会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG
    • 相对于沉积的氧化物,热生长的氧化物和氮化物中的至少一种选择性蚀刻多晶硅的方法以及相对于BPSG选择性蚀刻多晶硅的方法
    • US06306775B1
    • 2001-10-23
    • US09599143
    • 2000-06-21
    • Andrew Li
    • Andrew Li
    • H01L2100
    • H01L21/32134
    • The invention includes methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG. In one implementation, a method of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, includes forming a substrate to have a layer comprising polysilicon received over at least one layer comprising at least one of deposited oxide, thermally grown oxide, and nitride. The polysilicon is exposed to an aqueous solution comprising NH4F, an oxidizer, CH3COOH, TMAH, and HF under conditions effective to selectively etch at least a portion of the polysilicon comprising layer relative to an ultimately exposed portion of the at least one of deposited oxide, thermally grown oxide, and nitride. In one implementation, the polysilicon is exposed to an aqueous solution comprising NH4F, an oxidizer, CH3COOH, and TMAF under conditions effective to selectively etch at least a portion of the polysilicon comprising layer relative to an ultimately exposed portion of the at least one of deposited oxide, thermally grown oxide, and nitride.
    • 本发明包括相对于沉积的氧化物,热生长的氧化物和氮化物中的至少一种选择性地蚀刻多晶硅的方法,以及相对于BPSG选择性蚀刻多晶硅的方法。 在一个实施方案中,相对于沉积的氧化物,热生长的氧化物和氮化物中的至少一种选择性地蚀刻多晶硅的方法包括形成衬底以使包含多晶硅的层被包含在至少一层上,所述层至少包括沉积氧化物,热 生长的氧化物和氮化物。 在有效选择性地蚀刻包含多晶硅的层的至少一部分相对于沉积的氧化物中的至少一种的最终暴露部分的条件下,将多晶硅暴露于包含NH 4 F,氧化剂,CH 3 COOH,TMAH和HF的水溶液中, 热生长氧化物和氮化物。 在一个实施方案中,多晶硅暴露于包含NH 4 F,氧化剂,CH 3 COOH和TMAF的水溶液中,所述条件有效地相对于所沉积的至少一种沉积物的最终暴露部分选择性地蚀刻多晶硅包含层的至少一部分 氧化物,热生长氧化物和氮化物。