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1. 发明申请

US20080246492A1 Processing tantalum capacitors on assembled PWAs to yield low failure rate 有权
标题翻译：在组装的PWA上处理钽电容器以产生低故障率
公开(公告)号：US20080246492A1
公开(公告)日：2008-10-09
申请号：US11730995
申请日：2007-04-05
申请人： Allen Michael Ritter , Todd David Greenleaf
发明人： Allen Michael Ritter , Todd David Greenleaf
IPC分类号： G01R31/12 , G01R31/18
CPC分类号： G01R31/016
摘要： A method of conditioning tantalum capacitors on printed wire assemblies is disclosed. According to the method, each of the capacitors on an assembly is subjected to the same conditioning level during testing. To condition the tantalum capacitors, surge currents are induced in the capacitors in a controlled manner as a means of aging the capacitors so that they can be used without de-rating rating with low failure rates. The level of voltage, timing and current levels are set by circuitry used to perform the testing. The same circuits that are used with the capacitors in a system application are also used for the tantalum capacitor test circuit during the conditioning process.
摘要翻译：公开了一种在印刷线组件上调节钽电容器的方法。根据该方法，组件中的每个电容器在测试期间受到相同的调节水平。为了调节钽电容器，电容器中的浪涌电流以受控的方式作为老化电容器的手段而被感应出来，使得它们可以在没有降低额定值且低故障率的情况下使用。电压，定时和电流水平由用于执行测试的电路设置。在系统应用中与电容器一起使用的相同电路在调节过程中也用于钽电容测试电路。

2. 发明授权

US07609072B2 Processing tantalum capacitors on assembled PWAs to yield low failure rate 有权
标题翻译：在组装的PWA上处理钽电容器以产生低故障率
公开(公告)号：US07609072B2
公开(公告)日：2009-10-27
申请号：US11730995
申请日：2007-04-05
申请人： Allen Michael Ritter , Todd David Greenleaf
发明人： Allen Michael Ritter , Todd David Greenleaf
IPC分类号： G01R27/26 , G01R31/12
CPC分类号： G01R31/016
摘要： A method of conditioning tantalum capacitors on printed wire assemblies is disclosed. According to the method, each of the capacitors on an assembly is subjected to the same conditioning level during testing. To condition the tantalum capacitors, surge currents are induced in the capacitors in a controlled manner as a way of aging the capacitors so that they can be used without de-rating rating with low failure rates. The level of voltage, timing and current levels are set by circuitry used to perform the testing. The same circuits that are used with the capacitors in a system application are also used for the tantalum capacitor test circuit during the conditioning process.
摘要翻译：公开了一种在印刷线组件上调节钽电容器的方法。根据该方法，组件中的每个电容器在测试期间受到相同的调节水平。为了调节钽电容器，电容器中的浪涌电流以受控的方式作为老化电容器的方式引起，使得它们可以在没有降低额定值且低故障率的情况下使用。电压，定时和电流水平由用于执行测试的电路设置。在系统应用中与电容器一起使用的相同电路在调节过程中也用于钽电容测试电路。

3. 发明申请

US20140015571A1 SYSTEMS AND METHODS FOR REGULATING SEMICONDUCTOR DEVICES 有权
标题翻译：用于调节半导体器件的系统和方法
公开(公告)号：US20140015571A1
公开(公告)日：2014-01-16
申请号：US13549371
申请日：2012-07-13
申请人： Robert Gregory Wagoner , Todd David Greenleaf , Alan Carroll Lovell
发明人： Robert Gregory Wagoner , Todd David Greenleaf , Alan Carroll Lovell
IPC分类号： H03K3/00
CPC分类号： H03K17/168 , H03K17/14 , H03K17/166
摘要： A system for regulating semiconductor devices may include a current regulator configured to regulate one or more currents provided to an insulated gate bipolar transistor (IGBT). The current regulator may regulate the currents by generating a current profile based at least in part on a collector voltage value associated with the IGBT, a rate of collector voltage change value associated with the IGBT, or any combination thereof The current profile may include one or more current values to be provided to a gate of the IGBT such that the current values are configured to limit the rate of collector voltage change to a first value. The current regulator may then send the one or more current values to a current source configured to supply the gate of the IGBT with one or more currents that correspond to the one or more current values.
摘要翻译：用于调节半导体器件的系统可以包括被配置为调节提供给绝缘栅双极晶体管（IGBT）的一个或多个电流的电流调节器。电流调节器可以至少部分地基于与IGBT相关联的集电极电压值，与IGBT相关联的集电极电压变化值的速率或其任何组合来产生电流分布来调节电流。电流分布可以包括一个或要向IGBT的栅极提供更多的电流值，使得电流值被配置为将集电极电压变化的速率限制为第一值。电流调节器然后可以将一个或多个电流值发送到被配置为向IGBT的栅极提供与一个或多个电流值对应的一个或多个电流的电流源。

