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    • 3. 发明申请
    • Packaging of Micro Devices
    • 微器件封装
    • US20080145976A1
    • 2008-06-19
    • US11795865
    • 2006-01-24
    • Conor O'MahonyMartin Hill
    • Conor O'MahonyMartin Hill
    • H01L21/58
    • B81C1/00293B81C2203/0136B81C2203/0145
    • A silicon wafer is used as a substrate (1). A thin layer of metal is deposited and etched to form device metallisation (3), including electrodes and bondpads. A passivation layer (4) of silicon nitride is patterned to open access points to the metal. A lower sacrificial layer (5) is formed from polyimide and is patterned (at 5(a) and 5(b)) to open anchor regions for a device and for bridges that will define lateral etch channels for package evacuation. Structural materials that form a MEMS device (6) and bridges (13) are then deposited and patterned. The bridges (13) are patterned simultaneously with the device 6 on the lower sacrificial layer (5). An upper sacrificial layer (7) is then deposited over the device (6) and the lower sacrificial layer (5) and is patterned to open anchor regions (8) for an encapsulation layer (10). Both sacrificial layers are then simultaneously removed in an oxygen plasma ash through lateral etc channels (15). This step leaves a hollow and empty shell, inside which the MEMS device (6) is present. The device (6) is free to move after sacrificial layer removal and has clearance both above and below. The etch channels (15) are sealed by a sealant (40) applied over the encapsulant layer.
    • 硅晶片用作基板(1)。 沉积并蚀刻薄层金属以形成器件金属化(3),包括电极和粘结垫。 图案化氮化硅钝化层(4)以打开到金属的接入点。 下部牺牲层(5)由聚酰亚胺形成,并被图案化(在5(a)和5(b))处,以打开用于器件的锚定区域,以及将限定用于封装排空的横向蚀刻通道的桥。 然后,形成MEMS器件(6)和桥(13)的结构材料被沉积和图案化。 桥(13)与下牺牲层(5)上的装置6同时图案化。 然后将上牺牲层(7)沉积在器件(6)和下牺牲层(5)上,并被图案化以打开用于封装层(10)的锚定区域(8)。 然后通过侧面等通道(15)在氧等离子体灰中同时去除两个牺牲层。 该步骤留下空心的空壳,其中存在MEMS装置(6)。 器件(6)在除去牺牲层后自由移动,并具有上下两个间隙。 蚀刻通道(15)由施加在密封剂层上的密封剂(40)密封。