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1. 发明授权

US07184379B2 Optical disk recording/reproducing method and apparatus in which recording properties of the disk are detected when recording speed is changed 失效
标题翻译：当记录速度改变时检测到盘的记录特性的光盘记录/再现方法和装置
公开(公告)号：US07184379B2
公开(公告)日：2007-02-27
申请号：US10080994
申请日：2002-02-20
申请人： Akira Tsukihashi , Toru Tanaka , Yasushi Hanamoto , Shinji Seki , Toshihiko Hiroshima , Yutaka Imamura
发明人： Akira Tsukihashi , Toru Tanaka , Yasushi Hanamoto , Shinji Seki , Toshihiko Hiroshima , Yutaka Imamura
IPC分类号： G11B7/0045
CPC分类号： G11B20/10527 , G11B19/00 , G11B2020/10685 , G11B2020/10703 , G11B2020/10731 , G11B2020/1074 , G11B2020/10814
摘要： An operation for recording a recording signal onto a disk (1) is interrupted, when an amount of signal data stored in a buffer RAM (11) for temporarily storing the recording signal is less than an interruption setting value during performing of the recording operation. Moreover, when the amount of signal data stored in the buffer RAM (11) increases and indicates a resumption setting value, the signal recorded on the disk (1) before interruption is reproduced, and the recording operation is resumed based on the reproduced signal. Moreover, recording properties are detected by the signal reproduced before resumption of recording.
摘要翻译：当在执行记录操作期间存储在用于临时存储记录信号的缓冲RAM（11）中的信号数据量小于中断设置值时，用于将记录信号记录在盘（1）上的操作被中断。此外，当存储在缓冲RAM（11）中的信号数据的量增加并且指示恢复设置值时，再现在中断之前记录在盘（1）上的信号，并且基于再现信号重新开始记录操作。此外，通过在恢复记录之前再现的信号来检测记录属性。

2. 发明授权

US06925044B2 Recording control method for optical disk recording and reproducing apparatus 失效
标题翻译：用于光盘记录和再现装置的记录控制方法
公开(公告)号：US06925044B2
公开(公告)日：2005-08-02
申请号：US10230760
申请日：2002-08-28
申请人： Yasushi Hanamoto , Toru Tanaka
发明人： Yasushi Hanamoto , Toru Tanaka
IPC分类号： G11B7/00 , G11B7/0045 , G11B7/006 , G11B7/085 , G11B7/09 , G11B20/10
CPC分类号： G11B7/085 , G11B7/006 , G11B20/10527 , G11B2020/10814
摘要： When during the operation of recording a signal onto a disk the amount of signal data stored in a buffer RAM for temporarily storing a recording signal falls below an interruption set value, the recording operation on the disk is interrupted. Subsequently, when the amount of signal data stored in the buffer RAM increases to a resumption set value, a signal recorded on the disk before the interruption is reproduced. On the basis of the reproduced signal, the recording operation is resumed from a position where the recording is interrupted. The operation of resuming recording that is interrupted due to a shock is permitted. The operation of resuming recording after the interruption of the recording is started from a position that is before the position where the recording is interrupted.
摘要翻译：在将信号记录到盘上的操作期间，存储在用于临时存储记录信号的缓冲RAM中的信号数据的量落在中断设定值以下，所以盘上的记录操作被中断。随后，当存储在缓冲器RAM中的信号数据量增加到恢复设定值时，再现在中断之前记录在盘上的信号。基于再现信号，从记录中断的位置恢复记录操作。允许由于冲击中断的恢复记录的操作。在记录中断之后恢复记录的操作从记录被中断的位置之前的位置开始。

3. 发明授权

US06489740B2 Spindle motor control method of optical disk recording and reproducing apparatus 失效
标题翻译：光盘记录和再现装置的主轴电动机控制方法
公开(公告)号：US06489740B2
公开(公告)日：2002-12-03
申请号：US09854066
申请日：2001-05-10
申请人： Yasushi Hanamoto , Toru Tanaka
发明人： Yasushi Hanamoto , Toru Tanaka
IPC分类号： G05B1101
CPC分类号： G11B19/28
摘要： To provide a spindle motor control method adapted to an optical disk recording and reproducing apparatus capable of recording a signal onto a disk using a laser applied from an optical pick-up, a reference signal originated from a disk (1) and a reference signal necessary for signal recording are synchronized to each other when resuming signal recording once suspended. The synchronization is established without using a phase error component. Once synchronization is established, a phase error component is added to a servo signal of the spindle motor (2). A gain for a phase error component is begun gradually increasing after a phase error component is begun being added to a servo signal. An upper limit value of the gain of a phase error component to be added is determined depending on the location of a part on the disk (1) at which to resume the once suspended signal recording.
摘要翻译：为了提供一种适用于能够使用从光学拾取器施加的激光将信号记录到盘上的光盘记录和再现装置的主轴电动机控制方法，来自盘（1）的参考信号和必要的参考信号当暂停信号记录时，信号记录被彼此同步。在不使用相位误差分量的情况下建立同步。一旦建立了同步，则将相位误差分量加到主轴马达（2）的伺服信号上。在相位误差分量开始加到伺服信号之后，相位误差分量的增益开始逐渐增加。要添加的相位误差分量的增益的上限值是根据恢复暂停信号记录的盘（1）上的部分的位置确定的。

