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    • 9. 发明申请
    • METHOD FOR MANUFACTURING A MEMORY DEVICE
    • 用于制造存储器件的方法
    • US20080096357A1
    • 2008-04-24
    • US11551535
    • 2006-10-20
    • Youseok SuhHidehiko ShiraiwaAllison HolbrookAngela HuiKuo-Tung Chang
    • Youseok SuhHidehiko ShiraiwaAllison HolbrookAngela HuiKuo-Tung Chang
    • H01L21/336
    • H01L27/115H01L27/11568
    • A method for manufacturing a memory device that includes using a gap-filling material that inhibits charge coupling between memory devices. A semiconductor material is provided that has an active region and an isolation region. A charge trapping structure is formed over the active region and a layer of semiconductor material is formed over the charge trapping structure and the isolation region. A masking structure having sidewalls is formed on the layer of semiconductor material. Spacers are formed adjacent the sidewalls and the layer of semiconductor material is etched to form one or more conductive strips having opposing sides. The one or more conductive strips are formed over the active region. A dielectric material is formed adjacent to the opposing sides of each conductive strip. The dielectric material serves as a gap-filling material. A layer of semiconductor material is formed over the one or more conductive strips.
    • 一种用于制造存储器件的方法,其包括使用禁止存储器件之间的电荷耦合的间隙填充材料。 提供了具有有源区和隔离区的半导体材料。 在有源区上形成电荷俘获结构,在电荷俘获结构和隔离区上形成一层半导体材料。 在半导体材料层上形成具有侧壁的掩模结构。 间隔件邻近侧壁形成,并且半导体材料层被蚀刻以形成具有相对侧面的一个或多个导电条。 一个或多个导电条形成在有源区上。 在每个导电带的相对侧附近形成电介质材料。 介电材料用作间隙填充材料。 在一个或多个导电条上形成半导体材料层。