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1. 发明授权

US08212337B2 Advanced low k cap film formation process for nano electronic devices 有权
标题翻译：用于纳米电子器件的高级低k帽成膜工艺
公开(公告)号：US08212337B2
公开(公告)日：2012-07-03
申请号：US11972175
申请日：2008-01-10
申请人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
发明人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
IPC分类号： H01L23/58 , H01L23/48
CPC分类号： H01L21/02263 , C23C16/325 , C23C16/56 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834
摘要： A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.
摘要翻译：提供碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富含碳的碳化硅状电介质膜。在一些实施例中，电介质膜可以任选地包括氮。当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。富碳碳化硅状电介质膜可以用作互连结构中的电介质盖层。本发明的电介质膜对UV固化具有很强的鲁棒性，并且在UV固化后保持压缩应力。此外，本发明的电介质膜具有良好的抗氧化性，并且防止金属扩散到互连电介质层中。本发明还提供一种互连结构，其包括作为电介质盖的本发明的电介质膜。还提供了制造本发明的电介质膜的方法。

2. 发明申请

US20090179306A1 ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES 有权
标题翻译： NANO电子器件的高级低k封膜成膜工艺
公开(公告)号：US20090179306A1
公开(公告)日：2009-07-16
申请号：US11972175
申请日：2008-01-10
申请人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
发明人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
IPC分类号： H01L21/768 , H01L23/58 , H01L23/52
CPC分类号： H01L21/02263 , C23C16/325 , C23C16/56 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834
摘要： A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.
摘要翻译：提供碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富含碳的碳化硅状电介质膜。在一些实施例中，电介质膜可以任选地包括氮。当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。富碳碳化硅状电介质膜可以用作互连结构中的电介质盖层。本发明的电介质膜对UV固化具有很强的鲁棒性，并且在UV固化后保持压缩应力。此外，本发明的电介质膜具有良好的抗氧化性，并且防止金属扩散到互连电介质层中。本发明还提供一种互连结构，其包括作为电介质盖的本发明的电介质膜。还提供了制造本发明的电介质膜的方法。

3. 发明申请

US20120202354A1 ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES 有权
标题翻译： NANO电子器件的高级低k封膜成膜工艺
公开(公告)号：US20120202354A1
公开(公告)日：2012-08-09
申请号：US13444415
申请日：2012-04-11
申请人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
发明人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
IPC分类号： H01L21/318
CPC分类号： H01L21/02263 , C23C16/325 , C23C16/56 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834
摘要： A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.
摘要翻译：提供了形成碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富碳碳化硅状电介质膜的方法。电介质膜可以任选地包括氮。当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。

4. 发明授权

US08664109B2 Advanced low k cap film formation process for nano electronic devices 有权
标题翻译：用于纳米电子器件的高级低k帽成膜工艺
公开(公告)号：US08664109B2
公开(公告)日：2014-03-04
申请号：US13444415
申请日：2012-04-11
申请人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
发明人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/02263 , C23C16/325 , C23C16/56 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834
摘要： A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.
摘要翻译：提供了形成碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富碳碳化硅状电介质膜的方法。电介质膜可以任选地包括氮。当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。

5. 发明申请

US20120193767A1 ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES 审中-公开
标题翻译： NANO电子器件的高级低k封膜成膜工艺
公开(公告)号：US20120193767A1
公开(公告)日：2012-08-02
申请号：US13444405
申请日：2012-04-11
申请人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
发明人： Alfred Grill , Joshua L. Herman , Son Nguyen , E. Todd Ryan , Hosadurga K. Shobha
IPC分类号： H01L23/58 , H01L23/52
CPC分类号： H01L21/02263 , C23C16/325 , C23C16/56 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834
摘要： A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure.
摘要翻译：提供碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富含碳的碳化硅状电介质膜。电介质膜可以任选地包括氮。当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。富碳碳化硅状电介质膜可以用作互连结构中的电介质盖层。

