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1. 发明申请

US20050158945A1 Memory cell and method for fabricating it 有权
标题翻译：记忆单元及其制造方法
公开(公告)号：US20050158945A1
公开(公告)日：2005-07-21
申请号：US10980069
申请日：2004-11-03
申请人： Albert Birner , Matthias Foerster , Thomas Hecht , Michael Stadtmueller , Andreas Orth
发明人： Albert Birner , Matthias Foerster , Thomas Hecht , Michael Stadtmueller , Andreas Orth
IPC分类号： H01L21/8239 , H01L21/334 , H01L21/8229 , H01L21/8242 , H01L29/94
CPC分类号： H01L29/66181 , H01L29/945
摘要： The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).
摘要翻译：本发明提供了一种用于制造存储单元的方法，提供了一种衬底（101），蚀刻到衬底（101）中的沟槽型凹陷（102），在沟槽中非保形地沉积的阻挡层（103）型凹陷（102），在沟槽型凹部（102）的内部区域上生长的晶粒元素（104），沉积在晶粒元素的表面上的介电层（202）和沟槽的内部区域型凹陷，并且导电层沉积在电介质层上，晶粒元素（104）选择性地生长在形成下部区域的电极区域（301）中的沟槽型凹陷（102）的内部区域（105）的沟槽型凹陷（102）和在形成沟槽型凹陷（102）的上部区域的凸缘区域（302）中继续生长的非晶硅层。

2. 发明授权

US07144770B2 Memory cell and method for fabricating it 有权
标题翻译：记忆单元及其制造方法
公开(公告)号：US07144770B2
公开(公告)日：2006-12-05
申请号：US10980069
申请日：2004-11-03
申请人： Albert Birner , Matthias Foerster , Thomas Hecht , Michael Stadtmueller , Andreas Orth
发明人： Albert Birner , Matthias Foerster , Thomas Hecht , Michael Stadtmueller , Andreas Orth
IPC分类号： H01L21/8242
CPC分类号： H01L29/66181 , H01L29/945
摘要： The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).
摘要翻译：本发明提供了一种用于制造存储单元的方法，提供了一种衬底（101），蚀刻到衬底（101）中的沟槽型凹陷（102），在沟槽中非保形地沉积的阻挡层（103）型凹陷（102），在沟槽型凹部（102）的内部区域上生长的晶粒元素（104），沉积在晶粒元素的表面上的介电层（202）和沟槽的内部区域型凹陷，并且导电层沉积在电介质层上，晶粒元素（104）选择性地生长在形成下部区域的电极区域（301）中的沟槽型凹陷（102）的内部区域（105）的沟槽型凹陷（102）和在形成沟槽型凹陷（102）的上部区域的凸缘区域（302）中继续生长的非晶硅层。

3. 发明授权

US10411759B2 System comprising a capacitive information carrier for acquiring information 有权
公开(公告)号：US10411759B2
公开(公告)日：2019-09-10
申请号：US13703467
申请日：2011-06-10
申请人： Jan Thiele , Sascha Voigt , Thoralt Franz , Matthias Foerster , André Kreutzer
发明人： Jan Thiele , Sascha Voigt , Thoralt Franz , Matthias Foerster , André Kreutzer
IPC分类号： H04B5/00 , G06K7/08 , G06K19/067 , G06K19/077
摘要： The invention describes a system comprising a capacitive information carrier, wherein an electrically conductive layer is arranged on an electrically non-conductive substrate, and a surface sensor, wherein the information carrier is in contact with the surface sensor. Furthermore, the invention comprises a process for acquiring information, comprising a capacitive information carrier, a capacitive surface sensor, a contact between the two elements and an interaction which makes a touch structure of the information carrier evaluable for a data-processing system connected to the surface sensor and can trigger events associated with said information carrier.

4. 发明申请

US20130115878A1 SYSTEM COMPRISING A CAPACITIVE INFORMATION CARRIER FOR ACQUIRING INFORMATION 审中-公开
标题翻译：包含用于获取信息的电容信息载体的系统
公开(公告)号：US20130115878A1
公开(公告)日：2013-05-09
申请号：US13703467
申请日：2011-06-10
申请人： Jan Thiele , Sascha Voigt , Thoralt Franz , Matthias Foerster , André Kreutzer
发明人： Jan Thiele , Sascha Voigt , Thoralt Franz , Matthias Foerster , André Kreutzer
IPC分类号： H04B5/00
CPC分类号： H04B5/0012 , G06K7/081 , G06K7/089 , G06K19/067 , G06K19/07788
摘要： The invention describes a system comprising a capacitive information carrier, wherein an electrically conductive layer is arranged on an electrically non-conductive substrate, and a surface sensor, wherein the information carrier is in contact with the surface sensor. Furthermore, the invention comprises a process for acquiring information, comprising a capacitive information carrier, a capacitive surface sensor, a contact between the two elements and an interaction which makes a touch structure of the information carrier evaluable for a data-processing system connected to the surface sensor and can trigger events associated with said information carrier.
摘要翻译：本发明描述了一种包括电容信息载体的系统，其中导电层布置在非导电基底上，以及表面传感器，其中信息载体与表面传感器接触。此外，本发明包括一种用于获取信息的过程，其包括电容性信息载体，电容式表面传感器，两个元件之间的接触以及相互作用，其使信息载体的触摸结构对于连接到该信息载体的数据处理系统可评估表面传感器并且可以触发与所述信息载体相关联的事件。

