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1. 发明授权

US5196722A Shadow ram cell having a shallow trench eeprom 失效
标题翻译：阴影柱塞细胞具有浅沟eeprom
公开(公告)号：US5196722A
公开(公告)日：1993-03-23
申请号：US848913
申请日：1992-03-12
申请人： Albert S. Bergendahl , Claude L. Bertin , John E. Cronin , Howard L. Kalter , Donald M. Kenney , Chung H. Lam , Hsing-San Lee
发明人： Albert S. Bergendahl , Claude L. Bertin , John E. Cronin , Howard L. Kalter , Donald M. Kenney , Chung H. Lam , Hsing-San Lee
IPC分类号： H01L27/105 , H01L27/108 , H01L29/788
CPC分类号： H01L27/10829 , H01L27/105 , H01L29/7881
摘要： A semiconductor device memory array formed on a semiconductor substrate comprising a multiplicity of field effect transistor DRAM devices disposed in array is disclosed. Each of the DRAM devices is paired with a non-volatile EEPROM cell and the EEPROM cells are disposed in a shallow trench in the semiconductor substrate running between the DRAM devices such that each DRAM-EEPROM pair shares a common drain diffusion. The EEPROM cells are arranged in the trench such that there are discontinuous laterally disposed floating gate polysilicon electrodes and continuous horizontally disposed program and recall gate polysilicon electrodes. The floating gate is separated from the program and recall gates by a silicon rich nitride. The array of the invention provides high density shadow RAMs. Also disclosed are methods for the fabrication of devices of the invention.
摘要翻译：公开了一种形成在半导体衬底上的半导体器件存储器阵列，其包括设置成阵列的多个场效应晶体管DRAM器件。每个DRAM器件与非易失性EEPROM单元配对，并且EEPROM单元被布置在运行在DRAM器件之间的半导体衬底中的浅沟槽中，使得每个DRAM-EEPROM对共享共同的漏极扩散。 EEPROM单元布置在沟槽中，使得存在不连续的侧向设置的浮栅多晶硅电极和连续的水平布置的程序和调用栅极多晶硅电极。浮动栅极与程序分离，并通过富含硅的氮化物来调用栅极。本发明的阵列提供高密度影子RAM。还公开了用于制造本发明的装置的方法。

2. 发明授权

US5399516A Method of making shadow RAM cell having a shallow trench EEPROM 失效
标题翻译：制造具有浅沟槽EEPROM的阴影RAM单元的方法
公开(公告)号：US5399516A
公开(公告)日：1995-03-21
申请号：US930797
申请日：1992-09-21
申请人： Albert S. Bergendahl , Claude L. Bertin , John E. Cronin , Howard L. Kalter , Donald M. Kenney , Chung H. Lam , Hsing-San Lee
发明人： Albert S. Bergendahl , Claude L. Bertin , John E. Cronin , Howard L. Kalter , Donald M. Kenney , Chung H. Lam , Hsing-San Lee
IPC分类号： H01L27/10 , H01L21/8239 , H01L21/8242 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/308
CPC分类号： H01L29/7882 , H01L27/105 , H01L27/1052 , H01L27/10829 , H01L27/115
摘要： A semiconductor device memory array formed on a semiconductor substrate comprising a multiplicity of field effect transistor DRAM devices disposed in array is disclosed. Each of the DRAM devices is paired with a non-volatile EEPROM cell and the EEPROM cells are disposed in a shallow trench in the semiconductor substrate running between the DRAM devices such that each DRAM-EEPROM pair shares a common drain diffusion. The EEPROM cells are arranged in the trench such that there are discontinuous laterally disposed floating gate polysilicon electrodes and continuous horizontally disposed program and recall gate polysilicon electrodes. The floating gate is separated from the program and recall gates by a silicon rich nitride. The array of the invention provides high density shadow RAMs. Also disclosed are methods for the fabrication of devices of the invention.
摘要翻译：公开了一种形成在半导体衬底上的半导体器件存储器阵列，其包括设置成阵列的多个场效应晶体管DRAM器件。每个DRAM器件与非易失性EEPROM单元配对，并且EEPROM单元被布置在运行在DRAM器件之间的半导体衬底中的浅沟槽中，使得每个DRAM-EEPROM对共享共同的漏极扩散。 EEPROM单元布置在沟槽中，使得存在不连续的侧向设置的浮栅多晶硅电极和连续的水平布置的程序和调用栅极多晶硅电极。浮动栅极与程序分离，并通过富含硅的氮化物来调用栅极。本发明的阵列提供高密度影子RAM。还公开了用于制造本发明的装置的方法。

