专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09822377B2 Mutant CD83 promoter and use thereof 有权
公开(公告)号：US09822377B2
公开(公告)日：2017-11-21
申请号：US14113844
申请日：2012-04-27
申请人： Alexander Steinkasserer , Marcello Stein , Thomas Werner , Ilka Knippertz
发明人： Alexander Steinkasserer , Marcello Stein , Thomas Werner , Ilka Knippertz
IPC分类号： C12N15/85 , C12N15/86
CPC分类号： C12N15/85 , C12N15/86 , C12N2710/10041
摘要： The present invention provides a mutant CD83 promoter comprising the promoter/enhancer regions of human CD83 promoter and being dendritic cell-specific, and the use thereof, specifically for the treatment or prevention of diseases or medical conditions related to malignancy, autoimmunity or prevention of transplant rejections.

2. 发明申请

US20140050748A1 MUTANT CD83 PROMOTER AND USE THEREOF 有权
标题翻译： MUTANT CD83 PROMOTER及其用途
公开(公告)号：US20140050748A1
公开(公告)日：2014-02-20
申请号：US14113844
申请日：2012-04-27
申请人： Alexander Steinkasserer , Marcello Stein , Thomas Werner , Ilka Knippertz
发明人： Alexander Steinkasserer , Marcello Stein , Thomas Werner , Ilka Knippertz
IPC分类号： C12N15/85
CPC分类号： C12N15/85 , C12N15/86 , C12N2710/10041
摘要： The present invention provides a mutant CD83 promoter comprising the promoter/enhancer regions of human CD83 promoter and being dendritic cell-specific, and the use thereof, specifically for the treatment or prevention of diseases or medical conditions related to malignancy, autoimmunity or prevention of transplant rejections.
摘要翻译：本发明提供了包含人CD83启动子的启动子/增强子区并且是树突状细胞特异性的突变体CD83启动子，以及其用于治疗或预防与恶性肿瘤，自身免疫或预防移植有关的疾病或医学病症的用途拒绝

3. 发明授权

US09272732B2 Method for determining a rack force for a steering apparatus and steering apparatus 有权
标题翻译：用于确定转向装置和转向装置的齿条力的方法
公开(公告)号：US09272732B2
公开(公告)日：2016-03-01
申请号：US14347822
申请日：2012-09-10
申请人： Roland Greul , Thomas Werner , Joerg Strecker
发明人： Roland Greul , Thomas Werner , Joerg Strecker
IPC分类号： B62D15/02 , B62D6/00
CPC分类号： B62D15/0225 , B62D6/008
摘要： A method for determining a rack force for a steering apparatus of a vehicle, in which the rack force is determined as a function of a steering angle variable which characterizes an actual wheel steering angle or a set point of the wheel steering angle. In order to specify a method for determining a rack force, with which a target steering torque can be generated such that a comfortable steering feel is imparted to the driver and the steering apparatus nevertheless gives the driver feedback that is as realistic as possible regarding the motion state of the vehicle, the method comprises: determining a variable which characterizes a lateral force on a shaft of the steering apparatus, and determining the rack force as a function of the lateral force, wherein the determination of the rack force comprises a filtering by means of a signal processing element having a proportional-differential transfer function.
摘要翻译：一种用于确定车辆转向装置的齿条力的方法，其中机架力被确定为表征车轮转向角的实际车轮转向角或设定点的转向角变量的函数。为了确定用于确定机架力的方法，通过该方法可以产生目标转向扭矩，使得向驾驶员和转向装置赋予舒适的转向感，然而给予驾驶员对于运动尽可能现实的反馈该方法包括：确定表征转向装置的轴上的横向力的变量，以及确定作为横向力的函数的齿条力，其中机架力的确定包括通过装置的过滤具有比例差分传递函数的信号处理元件。

