专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070181057A1 Epitaxial deposition process and apparatus 失效
标题翻译：外延沉积工艺和设备
公开(公告)号：US20070181057A1
公开(公告)日：2007-08-09
申请号：US11346804
申请日：2006-02-03
申请人： Andrew Lam , Yihwan Kim , Satheesh Kuppurao , See-Eng Phan , Xinliang Lu , Chien-Teh Kao
发明人： Andrew Lam , Yihwan Kim , Satheesh Kuppurao , See-Eng Phan , Xinliang Lu , Chien-Teh Kao
IPC分类号： C30B23/00 , C23C16/00 , C30B25/00 , C30B28/14
CPC分类号： C23C16/452 , C23C16/0236 , C23C16/505 , H01L21/31116 , H01L21/67069
摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
摘要翻译：公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。反应气体进入处理室并与基板反应，形成薄膜。将衬底加热以蒸发薄膜并暴露外延表面。外延表面基本上不含氧化物。然后使用外延沉积在外延表面上形成外延层。

2. 发明授权

US07494545B2 Epitaxial deposition process and apparatus 失效
标题翻译：外延沉积工艺和设备
公开(公告)号：US07494545B2
公开(公告)日：2009-02-24
申请号：US11346804
申请日：2006-02-03
申请人： Andrew Lam , Yihwan Kim , Satheesh Kuppurao , See-Eng Phan , Xinliang Lu , Chien-Teh Kao
发明人： Andrew Lam , Yihwan Kim , Satheesh Kuppurao , See-Eng Phan , Xinliang Lu , Chien-Teh Kao
IPC分类号： C30B25/12
CPC分类号： C23C16/452 , C23C16/0236 , C23C16/505 , H01L21/31116 , H01L21/67069
摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
摘要翻译：公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。反应气体进入处理室并与基板反应，形成薄膜。将衬底加热以蒸发薄膜并暴露外延表面。外延表面基本上不含氧化物。然后使用外延沉积在外延表面上形成外延层。

3. 发明授权

US07718225B2 Method to control semiconductor film deposition characteristics 有权
标题翻译：控制半导体膜沉积特性的方法
公开(公告)号：US07718225B2
公开(公告)日：2010-05-18
申请号：US11205647
申请日：2005-08-17
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法。腔表面的多于一部分可以被温度调节，并且可以通过在成膜过程中将反应室的第一壁的温度高于第二壁的温度来实现。

4. 发明授权

US08991332B2 Apparatus to control semiconductor film deposition characteristics 有权
标题翻译：控制半导体膜沉积特性的装置
公开(公告)号：US08991332B2
公开(公告)日：2015-03-31
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/46 , C23C16/52 , C23C16/44 , H01L21/67
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。腔表面的多于一个部分可以进行温度调制。

5. 发明申请

US20090211523A1 Apparatus to Control Semiconductor Film Deposition Characteristics 有权
标题翻译：控制半导体膜沉积特性的装置
公开(公告)号：US20090211523A1
公开(公告)日：2009-08-27
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： B05C11/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。腔表面的多于一个部分可以进行温度调制。

6. 发明申请

US20070042117A1 Method and apparatus to control semiconductor film deposition characteristics 有权
标题翻译：控制半导体膜沉积特性的方法和装置
公开(公告)号：US20070042117A1
公开(公告)日：2007-02-22
申请号：US11205647
申请日：2005-08-17
申请人： Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法，系统和装置。腔表面的多于一个部分可以进行温度调制。