3. 发明授权

US08273407B2 Systems and methods for forming magnetic nanocomposite materials 失效
标题翻译：用于形成磁性纳米复合材料的系统和方法
公开(公告)号：US08273407B2
公开(公告)日：2012-09-25
申请号：US11668293
申请日：2007-01-29
申请人： Albert S. Bergendahl , Paul C. Castrucci , Daniel J. Fleming , Danny Tongsan Xiao
发明人： Albert S. Bergendahl , Paul C. Castrucci , Daniel J. Fleming , Danny Tongsan Xiao
IPC分类号： C23C16/02
CPC分类号： C23C16/30 , B82Y25/00 , C23C14/0688 , C23C14/22 , C23C16/4417 , H01F1/0063 , H01F10/007 , H01F41/18 , H01F41/205 , H01F41/22
摘要： A method of fabricating a film of magnetic nanocomposite particles including depositing isolated clusters of magnetic nanoparticles onto a substrate surface and coating the isolated clusters of magnetic nanoparticles with an insulator coating. The isolated clusters of magnetic nanoparticles have a dimension in the range between 1 and 300 nanometers and are separated from each other by a distance in the range between 1 and 50 nanometers. By employing PVD, ablation, and CVD techniques the range of useful film thicknesses is extended to 10-1000 nm, suitable for use in wafer based processing. The described methods for depositing the magnetic nanocomposite thin films are compatible with conventional IC wafer and Integrated Passive Device fabrication.
摘要翻译：一种制造磁性纳米复合材料颗粒的膜的方法，包括将孤立的磁性纳米颗粒簇沉积在基材表面上，并用绝缘体涂层涂覆分离的磁性纳米颗粒簇。孤立的磁性纳米颗粒簇的尺寸范围在1到300纳米之间，并且在1和50纳米之间的范围内彼此分开。通过使用PVD，烧蚀和CVD技术，有用的膜厚度的范围扩展到10-1000nm，适用于基于晶片的处理。所描述的用于沉积磁性纳米复合薄膜的方法与常规IC晶片和集成无源器件制造兼容。

4. 发明授权

US4724043A Process for forming a master mold for optical storage disks 失效
标题翻译：用于形成光存储盘的主模的工艺
公开(公告)号：US4724043A
公开(公告)日：1988-02-09
申请号：US943845
申请日：1986-12-24
申请人： Albert S. Bergendahl , Paul E. Cade , Norman T. Gonnella , Francis S. Luecke , Kurt E. Petersen
发明人： Albert S. Bergendahl , Paul E. Cade , Norman T. Gonnella , Francis S. Luecke , Kurt E. Petersen
IPC分类号： G11B7/26 , G11B23/00 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G11B23/0057 , G11B7/261
摘要： A method for forming a master mold for optical storage disks includes thermally growing an oxide or nitride layer on a semiconductor wafer. The thermally grown layer is then coated with a photoresist. The photoresist is exposed to a laser beam to form a data pattern and developed. The oxide or nitride under the developed pattern is etched and the photoresist stripped to provide a semiconductor master mold for optical disks.
摘要翻译：用于形成用于光学存储盘的母模的方法包括在半导体晶片上热生长氧化物或氮化物层。然后用光致抗蚀剂涂覆热生长层。将光致抗蚀剂暴露于激光束以形成数据图案并显影。在显影图案下的氧化物或氮化物被蚀刻并且光致抗蚀剂剥离以提供用于光盘的半导体母模。

