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1. 发明授权

US08620843B2 Pattern recognition using active media 有权
标题翻译：使用活动媒体的模式识别
公开(公告)号：US08620843B2
公开(公告)日：2013-12-31
申请号：US12697198
申请日：2010-01-29
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov , Ekaterina V. Ponizovskaya Devine
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov , Ekaterina V. Ponizovskaya Devine
IPC分类号： G06F15/18
CPC分类号： G06K9/00
摘要： A pattern recognition system includes an active media, an input system, and a sensing system. The active media is such that initial states respectively evolve over time to distinguishable final states. The input system establishes in the active media in an initial state corresponding to an input pattern, and the sensing system measures the media at separated locations to identify of which of the final states the media has after an evolution time. The identification of the final state indicates a feature of the input pattern.
摘要翻译：模式识别系统包括活动媒体，输入系统和感测系统。活跃的媒体是这样的，初始状态分别随着时间推移到可区分的最终状态。输入系统在与输入模式对应的初始状态下在活动介质中建立，并且感测系统测量分离位置处的介质，以识别介质在演化时间之后的最终状态。最终状态的识别表示输入模式的特征。

2. 发明申请

US20110188755A1 PATTERN RECOGNITION USING ACTIVE MEDIA 有权
标题翻译：使用活动媒体的图案识别
公开(公告)号：US20110188755A1
公开(公告)日：2011-08-04
申请号：US12697198
申请日：2010-01-29
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov , Ekaterina V. Ponizovskaya Devine
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov , Ekaterina V. Ponizovskaya Devine
IPC分类号： G06K9/00
CPC分类号： G06K9/00
摘要： A pattern recognition system includes an active media, an input system, and a sensing system. The active media is such that initial states respectively evolve over time to distinguishable final states. The input system establishes in the active media in an initial state corresponding to an input pattern, and the sensing system measures the media at separated locations to identify of which of the final states the media has after an evolution time. The identification of the final state indicates a feature of the input pattern.
摘要翻译：模式识别系统包括活动媒体，输入系统和感测系统。活跃的媒体是这样的，初始状态分别随着时间推移到可区分的最终状态。输入系统在与输入模式对应的初始状态下在活动介质中建立，并且感测系统测量分离位置处的介质，以识别介质在演化时间之后的最终状态。最终状态的识别表示输入模式的特征。

3. 发明授权

US08476647B2 Silicon-germanium, quantum-well, light-emitting diode 有权
标题翻译：硅锗，量子阱，发光二极管
公开(公告)号：US08476647B2
公开(公告)日：2013-07-02
申请号：US13259455
申请日：2009-09-25
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov
IPC分类号： H01L27/15 , H01L29/18 , H01L31/12 , H01L33/00
CPC分类号： H01L33/34 , H01L33/06
摘要： A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.
摘要翻译：硅锗，量子阱，发光二极管。发光二极管包括p掺杂部分，量子阱部分和p掺杂部分。量子阱部分设置在p掺杂部分和n掺杂部分之间。量子阱部分包括载体限制区域，其被配置为通过电子与限制在载体限制区域内的孔的直接复合产生的光的发射来促进发光。 p掺杂部分包括硅 - 锗的第一合金，并且n掺杂部分包括硅 - 锗的第二合金。

4. 发明申请

US20120006514A1 GRID HEAT SINK 审中-公开
标题翻译：网路散热器
公开(公告)号：US20120006514A1
公开(公告)日：2012-01-12
申请号：US13257390
申请日：2009-03-25
申请人： Alexandre M. Bratkovski , Lennie K. Kiyama , Viatcheslav Osipov , Graeme W. Burward-Hoy
发明人： Alexandre M. Bratkovski , Lennie K. Kiyama , Viatcheslav Osipov , Graeme W. Burward-Hoy
IPC分类号： F28F13/00 , F28F7/00
CPC分类号： H01L23/467 , F28F3/02 , H01L23/367 , H01L2924/0002 , H01L2924/00
摘要： A grid heat sink includes primary fins extending from a base and cross fins which intersect the primary fins and form a number of channels. A fan moves cooling air through the channels to remove heat from the primary and cross fins. In one illustrative embodiment, the grid heat sink includes a base, a plurality of intersecting fins, and a plurality of channels formed by the intersecting fins. Each of the channels accept cooling air at an input side of the grid heat sink and direct the cooling air to exit an output side of the grid heat sink.
摘要翻译：栅格散热器包括从基部延伸的主翅片和与主翅片相交并形成多个通道的交叉散热片。风扇通过通道移动冷却空气，以从主和交叉散热片移除热量。在一个说明性实施例中，网格散热器包括基座，多个相交的翅片以及由相交翅片形成的多个通道。每个通道在电网散热器的输入侧接受冷却空气，并引导冷却空气离开电网散热器的输出侧。

