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1. 发明授权

US09219020B2 Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices 有权
标题翻译：半导体器件，晶片组件以及制造晶片组件和半导体器件的方法
公开(公告)号：US09219020B2
公开(公告)日：2015-12-22
申请号：US13415340
申请日：2012-03-08
申请人： Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt
发明人： Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt
IPC分类号： H01L21/00 , H01L23/31 , H01L21/20 , H01L21/56 , H01L21/762
CPC分类号： H01L21/78 , H01L21/2007 , H01L21/56 , H01L21/76224 , H01L23/3178 , H01L23/564 , H01L29/7393 , H01L29/78 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls.
摘要翻译：在其中形成半导体元件的基板的工作表面中形成空腔。将由玻璃材料形成的玻璃片接合到基板上，并且用玻璃材料填充空腔。例如，使用预先图案化的玻璃片，其包括配合到空腔中的突起。宽度大于10微米的腔体被快速可靠地填充。空腔可以具有倾斜的侧壁。

2. 发明申请

US20130234297A1 SEMICONDUCTOR DEVICE, WAFER ASSEMBLY AND METHODS OF MANUFACTURING WAFER ASSEMBLIES AND SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件，波导组件和制造波导组件和半导体器件的方法
公开(公告)号：US20130234297A1
公开(公告)日：2013-09-12
申请号：US13415340
申请日：2012-03-08
申请人： Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt
发明人： Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt
IPC分类号： H01L29/06 , H01L21/78
CPC分类号： H01L21/78 , H01L21/2007 , H01L21/56 , H01L21/76224 , H01L23/3178 , H01L23/564 , H01L29/7393 , H01L29/78 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls.
摘要翻译：在其中形成半导体元件的基板的工作表面中形成空腔。将由玻璃材料形成的玻璃片接合到基板上，并且用玻璃材料填充空腔。例如，使用预先图案化的玻璃片，其包括配合到空腔中的突起。宽度大于10微米的腔体被快速可靠地填充。空腔可以具有倾斜的侧壁。

3. 发明授权

US08361893B2 Semiconductor device and substrate with chalcogen doped region 有权
标题翻译：半导体器件和具有硫属元素掺杂区的衬底
公开(公告)号：US08361893B2
公开(公告)日：2013-01-29
申请号：US13075475
申请日：2011-03-30
申请人： Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
发明人： Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
IPC分类号： H01L21/265
CPC分类号： H01L29/0607 , H01L21/223 , H01L21/2253 , H01L21/26506 , H01L21/26513 , H01L29/0843 , H01L29/0847 , H01L29/0878 , H01L29/1016 , H01L29/167 , H01L29/66136 , H01L29/66348 , H01L29/66363 , H01L29/66712 , H01L29/66909 , H01L29/7397 , H01L29/7802
摘要： An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.
摘要翻译：通过在未掺杂的半导体衬底的一侧施加应力来掺杂未掺杂的半导体衬底，以释放衬底中的自间隙并将硫属原子注入到衬底的侧面。将衬底退火以形成含有硫属原子的第一半导体区域和没有硫属原子的第二半导体区域。第一半导体区域的掺杂浓度高于第二半导体区域的掺杂浓度。在存在自填隙的情况下将硫属原子向半导体材料中的扩散也可用于在功率半导体器件中形成场停止区。

4. 发明申请

US20120248576A1 Semiconductor Device and Substrate with Chalcogen Doped Region 有权
标题翻译：具有硫族元素掺杂区域的半导体器件和衬底
公开(公告)号：US20120248576A1
公开(公告)日：2012-10-04
申请号：US13075475
申请日：2011-03-30
申请人： Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
发明人： Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
IPC分类号： H01L21/425 , H01L29/06
CPC分类号： H01L29/0607 , H01L21/223 , H01L21/2253 , H01L21/26506 , H01L21/26513 , H01L29/0843 , H01L29/0847 , H01L29/0878 , H01L29/1016 , H01L29/167 , H01L29/66136 , H01L29/66348 , H01L29/66363 , H01L29/66712 , H01L29/66909 , H01L29/7397 , H01L29/7802
摘要： An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.
摘要翻译：通过在未掺杂的半导体衬底的一侧施加应力来掺杂未掺杂的半导体衬底，以释放衬底中的自间隙并将硫属原子注入到衬底的侧面。将衬底退火以形成含有硫属原子的第一半导体区域和没有硫属原子的第二半导体区域。第一半导体区域的掺杂浓度高于第二半导体区域的掺杂浓度。在存在自填隙的情况下将硫属原子向半导体材料中的扩散也可用于在功率半导体器件中形成场停止区。

