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1. 发明申请

US20080317154A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE 审中-公开
标题翻译：半导体集成电路设备和无线电频率模块
公开(公告)号：US20080317154A1
公开(公告)日：2008-12-25
申请号：US11765236
申请日：2007-06-19
申请人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinnichirou Takatani , Shinya Osakabe , Tomoyuki Ishikawa
发明人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinnichirou Takatani , Shinya Osakabe , Tomoyuki Ishikawa
IPC分类号： H04B1/38
CPC分类号： H04B1/006 , H01L27/0641 , H03K17/005 , H03K17/007 , H03K17/063 , H03K17/161 , H03K17/302 , H03K17/6871 , H03K17/693 , H03K17/72 , H03K2017/066 , H03K2217/0018
摘要： The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.
摘要翻译：本发明提供一种半导体集成电路器件和实现高阶谐波失真或IMD降低的射频模块。例如，在天线端子和多个信号端子之间具有多个晶体管的所谓的天线开关设置有电压供给电路。电压供给电路是用于经由电阻元件将电压从电压端子提供给多个信号端子中的至少两个信号端子的电路。通过该结构，可以提高由于漏电等而导致的天线电压下降，例如，可以将关断状态的晶体管设定为深断状态。

2. 发明申请

US20080197923A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND HIGH-FREQUENCY POWER AMPLIFIER MODULE 有权
标题翻译：半导体集成电路设备和高频功率放大器模块
公开(公告)号：US20080197923A1
公开(公告)日：2008-08-21
申请号：US11960242
申请日：2007-12-19
申请人： Akishige NAKAJIMA , Yasushi Shigeno , Tomoyuki Ishikawa
发明人： Akishige NAKAJIMA , Yasushi Shigeno , Tomoyuki Ishikawa
IPC分类号： H03F1/32
CPC分类号： H03F3/189 , H03F1/56 , H03F3/68
摘要： Upon application of an on-state voltage to a control terminal, an antenna switch provided between an antenna terminal and a transmission terminal is turned on, and a transmission signal of a PCS/DCS system passes from the transmission terminal through the antenna terminal. At this time, a booster circuit, to which a part of the transmission signal is supplied, generates at an output terminal a boost voltage higher than a control voltage output from a controller due to the rectification of diodes, and applies the same to the gate of a transistor circuit of the antenna switch. Since in the booster circuit a resistor is coupled to the output terminal, the passage through resistors of an input transmission power in an RF signal path is only the passage through one resistor, thus reducing the attenuation of the transmission signal and providing an excellent insertion loss characteristic.
摘要翻译：在向控制终端施加通状态电压时，设置在天线端子和发送端子之间的天线开关导通，并且PCS / DCS系统的发送信号通过天线端子从发送端子通过。此时，提供传输信号的一部分的升压电路在输出端产生比由二极管整流由控制器输出的控制电压高的升压电压，并将其施加到栅极的天线开关的晶体管电路。由于在升压电路中，电阻器耦合到输出端子，所以通过RF信号路径中的输入传输功率的电阻器的通过仅是通过一个电阻器，从而减少了传输信号的衰减并提供了优异的插入损耗特性。

3. 发明申请

US20070049352A1 Semiconductor integrated circuit device and high frequency power ampifier module 有权
标题翻译：半导体集成电路器件和高频功率放大器模块
公开(公告)号：US20070049352A1
公开(公告)日：2007-03-01
申请号：US11512189
申请日：2006-08-30
申请人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinya Osakabe , Tomoyuki Ishikawa
发明人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinya Osakabe , Tomoyuki Ishikawa
IPC分类号： H04B1/28 , H04B1/38
CPC分类号： H04B1/006
摘要： In a SPDT switch, a resistor for leak path is connected between a terminal for antenna and a reference potential. The resistor for leak path allows charge capacitances accumulated in electrostatic capacitor elements provided as DC cut capacitors connected to transmission signal terminals and reception signal terminals to be discharged and allows rapid lowering of a potential at the terminal for antenna. In the SPDT switch, a switching characteristic is improved and a delay in the rising edge of a low-power slot which comes after a high-power slot is reduced.
摘要翻译：在SPDT开关中，用于泄漏路径的电阻器连接在天线端子和参考电位之间。泄漏路径电阻允许在连接到发送信号端子和接收信号端子的DC切断电容器上设置的静电电容器元件中蓄积的充电电容被放电，并允许在天线端子处的电位快速降低。在SPDT开关中，改善了开关特性，并且降低了在大功率插槽之后的低功率插槽的上升沿的延迟。

