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    • 4. 发明申请
    • GROWING METAL NANOWIRES
    • 生长金属纳米线
    • US20110171379A1
    • 2011-07-14
    • US12684253
    • 2010-01-08
    • Xingcheng XiaoCurtis A. WongAnil K. Sachdev
    • Xingcheng XiaoCurtis A. WongAnil K. Sachdev
    • B05D3/02C23C14/34
    • H01B1/16B22F2998/00C30B23/00C30B29/02C30B29/60H01B1/02B22F2303/01B22F2301/30B22F1/0025
    • A method is disclosed for growing metal (including semiconductor metal) nanowires from a film deposited on a substrate. In an illustrative embodiment tin and silicon are co-deposited, such as by sputtering, on a silicon substrate at, for example, ambient temperature. The deposited tin and silicon do not mix and the film has a tin phase dispersed in a higher melting, lower coefficient of thermal expansion, silicon phase. Upon heating, the tin expands against the silicon and expels small tin wires from the upper surface of the film. Other metal or metal alloy wires may be formed in a like manner using a matrix material and substrate in film deposition that don't mix with the metal composition and, when heated, force the expanding metal to extrude from the film surface as small diameter wires.
    • 公开了从沉积在基板上的膜生长金属(包括半导体金属)纳米线的方法。 在说明性实施例中,例如通过溅射将例如锡和硅在例如环境温度的硅衬底上共沉积。 沉积的锡和硅不混合,并且膜具有分散在较高熔点,较低热膨胀系数,硅相中的锡相。 在加热时,锡膨胀抵靠硅并从薄膜的上表面排出小的锡线。 其他金属或金属合金线可以使用不与金属组合物混合的膜沉积中的基质材料和基材以类似的方式形成,并且当加热时,迫使膨胀金属从薄膜表面挤出为小直径丝 。