5. 发明申请

US20120175586A1 SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE 有权
标题翻译：硅锗，量子阱，发光二极管
公开(公告)号：US20120175586A1
公开(公告)日：2012-07-12
申请号：US13259455
申请日：2009-09-25
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov
IPC分类号： H01L33/06
CPC分类号： H01L33/34 , H01L33/06
摘要： A silicon-germanium, quantum-well, light-emitting diode (120). The light-emitting diode (120) includes a p-doped portion (410), a quantum-well portion (420), and an p-doped portion (430). The quantum-well portion (420) is disposed between the p-doped portion (410) and the n-doped portion (430). The quantum-well portion (420) includes a carrier confinement region that is configured to facilitate luminescence with emission of light (344) produced by direct recombination (340) of an electron (314) with a hole (324) confined within the carrier confinement region. The p-doped portion (410) includes a first alloy of silicon-germanium, and the n-doped portion (430) includes a second alloy of silicon-germanium.
摘要翻译：硅锗，量子阱，发光二极管（120）。发光二极管（120）包括p掺杂部分（410），量子阱部分（420）和p掺杂部分（430）。量子阱部分（420）设置在p掺杂部分（410）和n掺杂部分（430）之间。量子阱部分（420）包括载体限制区域，其被配置为便于通过电子（314）的直接复合（340）产生的发射光（344）的发光，所述电子（314）具有限定在载体限制内的孔（324）地区。 p掺杂部分（410）包括硅 - 锗的第一合金，并且n掺杂部分（430）包括硅 - 锗的第二合金。

6. 发明申请

US20110096589A1 NANOWIRE-BASED MEMRISTOR DEVICES 有权
标题翻译：基于纳米级的电容器件
公开(公告)号：US20110096589A1
公开(公告)日：2011-04-28
申请号：US12606871
申请日：2009-10-27
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov
IPC分类号： H01L45/00 , G11C11/21
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0073 , G11C2013/009 , G11C2213/16 , G11C2213/18 , G11C2213/19 , G11C2213/33 , H01L45/08 , H01L45/085 , H01L45/148 , Y10S977/943
摘要： Embodiments of the present invention are directed to memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes a first electrode, a second electrode, and a nanowire disposed between the first electrode and the second electrode. The nanowire is configured with an inner region surrounded by an outer layer. The memristor device may also include a mobile dopant confined to the inner region by repulsive electrostatic forces between the outer layer and the mobile dopant. The resistance of the nanowire is determined by the distribution of the mobile dopant in the inner region.
摘要翻译：本发明的实施例涉及提供非易失性忆阻切换的忆阻器装置。在一个实施例中，忆阻器件包括设置在第一电极和第二电极之间的第一电极，第二电极和纳米线。纳米线配置有被外层包围的内部区域。忆阻器件还可以包括通过外层和移动掺杂剂之间的排斥静电力限制在内部区域的移动掺杂剂。纳米线的电阻由内部区域中的移动掺杂剂的分布决定。

7. 发明授权

US08471270B2 Indirect-bandgap-semiconductor, light-emitting diode 有权
标题翻译：间接带隙半导体，发光二极管
公开(公告)号：US08471270B2
公开(公告)日：2013-06-25
申请号：US13257393
申请日：2009-03-23
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov
IPC分类号： H01L27/15 , H01L29/18 , H01L31/12 , H01L33/00
CPC分类号： H01L33/34 , H01L33/0012
摘要： An indirect-bandgap-semiconductor, light-emitting diode. The indirect-bandgap-semiconductor, light-emitting diode includes a plurality of portions including a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of the indirect-bandgap semiconductor, and a n-doped portion of the indirect-bandgap semiconductor. The intrinsic portion is disposed between the p-doped portion and the n-doped portion and forms a p-i junction with the p-doped portion, and an i-n junction with the n-doped portion. The p-i junction and the i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion when the indirect-bandgap-semiconductor, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.
摘要翻译：间接带隙半导体，发光二极管。间接带隙半导体发光二极管包括多个部分，其包括间接带隙半导体的p掺杂部分，间接带隙半导体的本征部分和间接带隙的n掺杂部分半导体。本征部分设置在p掺杂部分和n掺杂部分之间，并与p掺杂部分形成p-i结，并与n掺杂部分形成i-n结。当间接带隙半导体发光二极管被反向偏置时，pi结和in结被构造成便于在本征部分中形成至少一个热电子空穴等离子体，并且促进通过热的复合产生的发光电子有孔。

