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    • 1. 发明授权
    • Method and apparatus for adding/droping optical signals in a semiconductor substrate
    • 用于在半导体衬底中加/减光信号的方法和装置
    • US06856732B2
    • 2005-02-15
    • US09967365
    • 2001-09-28
    • Ansheng LiuMario J. PanicciaRemus NicolaescuAndrew C. AlduinoLing Liao
    • Ansheng LiuMario J. PanicciaRemus NicolaescuAndrew C. AlduinoLing Liao
    • G02B6/12G02B6/124G02F1/01G02F1/025G02B6/42
    • G02B6/124G02B2006/12097G02B2006/12135G02F1/0147G02F1/025G02F2201/307
    • A semiconductor-based tunable add/drop method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate. Portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed along the semiconductor substrate. In another embodiment, the portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of modulated charged regions. Portions of the second and third optical beams not reflected are directed to a second 3 dB optical coupler disposed in the semiconductor substrate. The portions of the second and third optical beams not reflected are combined into a fourth optical beam with the second 3 dB optical coupler.
    • 一种基于半导体的可调加/减方法和装置。 在本发明的一个方面中,根据本发明实施例的方法包括:将具有多个波长的第一光束分成第二和第三光束,其中第一个3dB光耦合器设置在半导体衬底中。 具有可调谐波长的第二和第三光束的部分被分别沿着半导体衬底设置的第一和第二多个硅和多晶硅接口反射回到第一3d分量光耦合器。 在另一个实施例中,具有可调谐波长的第二和第三光束的部分被第一和第二多个调制带电区域反射回到第一3d分量光耦合器。 未反射的第二和第三光束的部分被引导到设置在半导体衬底中的第二3dB光耦合器。 未反射的第二和第三光束的部分与第二3dB光耦合器组合成第四光束。
    • 3. 发明授权
    • Method and apparatus for tuning a laser with a Bragg grating in a semiconductor substrate
    • 用于在半导体衬底中用布拉格光栅调谐激光的方法和装置
    • US06853671B2
    • 2005-02-08
    • US09967445
    • 2001-09-28
    • Ansheng LiuMario J. PanicciaRemus NicolaescuRichard Jones
    • Ansheng LiuMario J. PanicciaRemus NicolaescuRichard Jones
    • G02B6/12G02B6/124G02F1/01G02F1/025H01S3/08
    • G02B6/124G02B2006/12097G02B2006/12135G02F1/0147G02F1/025G02F2201/307
    • A semiconductor-based laser tuning method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a gain medium disposed in a semiconductor substrate. A laser cavity is disposed in the semiconductor substrate and is optically coupled to the gain medium. A first reflector defines one end of the laser cavity. The first reflector includes a first tunable Bragg grating disposed in the semiconductor substrate. The first tunable Bragg grating includes a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the Bragg grating. The first tunable Bragg grating selectively reflects light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity. A second reflector defines an other end of the laser cavity.
    • 一种基于半导体的激光调谐方法和装置。 在本发明的一个方面中,根据本发明实施例的装置包括设置在半导体衬底中的增益介质。 激光腔设置在半导体衬底中并与光学耦合到增益介质。 第一反射器限定激光腔的一端。 第一反射器包括设置在半导体衬底中的第一可调谐布拉格光栅。 第一可调谐布拉格光栅包括沿着半导体衬底的第一多个硅和多晶硅界面,使得沿着布拉格光栅具有第一多个折射率扰动。 第一可调谐布拉格光栅选择性地反射具有可调谐中心波长的光,以便通过激光腔中具有可调中心波长的受激发射发光。 第二反射器限定激光腔的另一端。
    • 6. 发明授权
    • Method and apparatus for Raman ring resonator based laser/wavelength converter
    • 用于拉曼环谐振器的激光/波长转换器的方法和装置
    • US07046714B2
    • 2006-05-16
    • US10659009
    • 2003-09-10
    • Remus NicolaescuMario J. Paniccia
    • Remus NicolaescuMario J. Paniccia
    • H01S3/083
    • H01S3/0941G02B6/12004H01S3/005H01S3/083H01S3/30
    • A Raman ring resonator based laser and wavelength converter method and apparatus. In one aspect of the present invention, the disclosed method includes directing a first optical beam of a first wavelength and a first power level into a first ring resonator defined in a semiconductor material. Emission of a second optical beam of a second wavelength is caused in the first ring resonator by propagating the first optical beam around the first ring resonator. The first power level is sufficient to cause the emission of the second optical beam. The first optical beam is directed out of the first ring resonator after a round trip of the first optical beam around the first ring resonator. The second optical beam is recirculated around the first ring resonator to further stimulate the emission of the second optical beam in the first ring resonator.
    • 一种拉曼环形谐振器的激光和波长转换器的方法和装置。 在本发明的一个方面,所公开的方法包括将第一波长和第一功率电平的第一光束引导到限定在半导体材料中的第一环形谐振器中。 通过在第一环形谐振器周围传播第一光束,在第一环形谐振器中产生第二波长的第二光束的发射。 第一功率电平足以引起第二光束的发射。 在第一光束围绕第一环形谐振器的往返之后,第一光束被引导出第一环形谐振器。 第二光束围绕第一环形谐振器再循环,以进一步刺激第一环形谐振器中的第二光束的发射。
    • 7. 发明授权
    • Three dimensional semiconductor based optical switching device
    • 基于三维半导体的光开关器件
    • US07437026B2
    • 2008-10-14
    • US10947633
    • 2004-09-22
    • Remus NicolaescuMario J. Paniccia
    • Remus NicolaescuMario J. Paniccia
    • G02F1/295
    • G02F1/025
    • A device with optical switching between multiple layers of a semiconductor die is disclosed. In one aspect of the present invention, the disclosed apparatus includes a first semiconductor material layer of a semiconductor die. The first semiconductor material layer has a first optical waveguide. A second semiconductor material layer is also included in the semiconductor die. The second semiconductor material layer has a second optical waveguide. An insulating layer is disposed between the first and second semiconductor material layers such that there is an evanescent coupling between the first and second semiconductor material layers. There are modulated charge layers proximate to the insulating layer such that a coupling length of the evanescent coupling is controlled in response to the modulated charge layers.
