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1. 发明授权

US08058170B2 Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics 有权
标题翻译：沉积具有低电阻率和坚固的微粘附特性的薄钨膜的方法
公开(公告)号：US08058170B2
公开(公告)日：2011-11-15
申请号：US12407541
申请日：2009-03-19
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

2. 发明申请

US20100159694A1 METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS 有权
标题翻译：沉积具有低电阻率和稳定的微粘结特性的薄膜的方法
公开(公告)号：US20100159694A1
公开(公告)日：2010-06-24
申请号：US12407541
申请日：2009-03-19
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/285 , B05C11/00
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

3. 发明申请

US20120015518A1 METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS 有权
标题翻译：沉积具有低电阻率和稳定的微粘结特性的薄膜的方法
公开(公告)号：US20120015518A1
公开(公告)日：2012-01-19
申请号：US13244016
申请日：2011-09-23
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/283 , C23C16/455 , C23C16/52 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

4. 发明授权

US5528008A Pressure controlled activating switch for a hand held tool 失效
标题翻译：用于手持工具的压力控制启动开关
公开(公告)号：US5528008A
公开(公告)日：1996-06-18
申请号：US284758
申请日：1994-08-02
申请人： Michael Danek
发明人： Michael Danek
IPC分类号： H01H9/06 , G08C21/00 , H01H3/02
CPC分类号： H01H9/06
摘要： A pressure controlled activating switch for a hand held tool comprises an elongated flexible barrel having an axial support member carried within the barrel and protruding from one end thereof. A plurality of gliding elements surround the axial support member and are mounted in the barrel for axial movement with respect to the barrel axis. A plurality of inserting elements are carried between the gliding elements and are moveable radially in the barrel. A connecting element is provided axially moveable within the barrel and is operatively disposed to activate a switch element. A spring or magnet maintains the gliding elements in a resting position and positioned with respect to the connecting element so that radial movement inwardly of the flexible barrel causes radial movement of the inserting elements which in turn causes axial movement of the gliding elements and connecting element to activate the switch element.
摘要翻译：用于手持工具的压力控制启动开关包括细长的柔性筒，其具有承载在筒中并从其一端突出的轴向支撑构件。多个滑动元件围绕轴向支撑构件并且安装在筒体中，用于相对于筒体轴线的轴向运动。多个插入元件被承载在滑动元件之间并且可在枪管中径向移动。连接元件在筒体内可轴向移动并且可操作地设置成激活开关元件。弹簧或磁体将滑动元件保持在静止位置并相对于连接元件定位，使得柔性筒向内的径向移动引起插入元件的径向移动，这又导致滑动元件和连接元件的轴向移动到激活开关元件。

5. 发明申请

US20120149213A1 BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES 审中-公开
标题翻译：底部填充在高比例比例
公开(公告)号：US20120149213A1
公开(公告)日：2012-06-14
申请号：US13313735
申请日：2011-12-07
申请人： Lakshminarayana Nittala , Karena Shannon , Nerissa Draeger , Megha Rathod , Harald Te Nijenhuis , Bart Van Schravendijk , Michael Danek
发明人： Lakshminarayana Nittala , Karena Shannon , Nerissa Draeger , Megha Rathod , Harald Te Nijenhuis , Bart Van Schravendijk , Michael Danek
IPC分类号： H01L21/31 , C23C16/02 , C23C16/40
CPC分类号： C23C16/401 , C23C16/02 , C23C16/045 , H01L21/02211 , H01L21/02216 , H01L21/02219 , H01L21/02274 , H01L21/02315 , H01L21/02318 , H01L21/67207 , H01L21/76224
摘要： Provided are novel methods of filling gaps with a flowable dielectric material. According to various embodiments, the methods involve performing a surface treatment on the gap to enhance subsequent bottom up fill of the gap. In certain embodiments, the treatment involves exposing the surface to activated species, such as activated species of one or more of nitrogen, oxygen, and hydrogen. In certain embodiments, the treatment involves exposing the surface to a plasma generated from a mixture of nitrogen and oxygen. The treatment may enable uniform nucleation of the flowable dielectric film, reduce nucleation delay, increase deposition rate and enhance feature-to-feature fill height uniformity.
摘要翻译：提供了用可流动电介质材料填充间隙的新颖方法。根据各种实施例，所述方法包括在间隙上执行表面处理以增强间隙的随后的向上填充。在某些实施方案中，处理包括将表面暴露于活化物质，例如氮，氧和氢中的一种或多种的活化物质。在某些实施方案中，处理包括将表面暴露于由氮和氧的混合物产生的等离子体。该处理可以实现可流动电介质膜的均匀成核，减少成核延迟，增加沉积速率并增强特征 - 特征填充高度均匀性。

6. 发明授权

US6155198A Apparatus for constructing an oxidized film on a semiconductor wafer 失效
标题翻译：用于在半导体晶片上构造氧化膜的装置
公开(公告)号：US6155198A
公开(公告)日：2000-12-05
申请号：US677185
申请日：1996-07-09
申请人： Michael Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale DuBois , Alan F. Morrison
发明人： Michael Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale DuBois , Alan F. Morrison
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/509 , C23C16/56 , H01J37/32 , H01L21/285 , H01L21/768 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/34 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01L21/28512 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01J2237/2001 , H01J2237/336
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
摘要翻译：放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。当晶片处于处理室时，在晶片上形成一层材料。接下来，当晶片处于处理室时，材料层被氧化。用于原位实施这种结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和rf信号装置。淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

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