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1. 发明授权

US06083451A Method of producing a polycrystalline alumina ceramic which is resistant to a fluorine-comprising plasma 失效
标题翻译：制造耐含氟等离子体的多晶氧化铝陶瓷的方法
公开(公告)号：US06083451A
公开(公告)日：2000-07-04
申请号：US424772
申请日：1995-04-18
申请人： Anand Gupta , Tirunelveli S. Ravi
发明人： Anand Gupta , Tirunelveli S. Ravi
IPC分类号： F16J12/00 , C04B35/10 , C04B35/111 , C23C16/44 , H01L21/3065 , B32B1/00
CPC分类号： C04B35/111 , C23C16/44
摘要： A polycrystalline alumina ceramic material which is resistant to a fluorine-comprising plasma is produced by forming a green body including alumina and a binder, and sintering the green body at a temperature ranging from about 1400.degree. C. to about 1700.degree. C. for a time from about 8 to about 12 hours. The area % of unsintered particles in the polycrystalline alumina ceramic material does not exceed 0.1 area %, resulting in reduced emission of particles from the material after exposure to plasma fluorine.
摘要翻译：通过形成包括氧化铝和粘合剂的生坯，并在约1400℃至约1700℃的温度范围内烧结生坯，生产耐氟含量等离子体的多晶氧化铝陶瓷材料时间约8至12小时。多晶氧化铝陶瓷材料中未烧结颗粒的面积百分比不超过0.1面积％，导致暴露于等离子体氟之后颗粒从材料中的排放减少。

2. 发明授权

US06638886B1 Plasma fluorine resistant alumina ceramic material and method of making 失效
标题翻译：等离子体耐氟氧化铝陶瓷材料及其制造方法
公开(公告)号：US06638886B1
公开(公告)日：2003-10-28
申请号：US09200421
申请日：1998-11-23
申请人： Anand Gupta , Tirunelveli S. Ravi
发明人： Anand Gupta , Tirunelveli S. Ravi
IPC分类号： C04B3510
CPC分类号： C04B35/111 , C23C16/44
摘要： A plasma fluorine resistant polycrystalline alumina ceramic material is produced by forming a green body including alumina and a binder, and sintering the green body for a time from about 8 to 12 hours. The area % of unsintered particles in the polycrystalline alumina ceramic material does not exceed 0.1 area %, resulting in reduced emission of particles from the material after exposure to plasma fluorine.
摘要翻译：等离子体耐氟多晶氧化铝陶瓷材料通过形成包括氧化铝和粘合剂的生坯，并将生坯烧结约8至12小时来生产。多晶氧化铝陶瓷材料中未烧结颗粒的面积百分比不超过0.1面积％，导致暴露于等离子体氟之后颗粒从材料中的排放减少。

3. 发明申请

US20080210302A1 Methods and apparatus for forming photovoltaic cells using electrospray 有权
标题翻译：使用电喷雾形成光伏电池的方法和装置
公开(公告)号：US20080210302A1
公开(公告)日：2008-09-04
申请号：US11953758
申请日：2007-12-10
申请人： Anand Gupta
发明人： Anand Gupta
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/18 , C23C18/1208 , H01G9/20 , H01G9/2027 , H01G9/2031 , H01G9/2036 , H01G9/2054 , H01G9/2059 , H01G9/2063 , H01G9/2068 , H01L27/304 , H01L31/0384 , Y02E10/50 , Y02E10/542 , Y02P70/521
摘要： Methods of forming a photovoltaic structures including nanoparticles are disclosed. The method includes electrospray deposition of nanoparticles. The nanoparticles can include TiO2 nanoparticles and quantum dots. In an example, the nanoparticles are formed on a flexible substrate. In various examples, the flexible substrate is light transparent. Photovoltaic structures and apparatus for forming photovoltaic structures are disclosed.
摘要翻译：公开了形成包括纳米颗粒的光伏结构的方法。该方法包括纳米颗粒的电喷雾沉积。纳米颗粒可以包括TiO 2纳米颗粒和量子点。在一个实例中，纳米颗粒形成在柔性基底上。在各种示例中，柔性基板是透光的。公开了用于形成光伏结构的光伏结构和装置。