4. 发明授权

US09174673B2 Method for determining a steering rock force for a steering device in a vehicle, steering device and open-loop and/or closed-loop control device for a steering device 有权
标题翻译：用于确定车辆中的转向装置的转向岩石力的方法，用于转向装置的转向装置和开环和/或闭环控制装置
公开(公告)号：US09174673B2
公开(公告)日：2015-11-03
申请号：US14116790
申请日：2012-07-16
申请人： Joerg Strecker , Thomas Werner
发明人： Joerg Strecker , Thomas Werner
IPC分类号： B62D11/00 , B62D55/02 , B62D6/04 , B62D6/00
CPC分类号： B62D6/04 , B62D6/008
摘要： A method for determining a steering rack force (FR) for a steering system of a vehicle, in which a first steering rack force (RFD) is ascertained as a function of at least one force that occurs in the steering system or at least one torque (tor_RA) that occurs in the steering system. So as to provide less strong feedback on the force conditions in the steering system for reasons of driving comfort, in particular when this is currently not required, it is proposed to ascertain a second steering rack force (RFC) as a function of at least one vehicle variable (v, ang_RA), which characterizes the state of movement of the vehicle, and to generate a resulting steering rack force (FR) based on the first steering rack force (RFD) and the second steering rack force (RFC).
摘要翻译：一种用于确定用于车辆的转向系统的转向齿条力（FR）的方法，其中第一转向齿条力（RFD）被确定为在转向系统中发生的至少一个力的函数或至少一个扭矩（tor_RA）发生在转向系统中。为了提供驾驶舒适性的原因，对转向系统的力条件提供较少的强烈反馈，特别是当目前不需要时，建议确定第二转向架力（RFC）作为至少一个车辆变量（v，ang_RA），其表征车辆的运动状态，并且基于第一转向齿条力（RFD）和第二转向齿条力（RFC）产生所产生的转向齿条力（FR）。

5. 发明授权

US08788147B2 Method for determining a toothed rack force for a steering device in a vehicle 有权
标题翻译：用于确定车辆中的转向装置的齿条力的方法
公开(公告)号：US08788147B2
公开(公告)日：2014-07-22
申请号：US13317281
申请日：2011-10-13
申请人： Joerg Strecker , Thomas Werner
发明人： Joerg Strecker , Thomas Werner
IPC分类号： B62D6/00
CPC分类号： B62D6/008 , B62D5/0472 , G01L5/221
摘要： Disclosed is a method for determining a toothed rack force on a steering device in a vehicle, wherein the toothed rack force (forZS) is determined as a function of a plurality of models, and wherein a component (forESM) of the toothed rack force (forZS) which relates to a driving process is generated by means of a first model, and a component of the toothed rack force (forZS) which relates to a parking process is generated by means of a second model.
摘要翻译：公开了一种用于确定车辆中的转向装置上的齿条力的方法，其中，齿条力（forZS）被确定为多个模型的函数，并且其中齿条力的分量（forESM） forZS）通过第一模型产生，并且通过第二模型生成与驻车过程相关的齿条力（forZS）的分量。

6. 发明授权

US08652341B2 Method and apparatus for structuring components made of a material composed of silicon oxide 失效
标题翻译：用于构成由氧化硅构成的材料制成的部件的方法和装置
公开(公告)号：US08652341B2
公开(公告)日：2014-02-18
申请号：US12433128
申请日：2009-04-30
申请人： Thomas Gessner , Andreas Bertz , Reinhard Schubert , Thomas Werner , Wolfgang Hentsch , Reinhard Fendler , Lutz Koehler
发明人： Thomas Gessner , Andreas Bertz , Reinhard Schubert , Thomas Werner , Wolfgang Hentsch , Reinhard Fendler , Lutz Koehler
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： C03C15/00 , C03C23/006 , C03C2204/08
摘要： A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.
摘要翻译：一种用于在由氧化硅，特别是硅酸盐玻璃，玻璃陶瓷或石英组成的材料制成的部件上形成结构的方法和装置，其中根据该方法至少部件的第一表面部分去除通过等离子体蚀刻发生材料，并且在等离子体蚀刻期间，至少在要蚀刻的表面处建立基板温度，其基本上大于90℃但小于材料的软化温度。该装置为此用于产生衬底温度的加热器。

7. 发明授权

US08609524B2 Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier 有权
标题翻译：一种制造半导体器件的方法，包括具有增强的扩散阻挡层的替换栅电极结构
公开(公告)号：US08609524B2
公开(公告)日：2013-12-17
申请号：US12894469
申请日：2010-09-30
申请人： Kai Frohberg , Frank Feustal , Thomas Werner
发明人： Kai Frohberg , Frank Feustal , Thomas Werner
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/8238
CPC分类号： H01L29/7843 , H01L21/76816 , H01L21/76832 , H01L21/76834 , H01L21/76841 , H01L21/84 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： In sophisticated semiconductor devices, the integrity of the device level may be enhanced after applying a replacement gate approach by providing an additional diffusion barrier layer, such as a silicon nitride layer, thereby obtaining a similar degree of diffusion blocking capabilities as in semiconductor devices without performing a replacement gate approach.
摘要翻译：在复杂的半导体器件中，通过提供附加的扩散阻挡层（例如氮化硅层）应用替换栅极方法之后，器件电平的完整性可以被增强，从而获得与半导体器件相似的扩散阻挡能力，而不执行替代门方法。