    • 公开了一种在半导体管芯的多层之间进行光切换的器件。 在本发明的一个方面,所公开的装置包括半导体管芯的第一半导体材料层。 第一半导体材料层具有第一光波导。 第二半导体材料层也包括在半导体管芯中。 第二半导体材料层具有第二光波导。 绝缘层设置在第一和第二半导体材料层之间,使得在第一和第二半导体材料层之间存在ev逝耦合。 存在靠近绝缘层的调制电荷层,使得响应于调制的电荷层来控制ev逝耦合的耦合长度。
    • 9. 发明授权
    • Method and apparatus for semiconductor-based integrated polarization modulator/compensator
    • 基于半导体的集成偏振调制器/补偿器的方法和装置
    • US06751002B2
    • 2004-06-15
    • US10140443
    • 2002-05-06
    • Shlomo OvadiaAnsheng LiuRemus Nicolaescu
    • Shlomo OvadiaAnsheng LiuRemus Nicolaescu
    • G02F103
    • G02B6/12007G02B6/2706G02B6/274G02B6/2766G02B6/278G02B6/29355G02B2006/12097G02B2006/12107G02F1/0136H04B10/532
    • An optical polarization modulator (OPM) for use in an optical communication system includes two polarizing beam splitters (PBSs) and an adjusting stage coupled between the PBSs. One PBS receives an input optical signal with an arbitrary state of polarization (SOP) and splits it into its TE and TM components. The adjusting stage can change the amplitude and/or relative phase between the TE and TM components to help achieve a desired state of polarization (SOP). The ACS and PCS may include MZIs to both adjust the amplitude and the relative phase difference between the TE and TM components. Alternatively, the OPM may include an amplifier and a phase shifter for each component. The second PBS combines the adjusted components to form the output signal with a desired SOP. Another embodiment of the OPM includes an Y-junction coupler, two plasma optical-effect silicon phase shifter stages, a 2×2 3-dB coupler and a PBS. The Y-junction coupler splits the incoming optical signal into two equal portions (containing TM and TE components). The first stage adjusts the relative phase between the portions. The 2×2 3-dB coupler allows the phase adjusted portions to interact to adjust the amplitude. The second stage adjusts the phase difference between the two portions for TE and TM components and outputs the adjusted portions to the PBS via polarization maintaining fibers. The PBS then combines the TE component of one portion with the TM component of the other portion to form an output signal with the desired SOP.
    • 用于光通信系统的光偏振调制器(OPM)包括两个偏振分束器(PBS)和耦合在PBS之间的调节级。 一个PBS接收具有任意偏振状态(SOP)的输入光信号,并将其分解成其TE和TM分量。 调整阶段可以改变TE和TM分量之间的幅度和/或相对相位,以帮助实现期望的极化状态(SOP)。 ACS和PCS可以包括MZI来调节TE和TM组件之间的振幅和相对相位差。 或者,OPM可以包括用于每个组件的放大器和移相器。 第二PBS组合调整后的组件以形成具有所需SOP的输出信号。 OPM的另一实施例包括Y结耦合器,两个等离子体光效硅移相器级,2x2 3-dB耦合器和PBS。 Y结耦合器将输入的光信号分成两个相等的部分(包含TM和TE组件)。 第一阶段调整部分之间的相对相位。 2x2 3 dB耦合器允许相位调整的部分相互作用以调整振幅。 第二级调节TE和TM分量的两部分之间的相位差,并通过偏振保持光纤将调整后的部分输出到PBS。 然后,PBS将一部分的TE分量与另一部分的TM分量组合以形成具有所需SOP的输出信号。
    • 10. 发明申请
    • Three dimensional semiconductor based optical switching device
    • 基于三维半导体的光开关器件
    • US20060083465A1
    • 2006-04-20
    • US10947633
    • 2004-09-22
    • Remus NicolaescuMario Paniccia
    • Remus NicolaescuMario Paniccia
    • G02B6/26H04B10/04H04B10/12
    • G02F1/025
    • A device with optical switching between multiple layers of a semiconductor die is disclosed. In one aspect of the present invention, the disclosed apparatus includes a first semiconductor material layer of a semiconductor die. The first semiconductor material layer has a first optical waveguide. A second semiconductor material layer is also included in the semiconductor die. The second semiconductor material layer has a second optical waveguide. An insulating layer is disposed between the first and second semiconductor material layers such that there is an evanescent coupling between the first and second semiconductor material layers. There are modulated charge layers proximate to the insulating layer such that a coupling length of the evanescent coupling is controlled in response to the modulated charge layers.
    • 公开了一种在半导体管芯的多层之间进行光切换的器件。 在本发明的一个方面,所公开的装置包括半导体管芯的第一半导体材料层。 第一半导体材料层具有第一光波导。 第二半导体材料层也包括在半导体管芯中。 第二半导体材料层具有第二光波导。 绝缘层设置在第一和第二半导体材料层之间,使得在第一和第二半导体材料层之间存在ev逝耦合。 存在靠近绝缘层的调制电荷层,使得响应于调制的电荷层来控制ev逝耦合的耦合长度。