4. 发明授权

US08824974B2 Semiconductor integrated circuit device and radio frequency module 有权
标题翻译：半导体集成电路器件和射频模块
公开(公告)号：US08824974B2
公开(公告)日：2014-09-02
申请号：US12910071
申请日：2010-10-22
申请人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinnichirou Takatani , Shinya Osakabe , Tomoyuki Ishikawa
发明人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinnichirou Takatani , Shinya Osakabe , Tomoyuki Ishikawa
IPC分类号： H04B1/44
CPC分类号： H04B1/006 , H01L27/0641 , H03K17/005 , H03K17/007 , H03K17/063 , H03K17/161 , H03K17/302 , H03K17/6871 , H03K17/693 , H03K17/72 , H03K2017/066 , H03K2217/0018
摘要： The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.
摘要翻译：本发明提供一种半导体集成电路器件和实现高阶谐波失真或IMD降低的射频模块。例如，在天线端子和多个信号端子之间具有多个晶体管的所谓的天线开关设置有电压供给电路。电压供给电路是用于经由电阻元件将电压从电压端子提供给多个信号端子中的至少两个信号端子的电路。通过这样的结构，能够提高由漏电等引起的天线电压下降，例如可以将处于断开状态的晶体管设定为深断状态。

5. 发明授权

US08115234B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08115234B2
公开(公告)日：2012-02-14
申请号：US12564939
申请日：2009-09-23
申请人： Akishige Nakajima , Yasushi Shigeno , Hitoshi Akamine , Tsutomu Kobori , Izumi Arai , Kazuto Tajima , Tomoyuki Ishikawa , Jyun Funaki
发明人： Akishige Nakajima , Yasushi Shigeno , Hitoshi Akamine , Tsutomu Kobori , Izumi Arai , Kazuto Tajima , Tomoyuki Ishikawa , Jyun Funaki
IPC分类号： H01L29/778 , H01L29/80
CPC分类号： H01L29/7783 , H01L27/0207 , H01L29/41758 , H01L29/42316 , H01L29/4238 , H01L29/7833 , H04B1/48 , H04B7/0831
摘要： There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.
摘要翻译：提供了一种用于减少由场效应晶体管，特别是构成天线开关的开关元件的场效应晶体管发生的高次谐波的发生的技术。在具有曲折结构的晶体管中，最靠近栅极输入侧的部分晶体管的栅极宽度增加。更具体地，使梳状电极比其他梳状电极长。换句话说，使手指长度大于任何其他手指长度。特别地，梳状电极在所有梳状电极中具有最大的长度。

6. 发明授权

US07986927B2 Semiconductor integrated circuit device and high-frequency power amplifier module 有权
标题翻译：半导体集成电路器件和高频功率放大器模块
公开(公告)号：US07986927B2
公开(公告)日：2011-07-26
申请号：US11960242
申请日：2007-12-19
申请人： Akishige Nakajima , Yasushi Shigeno , Tomoyuki Ishikawa
发明人： Akishige Nakajima , Yasushi Shigeno , Tomoyuki Ishikawa
IPC分类号： H01Q11/12 , H04B1/04
CPC分类号： H03F3/189 , H03F1/56 , H03F3/68
摘要： Upon application of an on-state voltage to a control terminal, an antenna switch provided between an antenna terminal and a transmission terminal is turned on, and a transmission signal of a PCS/DCS system passes from the transmission terminal through the antenna terminal. At this time, a booster circuit, to which a part of the transmission signal is supplied, generates at an output terminal a boost voltage higher than a control voltage output from a controller due to the rectification of diodes, and applies the same to the gate of a transistor circuit of the antenna switch. Since in the booster circuit a resistor is coupled to the output terminal, the passage through resistors of an input transmission power in an RF signal path is only the passage through one resistor, thus reducing the attenuation of the transmission signal and providing an excellent insertion loss characteristic.
摘要翻译：在向控制终端施加通状态电压时，设置在天线端子和发送端子之间的天线开关导通，并且PCS / DCS系统的发送信号通过天线端子从发送端子通过。此时，提供传输信号的一部分的升压电路在输出端产生比由二极管整流由控制器输出的控制电压高的升压电压，并将其施加到栅极的天线开关的晶体管电路。由于在升压电路中，电阻器耦合到输出端子，所以通过RF信号路径中的输入传输功率的电阻器的通过仅是通过一个电阻器，从而减少了传输信号的衰减并提供了优异的插入损耗特性。

