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    • 5. 发明申请
    • METHOD OF FORMING SOLID BLIND VIAS THROUGH THE DIELECTRIC COATING ON HIGH DENSITY INTERCONNECT (HDI) SUBSTRATE MATERIALS
    • 通过高密度互连(HDI)衬底材料上的介电涂层形成固体黑色VIAS的方法
    • US20110266156A1
    • 2011-11-03
    • US13182838
    • 2011-07-14
    • Kevin C. OlsonAlan E. Wang
    • Kevin C. OlsonAlan E. Wang
    • C25D5/02C25D7/00
    • H05K3/44H05K3/108H05K3/388H05K3/445H05K3/4647H05K2201/09554H05K2203/0582H05K2203/0733H05K2203/135
    • A method includes forming a first substrate by (a) applying an electrodepositable dielectric coating onto a conductive surface; (b) curing the dielectric coating; (c) depositing an adhesion layer and a seed layer onto the dielectric coating; (d) applying a layer of a first removable material to the seed layer; (e) forming openings in the first removable material to expose areas of the seed layer; (f) electroplating a first conductive material to the exposed areas of the seed layer; (g) applying a layer of a second removable material; (h) forming openings in the second removable material to expose areas of the first conductive material; (i) plating a second conductive material to the exposed areas of the first conductive material; (j) removing the first and second removable materials; (k) removing unplated portions of the seed layer; repeating steps (a) through (k) to form a second substrate; and laminating the first and second substrates together with a layer of dielectric material between the first and second substrates to form at least one interconnect between the first and second substrates.
    • 一种方法包括通过以下步骤形成第一衬底:(a)将电沉积介电涂层施加到导电表面上; (b)固化电介质涂层; (c)在所述电介质涂层上沉积粘附层和种子层; (d)将第一可移除材料层施加到种子层; (e)在第一可移除材料中形成开口以暴露种子层的区域; (f)将第一导电材料电镀到种子层的暴露区域; (g)施加第二可移除材料层; (h)在所述第二可移除材料中形成开口以暴露所述第一导电材料的区域; (i)将第二导电材料镀覆到第一导电材料的暴露区域; (j)移除第一和第二可移除材料; (k)去除种子层的未镀层的部分; 重复步骤(a)至(k)以形成第二衬底; 以及将所述第一和第二基板与第一和第二基板之间的介电材料层一起层压,以在所述第一和第二基板之间形成至少一个互连。
    • 10. 发明授权
    • Method of forming solid blind vias through the dielectric coating on high density interconnect (HDI) substrate materials
    • 通过高密度互连(HDI)衬底材料上的电介质涂层形成固体盲孔的方法
    • US08409982B2
    • 2013-04-02
    • US13182838
    • 2011-07-14
    • Kevin C. OlsonAlan E. Wang
    • Kevin C. OlsonAlan E. Wang
    • H01L21/4763
    • H05K3/44H05K3/108H05K3/388H05K3/445H05K3/4647H05K2201/09554H05K2203/0582H05K2203/0733H05K2203/135
    • A method includes forming a first substrate by (a) applying an electrodepositable dielectric coating onto a conductive surface; (b) curing the dielectric coating; (c) depositing an adhesion layer and a seed layer onto the dielectric coating; (d) applying a layer of a first removable material to the seed layer; (e) forming openings in the first removable material to expose areas of the seed layer; (f) electroplating a first conductive material to the exposed areas of the seed layer; (g) applying a layer of a second removable material; (h) forming openings in the second removable material to expose areas of the first conductive material; (i) plating a second conductive material to the exposed areas of the first conductive material; (j) removing the first and second removable materials; (k) removing unplated portions of the seed layer; repeating steps (a) through (k) to form a second substrate; and laminating the first and second substrates together with a layer of dielectric material between the first and second substrates to form at least one interconnect between the first and second substrates.
    • 一种方法包括通过以下步骤形成第一衬底:(a)将电沉积介电涂层施加到导电表面上; (b)固化电介质涂层; (c)在所述电介质涂层上沉积粘附层和种子层; (d)将第一可移除材料层施加到种子层; (e)在第一可移除材料中形成开口以暴露种子层的区域; (f)将第一导电材料电镀到种子层的暴露区域; (g)施加第二可移除材料层; (h)在所述第二可移除材料中形成开口以暴露所述第一导电材料的区域; (i)将第二导电材料镀覆到第一导电材料的暴露区域; (j)移除第一和第二可移除材料; (k)去除种子层的未镀层的部分; 重复步骤(a)至(k)以形成第二衬底; 以及将所述第一和第二基板与第一和第二基板之间的介电材料层一起层压,以在所述第一和第二基板之间形成至少一个互连。