4. 发明授权

US09318764B2 Proton conducting polymer membrane, membrane-electrode assembly using same, and polymer electrolyte fuel cell 有权
标题翻译：质子导电聚合物膜，使用其的膜 - 电极组件和聚合物电解质燃料电池
公开(公告)号：US09318764B2
公开(公告)日：2016-04-19
申请号：US14007241
申请日：2012-04-13
申请人： Toru Tanaka , Katsutoshi Suzuki , Haruhiko Komoriya , Arata Takahashi , Saori Itabashi
发明人： Toru Tanaka , Katsutoshi Suzuki , Haruhiko Komoriya , Arata Takahashi , Saori Itabashi
IPC分类号： H01M8/10 , H01B1/12 , C08J5/22
CPC分类号： H01M8/1039 , C08J5/2225 , H01B1/122 , H01M8/1011 , H01M8/1023 , H01M8/1037 , H01M8/1053 , Y02E60/523 , Y10T156/10
摘要： Disclosed is a proton conducting polymer membrane formed by laminating a plurality of solid electrolyte membranes. This proton conducting polymer membrane is one prepared by laminating at least one layer of a solid electrolyte membrane formed by using a resin having a bis(perfluoroalkanesulfonyl)methide group in the chemical structure. This solid electrolyte membrane has a superior proton conductivity without transmitting the fuel (methanol or hydrogen).
摘要翻译：公开了通过层叠多个固体电解质膜形成的质子传导性聚合物膜。该质子传导性聚合物膜是通过层叠通过在化学结构中使用具有双（全氟烷基磺酰基）甲硅烷基的树脂形成的至少一层固体电解质膜而制备的。该固体电解质膜在不传输燃料（甲醇或氢）的情况下具有优异的质子传导性。

5. 发明授权

US09223501B2 Computer system and virtual server migration control method for computer system 有权
标题翻译：计算机系统和虚拟服务器迁移控制方法
公开(公告)号：US09223501B2
公开(公告)日：2015-12-29
申请号：US13511102
申请日：2012-04-23
申请人： Atsumi Terayama , Akihisa Nagami , Toru Tanaka , Yasunori Kaneda , Yoshinori Okami
发明人： Atsumi Terayama , Akihisa Nagami , Toru Tanaka , Yasunori Kaneda , Yoshinori Okami
IPC分类号： G06F3/06 , G06F17/30 , G06F12/08 , G06F9/455
CPC分类号： G06F3/061 , G06F3/0619 , G06F3/0647 , G06F3/065 , G06F3/0662 , G06F3/067 , G06F9/45533
摘要： When migrating a virtual server between a plurality of physical servers, a pre-migration connection relationship between the virtual server and a storage area used by the virtual server is maintained after the migration of the virtual server by using a cooperative mechanism between a plurality of storage apparatuses even if the storage area used by the virtual server is migrated between the plurality of storage apparatuses. A computer system and virtual server migration control method for the computer system is described.
摘要翻译：当在多个物理服务器之间迁移虚拟服务器时，在虚拟服务器通过使用多个存储器之间的协作机制迁移之后维护虚拟服务器与虚拟服务器使用的存储区域之间的预迁移连接关系即使虚拟服务器使用的存储区域在多个存储装置之间迁移也是如此。描述了用于计算机系统的计算机系统和虚拟服务器迁移控制方法。

6. 发明授权

US09153525B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09153525B2
公开(公告)日：2015-10-06
申请号：US14073059
申请日：2013-11-06
申请人： Toru Tanaka
发明人： Toru Tanaka
IPC分类号： H01L23/48 , H01L23/495 , H01L23/00
CPC分类号： H01L23/49513 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L2224/04026 , H01L2224/05624 , H01L2224/06181 , H01L2224/2908 , H01L2224/29111 , H01L2224/29118 , H01L2224/29339 , H01L2224/29355 , H01L2224/32245 , H01L2224/33181 , H01L2224/83825 , H01L2224/8384 , H01L2924/0002 , H01L2924/0132 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/351 , H01L2924/01014 , H01L2924/0105 , H01L2924/01051 , H01L2924/01013 , H01L2924/0103 , H01L2924/01029 , H01L2924/01028 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor element that includes an electrode layer on a surface of the semiconductor element; a low-strength layer that is provided on a surface of the electrode layer; a bonding layer that is provided on a surface of the low-strength layer; and a conductive plate that is provided on a surface of the bonding layer. Strength of the bonding layer is higher than strength of the electrode layer, and strength of the low-strength layer is lower than the strength of the electrode layer.
摘要翻译：半导体器件包括：半导体元件，其包括在半导体元件的表面上的电极层; 设置在电极层的表面上的低强度层; 设置在低强度层的表面上的接合层; 以及设置在所述接合层的表面上的导电板。接合层的强度高于电极层的强度，低强度层的强度低于电极层的强度。

