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1. 发明授权

US07425741B1 EEPROM structure with improved data retention utilizing biased metal plate and conductive layer exclusion 有权
标题翻译：具有利用偏置金属板和导电层排除的具有改进的数据保留的EEPROM结构
公开(公告)号：US07425741B1
公开(公告)日：2008-09-16
申请号：US11186442
申请日：2005-07-21
申请人： Andrew Strachan , Natalia Lavrovskaya , Saurabh Desai , Roozbeh Parsa , Yuri Mirgorodski
发明人： Andrew Strachan , Natalia Lavrovskaya , Saurabh Desai , Roozbeh Parsa , Yuri Mirgorodski
IPC分类号： H01L29/788
CPC分类号： H01L29/4234 , H01L21/28273 , H01L29/66825
摘要： A biased conductive plate is provided over an NVM cell structure to overcome data retention charge loss due to the presence of dielectric films that are conductive at higher temperatures. The biased conductive plate is preferably formed from the lowest metal layer in the fabrication process flow, but any biased conductive layer can be used.
摘要翻译：在NVM单元结构上提供偏置的导电板以克服由于在较高温度下导电的介电膜的存在而导致的数据保持电荷损失。偏置的导电板优选地由制造工艺流程中的最低金属层形成，但是可以使用任何偏置的导电层。

2. 发明授权

US07919805B1 Non-volatile memory cell with two capacitors and one PNP transistor and a method of forming such a cell in a 1-poly SOI technology 有权
标题翻译：具有两个电容器和一个PNP晶体管的非易失性存储器单元以及在1-poly SOI技术中形成这样的单元的方法
公开(公告)号：US07919805B1
公开(公告)日：2011-04-05
申请号：US11807322
申请日：2007-05-25
申请人： Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： H01L29/76
CPC分类号： H01L27/11558 , G11C16/0416 , G11C2216/04 , G11C2216/10 , H01L27/11519
摘要： In a non-volatile memory cell, a single poly SOI technology is used to save space and achieve low current programming by providing two capacitors formed in an n-material over an NBL, forming a inverter in an n-material over a PBL, and isolating the NBL from the PBL by means of a lightly doped region or a deep trench isolation region.
摘要翻译：在非易失性存储单元中，使用单个多晶硅技术来节省空间并通过在NBL上形成在n材料中形成的两个电容器来形成低电流编程，从而在PBL上形成n材料中的逆变器，以及通过轻掺杂区域或深沟槽隔离区域将PBL与PBL隔离。

3. 发明授权

US08183621B2 Non-volatile memory cell having a heating element and a substrate-based control gate 有权
标题翻译：具有加热元件和基于基板的控制栅极的非易失性存储单元
公开(公告)号：US08183621B2
公开(公告)日：2012-05-22
申请号：US13037199
申请日：2011-02-28
申请人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11558 , H01L29/66825 , H01L29/7841 , H01L29/7881
摘要： The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
摘要翻译：可以通过利用局部加热元件来使得非易失性存储器（NVM）被编程和擦除的次数大大增加，所述局部加热元件在NVM被编程和擦除时使隧道电荷载体损坏的氧化物退火。在编程和擦除之前，加热元件的热量时，编程和擦除电压也会降低。

4. 发明授权

US08669157B2 Non-volatile memory cell having a heating element and a substrate-based control gate 有权
标题翻译：具有加热元件和基于基板的控制栅极的非易失性存储单元
公开(公告)号：US08669157B2
公开(公告)日：2014-03-11
申请号：US13477019
申请日：2012-05-21
申请人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11558 , H01L29/66825 , H01L29/7841 , H01L29/7881
摘要： The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
摘要翻译：可以通过利用局部加热元件来使得非易失性存储器（NVM）被编程和擦除的次数大大增加，所述局部加热元件在NVM被编程和擦除时使隧道电荷载体损坏的氧化物退火。在编程和擦除之前，加热元件的热量时，编程和擦除电压也会降低。

5. 发明授权

US07919807B1 Non-volatile memory cell with heating element 有权
标题翻译：带加热元件的非易失性存储单元
公开(公告)号：US07919807B1
公开(公告)日：2011-04-05
申请号：US11729710
申请日：2007-03-29
申请人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11558 , H01L29/66825 , H01L29/7841 , H01L29/7881
摘要： The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
摘要翻译：可以通过利用局部加热元件来使得非易失性存储器（NVM）被编程和擦除的次数大大增加，所述局部加热元件在NVM被编程和擦除时使隧道电荷载体损坏的氧化物退火。在编程和擦除之前，加热元件的热量时，编程和擦除电压也会降低。

6. 发明申请

US20120230118A1 NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-BASED CONTROL GATE 有权
标题翻译：具有加热元件和基于底物的控制门的非易失性存储单元
公开(公告)号：US20120230118A1
公开(公告)日：2012-09-13
申请号：US13477019
申请日：2012-05-21
申请人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： G11C16/10
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11558 , H01L29/66825 , H01L29/7841 , H01L29/7881
摘要： The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
摘要翻译：可以通过利用局部加热元件来使得非易失性存储器（NVM）被编程和擦除的次数大大增加，所述局部加热元件在NVM被编程和擦除时使隧道电荷载体损坏的氧化物退火。在编程和擦除之前，加热元件的热量时，编程和擦除电压也会降低。

