony M. White
发明人： Raymond Hanson , Anthony M. White
IPC分类号： A43D11/14 , A43D11/00
CPC分类号： A43D11/145
摘要： The machine comprises a plurality of substantially enclosed channels in which a lasted shoe upper is subjected to hot air blown from both sides of the channel. Conveyors carry the uppers along the channels past inlets located at a distance of from 6 to 20 cms from the center-line of the lasted upper as it passes longitudinally along the channel. This arrangement enables air to be blown on to the uppers at high velocity. Moistening means may be provided to introduce moisture into the air before it is blown on to the uppers.
摘要翻译：机器包括多个基本封闭的通道，其中持续的鞋面经受从通道两侧吹出的热空气。输送机沿着通道沿着通道沿着通道沿着通道纵向延伸，与上一个上部的中心线距离6至20厘米的距离处沿着通道运送。这种布置使得空气以高速度被吹到鞋面上。可以提供湿气装置以在其吹送到鞋面之前将空气引入空气中。

8. 发明授权

US4176044A Process for alkylating waxy hydrocarbons with C.sub.3 -C.sub.5 carbon atom secondary alcohols as catalyst 失效
标题翻译：用C3-C5碳原子仲醇作为催化剂烷基化蜡质烃的方法
公开(公告)号：US4176044A
公开(公告)日：1979-11-27
申请号：US908525
申请日：1978-05-22
申请人： Anthony M. White
发明人： Anthony M. White
IPC分类号： C10G50/02
CPC分类号： C10G50/02
摘要： Waxy, normally solid hydrocarbons are alkylated to form liquid hydrocarbons boiling in the lube oil range by contacting the wax and a low molecular weight olefin, such as ethylene, with a catalyst comprising a C.sub.3 -C.sub.5 carbon atom secondary alcohol at elevated temperature and pressure. This process is useful for making relatively high VI lube oils from wax, for decreasing the pour point of jet fuels and for dewaxing lube oil feedstocks.
摘要翻译：通常将固体碳氢化合物烷基化以形成在润滑油范围内沸腾的液体烃，通过使蜡和低分子量烯烃如乙烯与升高的温度和压力下的包含C 3 -C 5碳原子的醇的催化剂接触。该方法可用于制备来自蜡的相对较高的VI润滑油，用于降低喷射燃料的倾点和用于脱蜡润滑油原料。

9. 发明授权

US06359283B1 Noise reduced photon detector 有权
标题翻译：降噪光子探测器
公开(公告)号：US06359283B1
公开(公告)日：2002-03-19
申请号：US09451111
申请日：1999-11-30
申请人： Neil T. Gordon , Anthony M. White , Charles T. Elliott
发明人： Neil T. Gordon , Anthony M. White , Charles T. Elliott
IPC分类号： G01T124
CPC分类号： H01L27/14649 , H01L27/1462 , H01L27/14625
摘要： A noise reduced photon detector incorporates an array (10) of semiconductor diode detector elements (12). Each element (12) has an extrinsic active layer (20) sandwiched between two layers (18, 22) of wider bandgap and mutually opposite conductivity type. These layers are in turn sandwiched between two further layers (16, 24) of wider bandgap than the active layer (20) and of higher doping than the other layers (18, 22). A mirror (34) extends round much the array (10) and isolates each element (12) from photons emitted by other elements (12). In operation the elements (12) are reverse biased and exhibit negative luminescence which reduces their photon emission. These two effects reduce unwanted photon generation and absorption, and consequently photon noise is also reduced.
摘要翻译：噪声降低的光子检测器包括半导体二极管检测器元件（12）的阵列（10）。每个元件（12）具有夹在更宽带隙和相互相反导电类型的两层（18,22）之间的外在有源层（20）。这些层又被夹在比有源层（20）更宽的带隙的两个另外的层（16,24）之间，并且比其它层（18,22）具有更高的掺杂。反射镜（34）围绕阵列（10）延伸并且将每个元件（12）与由其它元件（12）发射的光子隔离。在操作中，元件（12）被反向偏置并且表现出负的发光，这降低了它们的光子发射。这两种效应减少了不必要的光子产生和吸收，因此光子噪声也降低了。

10. 发明授权

US4679063A Infra red detectors 失效
标题翻译：红外探测器
公开(公告)号：US4679063A
公开(公告)日：1987-07-07
申请号：US534692
申请日：1983-09-22
申请人： Anthony M. White
发明人： Anthony M. White
IPC分类号： G01J5/02 , G01J5/28 , H01L31/10 , H01L31/109 , H01L31/11 , H01L27/14
CPC分类号： H01L31/1105 , H01L31/101
摘要： A detector in which a barrier region is interposed in the current path between the emitter and collector of the detector. This region is of a material having a valance band edge approximately level to that of the emitter material and an appreciably wider band gap. It thus serves to impede majority carrier current flow and as a consequence device resistance is high. When the detector is biased, the pedestal contribution to detector signal is low. The collector may be of semiconductor material of the same majority carried type as the emitter material; or may be of opposite type but dopant enriched; or it may be a Schottky metal contact. In one variant of the detector, the emitter and collector are located on opposite sides of the barrier and are of different bandgap materials. The infra red band response of this detector can be changed by reversing bias polarity. In another variant of the detector the emitter is in strip form and has a pair of bias contacts. The barrier and collector are located on the strip at a position between these contacts and provide a high resistance read-out structure. In one further variant of the detector the emitter, the collector, together with additional emitter-collector regions, are formed from a single layer of photosensitive material on one side of the barrier and provide a high resistance, series connected, multi-element structure.
摘要翻译：其中在检测器的发射极和集电极之间的电流路径中插入有阻挡区域的检测器。该区域是具有与发射极材料的价带大致一致的价带边缘的材料和明显更宽的带隙。因此，其用于阻止多数载流子电流流动，并且因此器件电阻较高。当检测器偏置时，基座对检测器信号的贡献较低。集电极可以是与发射极材料相同的多数承载类型的半导体材料; 或者可以是相反的类型但掺杂剂富集; 或者它可能是肖特基金属接触。在检测器的一个变型中，发射极和集电极位于屏障的相对侧上并具有不同的带隙材料。通过反转偏置极性可以改变该检测器的红外线响应。在检测器的另一种变型中，发射器是带状形式并且具有一对偏置触点。屏障和集电器位于这些触点之间的位置上，并提供高电阻读出结构。在检测器的另一个变体中，发射极，集电极以及额外的发射极 - 集电极区域由阻挡层一侧上的单层感光材料形成，并提供高电阻，串联连接的多元件结构。

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