4. 发明授权

US06465043B1 Method and apparatus for reducing particle contamination in a substrate processing chamber 失效
标题翻译：用于减少基板处理室中的颗粒污染的方法和装置
公开(公告)号：US06465043B1
公开(公告)日：2002-10-15
申请号：US08599230
申请日：1996-02-09
申请人： Anand Gupta
发明人： Anand Gupta
IPC分类号： C23C1600
CPC分类号： C23C16/402 , C23C16/4401 , H01J37/32862 , H01J2237/022 , Y10S438/905
摘要： A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.
摘要翻译：一种用于在沉积具有至少两层的膜的过程中减少衬底处理室中的颗粒污染的方法和装置。本发明的方法包括以下步骤：将第一工艺气体引入室中以在第一选定压力下在晶片上沉积薄膜的第一层，将第二工艺气体引入室中以沉积第二层在晶片之间以及在所述第一和第二层的沉积之间，在室内的压力保持足够高的压力，使得通过引入第二工艺而移动的颗粒不会影响晶片。

5. 发明授权

US06374770B1 Apparatus for improving film stability of halogen-doped silicon oxide films 失效
标题翻译：用于提高卤素掺杂氧化硅膜的膜稳定性的装置
公开(公告)号：US06374770B1
公开(公告)日：2002-04-23
申请号：US09597856
申请日：2000-06-20
申请人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
发明人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
IPC分类号： C23C1600
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31629
摘要： A chemical vapor deposition system that includes a housing configured to form a processing chamber, a substrate holder configured to hold a substrate within the processing chamber, a gas distribution system configured to introduce gases into the processing chamber, a plasma generation system configured to form a plasma within the processing chamber, a processor operatively coupled to control the gas distribution system and the plasma generation system, and a computer-readable memory coupled to the processor that stores a computer-readable program which directs the operation of the chemical vapor deposition system. In one embodiment the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on a substrate positioned on the substrate holder and instructions that control the gas distribution system and plasma generation system to densify the halogen-doped silicon oxide film by bombarding the film with ionic species from a plasma of an argon-containing gas source. In another embodiment, the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on said substrate and instructions that control the gas distribution system and plasma generation system to form a plasma from a hydrogen containing source gas to bombard the halogen-doped silicon oxide film with hydrogen ions to remove loosely bound halogen atoms from the film.
摘要翻译：一种化学气相沉积系统，其包括构造成形成处理室的壳体，被配置为在处理室内保持衬底的衬底保持器，配置成将气体引入到处理室中的气体分配系统;等离子体生成系统，处理室内的等离子体，可操作地耦合以控制气体分配系统和等离子体生成系统的处理器以及耦合到处理器的计算机可读存储器，其存储引导化学气相沉积系统的操作的计算机可读程序。在一个实施例中，计算机可读程序包括控制气体分配系统以将包含硅，氧和卤素族成员的工艺气体流入室中的指令，以将沉积卤素掺杂的氧化硅膜沉积在位于衬底保持器以及控制气体分配系统和等离子体发生系统通过用来自含氩气体源的等离子体的离子物质轰击膜来致密化掺杂氧化硅膜的指令。在另一个实施例中，计算机可读程序包括控制气体分配系统以使包含硅，氧和卤素族成员的工艺气体流入腔室中以在所述衬底上沉积卤素掺杂的氧化硅膜的指令，以及控制气体分配系统和等离子体发生系统，以形成来自含氢源气体的等离子体，用氢离子轰击卤素掺杂的氧化硅膜，以从薄膜中去除松散结合的卤素原子。

6. 发明授权

US06223685B1 Film to tie up loose fluorine in the chamber after a clean process 有权
标题翻译：在清洁过程之后，电影将室内的松散的氟结合起来
公开(公告)号：US06223685B1
公开(公告)日：2001-05-01
申请号：US09452551
申请日：1999-12-01
申请人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C1600
CPC分类号： C23C14/564 , C23C16/4404 , C23C16/5096 , C23C16/52 , H01J37/32477 , H01J37/32862 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.
摘要翻译：一种降低在衬底处理室内沉积的膜中吸收的污染物（例如氟）的水平的改进方法。在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。沉积的调味剂层比现有技术的调味料层更稳定，因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。在优选实施例中，调味层由混合频率PECVD工艺形成，其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键，而不是不稳定的SiF 2或其它键。当剩余的氟原子（例如在室壁内吸收的氟原子）被并入沉积的调味层中时，与现有技术的氧化硅调味层相比，较少的松散键合的氟原子被掺入到该层中。在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。

7. 发明授权

US6090167A Method and apparatus for improving film stability of halogen-doped silicon oxide films 有权
标题翻译：用于提高卤素掺杂氧化硅膜的膜稳定性的方法和装置
公开(公告)号：US6090167A
公开(公告)日：2000-07-18
申请号：US413282
申请日：1999-10-06
申请人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
发明人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316 , C23C16/00
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02274 , H01L21/31629 , Y10T29/41
摘要： A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.
摘要翻译：一种改善卤素掺杂氧化硅层的膜稳定性的方法和装置。该方法包括与包括硅，氧和卤素元素的工艺气体一起引入氦的步骤。以增加的速率引入氦以稳定沉积层。在优选实施例中，卤素掺杂膜是氟硅酸盐玻璃膜，TEOS用作工艺气体中的硅源。在另一优选实施方案中，使用SiF 4作为FSG膜的氟源。

