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1. 发明授权

US06632483B1 Ion gun deposition and alignment for liquid-crystal applications 有权
标题翻译：用于液晶应用的离子枪沉积和对准
公开(公告)号：US06632483B1
公开(公告)日：2003-10-14
申请号：US09608798
申请日：2000-06-30
申请人： Alessandro Cesare Callegari , Praveen Chaudhari , James Patrick Doyle , Eileen Ann Galligan , Yoshimine Kato , James Andrew Lacey , Shui-Chih Alan Lien , Minhua Lu , Hiroki Nakano , Shuichi Odahara
发明人： Alessandro Cesare Callegari , Praveen Chaudhari , James Patrick Doyle , Eileen Ann Galligan , Yoshimine Kato , James Andrew Lacey , Shui-Chih Alan Lien , Minhua Lu , Hiroki Nakano , Shuichi Odahara
IPC分类号： C23C1448
CPC分类号： C23C14/3442 , C23C14/0605 , C23C14/221 , C23C14/225 , C23C14/5833 , G02F1/133734 , G02F1/13378 , Y10T428/30
摘要： The present invention includes a method of forming an aligned film on a substrate. The film is deposited and aligned in a single step by a method comprising the step of bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.
摘要翻译：本发明包括在基板上形成取向膜的方法。通过包括以指定的入射角用离子束轰击衬底以同时（a）将膜沉积到衬底上的步骤的方法在一个步骤中沉积和对准膜，以及（b）布置所述膜的原子结构至少一个预定的排列方向的胶片

2. 发明申请

US20060150912A1 Ion gun deposition and alignment for liquid-crystal applications 审中-公开
标题翻译：用于液晶应用的离子枪沉积和对准
公开(公告)号：US20060150912A1
公开(公告)日：2006-07-13
申请号：US11371551
申请日：2006-03-09
申请人： Alessandro Callegari , Praveen Chaudhari , James Doyle , Eileen Galligan , Yoshimine Kato , James Lacey , Shui-Chih Lien , Minhua Lu , Hiroki Nakano , Shuichi Odahara
发明人： Alessandro Callegari , Praveen Chaudhari , James Doyle , Eileen Galligan , Yoshimine Kato , James Lacey , Shui-Chih Lien , Minhua Lu , Hiroki Nakano , Shuichi Odahara
IPC分类号： C23C16/00
CPC分类号： C23C14/3442 , C23C14/0605 , C23C14/221 , C23C14/225 , C23C14/5833 , G02F1/133734 , G02F1/13378 , Y10T428/30
摘要： An apparatus for depositing and aligning an amorphous film in a single step, a method of forming an aligned film on a substrate in a single step by combining the deposition and alignment of an alignment layer into a single-step using ion beam processing and an amorphous film having an aligned atomic structure prepared by a method in which an aligned film is deposited and aligned in a single step are provided. The film is deposited and aligned in a single step by bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.
摘要翻译：一种用于在单个步骤中沉积和对准非晶膜的设备，通过将取向层的沉积和定向组合成单步骤使用离子束处理和非晶形的方法，在单个步骤中在衬底上形成取向膜的方法提供了通过其中在一个步骤中沉积和对准排列的膜的方法制备的具有对准的原子结构的膜。通过以指定的入射角用离子束轰击衬底，同时（a）将膜沉积到衬底上并且（b）将膜的原子结构布置在至少一个预定的排列方向。

3. 发明授权

US06836312B2 Optically transparent film, method of manufacturing optically transparent film, alignment film, and liquid crystal panel and display including alignment film 失效
标题翻译：光学透明膜，光学透明膜的制造方法，取向膜和液晶面板以及包括取向膜的显示器
公开(公告)号：US06836312B2
公开(公告)日：2004-12-28
申请号：US10236753
申请日：2002-09-06
申请人： Yoshimine Kato
发明人： Yoshimine Kato
IPC分类号： G02F113
CPC分类号： G02F1/133734
摘要： To provide an optically transparent film, a method of manufacturing the optically transparent film, an alignment film formed of the optically transparent film, and a liquid crystal panel and a display including the alignment film. The optically transparent film includes amorphous fluorocarbon. Preferably, the integrated transmittance of the optically transparent film is in the visible region is about 50% or higher when the optically transparent film has a film thickness of about 100 nm. The amorphous fluorocarbon has an atomic ratio between hydrogen atoms and fluorine atoms of about 1/9 or higher, and the transmittance in the visible region can be controlled by controlling the atomic ratio of fluorine atoms.
摘要翻译：为了提供光学透明膜，制造光学透明膜的方法，由光学透明膜形成的取向膜，以及液晶面板和包括取向膜的显示器。光学透明膜包括无定形碳氟化合物。优选地，当光学透明膜的膜厚度为约100nm时，光学透明膜在可见光区域的积分透射率为约50％以上。无定形碳氟化合物具有约1/9以上的氢原子和氟原子的原子比，可以通过控制氟原子的原子比来控制可见光区域的透射率。

4. 发明授权

US5030512A Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US5030512A
公开(公告)日：1991-07-09
申请号：US551973
申请日：1990-07-12
申请人： Yoshimine Kato , Teruhisa Shimizu , Shinji Takayama , Hiroshi Tanaka
发明人： Yoshimine Kato , Teruhisa Shimizu , Shinji Takayama , Hiroshi Tanaka
IPC分类号： G11B11/10 , G11B11/105
CPC分类号： G11B11/10589 , Y10S428/90 , Y10T428/265
摘要： A first and a second magnetic layer are deposited on a substrate. The first magnetic layer has high magneto-optical effect at short wavelengths, but low perpendicular anisotropy. The second magnetic layer has low magneto-optical effect at short wavelengths, but high perpendicular anisotropy. The magnetic exchange coupling between the two magnetic layers results in a recording medium which has strong perpendicular anisotropy and high magneto-optical effect, even at short wavelengths.