8. 发明申请

US20120012863A1 INDIRECT-BANDGAP-SEMICONDUCTOR, LIGHT-EMITTING DIODE 有权
标题翻译：间接双峰半导体，发光二极管
公开(公告)号：US20120012863A1
公开(公告)日：2012-01-19
申请号：US13257393
申请日：2009-03-23
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov
IPC分类号： H01L33/34
CPC分类号： H01L33/34 , H01L33/0012
摘要： An indirect-bandgap-semiconductor, light-emitting diode. The indirect-bandgap-semiconductor, light-emitting diode includes a plurality of portions including a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of the indirect-bandgap semiconductor, and a n-doped portion of the indirect-bandgap semiconductor. The intrinsic portion is disposed between the p-doped portion and the n-doped portion and forms a p-i junction with the p-doped portion, and an i-n junction with the n-doped portion. The p-i junction and the i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion when the indirect-bandgap-semiconductor, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.
摘要翻译：间接带隙半导体，发光二极管。间接带隙半导体发光二极管包括多个部分，其包括间接带隙半导体的p掺杂部分，间接带隙半导体的本征部分和间接带隙的n掺杂部分半导体。本征部分设置在p掺杂部分和n掺杂部分之间，并与p掺杂部分形成p-i结，并与n掺杂部分形成i-n结。当间接带隙半导体发光二极管被反向偏置时，pi结和in结被构造成便于在本征部分中形成至少一个热电子空穴等离子体，并且促进通过热的复合产生的发光电子有孔。

9. 发明授权

US08050078B2 Nanowire-based memristor devices 有权
标题翻译：基于纳米线的忆阻器
公开(公告)号：US08050078B2
公开(公告)日：2011-11-01
申请号：US12606871
申请日：2009-10-27
申请人： Alexandre M. Bratkovski , Viatcheslav Osipov
发明人： Alexandre M. Bratkovski , Viatcheslav Osipov
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0073 , G11C2013/009 , G11C2213/16 , G11C2213/18 , G11C2213/19 , G11C2213/33 , H01L45/08 , H01L45/085 , H01L45/148 , Y10S977/943
摘要： Embodiments of the present invention are directed to memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes a first electrode, a second electrode, and a nanowire disposed between the first electrode and the second electrode. The nanowire is configured with an inner region surrounded by an outer layer. The memristor device may also include a mobile dopant confined to the inner region by repulsive electrostatic forces between the outer layer and the mobile dopant. The resistance of the nanowire is determined by the distribution of the mobile dopant in the inner region.
摘要翻译：本发明的实施例涉及提供非易失性忆阻切换的忆阻器装置。在一个实施例中，忆阻器件包括设置在第一电极和第二电极之间的第一电极，第二电极和纳米线。纳米线配置有被外层包围的内部区域。忆阻器件还可以包括通过外层和移动掺杂剂之间的排斥静电力限制在内部区域的移动掺杂剂。纳米线的电阻由内部区域中的移动掺杂剂的分布决定。

10. 发明申请

US20070115597A1 Spin injection devices 有权
公开(公告)号：US20070115597A1
公开(公告)日：2007-05-24
申请号：US11649931
申请日：2007-01-05
申请人： Viatcheslav Osipov , Alexandre Bratkovski
发明人： Viatcheslav Osipov , Alexandre Bratkovski
IPC分类号： G11B5/127
CPC分类号： G11C11/16 , H01L29/66984 , H01L43/08
摘要： Devices such as transistors, amplifiers, frequency multipliers, and square-law detectors use injection of spin-polarized electrons from one magnetic region, into another through a control region and spin precession of injected electrons in a magnetic field induced by current in a nanowire. In one configuration, the nanowire is also one of the magnetic regions and the control region is a semiconductor region between the magnetic nanowire and the other magnetic region. Alternatively, the nanowire is insulated from the control region and the two separate magnetic regions. The relative magnetizations of the magnetic regions can be selected to achieve desired device properties. A first voltage applied between one magnetic region and the other magnetic nanowire or region causes injection of spin-polarized electrons through the control region, and a second voltage applied between the ends of the nanowire causes a current and a magnetic field that rotates electron spins to control device conductivity.

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