7. 发明授权

US07719048B1 Heating element for enhanced E2PROM 有权
标题翻译：加热元件，用于增强E2PROM
公开(公告)号：US07719048B1
公开(公告)日：2010-05-18
申请号：US11796050
申请日：2007-04-26
申请人： Jeff A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeff A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： H01L21/336
CPC分类号： H01L27/11519 , H01L27/11521 , H01L27/11558
摘要： A heating element is utilized to improve the bias conditions of an E2PROM cell during program and erase operations. The heating element can also be used to anneal or condition the cell for improved charge storage. During a program or an erase operation, the cell's control gate and read transistor are set to ground. The heating element then has a voltage potential applied across its terminals, causing current to flow in this resistor. As the current density increases, the resistor begins to generate heat. This heat is thermally coupled into the cell's floating gate, causing its temperature to rise.
摘要翻译：在编程和擦除操作期间，使用加热元件来改善E2PROM单元的偏置条件。加热元件也可用于退火或调节电池以改善电荷储存。在编程或擦除操作期间，单元的控制栅极和读取晶体管被设置为接地。然后，加热元件具有施加在其端子两端的电压电位，从而使电流在该电阻器中流动。随着电流密度的增加，电阻开始产生热量。该热量热耦合到电池的浮动栅极中，导致其温度升高。

8. 发明授权

US08247862B2 Method of enhancing charge storage in an E2PROM cell 有权
标题翻译：增强E2PROM电池电荷储存的方法
公开(公告)号：US08247862B2
公开(公告)日：2012-08-21
申请号：US12716101
申请日：2010-03-02
申请人： Jeff A Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeff A Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： G11C16/04
CPC分类号： H01L27/11519 , H01L27/11521 , H01L27/11558
摘要： A method is provided for enhancing charge storage in an E2PROM cell structure that includes a read transistor having spaced apart source an drain diffusion regions formed in a semiconductor substrate to define a substrate channel region therebetween, a conductive charge storage element formed over the substrate channel region and separated therefrom by gate dielectric material, a conductive control gate that is separated from the charge storage element by intervening dielectric material, and a conductive heating element disposed in proximity to the charge storage element. The method comprises performing a programming operation that causes charge to be placed on the charge storage element and, during the programming operation, heating the heating element to a temperature such that heat is provided to the charge storage element.
摘要翻译：提供了一种用于增强E2PROM单元结构中的电荷存储的方法，该E2PROM单元结构包括具有间隔开的源的读取晶体管，形成在半导体衬底中的漏极扩散区，以限定它们之间的衬底沟道区;形成在衬底沟道区上的导电电荷存储元件并通过栅极电介质材料分离，通过介电材料与电荷存储元件分离的导电控制栅极和设置在电荷存储元件附近的导电加热元件。该方法包括执行将电荷放置在电荷存储元件上的编程操作，并且在编程操作期间，将加热元件加热到使得向电荷存储元件提供热量的温度。

9. 发明申请

US20110147820A1 Non-Volatile Memory Cell Having a Heating Element and a Substrate-Based Control Gate 有权
标题翻译：具有加热元件和基于基板的控制栅极的非易失性存储单元
公开(公告)号：US20110147820A1
公开(公告)日：2011-06-23
申请号：US13037199
申请日：2011-02-28
申请人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeffrey A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11558 , H01L29/66825 , H01L29/7841 , H01L29/7881
摘要： The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.
摘要翻译：可以通过利用局部加热元件来使得非易失性存储器（NVM）被编程和擦除的次数大大增加，所述局部加热元件在NVM被编程和擦除时使隧道电荷载体损坏的氧化物退火。在编程和擦除之前，加热元件的热量时，编程和擦除电压也会降低。

10. 发明申请

US20100157682A1 METHOD OF ENHANCING CHARGE STORAGE IN AN E2PROM CELL 有权
标题翻译：在E2PROM细胞中增加电荷储存的方法
公开(公告)号：US20100157682A1
公开(公告)日：2010-06-24
申请号：US12716101
申请日：2010-03-02
申请人： Jeff A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
发明人： Jeff A. Babcock , Yuri Mirgorodski , Natalia Lavrovskaya , Saurabh Desai
IPC分类号： G11C16/04
CPC分类号： H01L27/11519 , H01L27/11521 , H01L27/11558
摘要： A method is provided for enhancing charge storage in an E2PROM cell structure that includes a read transistor having spaced apart source an drain diffusion regions formed in a semiconductor substrate to define a substrate channel region therebetween, a conductive charge storage element formed over the substrate channel region and separated therefrom by gate dielectric material, a conductive control gate that is separated from the charge storage element by intervening dielectric material, and a conductive heating element disposed in proximity to the charge storage element. The method comprises performing a programming operation that causes charge to be placed on the charge storage element and, during the programming operation, heating the heating element to a temperature such that heat is provided to the charge storage element.
摘要翻译：提供了一种用于增强E2PROM单元结构中的电荷存储的方法，该E2PROM单元结构包括具有间隔开的源的读取晶体管，形成在半导体衬底中的漏极扩散区，以限定它们之间的衬底沟道区;形成在衬底沟道区上的导电电荷存储元件并通过栅极电介质材料分离，通过介电材料与电荷存储元件分离的导电控制栅极和设置在电荷存储元件附近的导电加热元件。该方法包括执行将电荷放置在电荷存储元件上的编程操作，并且在编程操作期间，将加热元件加热到使得向电荷存储元件提供热量的温度。

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