5. 发明授权

US09076455B2 Temporal interpolation of adjacent spectra 有权
公开(公告)号：US09076455B2
公开(公告)日：2015-07-07
申请号：US13591667
申请日：2012-08-22
申请人： Mohamed Krini , Gerhard Schmidt , Bernd Iser , Arthur Wolf
发明人： Mohamed Krini , Gerhard Schmidt , Bernd Iser , Arthur Wolf
IPC分类号： G10L21/0208 , G10K11/00 , G10L21/02 , G10L19/02
CPC分类号： G10L21/0208 , G10K11/002 , G10L19/0204 , G10L21/02 , G10L2021/02082
摘要： Embodiments of the present invention exploit redundancy of succeeding FFT spectra and use this redundancy for computing interpolated temporal supporting points. An analysis filter bank converts overlapped sequences of an audio (ex. loudspeaker) signal from a time domain to a frequency domain to obtain a time series of short-time loudspeaker spectra. An interpolator temporally interpolates this time series. The interpolation is fed to an echo canceller, which computes an estimated echo spectrum. A microphone analysis filter bank converts overlapped sequences of an audio microphone signal from the time domain to the frequency domain to obtain a time series of short-time microphone spectra. The estimated echo spectrum is subtracted from the microphone spectrum. Further signal enhancement (filtration) may be applied. A synthesis filter bank converts the filtered microphone spectra to the time domain to generate an echo compensated audio microphone signal. Computational complexity of signal processing systems can, therefore, be reduced.

6. 发明授权

US09026435B2 Method for estimating a fundamental frequency of a speech signal 有权
标题翻译：用于估计语音信号的基频的方法
公开(公告)号：US09026435B2
公开(公告)日：2015-05-05
申请号：US12772562
申请日：2010-05-03
申请人： Mohamed Krini , Gerhard Schmidt
发明人： Mohamed Krini , Gerhard Schmidt
IPC分类号： G10L19/09 , G10L25/90 , G10L21/0216
CPC分类号： G10L25/90 , G10L2021/02168
摘要： The invention provides a method for estimating a fundamental frequency of a speech signal comprising the steps of receiving a signal spectrum of the speech signal, filtering the signal spectrum to obtain a refined signal spectrum, determining a cross-power spectral density using the refined signal spectrum and the signal spectrum, transforming the cross-power spectral density into the time domain to obtain a cross-correlation function, and estimating the fundamental frequency of the speech signal based on the cross-correlation function.
摘要翻译：本发明提供了一种用于估计语音信号的基频的方法，包括以下步骤：接收语音信号的信号频谱，滤波信号频谱以获得精细的信号频谱，使用精细的信号频谱确定交叉功率频谱密度和信号频谱，将交叉功率谱密度变换成时域以获得互相关函数，并且基于互相关函数估计语音信号的基频。

7. 发明授权

US08787560B2 Method for determining a set of filter coefficients for an acoustic echo compensator 有权
标题翻译：用于确定声学回声补偿器的滤波器系数集合的方法
公开(公告)号：US08787560B2
公开(公告)日：2014-07-22
申请号：US12708172
申请日：2010-02-18
申请人： Markus Buck , Gerhard Schmidt , Tobias Wolff
发明人： Markus Buck , Gerhard Schmidt , Tobias Wolff
IPC分类号： H04M9/08 , G01S15/00 , H04R3/00
CPC分类号： H04R3/002 , G10L2021/02082 , H04M9/082 , H04R1/406 , H04R3/005 , H04R2430/20
摘要： The invention provides a method for determining a set of filter coefficients for an acoustic echo compensator in a beamformer arrangement. The acoustic echo compensator compensates for echoes within the beamformed signal. A plurality of sets of filter coefficients for the acoustic echo compensator is provided. Each set of filter coefficients corresponds to one of a predetermined number of steering directions of the beamformer arrangement. The predetermined number of steering directions is equal to or greater than the number of microphones in the microphone array. For a current steering direction, a current set of filter coefficients for the acoustic echo compensator is determined based on the provided sets of filter coefficients.
摘要翻译：本发明提供一种用于确定波束形成器布置中的声学回波补偿器的滤波器系数集合的方法。声回波补偿器补偿波束形成信号内的回波。提供了用于声学回声补偿器的多组滤波器系数。每组滤波器系数对应于波束形成器装置的预定数量的转向方向之一。预定数量的转向方向等于或大于麦克风阵列中的麦克风的数量。对于当前的转向方向，基于所提供的滤波器系数集合来确定用于声学回声补偿器的当前一组滤波器系数。

