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    • 6. 发明申请
    • Method for measuring ion-implanted semiconductors with improved repeatability
    • 用于测量具有改善的重复性的离子注入半导体的方法
    • US20050195399A1
    • 2005-09-08
    • US11067961
    • 2005-02-28
    • Lena NicolaidesMira BakshiAlex SalnikJon Opsal
    • Lena NicolaidesMira BakshiAlex SalnikJon Opsal
    • G01N21/55
    • G01N21/171H01L22/12
    • The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
    • 通过采用晶圆响应的空间平均测量可以提高晶片均匀性测量的重复性。 通过增加获得测量的时间,可以显着降低噪声量,从而提高测量的重复性。 这些测量可以在晶片上的几个位置进行,以确保晶片的均匀性。 为了获得对晶圆工艺的稳定和可重复的评估,解决与损伤弛豫或不完全退火有关的不确定性,可以在远离TW测量箱的距离处执行退火衰减因子(ADF)表征。 从ADF测量和晶片响应的空间平均测量,可以获得晶片工艺的可重复评估。