5. 发明申请

US20110253789A1 IDENTIFICATION SYSTEM AND APPLICATIONS 有权
标题翻译：识别系统和应用
公开(公告)号：US20110253789A1
公开(公告)日：2011-10-20
申请号：US13127512
申请日：2009-11-04
申请人： Jan Thiele , Sascha Voigt , Andre Kreutzer , Matthias Foerster
发明人： Jan Thiele , Sascha Voigt , Andre Kreutzer , Matthias Foerster
IPC分类号： G06K19/067 , G06K7/01 , G06K7/06 , G06K19/02
CPC分类号： G06K19/067 , B42D25/00 , B42D25/305 , G06K7/081
摘要： The invention relates to an identification system, comprising an information carrier or a group of such information carriers, which allow a clear association of information. The invention further relates to the use of said information carriers, and to a device for reading said information carriers, wherein the information carriers are associated with a random action of a data processing system by way of the structured information layer thereof or can trigger such action. The invention furthermore relates to information carriers for access control systems, payment systems, ticket systems, and marketing application. According to the invention, overlaps of the information layer can be provided by applying additional layers, which achieve several advantages according to the invention, such as optically rendering the information layer unrecognizable, and resulting increased safety of the information carrier against manipulation. In addition, the information layers can be applied in an absolutely level and thin manner onto the carrier material, which enables unlimited further processing.
摘要翻译：本发明涉及一种识别系统，包括信息载体或一组这样的信息载体，其允许明确的信息关联。本发明还涉及所述信息载体的使用以及用于读取所述信息载体的装置，其中信息载体通过其结构化信息层与数据处理系统的随机动作相关联，或者可以触发这种动作。本发明还涉及用于访问控制系统，支付系统，票证系统和营销应用的信息载体。根据本发明，可以通过应用附加层来提供信息层的重叠，这些层实现了根据本发明的若干优点，例如光学地使信息层无法识别，并且导致信息载体对操纵的增加的安全性。此外，信息层可以以绝对水平和薄的方式应用到载体材料上，这使得无限制的进一步处理。

6. 发明申请

US20050148171A1 Method for filling trench and relief geometries in semiconductor structures 有权
标题翻译：在半导体结构中填充沟槽和浮雕几何的方法
公开(公告)号：US20050148171A1
公开(公告)日：2005-07-07
申请号：US11010186
申请日：2004-12-10
申请人： Dietmar Temmler , Barbara Lorenz , Daniel Koehler , Matthias Foerster
发明人： Dietmar Temmler , Barbara Lorenz , Daniel Koehler , Matthias Foerster
IPC分类号： H01L21/28 , H01L21/02 , H01L21/311 , H01L21/334 , H01L21/4763 , H01L21/76 , H01L21/762 , H01L21/768 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/76877 , H01L21/31116 , H01L21/76224 , H01L21/76837 , H01L21/76843 , H01L21/76865 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/84 , H01L29/66181
摘要： A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the trench structure is subsequently performed in order to produce a V-profile.
摘要翻译：一种方法教导了如何填充形成在半导体衬底中的沟槽结构。沟槽结构在具有高一致性和最小粗糙度的第一初级填充层的第一沉积工艺中被涂覆。随后进行达到沟槽结构的预定深度的V蚀刻，以便产生V形轮廓。

7. 发明授权

US08622307B2 Identification system and applications 有权
标题翻译：识别系统和应用
公开(公告)号：US08622307B2
公开(公告)日：2014-01-07
申请号：US13127512
申请日：2009-11-04
申请人： Jan Thiele , Sascha Voigt , Andre Kreutzer , Matthias Foerster
发明人： Jan Thiele , Sascha Voigt , Andre Kreutzer , Matthias Foerster
IPC分类号： G06K19/02
CPC分类号： G06K19/067 , B42D25/00 , B42D25/305 , G06K7/081
摘要： The invention relates to an identification system, comprising an information carrier or a group of such information carriers, which allow a clear association of information. The invention further relates to the use of said information carriers, and to a device for reading said information carriers, wherein the information carriers are associated with a random action of a data processing system by way of the structured information layer thereof or can trigger such action. The invention furthermore relates to information carriers for access control systems, payment systems, ticket systems, and marketing application. According to the invention, overlaps of the information layer can be provided by applying additional layers, which achieve several advantages according to the invention, such as optically rendering the information layer unrecognizable, and resulting increased safety of the information carrier against manipulation. In addition, the information layers can be applied in an absolutely level and thin manner onto the carrier material, which enables unlimited further processing.
摘要翻译：本发明涉及一种识别系统，包括信息载体或一组这样的信息载体，其允许明确的信息关联。本发明还涉及所述信息载体的使用以及用于读取所述信息载体的装置，其中信息载体通过其结构化信息层与数据处理系统的随机动作相关联，或者可以触发这种动作。本发明还涉及用于访问控制系统，支付系统，票证系统和营销应用的信息载体。根据本发明，可以通过应用附加层来提供信息层的重叠，这些层实现了根据本发明的若干优点，例如光学地使信息层无法识别，并且导致信息载体对操纵的增加的安全性。此外，信息层可以以绝对水平和薄的方式应用到载体材料上，这使得无限制的进一步处理。