6. 发明申请

US20090224374A1 ADVANCED MULTILAYER DIELECTRIC CAP WITH IMPROVED MECHANICAL AND ELECTRICAL PROPERTIES 失效
标题翻译：具有改进的机械和电气特性的高级多层电介质盖
公开(公告)号：US20090224374A1
公开(公告)日：2009-09-10
申请号：US12042873
申请日：2008-03-05
申请人： Ritwik Bhatia , Griselda Bonilla , Alfred Grill , Joshua L. Herman , Son Van Nguyen , E. Todd Ryan , Hosadurga Shobha
发明人： Ritwik Bhatia , Griselda Bonilla , Alfred Grill , Joshua L. Herman , Son Van Nguyen , E. Todd Ryan , Hosadurga Shobha
IPC分类号： H01L23/538 , H01L23/58 , H01L21/31 , H01L21/768
CPC分类号： H01L21/76834 , H01L21/02348 , H01L21/76832
摘要： A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.
摘要翻译：公开了包含相同方法和相关方法的电介质盖，互连结构。本发明的电介质盖包括多层介电材料堆叠，其中叠层的至少一层在后沉积固化处理期间具有良好的抗氧化性，Cu扩散和/或显着更高的机械稳定性，并且包括Si-N键在导电材料，例如Cu。电介质盖表现出高压缩应力和高模量，并且在后沉积固化处理时仍然保持压应力，例如：铜低k后端（BEOL）纳米电子器件，导致较少的膜和器件开裂和可靠性提高。

7. 发明授权

US07737052B2 Advanced multilayer dielectric cap with improved mechanical and electrical properties 失效
标题翻译：先进的多层介质盖，具有改善的机械和电气性能
公开(公告)号：US07737052B2
公开(公告)日：2010-06-15
申请号：US12042873
申请日：2008-03-05
申请人： Ritwik Bhatia , Griselda Bonilla , Alfred Grill , Joshua L. Herman , Son Van Nguyen , E. Todd Ryan , Hosadurga Shobha
发明人： Ritwik Bhatia , Griselda Bonilla , Alfred Grill , Joshua L. Herman , Son Van Nguyen , E. Todd Ryan , Hosadurga Shobha
IPC分类号： H01L21/31 , H01L21/469 , H01L23/58 , H01L23/48
CPC分类号： H01L21/76834 , H01L21/02348 , H01L21/76832
摘要： A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.
摘要翻译：公开了包含相同方法和相关方法的电介质盖，互连结构。本发明的电介质盖包括多层介电材料堆叠，其中叠层的至少一层在后沉积固化处理期间具有良好的抗氧化性，Cu扩散和/或显着更高的机械稳定性，并且包括Si-N键在导电材料，例如Cu。电介质盖表现出高压缩应力和高模量，并且在后沉积固化处理时仍然保持压应力，例如：铜低k后端（BEOL）纳米电子器件，导致较少的膜和器件开裂和可靠性提高。

8. 发明申请

US20090075472A1 METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS 失效
标题翻译：减轻有机电介质中等离子体损伤的方法
公开(公告)号：US20090075472A1
公开(公告)日：2009-03-19
申请号：US11857760
申请日：2007-09-19
申请人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
发明人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/31138 , H01L21/31144 , H01L21/31633 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
摘要翻译：提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽用于形成线沟槽和通孔腔的离子蚀刻。减少的线偏压对金属互连结构的电产量具有有益的影响。

9. 发明申请

US20120329269A1 METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS 有权
标题翻译：减轻有机电介质中等离子体损伤的方法
公开(公告)号：US20120329269A1
公开(公告)日：2012-12-27
申请号：US13602119
申请日：2012-09-01
申请人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
发明人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
IPC分类号： H01L21/768
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/31138 , H01L21/31144 , H01L21/31633 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
摘要翻译：提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽用于形成线沟槽和通孔腔的离子蚀刻。减少的线偏压对金属互连结构的电产量具有有益的影响。

10. 发明授权

US08481423B2 Methods to mitigate plasma damage in organosilicate dielectrics 失效
公开(公告)号：US08481423B2
公开(公告)日：2013-07-09
申请号：US11857760
申请日：2007-09-19
申请人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
发明人： John C. Arnold , Griselda Bonilla , William J. Cote , Geraud Dubois , Daniel C. Edelstein , Alfred Grill , Elbert Huang , Robert D. Miller , Satya V. Nitta , Sampath Purushothaman , E. Todd Ryan , Muthumanickam Sankarapandian , Terry A. Spooner , Willi Volksen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/31138 , H01L21/31144 , H01L21/31633 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

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