8. 发明授权

US08735981B2 Transistor component having an amorphous semi-isolating channel control layer 有权
标题翻译：具有非晶半隔离沟道控制层的晶体管组件
公开(公告)号：US08735981B2
公开(公告)日：2014-05-27
申请号：US12486471
申请日：2009-06-17
申请人： Gerhard Schmidt
发明人： Gerhard Schmidt
IPC分类号： H01L29/66
CPC分类号： H01L29/802 , H01L29/0696 , H01L29/408 , H01L29/432 , H01L29/66431 , H01L29/739
摘要： Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone.
摘要翻译：公开了一种具有控制结构的晶体管组件，其具有沿着沟道区沿电流流动方向延伸的非晶半导体绝缘材料的沟道控制层。

9. 发明申请

US20120174818A1 RAILWAY VEHICLE HAVING FRONT COUPLING COVER 有权
标题翻译：具有前连接盖的铁路车辆
公开(公告)号：US20120174818A1
公开(公告)日：2012-07-12
申请号：US13496731
申请日：2010-09-16
申请人： Udo Bremkamp , Gerhard Schmidt
发明人： Udo Bremkamp , Gerhard Schmidt
IPC分类号： B61D17/00
CPC分类号： B61D17/06
摘要： A railway vehicle has a cover for a front coupling of the railway vehicle. The cover is formed of at least one displaceable front hatch that can be displaced by a drive between an opened and a closed end position. A displacement of the at least one front hatch is guided such that the displacement takes place along a circular segment path about a rotary axis.
摘要翻译：铁路车辆具有用于铁路车辆的前联接器的盖。所述盖由至少一个可移位的前舱口形成，所述至少一个可移动的前舱口可以由打开位置和闭合端位置之间的驱动器移位。引导至少一个前舱口的位移，使得沿着围绕旋转轴线的圆形段路径发生位移。

10. 发明授权

US08093676B2 Semiconductor component including an edge termination having a trench and method for producing 有权
标题翻译：包括具有沟槽的边缘终端和用于制造的方法的半导体部件
公开(公告)号：US08093676B2
公开(公告)日：2012-01-10
申请号：US12166531
申请日：2008-07-02
申请人： Gerhard Schmidt
发明人： Gerhard Schmidt
IPC分类号： H01L23/58
CPC分类号： H01L21/26586 , H01L23/3178 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/41766 , H01L29/66136 , H01L29/6634 , H01L29/66727 , H01L29/7396 , H01L29/7811 , H01L29/8613 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor component includes a semiconductor body having a first side, a second side, an edge delimiting the semiconductor body in a lateral direction, an inner region and an edge region. A first semiconductor zone of a first conduction type is arranged in the inner region and in the edge region. A second semiconductor zone of a second conduction type is arranged in the inner region and adjacent to the first semiconductor zone. A trench is arranged in the edge region and has first and second sidewalls and a bottom, and extends into the semiconductor body. A doped first sidewall zone of the second conduction type is adjacent to the first sidewall of the trench. A doped second sidewall zone of the second conduction type is adjacent to the second sidewall of the trench. A doped bottom zone of the second conduction type is adjacent to the bottom of the trench. Doping concentrations of the sidewall zones are lower than a doping concentration of the bottom zone.
摘要翻译：半导体部件包括半导体本体，其具有第一侧，第二侧，在横向方向上限定半导体本体的边缘，内部区域和边缘区域。第一导电类型的第一半导体区域布置在内部区域和边缘区域中。第二导电类型的第二半导体区域布置在内部区域中且与第一半导体区域相邻。沟槽设置在边缘区域中并且具有第一和第二侧壁和底部，并延伸到半导体本体中。第二导电类型的掺杂的第一侧壁区域与沟槽的第一侧壁相邻。第二导电类型的掺杂第二侧壁区域与沟槽的第二侧壁相邻。第二导电类型的掺杂底部区域与沟槽的底部相邻。侧壁区域的掺杂浓度低于底部区域的掺杂浓度。

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