5. 发明授权

US5532184A Method of fabricating a semiconductor device using quantum dots or wires 失效
标题翻译：使用量子点或导线制造半导体器件的方法
公开(公告)号：US5532184A
公开(公告)日：1996-07-02
申请号：US523829
申请日：1995-09-06
申请人： Yoshimine Kato
发明人： Yoshimine Kato
IPC分类号： H01L21/265 , H01L21/335 , H01L29/06 , H01L29/775 , H01L29/80 , H01L21/20
CPC分类号： B82Y10/00 , H01L29/66469 , H01L29/775 , Y10S438/962
摘要： An undoped GaAs layer is epitaxially grown on a substrate in a crystal growth device. An undoped Al.sub.x Ga.sub.1-x As layer is then epitaxially grown to form an undoped hetero-junction structure. After this, a sample is transferred to a focused ion beam (FIB) apparatus. A dopant ion beam is focused and implanted into the Al.sub.x Ga.sub.1-x As layer in a dot-like or wire-like pattern so that it does not extend to the undoped GaAs layer or channel layer, and a zero- or one-dimensional carrier gas 8 is generated in the channel layer. The invention allows maskless ion implantation, and makes the fabrication process much easier because quantum wires and dots are drawn, patterned or formed directly by ion implantation. In addition, no etching process is required, so quantum wires and quantum dots can be fabricated precisely. Furthermore, since there is no influence of the impurity scattering and damage by ion implantation in the channel where electrons and holes are transported, high mobility is obtained and a high-speed device can be fabricated. The invention overcomes the problem of crystal damage in prior processes that required chemical etching and ion implantation.
摘要翻译：在晶体生长装置中的衬底上外延生长未掺杂的GaAs层。然后外延生长未掺杂的Al x Ga 1-x As层以形成未掺杂的异质结结构。之后，将样品转移到聚焦离子束（FIB）装置。掺杂剂离子束以点状或线状图案被聚焦并注入到Al x Ga 1-x As层中，使得它不延伸到未掺杂的GaAs层或沟道层，并且零或一维载气8 在通道层中产生。本发明允许无掩模离子注入，并且使得制造过程更容易，因为量子线和点被直接通过离子注入来绘制，图案化或形成。此外，不需要蚀刻工艺，因此可以精确地制造量子线和量子点。此外，由于在输送电子和空穴的通道中不存在杂质散射和离子注入损伤的影响，因此可以获得高迁移率，并且可以制造高速器件。本发明克服了以前需要化学蚀刻和离子注入的工艺中晶体损伤的问题。

6. 发明授权

US5479027A Semiconductor device having a channel for a zero-or one-dimensional carrier gas 失效
标题翻译：具有用于零或一维载气的通道的半导体器件
公开(公告)号：US5479027A
公开(公告)日：1995-12-26
申请号：US172446
申请日：1993-12-22
申请人： Yoshimine Kato
发明人： Yoshimine Kato
IPC分类号： H01L21/265 , H01L21/335 , H01L29/06 , H01L29/775 , H01L29/80 , H01L27/12
CPC分类号： B82Y10/00 , H01L29/66469 , H01L29/775 , Y10S438/962
摘要： An undoped GaAs layer is epitaxially grown on a substrate in a crystal growth device. An undoped Al.sub.x Ga.sub.1-x As layer is then epitaxially grown to form an undoped hetero-junction structure. After this, a sample is transferred to a focused ion beam (FIB) apparatus. A dopant ion beam is focused and implanted into the Al.sub.x Ga .sub.1-x As layer in a dot-like or wire-like pattern so that it does not extend to the undoped GaAs layer or channel layer, and a zero- or one-dimensional carrier gas 8 is generated in the channel layer. The invention allows maskless ion implantation, and makes the fabrication process much easier because quantum wires and dots are drawn, patterned or formed directly by ion implantation. In addition, no etching process is required, so quantum wires and quantum dots can be fabricated precisely. Furthermore, since there is no influence of the impurity scattering and damage by ion implantation in the channel where electrons and holes are transported, high mobility is obtained and a high-speed device can be fabricated. The invention overcomes the problem of crystal damage in prior processes that required chemical etching and ion implantation.
摘要翻译：在晶体生长装置中的衬底上外延生长未掺杂的GaAs层。然后外延生长未掺杂的Al x Ga 1-x As层以形成未掺杂的异质结结构。之后，将样品转移到聚焦离子束（FIB）装置。掺杂剂离子束以点状或线状图案聚焦并注入到Al x Ga 1-x As层中，使得其不延伸到未掺杂的GaAs层或沟道层，并且零或一维载气 8在通道层中产生。本发明允许无掩模离子注入，并且使得制造过程更容易，因为量子线和点被直接通过离子注入来绘制，图案化或形成。此外，不需要蚀刻工艺，因此可以精确地制造量子线和量子点。此外，由于在输送电子和空穴的通道中不存在杂质散射和离子注入损伤的影响，因此可以获得高迁移率，并且可以制造高速器件。本发明克服了以前需要化学蚀刻和离子注入的工艺中晶体损伤的问题。

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