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1. 发明授权

US07566897B2 Quantum interference device 失效
标题翻译：量子干扰装置
公开(公告)号：US07566897B2
公开(公告)日：2009-07-28
申请号：US11901549
申请日：2007-09-18
申请人： Amiran Bibilashvili , Avto Tavkhelidze
发明人： Amiran Bibilashvili , Avto Tavkhelidze
IPC分类号： H01L29/06
CPC分类号： H01L29/66977 , B82Y10/00 , Y10T428/12479
摘要： A quantum interference transistor comprising an source region for emitting electron waves into a vacuum, a drain region for collecting the electron waves, a repeating nanostructure in a region between the source and drain regions for introducing a constant phase shift between a plurality of electron waves, and a gate for controlling the phase shift introduced by the nanostructure; wherein the repeating nanostructure is characterized by having sharply defined geometric patterns or indents of a dimension that creates de Broglie wave interference.
摘要翻译：一种量子干涉晶体管，包括用于将电子波发射到真空中的源极区域，用于收集电子波的漏极区域，在源极和漏极区域之间的区域中的重复纳米结构，用于在多个电子波之间引入恒定的相移，以及用于控制由纳米结构引入的相移的栅极; 其中所述重复纳米结构的特征在于具有锐利定义的几何图案或创建德布罗意波干涉的尺寸的缩进。

2. 发明申请

US20080066797A1 Selective light absorbing semiconductor surface 有权
标题翻译：选择性光吸收半导体表面
公开(公告)号：US20080066797A1
公开(公告)日：2008-03-20
申请号：US11825558
申请日：2007-07-05
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Zara Taliashvili
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Zara Taliashvili
IPC分类号： H01L35/16
CPC分类号： H01L31/055 , H01L31/02363 , Y02E10/52
摘要： A selective light absorbing semiconductor surface is disclosed. Said semiconductor surface is characterized by the presence of indentations or protrusions comprising a grating of dimensions such as to enhance the absorption of selected frequencies of radiation. In a preferred embodiment of the present invention, said grating is formed on the surface of a doped semiconductor for the purposes of optical frequency down conversion. The semiconductor is doped so as to create energy levels within the forbidden zone between the conduction and valence bands. Incident radiation excites electrons from the valence to conduction band from where they decay to the meta-stable newly created energy level in the forbidden zone. From there, electrons return to the valence band, accompanied by the emission of radiation of lower frequency than that of the incident radiation. Optical frequency down-conversion is thus efficiently and rapidly accomplished. In a further embodiment of the present invention said grating is formed on the entrance and exit surfaces of one or more layers of a single or multi-junction solar cell. In this embodiment said grating is characterized by indents of depth λ/4 and width >λ, where λ is the wavelength of solar radiation incident on the layer under consideration.
摘要翻译：公开了选择性光吸收半导体表面。所述半导体表面的特征在于存在包括尺寸的光栅的凹陷或突起，以增强所选择的辐射频率的吸收。在本发明的优选实施例中，为了进行光频率下变换，所述光栅形成在掺杂半导体的表面上。半导体被掺杂以便在导电带和价带之间的禁区内产生能级。入射辐射激发电子从价态衰减到禁带的元稳定新创能量的价带到导带。从那里，电子返回价带，伴随着辐射频率低于入射辐射的辐射。因此，光频率下变换被有效且快速地实现。在本发明的另一实施例中，所述光栅形成在单结或多结太阳能电池的一层或多层的入射表面和出射表面上。在该实施例中，所述光栅的特征在于深度为λ/ 4和宽度>λ，其中λ是入射在所考虑的层上的太阳辐射的波长。

3. 发明申请

US20090121254A1 Method for Modification of Built In Potential of Diodes 有权
标题翻译：修改二极管内置电位的方法
公开(公告)号：US20090121254A1
公开(公告)日：2009-05-14
申请号：US11883011
申请日：2006-01-24
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney T. Cox
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney T. Cox
IPC分类号： H01L33/00
CPC分类号： H01L29/861 , H01L29/872 , H01L31/03529 , H01L33/24 , Y02E10/50
摘要： In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.
摘要翻译：在广义上，本发明是包括第一材料（102）和第二材料（104）的半导体结，其中一个或两个接合材料的表面具有周期性重复的结构，其导致电子波干扰，导致改变连接处电子能级的分布方式。

4. 发明授权

US08330192B2 Method for modification of built in potential of diodes 有权
标题翻译：修改二极管内置电位的方法
公开(公告)号：US08330192B2
公开(公告)日：2012-12-11
申请号：US11883011
申请日：2006-01-24
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney T. Cox
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney T. Cox
IPC分类号： H01L29/80
CPC分类号： H01L29/861 , H01L29/872 , H01L31/03529 , H01L33/24 , Y02E10/50
摘要： In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.
摘要翻译：在广义上，本发明是包括第一材料（102）和第二材料（104）的半导体结，其中一个或两个接合材料的表面具有周期性重复的结构，其导致电子波干扰，导致改变连接处电子能级的分布方式。