8. 发明授权

US07265025B2 Method for filling trench and relief geometries in semiconductor structures 有权
标题翻译：在半导体结构中填充沟槽和浮雕几何的方法
公开(公告)号：US07265025B2
公开(公告)日：2007-09-04
申请号：US11010186
申请日：2004-12-10
申请人： Dietmar Temmler , Barbara Lorenz , Daniel Koehler , Matthias Foerster
发明人： Dietmar Temmler , Barbara Lorenz , Daniel Koehler , Matthias Foerster
IPC分类号： H01L21/76
CPC分类号： H01L21/76877 , H01L21/31116 , H01L21/76224 , H01L21/76837 , H01L21/76843 , H01L21/76865 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/84 , H01L29/66181
摘要： A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the trench structure is subsequently performed in order to produce a V-profile.
摘要翻译：一种方法教导了如何填充形成在半导体衬底中的沟槽结构。沟槽结构在具有高一致性和最小粗糙度的第一初级填充层的第一沉积工艺中被涂覆。随后进行达到沟槽结构的预定深度的V蚀刻，以便产生V形轮廓。

9. 发明申请

US20130284578A1 INFORMATION CARRIER AND SYSTEM FOR ACQUIRING INFORMATION 审中-公开
标题翻译：信息载体和获取信息的系统
公开(公告)号：US20130284578A1
公开(公告)日：2013-10-31
申请号：US13825159
申请日：2011-09-20
申请人： Matthias Foerster , Andre Kreutzer , Jan Thiele , Sascha Voigt , Thoralt Franz
发明人： Matthias Foerster , Andre Kreutzer , Jan Thiele , Sascha Voigt , Thoralt Franz
IPC分类号： H03K17/96
CPC分类号： H03K17/9622 , G06K7/081 , G06K19/067
摘要： The invention describes a capacitive information carrier in which at least one electrically conductive touch structure is arranged on an electrically non-conductive substrate. The invention also comprises a system and method for acquiring information, consisting of a capacitive information carrier, a capacitive area sensor, a contact between the two elements and interaction which makes the touch structure of the information carrier evaluable for a data processing system connected to the area sensor and can trigger events associated with the information carrier.
摘要翻译：本发明描述了一种电容性信息载体，其中至少一个导电触摸结构布置在非导电基底上。本发明还包括一种用于获取信息的系统和方法，包括电容性信息载体，电容区域传感器，两个元件之间的接触以及使得信息载体的触摸结构对于连接到该信息载体的数据处理系统可评估的交互区域传感器，并且可以触发与信息载体相关联的事件。

10. 发明授权

US08497850B2 System and method for retrieving information from an information carrier by means of a capacitive touch screen 有权
公开(公告)号：US08497850B2
公开(公告)日：2013-07-30
申请号：US13576976
申请日：2011-11-29
申请人： Matthias Foerster , Sascha Voigt , Jan Thiele , Andre Kreutzer
发明人： Matthias Foerster , Sascha Voigt , Jan Thiele , Andre Kreutzer
IPC分类号： G06F3/045
CPC分类号： G06F3/0416 , G06F3/016 , G06F3/044 , G06F3/0488 , G06F2203/04809 , G06K7/081 , G06K7/089 , G06K19/067
摘要： The present invention relates to a method comprising providing one or more information carrier(s) with a dielectric and/or conductive pattern and a detection device having a capacitive touch screen and inducing an interaction between the information carrier and the touch screen, wherein the interaction is based on a difference in the dielectric coefficient and/or the conductivity of the pattern and generates a touch signal and wherein the interaction is induced by relative motion between the information carrier and the touch screen. The invention further relates to a system comprising an information carrier comprising a dielectric and/or conductive pattern which encodes information and a detection device having a touch screen; the detection device is able to decode the information upon interaction between the information carrier and the touch screen, wherein the interaction is caused by a difference in the dielectric coefficient and/or the conductivity of the pattern.

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