5. 发明申请

US20070178229A1 SYSTEMS AND METHODS FOR FORMING MAGNETIC NANOCOMPOSITE MATERIALS 失效
标题翻译：用于形成磁性纳米复合材料的系统和方法
公开(公告)号：US20070178229A1
公开(公告)日：2007-08-02
申请号：US11668293
申请日：2007-01-29
申请人： Albert S. Bergendahl , Paul C. Castrucci , Daniel J. Fleming , T. D. Xiao
发明人： Albert S. Bergendahl , Paul C. Castrucci , Daniel J. Fleming , T. D. Xiao
IPC分类号： B05D1/12 , B05D1/36 , C23C16/00 , B05D3/00 , B05D5/12 , B05D7/00 , C23C14/00 , B29C71/04 , C23C14/32
CPC分类号： C23C16/30 , B82Y25/00 , C23C14/0688 , C23C14/22 , C23C16/4417 , H01F1/0063 , H01F10/007 , H01F41/18 , H01F41/205 , H01F41/22
摘要： A method of fabricating a film of magnetic nanocomposite particles including depositing isolated clusters of magnetic nanoparticles onto a substrate surface and coating the isolated clusters of magnetic nanoparticles with an insulator coating. The isolated clusters of magnetic nanoparticles have a dimension in the range between 1 and 300 nanometers and are separated from each other by a distance in the range between 1 and 50 nanometers. By employing PVD, ablation, and CVD techniques the range of useful film thicknesses is extended to 10-1000 nm, suitable for use in wafer based processing. The described methods for depositing the magnetic nanocomposite thin films are compatible with conventional IC wafer and Integrated Passive Device fabrication.
摘要翻译：一种制造磁性纳米复合材料颗粒的膜的方法，包括将孤立的磁性纳米颗粒簇沉积在基材表面上，并用绝缘体涂层涂覆分离的磁性纳米颗粒簇。孤立的磁性纳米颗粒簇的尺寸范围在1到300纳米之间，并且在1和50纳米之间的范围内彼此分开。通过使用PVD，烧蚀和CVD技术，有用的膜厚度的范围扩展到10-1000nm，适用于基于晶片的处理。所描述的用于沉积磁性纳米复合薄膜的方法与常规IC晶片和集成无源器件制造兼容。

6. 发明授权

US5635285A Method and system for controlling the relative size of images formed in light-sensitive media 失效
标题翻译：用于控制在光敏介质中形成的图像的相对尺寸的方法和系统
公开(公告)号：US5635285A
公开(公告)日：1997-06-03
申请号：US487368
申请日：1995-06-07
申请人： Paul E. Bakeman, Jr. , Albert S. Bergendahl
发明人： Paul E. Bakeman, Jr. , Albert S. Bergendahl
IPC分类号： G03F1/00 , G03F7/20 , B32B3/00
CPC分类号： G03F7/70558 , G03F7/20 , G03F7/2002 , G03F7/70308 , G03F7/70333 , G03F7/70466 , Y10S428/929 , Y10T428/24628 , Y10T428/24669 , Y10T428/24802 , Y10T428/249921 , Y10T428/31504
摘要： A method of exposing a radiation-sensitive medium through a mask and using an imaging system having a given depth of focus to control for pattern dependent distortion. The steps comprise: providing the radiation-sensitive medium within the depth of focus of the imaging system; providing radiation to the radiation-sensitive medium through the mask; providing the radiation-sensitive medium fully outside the depth of focus of the imaging system; and providing radiation to the radiation-sensitive medium through the mask. Corrections are automatically made by providing the radiation-sensitive medium fully outside the depth of focus of the imaging system, since in that regime the mask operates as a grey-scale mask, with the amount of light passing through any region of the mask dependent on the transmission of the masking pattern in that region.
摘要翻译：一种通过掩模曝光辐射敏感介质并使用具有给定焦深的成像系统来控制图形相关失真的方法。这些步骤包括：在成像系统的焦点深度内提供辐射敏感介质; 通过掩模向辐射敏感介质提供辐射; 将辐射敏感介质完全放置在成像系统的焦点深度之外; 并通过掩模向辐射敏感介质提供辐射。通过将辐射敏感介质完全设置在成像系统的焦深之外自动进行校正，因为在该状态下，掩模作为灰度掩模进行操作，其中通过掩模的任何区域的光量取决于在该区域中的掩模图案的传输。