5. 发明授权

US06281139B1 Wafer having smooth surface 失效
标题翻译：晶圆表面光滑
公开(公告)号：US06281139B1
公开(公告)日：2001-08-28
申请号：US09476644
申请日：1999-12-31
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Zaza Samadashvili
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Zaza Samadashvili
IPC分类号： H01L2131
CPC分类号： H01L21/306
摘要： A method for preparing a wafer having a smooth surface is disclosed. The present invention includes the step of preparing a wafer base and a first material on the wafer base. The wafer base and first material have a surface and a plurality of holes. The present invention includes the step of depositing a second material at an angle on the first material such that the second material is substantially on the surface. The present invention includes the step of exposing the first material and the second material to an oxidizing agent. The present includes the step of reacting a third material on the second surface to close the holes.
摘要翻译：公开了一种制备具有光滑表面的晶片的方法。本发明包括在晶片基底上制备晶片基底和第一材料的步骤。晶片基底和第一材料具有表面和多个孔。本发明包括在第一材料上以一定角度沉积第二材料使得第二材料基本上在表面上的步骤。本发明包括将第一材料和第二材料暴露于氧化剂的步骤。本发明包括在第二表面上使第三材料反应以闭合孔的步骤。

6. 发明授权

US08227885B2 Selective light absorbing semiconductor surface 有权
标题翻译：选择性光吸收半导体表面
公开(公告)号：US08227885B2
公开(公告)日：2012-07-24
申请号：US11825558
申请日：2007-07-05
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Zaza Taliashvili
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Zaza Taliashvili
IPC分类号： H01L33/50
CPC分类号： H01L31/055 , H01L31/02363 , Y02E10/52
摘要： A selective light absorbing semiconductor surface is disclosed. Said semiconductor surface is characterized by the presence of indentations or protrusions comprising a grating of dimensions such as to enhance the absorption of selected frequencies of radiation. In a preferred embodiment of the present invention, said grating is formed on the surface of a doped semiconductor for the purposes of optical frequency down conversion. The semiconductor is doped so as to create energy levels within the forbidden zone between the conduction and valence bands. Incident radiation excites electrons from the valence to conduction band from where they decay to the meta-stable newly created energy level in the forbidden zone. From there, electrons return to the valence band, accompanied by the emission of radiation of lower frequency than that of the incident radiation. Optical frequency down-conversion is thus efficiently and rapidly accomplished. In a further embodiment of the present invention said grating is formed on the entrance and exit surfaces of one or more layers of a single or multi-junction solar cell. In this embodiment said grating is characterized by indents of depth λ/4 and width >λ, where λ is the wavelength of solar radiation incident on the layer under consideration.
摘要翻译：公开了选择性光吸收半导体表面。所述半导体表面的特征在于存在包括尺寸的光栅的凹陷或突起，以增强所选择的辐射频率的吸收。在本发明的优选实施例中，为了进行光频率下变换，所述光栅形成在掺杂半导体的表面上。半导体被掺杂以便在导电带和价带之间的禁区内产生能级。入射辐射激发电子从价态衰减到禁带的元稳定新创能量的价带到导带。从那里，电子返回价带，伴随着辐射频率低于入射辐射的辐射。因此，光频率下变换被有效且快速地实现。在本发明的另一实施例中，所述光栅形成在单结或多结太阳能电池的一层或多层的入射表面和出射表面上。在该实施例中，所述光栅的特征在于深度λ/ 4和宽度>λ，其中λ是入射在所考虑的层上的太阳辐射的波长。

7. 发明申请

US20080067561A1 Quantum interference device 失效
标题翻译：量子干扰装置
公开(公告)号：US20080067561A1
公开(公告)日：2008-03-20
申请号：US11901549
申请日：2007-09-18
申请人： Amiran Bibilashvili , Avto Tavkhelidze
发明人： Amiran Bibilashvili , Avto Tavkhelidze
IPC分类号： H01L29/80 , B32B5/18
CPC分类号： H01L29/66977 , B82Y10/00 , Y10T428/12479
摘要： A quantum interference transistor comprising an source region for emitting electron waves into a vacuum, a drain region for collecting the electron waves, a repeating nanostructure in a region between the source and drain regions for introducing a constant phase shift between a plurality of electron waves, and a gate for controlling the phase shift introduced by the nanostructure; wherein the repeating nanostructure is characterized by having sharply defined geometric patterns or indents of a dimension that creates de Broglie wave interference.
摘要翻译：一种量子干涉晶体管，包括用于将电子波发射到真空中的源极区域，用于收集电子波的漏极区域，在源极和漏极区域之间的区域中的重复纳米结构，用于在多个电子波之间引入恒定的相移，以及用于控制由纳米结构引入的相移的栅极; 其中所述重复纳米结构的特征在于具有锐利定义的几何图案或创建德布罗意波干涉的尺寸的缩进。

8. 发明申请

US20050145836A1 Influence of surface geometry 审中-公开
标题翻译：表面几何的影响
公开(公告)号：US20050145836A1
公开(公告)日：2005-07-07
申请号：US10991257
申请日：2004-11-16
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney Cox
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney Cox
IPC分类号： C30B23/02 , G03F7/00 , H01L21/48 , H01L51/00 , H01L51/40 , H01L29/06
CPC分类号： B82Y10/00 , B82Y40/00 , C30B23/02 , C30B29/02 , G03F7/0002 , H01L21/4867 , H01L51/0021
摘要： This invention is a new class of materials having altered properties. In particular, materials having a surface structure causing electron De Broglie wave interference are described which result in a change in distribution of quantum states within the materials. The materials of the present invention have at least one surface having at least one indent or protrusion to cause electron De Broglie wave interference within the material.
摘要翻译：本发明是具有改变性质的新类材料。特别地，描述了导致电子德布罗意波干涉的表面结构的材料，其导致材料内的量子态分布的变化。本发明的材料具有至少一个表面，其具有至少一个凹陷或突出部，以引起材料内的德布罗意电子波干扰。

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