7. 发明授权

US07650134B2 Semiconductor integrated circuit device and high frequency power amplifier module 有权
标题翻译：半导体集成电路器件和高频功率放大器模块
公开(公告)号：US07650134B2
公开(公告)日：2010-01-19
申请号：US11512189
申请日：2006-08-30
申请人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinya Osakabe , Tomoyuki Ishikawa
发明人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinya Osakabe , Tomoyuki Ishikawa
IPC分类号： H04B1/16
CPC分类号： H04B1/006
摘要： In a SPDT switch, a resistor for leak path is connected between a terminal for antenna and a reference potential. The resistor for leak path allows charge capacitances accumulated in electrostatic capacitor elements provided as DC cut capacitors connected to transmission signal terminals and reception signal terminals to be discharged and allows rapid lowering of a potential at the terminal for antenna. In the SPDT switch, a switching characteristic is improved and a delay in the rising edge of a low-power slot which comes after a high-power slot is reduced.
摘要翻译：在SPDT开关中，用于泄漏路径的电阻器连接在天线端子和参考电位之间。泄漏路径电阻允许在连接到发送信号端子和接收信号端子的DC切断电容器上设置的静电电容器元件中蓄积的充电电容被放电，并允许在天线端子处的电位快速降低。在SPDT开关中，改善了开关特性，并且降低了在大功率插槽之后的低功率插槽的上升沿的延迟。

8. 发明授权

US08385847B2 Switching element, antenna switch circuit and radio frequency module using the same 有权
公开(公告)号：US08385847B2
公开(公告)日：2013-02-26
申请号：US12929940
申请日：2011-02-25
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

9. 发明授权

US08159282B2 Semiconductor integrated circuit and high frequency module with the same 有权
标题翻译：半导体集成电路与高频模块相同
公开(公告)号：US08159282B2
公开(公告)日：2012-04-17
申请号：US12615525
申请日：2009-11-10
申请人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
发明人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , H03K17/063
摘要： The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.
摘要翻译：本发明旨在减少在将RF Tx信号提供给天线开关的偏置产生电路时的RF（发送）Tx输出信号的谐波信号的电平的增加。半导体集成电路包括具有偏置产生电路，Tx开关和具有偏置产生电路，发射器开关和接收器（Rx））开关的天线开关的天线开关。耦合在Tx端口和I / O端口之间的Tx开关的晶体管的导通/截止状态由Tx控制偏置来控制。耦合在I / O端口和接收器（Rx）端口之间的Rx开关的晶体管的开/关状态由RX控制偏置来控制。偏置产生电路的射频（RF）信号输入端口耦合到Tx端口，并且可以将从DC输出端口产生的负DC输出偏压提供给Rx开关的晶体管的栅极控制端口。

10. 发明授权

US07269392B2 Electric component for communication device and semiconductor device for switching transmission and reception 有权
标题翻译：用于通信设备的电气部件和用于切换发送和接收的半导体器件
公开(公告)号：US07269392B2
公开(公告)日：2007-09-11
申请号：US10921211
申请日：2004-08-19
申请人： Akishige Nakajima , Takashi Ogawa , Hidenori Suenaga , Eigo Tange , Shinya Osakabe , Yasushi Shigeno
发明人： Akishige Nakajima , Takashi Ogawa , Hidenori Suenaga , Eigo Tange , Shinya Osakabe , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H03F3/195 , H03F1/0277 , H03F1/32 , H03F3/72 , H03F2200/111 , H03F2200/372 , H03F2200/429
摘要： There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.
摘要翻译：提供了一种插入损耗和谐波失真小的发送/接收切换电路，并且允许功率放大器和安装发送/接收切换电路的通信用电子部件的输出功率的增加。作为构成无线通信系统中的发送/接收切换电路的元件，使用串联连接的FET或多栅极FET来代替二极管。连接在各个栅极端子和控制端子之间的栅极电阻被设计成具有从施加最低电压的栅极施加最高电压的栅极逐渐变小的电阻值。

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