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    • 10. 发明授权
    • Method for fabrication of a silicon photosensor array on a wafer and testing the same
    • 在晶片上制造硅光电传感器阵列并进行测试的方法
    • US06528336B2
    • 2003-03-04
    • US09829117
    • 2001-04-09
    • Paul A. HosierJagdish C. Tandon
    • Paul A. HosierJagdish C. Tandon
    • H01L2166
    • H01L27/1463G01R31/2831H01L27/14632
    • A method of fabricating and a wafer having a plurality of photosensor Arrays thereon. And, a method of testing the wafer before the wafer is diced and assembled to form a Silicon photosensor Array which may be combined with other like photosensor arrays to form a full page width image sensor bar. The invention allows checking of every V-groove on every chip. An implanted or diffused region is placed across the V-groove, with electrical connections on both ends of the diffusion. If the V-groove is formed, the diffused region will be broken and the electrical path will be open. A deeper diffusion can be also used to check for incomplete V-grooves. If one end of the electrical path is tied to an existing I/O pad on the chip and the other end to ground, this path will have no effect on the input resistance if the V-groove is formed. There will be a small, but acceptable, increase in input capacitance. If the V-groove is not formed, the connection will appear as a short or high leakage on the chip input, which will fail the DC test on that I/O. Thus, existing DC tests can be used to check normal I/O integrity and V-groove process completion.
    • 一种制造方法和在其上具有多个光电传感器阵列的晶片。 而且,在将晶片切割和组装之前测试晶片的方法以形成硅光电传感器阵列,其可以与其它类似的光电传感器阵列组合以形成全页宽度的图像传感器条。 本发明允许在每个芯片上检查每个V形槽。 植入或扩散区域横跨V形槽放置,扩散两端具有电连接。 如果形成V形槽,则扩散区域将被破坏并且电路径将被打开。 更深的扩散也可用于检查不完整的V形槽。 如果电路的一端连接到芯片上的现有I / O焊盘,另一端连接到地,则如果形成V形槽,该路径对输入电阻没有影响。 输入电容的增加将会很小但可以接受。 如果没有形成V形槽,则连接将在芯片输入端显示为短路或高电流泄漏,这将导致该I / O的直流测试失败。 因此,可以使用现有的直流测试来检查正常的I / O完整性和V槽工艺的完成。