会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明申请
    • Zno single crystal as super high speed scintillator...
    • Zno单晶作为超高速闪烁体
    • US20070193499A1
    • 2007-08-23
    • US11569350
    • 2005-05-20
    • Tsuguo FukudaAkira YoshikawaHiraku Ogino
    • Tsuguo FukudaAkira YoshikawaHiraku Ogino
    • H01L21/322
    • G21K4/00C09K11/565C09K11/595C09K11/623C09K11/642C09K11/662C09K11/7702C30B29/16C30B33/00
    • To find out a crystalline material for a high speed scintillator in place of BaF2 and the like, and a method for producing the material at a low cost. A single crystal of (Zn1−xMx)O1+x (M: Al, Ga, In, Y, Sc, La, Gd, Lu) (x=0 to 0.0500), (Zn1−xM′x)O1+2x(M′: Si, Ge, Sn, Pb)(x=0 to 0.0250) or (Zn1−xCdx)O (x=0 to 0.0500) is used as a scintillator. Defects of a ZnO single crystal can be reduced by using a platinum inner cylinder in order for a solution not to directly contact with an autoclave, for reducing impurities in the ZnO single crystal and precluding impurities interfering with scintillation, and by using LiOH and KOH as a mineralizer. ZnO can be doped with Al2O3, Ga2O3, In2O3, Si, Cd or the like by adding those materials to a starting material for the hydrothermal synthesis. The doping amounts can be controlled by changing charging amounts thereof. The doping of those elements inhibits the emission of visible lights, which results in the efficient transformation of the excitation energy to the luminescence from a free exciton.
    • 找出代替BaF 2等的高速闪烁体的结晶材料,以及低成本地制造材料的方法。 (Zn 1-x M x O)O 1 + x(M:Al,Ga,In,Y,Sc, La,Gd,Lu)(x = 0〜0.0500),(Zn 1-x M'x X)O 1 + 2x(M 使用Si,Ge,Sn,Pb)(x = 0〜0.0250)或(Zn 1-x S x x x)O(x = 0〜0.0500) 作为闪烁体。 可以通过使用铂内筒来降低ZnO单晶的缺陷,以使溶液不与高压釜直接接触,以减少ZnO单晶中的杂质并排除杂质干扰闪烁,并且通过使用LiOH和KOH作为 矿化剂 ZnO可以掺杂有Al 2 O 3,Ga 2 O 3 3,In 2 O 3, 通过将这些材料加入到用于水热合成的起始材料中,将其加入到Si 3 O 3,Si 3,Cd 3等中。 可以通过改变其充电量来控制掺杂量。 这些元素的掺杂抑制可见光的发射,这导致激发能量有效地从游离激子转变为发光。
    • 6. 发明申请
    • Process for producing single crystal of gallium-containing nitride
    • 含镓氮化物单晶的制造方法
    • US20070175383A1
    • 2007-08-02
    • US10586581
    • 2005-01-20
    • Tsuguo FukudaEhrentraut DirkAkira Yoshikawa
    • Tsuguo FukudaEhrentraut DirkAkira Yoshikawa
    • C30B15/00C30B19/00C30B21/06
    • C30B11/14C30B17/00C30B19/00C30B19/12C30B29/40
    • [Problems] To provide a process that allows melt growth of single crystals of a gallium-containing nitride with less dangerous, inexpensive equipment, in particular, a process that can be performed under normal pressure. [Solving Means] A process for producing single crystals of a gallium-containing nitride on a seed crystal substrate by a reaction between molten gallium retained in a container inside a crystal growth chamber and nitrogen gas, the process includes the steps of preparing a eutectic alloy melt of gallium (Ga); dipping the seed crystal substrate into the eutectic alloy melt, the seed crystal substrate having a catalytic metal having a mesh, stripe, or open polka-dot pattern deposited thereon; and graphoepitaxially growing a single crystal phase of the gallium-containing nitride on the surface of the seed crystal substrate by the reaction at the surface of the seed crystal substrate between gallium, which is a component of a eutectic alloy, and nitrogen dissolving into the eutectic alloy melt from a space zone containing a nitrogen supply source above a surface of the melt.
    • [问题]提供一种允许含有氮化镓的单晶熔融生长的方法,其具有危险性低廉的设备,特别是能够在常压下进行的方法。 [解决方案]通过保留在晶体生长室内的容器中的熔融镓与氮气之间的反应,在晶种基板上制造含镓氮化物的单晶的方法,该方法包括以下步骤:制备共晶合金 熔融镓(Ga); 将晶种衬底浸入共晶合金熔体中,晶种衬底具有沉积在其上的网状,条纹或开口圆点图案的催化金属; 并且通过在晶体基板的表面上的作为共晶合金的成分的镓与溶解在共晶体中的氮之间的反应在晶种基板的表面上对含镓氮化物的单晶相进行表面取向生长 来自在熔体表面上方含有氮源的空间区的合金熔体。