8. 发明授权

US08420533B2 Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding 有权
标题翻译：包括通过硬掩模四舍五入形成的圆形互连的半导体器件的金属化系统
公开(公告)号：US08420533B2
公开(公告)日：2013-04-16
申请号：US12939424
申请日：2010-11-04
申请人： Robert Seidel , Thomas Werner
发明人： Robert Seidel , Thomas Werner
IPC分类号： H01L21/44
CPC分类号： H01L21/76804 , H01L21/31144 , H01L21/76811
摘要： In sophisticated metallization systems, vertical contacts and metal lines may be formed on the basis of a dual inlaid strategy, wherein an edge rounding or corner rounding may be applied to the trench hard mask prior to forming the via openings on the basis of a self-aligned via trench concept. Consequently, self-aligned interconnect structures may be obtained, while at the same time providing superior fill conditions during the deposition of barrier materials and conductive fill materials.
摘要翻译：在复杂的金属化系统中，可以基于双嵌入式策略形成垂直触点和金属线，其中可以在形成通孔之前，将边缘圆形或圆角圆化施加到沟槽硬掩模，通过沟槽概念对齐。因此，可以获得自对准的互连结构，同时在阻挡材料和导电填充材料的沉积期间提供优异的填充条件。

9. 发明授权

US08357610B2 Reducing patterning variability of trenches in metallization layer stacks with a low-k material by reducing contamination of trench dielectrics 有权
标题翻译：通过减少沟槽电介质的污染，减少具有低k材料的金属化层堆叠中的沟槽的图案变化
公开(公告)号：US08357610B2
公开(公告)日：2013-01-22
申请号：US12355112
申请日：2009-01-16
申请人： Frank Feustel , Thomas Werner , Michael Grillberger , Kai Frohberg
发明人： Frank Feustel , Thomas Werner , Michael Grillberger , Kai Frohberg
IPC分类号： H01L21/308 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/76807 , H01L21/76808 , H01L21/76831 , H01L21/76835 , H01L23/5226 , H01L23/53238 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： By forming a protection layer prior to the application of the planarization layer during a dual damascene strategy for first patterning vias and then trenches, enhanced etch fidelity may be accomplished. In other aspects disclosed herein, via openings and trenches may be patterned in separate steps, which may be accomplished by different etch behaviors of respective dielectric materials and/or the provision of an appropriate etch stop layer, while filling the via opening and the trench with a barrier material and a highly conductive metal may be achieved in a common fill sequence. Hence, the via opening may be formed on the basis of a reduced aspect ratio, while nevertheless providing a highly efficient overall process sequence.
摘要翻译：通过在用于首先图形化通孔和沟槽的双镶嵌策略期间施加平坦化层之前形成保护层，可以实现增强的蚀刻保真度。在本文公开的其他方面，通孔开口和沟槽可以在单独的步骤中被图案化，其可以通过各个介电材料的不同蚀刻行为和/或提供适当的蚀刻停止层来实现，同时将通孔开口和沟槽填充可以在共同的填充序列中实现阻挡材料和高导电性金属。因此，可以基于减小的纵横比来形成通孔开口，同时提供高效的总体工艺顺序。

10. 发明授权

US08344474B2 Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones 有权
标题翻译：微结构器件包括具有自对准气隙的金属化结构和再填充气隙排除区
公开(公告)号：US08344474B2
公开(公告)日：2013-01-01
申请号：US12708230
申请日：2010-02-18
申请人： Robert Seidel , Thomas Werner
发明人： Robert Seidel , Thomas Werner
IPC分类号： H01L21/70
CPC分类号： H01L23/5222 , H01L21/76816 , H01L21/7682 , H01L21/76825 , H01L21/76837 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a sophisticated metallization system, self-aligned air gaps may be provided in a locally selective manner by using a radiation sensitive material for filling recesses or for forming therein the metal regions. Consequently, upon selectively exposing the radiation sensitive material, a selective removal of exposed or non-exposed portions may be accomplished, thereby resulting in a highly efficient overall manufacturing flow.
摘要翻译：在复杂的金属化系统中，可以通过使用用于填充凹部的辐射敏感材料或用于在其中形成金属区域以局部选择性方式提供自对准气隙。因此，在选择性地暴露辐射敏感材料之后，可以实现暴露部分或非暴露部分的选择性去除，从而产生高效率的总体制造流程。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式