7. 发明申请

US20130219138A1 STORAGE SYSTEM, MANAGEMENT SERVER, STORAGE APPARATUS, AND DATA MANAGEMENT METHOD 有权
标题翻译：存储系统，管理服务器，存储设备和数据管理方法
公开(公告)号：US20130219138A1
公开(公告)日：2013-08-22
申请号：US13496036
申请日：2012-02-16
申请人： Hiroshi Nasu , Toru Tanaka
发明人： Hiroshi Nasu , Toru Tanaka
IPC分类号： G06F12/16
CPC分类号： G06F3/0608 , G06F3/061 , G06F3/0646 , G06F3/0662 , G06F3/067 , G06F11/1451 , G06F2201/84
摘要： A snapshot volume is migrated by using a primary volume of a migration destination storage apparatus.The management server comprises a controller for generational management, by means of the snapshot volumes, of differential data for the logical volume which is the parent volume of the snapshot volume, and, if an instruction to copy a snapshot volume of a designated generation is received and a snapshot volume prior to the designated generation of the copy instruction-target snapshot volume exists, the controller copies the differential data between the designated-generation snapshot volume and the existing snapshot volume, and associates the copied differential data with the existing snapshot volume.
摘要翻译：使用迁移目的地存储设备的主卷迁移快照卷。管理服务器包括用于通过快照卷对作为快照卷的父卷的逻辑卷的差异数据进行代数管理的控制器，以及如果接收到复制指定代的快照卷的指令并且存在指定生成复制指令目标快照卷之前的快照卷，控制器将复制指定代快照卷与现有快照卷之间的差异数据，并将复制的差异数据与现有快照卷相关联。

8. 发明授权

US08287645B2 Production process for high purity polycrystal silicon and production apparatus for the same 失效
标题翻译：高纯多晶硅生产工艺及生产设备相同
公开(公告)号：US08287645B2
公开(公告)日：2012-10-16
申请号：US13013270
申请日：2011-01-25
申请人： Shuichi Honda , Minoru Yasueda , Satoshi Hayashida , Masatsugu Yamaguchi , Toru Tanaka
发明人： Shuichi Honda , Minoru Yasueda , Satoshi Hayashida , Masatsugu Yamaguchi , Toru Tanaka
IPC分类号： C30B25/14
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译：在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管，氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并且允许多晶硅生长从氯化硅气体供给喷嘴的前端朝向其下部。

9. 发明授权

US08032490B2 Storage system operable to perform LU auditing 有权
标题翻译：存储系统可操作以执行LU审核
公开(公告)号：US08032490B2
公开(公告)日：2011-10-04
申请号：US12078615
申请日：2008-04-02
申请人： Toru Tanaka , Yuichi Taguchi , Hiroshi Nasu , Masayuki Yamamoto
发明人： Toru Tanaka , Yuichi Taguchi , Hiroshi Nasu , Masayuki Yamamoto
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： G06F11/3476
摘要： A storage system capable of identifying all volumes to be audited is provided.Operation logs 3005 concerning the operations of volumes are associated with a time and stored in storage apparatuses 1400 and 1500, and a management computer 1100 collects information about these operation logs 3005, restores the status history of the operation logs 3005, sets, as an audit range, the operation logs 3005 including volumes with an audit period and audit target data stored therein, extracts the operation logs 3005 belonging to the audit range from the restored status history of the operation logs 3005, and transmits the extracted operation logs 3005 to a computer (requesting computer) 1000. As a result, all the audit target volumes can be identified.
摘要翻译：提供了一种能够识别要审核的所有卷的存储系统。关于卷的操作的操作日志3005与时间相关联并存储在存储设备1400和1500中，并且管理计算机1100收集关于这些操作日志3005的信息，恢复操作日志3005的状态历史，设置为审计范围内，包含审核期间的卷和审核对象数据的操作日志3005从恢复的操作日志3005的状态历史中提取属于审核范围的操作日志3005，并将提取的操作日志3005发送到计算机（请求计算机）1000.因此，可以识别所有审核目标卷。

10. 发明授权

US07922814B2 Production process for high purity polycrystal silicon and production apparatus for the same 有权
标题翻译：高纯多晶硅生产工艺及生产设备相同
公开(公告)号：US07922814B2
公开(公告)日：2011-04-12
申请号：US11556524
申请日：2006-11-03
申请人： Shuichi Honda , Minoru Yasueda , Satoshi Hayashida , Masatsugu Yamaguchi , Toru Tanaka
发明人： Shuichi Honda , Minoru Yasueda , Satoshi Hayashida , Masatsugu Yamaguchi , Toru Tanaka
IPC分类号： C30B21/02
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译：在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管，氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长从氯化硅气体供给喷嘴的前端朝向其下部。

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