8. 发明授权

US6083569A Discharging a wafer after a plasma process for dielectric deposition 失效
标题翻译：在用于介电沉积的等离子体处理之后放电晶片
公开(公告)号：US6083569A
公开(公告)日：2000-07-04
申请号：US738407
申请日：1996-10-25
申请人： Anand Gupta , Majid K. Shahreza
发明人： Anand Gupta , Majid K. Shahreza
IPC分类号： C23C16/56 , H01L21/316 , B05D3/14 , B05D3/04 , H01L21/3105
CPC分类号： H01L21/02164 , C23C16/56 , H01L21/02274 , H01L21/31612 , H01J2237/0041 , H01J2237/32
摘要： A method and apparatus for neutralizing a wafer in a plasma reactor following a deposition process which charges the wafer and hinders removal of the wafer from the plasma reactor. The wafer is exposed to a plasma of a noble gas such as helium to energize the reaction zone. Then a sufficient amount of an inert electronegative gas such as oxygen to neutralize the wafer is introduced into the plasma reactor in the absence of RF power or other gases. The neutralized wafer is readily removed from the plasma chamber.
摘要翻译：一种在对晶片充电并阻止晶片从等离子体反应器中移除的沉积工艺之后中和等离子体反应器中的晶片的方法和装置。将晶片暴露于诸如氦气的惰性气体的等离子体，以激励反应区。然后在不存在RF功率或其它气体的情况下，将足够量的惰性电负性气体如氧气中和晶片引入等离子体反应器。中和的晶片容易从等离子体室移除。

9. 发明授权

US5810937A Using ceramic wafer to protect susceptor during cleaning of a processing chamber 失效
标题翻译：在清洁处理室时使用陶瓷晶片来保护基座
公开(公告)号：US5810937A
公开(公告)日：1998-09-22
申请号：US614594
申请日：1996-03-13
申请人： Anand Gupta , Srihari Ponnekanti , Gana A. Rimple , Laxman Murugesh
发明人： Anand Gupta , Srihari Ponnekanti , Gana A. Rimple , Laxman Murugesh
IPC分类号： H01L21/683 , B08B7/00 , C23C16/44 , H01J37/32 , H01L21/205 , B08B3/12 , B08B7/02 , B44C1/22 , C03C25/06
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405
摘要： A method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic wafer onto the susceptor before introducing the cleaning agent into the chamber is provided. In particular, the ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of a plasma to spread the plasma away from the susceptor during a cleaning operation, directing more of the plasma towards the walls of the chamber.
摘要翻译：提供一种用于在清洁操作期间通过在将清洁剂引入室内之前将陶瓷晶片装载到基座上来保护感受器的方法和装置。特别地，陶瓷晶片被选择为具有足以改变等离子体的电磁场的介电值，以在清洁操作期间将等离子体远离基座传播，从而将更多的等离子体引导到腔室的壁。

10. 发明授权

US5779807A Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers 失效
标题翻译：用于从等离子体处理室中的半导体衬底去除微粒的方法和装置
公开(公告)号：US5779807A
公开(公告)日：1998-07-14
申请号：US740407
申请日：1996-10-29
申请人： Charles Dornfest , Anand Gupta , Gerald Girard
发明人： Charles Dornfest , Anand Gupta , Gerald Girard
IPC分类号： B08B6/00 , B08B7/00 , C23C16/44 , H01J37/32 , H01L21/00 , B08B3/12 , B44C1/22
CPC分类号： H01L21/67028 , B08B6/00 , B08B7/0035 , C23C16/4401 , H01J37/32082 , H01J2237/022
摘要： An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.
摘要翻译：一种用于在诸如等离子体增强化学气相沉积（PECVD）室的等离子体处理室中从半导体晶片去除颗粒物质的静电技术。在微粒去除操作阶段期间，支撑晶片的正常接地电极暂时与地离开，并且偏置电压发生器同时连接到电极，提供足够的偏压以从晶片的表面静电发射微粒。在微粒去除阶段期间维持在正常接地电极上方形成的等离子体，并且从晶片发射的微粒悬浮在围绕等离子体的护套区域中，从那里可以通过气体的吹扫流将其去除。优选地，偏置电压发生器提供极性交替的偏置电压，以确保从晶片表面去除带正电荷和带负电荷的颗粒。

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