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1. 发明申请

US20130161768A1 MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE COUPLED TO A MAGNETIC ELEMENT AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：在与磁性元件耦合的接触结构中具有磁性材料的磁性装置及其制造方法
公开(公告)号：US20130161768A1
公开(公告)日：2013-06-27
申请号：US13334045
申请日：2011-12-21
申请人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
发明人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
IPC分类号： H01L29/82
CPC分类号： H01F10/3263 , G11C11/161 , H01F10/3236 , H01F10/3272 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element.
摘要翻译：磁性装置具有包括磁性材料的接触结构。接触结构是磁性地和/或电耦合到诸如具有磁性隧道结（MTJ）多层结构的磁性元件的磁性元件。包括在接触结构中的磁性材料被配置为通过磁性元件的参考层补偿作用在磁性元件的自由层上的偏移场。

2. 发明授权

US09087633B2 Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof 有权
标题翻译：具有耦合到磁性元件的接触结构中的磁性材料的磁性器件及其制造方法
公开(公告)号：US09087633B2
公开(公告)日：2015-07-21
申请号：US13334045
申请日：2011-12-21
申请人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
发明人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
IPC分类号： H01F10/32 , H01L43/10 , H01L43/08 , G11C11/16
CPC分类号： H01F10/3263 , G11C11/161 , H01F10/3236 , H01F10/3272 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element.
摘要翻译：磁性装置具有包括磁性材料的接触结构。接触结构是磁性地和/或电耦合到诸如具有磁性隧道结（MTJ）多层结构的磁性元件的磁性元件。包括在接触结构中的磁性材料被配置为通过磁性元件的参考层补偿作用在磁性元件的自由层上的偏移场。

3. 发明授权

US08697484B2 Method and system for setting a pinned layer in a magnetic tunneling junction 有权
标题翻译：用于设置磁隧道结中钉扎层的方法和系统
公开(公告)号：US08697484B2
公开(公告)日：2014-04-15
申请号：US13332093
申请日：2011-12-20
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
摘要翻译：描述了用于设置磁结中的钉扎层的方向的方法和系统。一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。在一些方面，PPMA层是合成反铁磁结构的一部分。在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

4. 发明申请

US20130154034A1 METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION 有权
标题翻译：用于在磁性隧道结中设置固定层的方法和系统
公开(公告)号：US20130154034A1
公开(公告)日：2013-06-20
申请号：US13332093
申请日：2011-12-20
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
摘要翻译：描述了用于设置磁结中的钉扎层的方向的方法和系统。一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。在一些方面，PPMA层是合成反铁磁结构的一部分。在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

5. 发明授权

US08766383B2 Method and system for providing a magnetic junction using half metallic ferromagnets 有权
标题翻译：使用半金属铁磁体提供磁结的方法和系统
公开(公告)号：US08766383B2
公开(公告)日：2014-07-01
申请号：US13517731
申请日：2012-06-14
申请人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
发明人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
IPC分类号： H01L29/82 , G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。自由层和钉扎层中的至少一个包括至少一个半金属。

6. 发明申请

US20130009260A1 Method And System For Providing A Magnetic Junction Using Half Metallic Ferromagnets 有权
标题翻译：使用半金属铁磁体提供磁连接的方法和系统
公开(公告)号：US20130009260A1
公开(公告)日：2013-01-10
申请号：US13517731
申请日：2012-06-14
申请人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
发明人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。自由层和钉扎层中的至少一个包括至少一个半金属。

7. 发明申请

US20140056061A1 METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USING SPIN-ORBIT INTERACTION-BASED SWITCHING AND MEMORIES UTILIZING THE DUAL MAGNETIC TUNNELING JUNCTIONS 有权
标题翻译：使用基于旋转相互作用的切换和使用双磁性隧道结的记忆体来提供双磁性隧道结的方法和系统
公开(公告)号：US20140056061A1
公开(公告)日：2014-02-27
申请号：US13851591
申请日：2013-03-27
申请人： Alexey Vasilyevitch Khvalkovskiy , Dmytro Apalkov , Mohamad Towfik Krounbi
发明人： Alexey Vasilyevitch Khvalkovskiy , Dmytro Apalkov , Mohamad Towfik Krounbi
IPC分类号： H01L43/02 , G11C11/16 , H01L43/12
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/18 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F41/325 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert a SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer is switchable using a spin transfer write current driven through the dual magnetic junction.
摘要翻译：描述磁存储器。磁存储器包括双重磁共轭和自旋轨道相互作用（SO）活性层。每个双磁性结包括第一和第二参考层，第一和第二非磁性间隔层和自由层。自由层是磁性的并且在非磁性间隔层之间。非磁性间隔层位于相应的参考层和自由层之间。 SO活性层与每个双磁性结的第一参考层相邻。 SO活性层由于电流通过基本上垂直于SO活性层和第一参考层之间的方向的SO活性层而在第一参考层上施加SO转矩。第一参考层具有可通过至少SO转矩改变的磁矩。自由层可以使用通过双磁性结驱动的自旋转移写入电流进行切换。

8. 发明申请

US20140175577A1 METHOD AND SYSTEM FOR PROVIDING VERTICAL SPIN TRANSFER SWITCHED MAGNETIC JUNCTIONS AND MEMORIES USING SUCH JUNCTIONS 有权
标题翻译：用于提供垂直转子切换磁性结和使用这种结点的记忆的方法和系统
公开(公告)号：US20140175577A1
公开(公告)日：2014-06-26
申请号：US13751304
申请日：2013-01-28
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置并位于基板上的磁结。磁结包括参考层，非磁性间隔层和自由层。非磁性间隔层位于参考层和自由层之间。自由层，非磁性间隔层和参考层与衬底形成非零角度。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

9. 发明申请

US20130155754A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY UTILIZING A SHIFT REGISTER 有权
标题翻译：提供使用移位寄存器的磁记录的方法和系统
公开(公告)号：US20130155754A1
公开(公告)日：2013-06-20
申请号：US13332230
申请日：2011-12-20
申请人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
发明人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
IPC分类号： G11C19/02
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1675
摘要： A magnetic memory is described. The magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain walls shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.
摘要翻译：描述磁存储器。磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。每个磁存储元件包括被钉扎层，自由层和在钉扎层和自由层之间的非磁性间隔层。当写入电流通过磁存储元件时，自由层可在稳定磁状态之间切换。移位寄存器对应于磁存储元件。每个移位寄存器包括由畴壁分隔的域。一个域与相邻域反向并行。移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时，每个畴壁移动到邻接畴壁的位置。

10. 发明授权

US08649214B2 Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof 有权
标题翻译：磁存储器包括与磁移位寄存器集成的磁存储单元及其方法
公开(公告)号：US08649214B2
公开(公告)日：2014-02-11
申请号：US13332230
申请日：2011-12-20
申请人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
发明人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
IPC分类号： G11C11/15
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1675
摘要： A magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain wall shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.
摘要翻译：磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。每个磁存储元件包括被钉扎层，自由层和在钉扎层和自由层之间的非磁性间隔层。当写入电流通过磁存储元件时，自由层可在稳定磁状态之间切换。移位寄存器对应于磁存储元件。每个移位寄存器包括由畴壁分隔的域。一个域与相邻域反向并行。移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时，每个域壁移动到相邻畴壁的位置。

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