7. 发明授权

US09064960B2 Selective epitaxy process control 有权
标题翻译：选择性外延过程控制
公开(公告)号：US09064960B2
公开(公告)日：2015-06-23
申请号：US11669550
申请日：2007-01-31
申请人： Andrew Lam , Yihwan Kim
发明人： Andrew Lam , Yihwan Kim
IPC分类号： C30B25/04 , H01L29/78 , C30B23/04 , H01L21/02 , H01L29/165 , H01L29/66 , C30B35/00 , H01L21/8238
CPC分类号： H01L29/7834 , C30B23/04 , C30B25/04 , C30B35/00 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： Methods of selectively and epitaxially forming a silicon-containing material on a substrate surface contained within a process chamber are provided. In one or more embodiments, the pressure in the process chamber is reduced during deposition of material on the substrate and increased during etching of material from the substrate. According to an embodiment, process gases are flowed into the chamber through first zone and a second zone to provide a ratio of the amount of gas flowed to the first zone and the amount of gas flowed to the second zone. In one or more embodiments, the first zone is an inner radial zone and the second zone is an outer radial zone, and ratio of inner zone gas flow to outer zone gas flow is less during deposition than during etching. According to one or more embodiments, the selective epitaxial process includes repeating a cycle of a deposition and then an etching process, and an optional purge until the desired thickness of an epitaxial layer is grown.
摘要翻译：提供在处理室内包含的衬底表面上选择性地和外延地形成含硅材料的方法。在一个或多个实施例中，在材料沉积在衬底上时，处理室中的压力降低，并且在从衬底蚀刻材料期间增加。根据实施例，工艺气体通过第一区域和第二区域流入腔室，以提供流入第一区域的气体量与流向第二区域的气体的量的比率。在一个或多个实施例中，第一区域是内部径向区域，第二区域是外部径向区域，并且内部区域气体流与外部区域气体流量的比例在沉积期间比在蚀刻期间更小。根据一个或多个实施例，选择性外延工艺包括重复沉积周期，然后重复蚀刻工艺，以及任选的清洗直到生长外延层的期望厚度。

8. 发明申请

US20080026549A1 METHODS OF CONTROLLING MORPHOLOGY DURING EPITAXIAL LAYER FORMATION 有权
标题翻译：在外延层形成过程中控制形态的方法
公开(公告)号：US20080026549A1
公开(公告)日：2008-01-31
申请号：US11830830
申请日：2007-07-30
申请人： Yihwan Kim , Andrew Lam
发明人： Yihwan Kim , Andrew Lam
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , C30B25/02 , C30B29/06 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02661
摘要： A first aspect of the invention provides a method of selectively forming an epitaxial layer on a substrate. The method includes heating the substrate to a temperature of less than about 800° C. and employing both silane and dichlorosilane as silicon sources during epitaxial film formation. Numerous other aspects are provided.
摘要翻译：本发明的第一方面提供了一种在衬底上选择性地形成外延层的方法。该方法包括在外延膜形成期间将基板加热至低于约800℃的温度，同时采用硅烷和二氯硅烷作为硅源。提供了许多其他方面。

9. 发明授权

US07772074B2 Method of forming conformal silicon layer for recessed source-drain 有权
标题翻译：形成用于凹陷源极漏极的保形硅层的方法
公开(公告)号：US07772074B2
公开(公告)日：2010-08-10
申请号：US11874336
申请日：2007-10-18
申请人： Zhiyuan Ye , Andrew Lam , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Andrew Lam , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02667 , H01L29/165 , H01L29/66628 , H01L29/66636
摘要： Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth.
摘要翻译：公开了在凹陷角上非选择性地形成一个或多个适形的含硅外延层的工艺。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施方案中，非选择性外延层的形成包括将处理室中的衬底暴露于包括诸如硅烷和高级硅烷的硅源的沉积气体，然后加热衬底以促进固相外延生长。

10. 发明申请

US20090104739A1 METHOD OF FORMING CONFORMAL SILICON LAYER FOR RECESSED SOURCE-DRAIN 有权
标题翻译：形成连续硅层的方法
公开(公告)号：US20090104739A1
公开(公告)日：2009-04-23
申请号：US11874336
申请日：2007-10-18
申请人： Zhiyuan Ye , Andrew Lam , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Andrew Lam , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L29/7848 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02667 , H01L29/165 , H01L29/66628 , H01L29/66636
摘要： Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth.
摘要翻译：公开了在凹陷角上非选择性地形成一个或多个适形的含硅外延层的工艺。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施方案中，非选择性外延层的形成包括将处理室中的衬底暴露于包括诸如硅烷和高级硅烷的硅源的沉积气体，然后加热衬底以促进固相外延生长。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式