4. 发明授权

US06411147B1 System and method for grouped gating control logic 有权
标题翻译：分组门控控制逻辑的系统和方法
公开(公告)号：US06411147B1
公开(公告)日：2002-06-25
申请号：US09685560
申请日：2000-10-11
申请人： Jordan Brantley Casteel , Todd David Greenleaf
发明人： Jordan Brantley Casteel , Todd David Greenleaf
IPC分类号： H03K312
CPC分类号： H02M7/1623 , H02M1/082
摘要： Grouped gating control logic allows for one or more inputs in a group to be active at any given time. Once an input signal in a group is active, all other pulse trains received in the same group can be locked out. Thus, by using a finite state machine to control gate pulses, the noise margin of the gating unit can be regulated and an extra level of protection is available should one of the input gating signals be defective.
摘要翻译：分组门控控制逻辑允许组中的一个或多个输入在任何给定时间处于活动状态。一旦组中的输入信号有效，则可以锁定在同一组中接收的所有其他脉冲串。因此，通过使用有限状态机来控制门脉冲，如果输入门控信号之一有缺陷，则可以调节门控单元的噪声容限，并提供额外的保护级别。

5. 发明授权

US09048831B2 Systems and methods for regulating semiconductor devices 有权
标题翻译：用于调节半导体器件的系统和方法
公开(公告)号：US09048831B2
公开(公告)日：2015-06-02
申请号：US13549371
申请日：2012-07-13
申请人： Robert Gregory Wagoner , Todd David Greenleaf , Alan Carroll Lovell
发明人： Robert Gregory Wagoner , Todd David Greenleaf , Alan Carroll Lovell
IPC分类号： H03K17/60 , H03K17/16 , H03K17/14
CPC分类号： H03K17/168 , H03K17/14 , H03K17/166
摘要： A system for regulating semiconductor devices may include a current regulator configured to regulate one or more currents provided to an insulated gate bipolar transistor (IGBT). The current regulator may regulate the currents by generating a current profile based at least in part on a collector voltage value associated with the IGBT, a rate of collector voltage change value associated with the IGBT, or any combination thereof. The current profile may include one or more current values to be provided to a gate of the IGBT such that the current values are configured to limit the rate of collector voltage change to a first value. The current regulator may then send the one or more current values to a current source configured to supply the gate of the IGBT with one or more currents that correspond to the one or more current values.
摘要翻译：用于调节半导体器件的系统可以包括被配置为调节提供给绝缘栅双极晶体管（IGBT）的一个或多个电流的电流调节器。电流调节器可以至少部分地基于与IGBT相关联的集电极电压值，与IGBT相关联的集电极电压变化值的速率或其任何组合来产生电流分布来调节电流。电流分布可以包括要提供给IGBT的栅极的一个或多个电流值，使得电流值被配置为将集电极电压变化的速率限制为第一值。电流调节器然后可以将一个或多个电流值发送到被配置为向IGBT的栅极提供与一个或多个电流值对应的一个或多个电流的电流源。

6. 发明申请

US20140097886A1 SYSTEMS, METHODS, AND APPARATUS FOR CONTROLLING POWER SEMICONDUCTOR DEVICES 有权
标题翻译：用于控制功率半导体器件的系统，方法和装置
公开(公告)号：US20140097886A1
公开(公告)日：2014-04-10
申请号：US13648816
申请日：2012-10-10
申请人： Mark E. Shepard , Todd David Greenleaf , Alan Carroll Lovell
发明人： Mark E. Shepard , Todd David Greenleaf , Alan Carroll Lovell
IPC分类号： H03H11/02
CPC分类号： H02M1/08 , H02M2001/0012
摘要： Systems, methods, and apparatus for controlling power semiconductor devices are described. According to one embodiment of the disclosure, there is disclosed a system. The system may include at least one power source for selectively providing power to one or more power semiconductor devices controlled by a gate driver. The gate driver may include at least one controller coupled to at least one power semiconductor device interface via a first channel and a second channel configured to provide galvanic isolation of information communicated between the controller and the at least one power semiconductor device interface.
摘要翻译：描述了用于控制功率半导体器件的系统，方法和装置。根据本公开的一个实施例，公开了一种系统。该系统可以包括至少一个电源，用于选择性地向由栅极驱动器控制的一个或多个功率半导体器件提供电力。栅极驱动器可以包括经由第一通道耦合到至少一个功率半导体器件接口的至少一个控制器和被配置为提供在控制器与至少一个功率半导体器件接口之间传送的信息的电隔离的第二通道。

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