7. 发明授权

US4399205A Method and apparatus for determining photomask alignment 失效
标题翻译：用于确定光掩模对准的方法和装置
公开(公告)号：US4399205A
公开(公告)日：1983-08-16
申请号：US325942
申请日：1981-11-30
申请人： Albert S. Bergendahl
发明人： Albert S. Bergendahl
IPC分类号： H01L21/68 , G03F7/20 , H01L21/027 , H01L21/66 , H01L23/544 , G03C5/06
CPC分类号： H01L22/34 , G03F7/70633 , H01L22/12
摘要： This describes a method for electrically evaluating the overlay error of a photolithographic tool. In this process a reusable substrate bearing a fixed reference mark has a photolithographic tool defined metal liftoff pattern formed thereon to provide a pair of conductive lines by measuring the relative resistance of the lines with respect to one another the alignment of the tool defined pattern with regard to the reference mark may be determined and thus the overlay error of the tool established.The reference mask is formed of an L-shaped recess in a substrate so that when a metal structure is deposited on the surface of the substrate across the mask it will be made discontinuous by the mark. To form the metal structure photoresist is applied to the substrate and is exposed and developed in a L-shaped liftoff mask pattern larger than the reference mark and arranged on both sides of the mask so that when a conductive layer is deposited over the exposed and developed photoresist the remaining photoresist and overlying conductor subsequently removed, there will remain on the substrate surface a pair of conductive lines. One reference edge of this conductive line is defined by the recess forming the reference mask and the second edge is defined by the lifting off of the developed photoresist created by the photo tool defined liftoff pattern. By measuring the resistance of predetermined segments of the deposited metal remaining on the substrate the difference in line width caused by misalignment of the photo tool with respect to the reference mask can be determined. Any such difference in linewidth represents the overlay mismatch caused by the tool. After measurements are completed the conductive lines can be stripped from the substrate and the substrate reused.
摘要翻译：这描述了一种用于电学评估光刻工具的覆盖误差的方法。在该过程中，具有固定参考标记的可重复使用的基板具有形成在其上的光刻工具限定的金属剥离图案，以通过相对于彼此测量相对于工具限定图案的对准来提供一对导电线可以确定参考标记，从而建立工具的重叠错误。参考掩模由衬底中的L形凹部形成，使得当金属结构沉积在衬底的表面上并穿过掩模时，其将被标记不连续。为了形成金属结构，将光致抗蚀剂施加到基板上，并以大于参考标记的L形剥离掩模图案曝光和显影，并且布置在掩模的两侧，使得当导电层沉积在暴露和显影光致抗蚀剂剩余的光致抗蚀剂和上覆导体随后被去除，在衬底表面上将保留一对导电线。该导电线的一个参考边缘由形成参考掩模的凹槽限定，并且第二边缘由通过照相工具限定的剥离图案产生的显影光致抗蚀剂的剥离来限定。通过测量残留在基板上的沉积金属的预定段的电阻，可以确定由于照相工具相对于参考掩模的未对准而导致的线宽的差异。线宽中的任何这种差异表示由工具引起的重叠不匹配。测量完成后，导电线可以从衬底剥离，衬底重新使用。

8. 发明授权

US4394437A Process for increasing resolution of photolithographic images 失效
标题翻译：提高光刻图像分辨率的方法
公开(公告)号：US4394437A
公开(公告)日：1983-07-19
申请号：US305056
申请日：1981-09-24
申请人： Albert S. Bergendahl , Mark C. Hakey , John P. Wilson
发明人： Albert S. Bergendahl , Mark C. Hakey , John P. Wilson
IPC分类号： G03F7/26 , G03F7/095 , G03F7/20 , H01L21/027 , G03C5/00
CPC分类号： G03F7/095
摘要： The present invention describes conformable masking techniques which can be successfully made and used in a practical manufacturing environment while providing increased resolution of photolithographic images while eliminating all manner of defects that might presently be encountered in the masks currently used in the semiconductor industry.In the present invention a body is first coated with a positive photoresist overcoated with a conformable mask which is exposed through a fixed mask and developed to define a replica of the fixed mask, together with all its defects. The underlying photoresist is then exposed to light through developed openings in the conformable mask. The conformable mask is then stripped and a new conformable mask laid down. This new conformable mask is now exposed through a second fixed mask having the same image as the first fixed mask, but presumably with different defects and developed to define a replica of the second mask. The underlying photoresist is again exposed through the second conformable mask and developed. As a result of using two independently defined conformable masks clear image defects in the fixed masks are prevented from being reproduced in the underlying photoresist and are not doubly exposed. Only desired regions in the underlying photoresist are doubly exposed.
摘要翻译：本发明描述了可以在实际制造环境中成功制造和使用的适形掩蔽技术，同时提供增加的光刻图像分辨率，同时消除目前在半导体工业中使用的掩模中目前可能遇到的各种缺陷。在本发明中，首先用正光致抗蚀剂涂覆正型光致抗蚀剂，其中涂覆有适形掩模，其通过固定掩模曝光并显影以限定固定掩模的复制品及其所有缺陷。然后将底层光致抗蚀剂通过适形掩模中的显影开口曝光。然后将适形的面膜剥离，并铺设新的合适的面膜。这种新的适形掩模现在通过具有与第一固定掩模相同的图像的第二固定掩模曝光，但是可能具有不同的缺陷并且显影以限定第二掩模的复制品。底层光致抗蚀剂再次通过第二适形掩模曝光并显影。作为使用两个独立定义的适形掩模的结果，防止固定掩模中的清晰图像缺陷在下面的光致抗蚀剂中再现，并且不会被双重曝光。只有底层光致抗蚀剂中的所需区域被双重曝光。

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