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1. 发明申请

US20050062041A1 Photovoltaic cell and method of fabricating the same 有权
标题翻译：光伏电池及其制造方法
公开(公告)号：US20050062041A1
公开(公告)日：2005-03-24
申请号：US10948265
申请日：2004-09-24
申请人： Akira Terakawa , Toshio Asaumi
发明人： Akira Terakawa , Toshio Asaumi
IPC分类号： H01L31/075 , H01L29/04
CPC分类号： H01L31/0747 , H01L31/022441 , Y02E10/50
摘要： An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substrate are provided a positive electrode and a negative electrode next to each other. The positive electrode includes an i-type amorphous silicon film, a p-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate. The negative electrode includes an i-type amorphous silicon film, an n-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate.
摘要翻译：在n型单晶硅衬底的主表面上依次形成i型非晶硅膜和由非晶氮化硅等制成的抗反射膜。在n型单晶硅衬底的背表面上设置有彼此相邻的正极和负极。正极包括在n型单晶硅衬底的背面上依次形成的i型非晶硅膜，p型非晶硅膜，背面电极和集电极。负极包括在n型单晶硅衬底的背面上依次形成的i型非晶硅膜，n型非晶硅膜，背面电极和集电极。

2. 发明授权

US08349643B2 Photovoltaic device and manufacturing method thereof 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US08349643B2
公开(公告)日：2013-01-08
申请号：US12987245
申请日：2011-01-10
申请人： Akira Terakawa
发明人： Akira Terakawa
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L31/20 , H01L31/0352 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm−3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm−3.
摘要翻译：提供能够提高输出特性的光电装置。光电器件包括n型单晶硅衬底，p型非晶硅衬底和设置在n型单晶硅衬底和p型非晶硅之间的基本上本征的i型非晶硅层层。 i型非晶硅层包括：第一部分，其位于n型单晶硅衬底侧，氧浓度等于或低于1020cm-3; 以及第二部分，其位于p型非晶硅层侧，氧浓度等于或大于1020cm-3。

3. 发明申请

US20080261347A1 METHOD OF MANUFACTURING SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING PHOTOVOLTAIC ELEMENT 有权
标题翻译：制造半导体膜的方法和制造光伏元件的方法
公开(公告)号：US20080261347A1
公开(公告)日：2008-10-23
申请号：US12105469
申请日：2008-04-18
申请人： Akira Terakawa , Toshio Asaumi
发明人： Akira Terakawa , Toshio Asaumi
IPC分类号： H01L21/00 , H01L21/3205
CPC分类号： H01L31/202 , C23C16/24 , C23C16/44 , C23C16/4408 , C23C16/45557 , H01L21/02532 , H01L21/0262 , H01L31/075 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a semiconductor film capable of inhibiting the quality of a semiconductor film from destabilization is obtained. This method of manufacturing a semiconductor film includes steps of introducing source gas for a semiconductor, controlling the pressure of an atmosphere formed by the source gas to a prescribed level, heating a catalytic wire to at least a prescribed temperature after controlling the pressure of the atmosphere to the prescribed level and forming a semiconductor film by decomposing the source gas with the heated catalytic wire.
摘要翻译：获得能够抑制半导体膜的质量不稳定的半导体膜的制造方法。这种制造半导体膜的方法包括以下步骤：引入用于半导体的源气体，将由源气体形成的气氛的压力控制在规定水平，在控制大气压力之后将催化剂丝加热至规定温度达到规定水平，并通过用加热的催化丝分解源气体来形成半导体膜。

4. 再颁专利

USRE45872E1 Photovoltaic cell 有权
标题翻译：光伏电池
公开(公告)号：USRE45872E1
公开(公告)日：2016-01-26
申请号：US13592613
申请日：2012-08-23
申请人： Akira Terakawa , Toshio Asaumi
发明人： Akira Terakawa , Toshio Asaumi
IPC分类号： H01L25/00 , H01L31/0747 , H01L31/0224 , H01L31/0352
CPC分类号： H01L31/0747 , H01L31/022466 , H01L31/035272 , Y02E10/50
摘要： In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. A back electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.
摘要翻译：在光电池中，在n型单晶硅衬底的主表面上除了外周的预定宽度的区域中形成i型非晶硅膜和n型非晶硅膜。形成前电极以覆盖n型单晶硅衬底的主表面上的i型非晶硅膜和n型非晶硅膜。在n型单晶硅衬底的背面的整个区域上形成i型非晶硅膜和p型非晶硅膜。在p型非晶硅膜的除外周的规定宽度以外的区域形成背面电极。光伏电池的前电极一侧的表面是初级光入射面。

5. 发明授权

US07164150B2 Photovoltaic device and manufacturing method thereof 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US07164150B2
公开(公告)日：2007-01-16
申请号：US10378609
申请日：2003-03-05
申请人： Akira Terakawa , Toshio Asaumi
发明人： Akira Terakawa , Toshio Asaumi
IPC分类号： H01L29/04 , H01L31/20
CPC分类号： H01L31/202 , H01L31/03762 , H01L31/0747 , H01L31/077 , Y02E10/548 , Y02P70/521
摘要： In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. In the photovoltaic device, an n-type crystalline substrate (11) and a p-type amorphous silicon thin film (13) are laminated with an i-type amorphous silicon thin film (12) interposed as well as an n-type amorphous silicon thin film (15) is provided on a rear surface of the crystalline silicon substrate (11) by interposing an i-type amorphous silicon thin film (14) between them. Oxygen atoms exist at interfaces between the crystalline silicon substrate (11) and the i-type amorphous silicon thin films (12), (14) in a higher concentration than that in the i-type amorphous silicon thin films (12), (14).
摘要翻译：在本发明的光电器件中，通过增加结晶硅半导体和非晶硅半导体之间的界面特性来提高结特征。在光电器件中，n型晶体衬底（11）和p型非晶硅薄膜（13）与插入的i型非晶硅薄膜（12）以及n型非晶硅薄膜通过在它们之间插入i型非晶硅薄膜（14），在晶体硅衬底（11）的后表面上设置薄膜（15）。氧原子存在于晶体硅衬底（11）和i型非晶硅薄膜（12），（14）之间的界面处，其浓度高于i型非晶硅薄膜（12），（14））。

6. 发明授权

US06878921B2 Photovoltaic device and manufacturing method thereof 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US06878921B2
公开(公告)日：2005-04-12
申请号：US10305262
申请日：2002-11-27
申请人： Mikio Taguchi , Toshio Asaumi , Akira Terakawa
发明人： Mikio Taguchi , Toshio Asaumi , Akira Terakawa
IPC分类号： C23C16/24 , H01L31/04 , H01L31/20 , H01L31/00
CPC分类号： H01L31/0747 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device having a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. The photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin layer laminated in this order on a front surface of an n-type single crystalline silicon substrate, and an i-type amorphous silicon layer and an n-type amorphous silicon layer laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon film is formed after the front surface of the single crystalline silicon substrate is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate and the i-type amorphous silicon layer.
摘要翻译：具有晶体半导体和非晶半导体薄膜的光电器件使得能够提高结特征。光电器件包括在n型单晶硅衬底的正面上依次层叠的i型非晶硅薄膜和p型非晶硅薄膜，i型非晶硅层和n型型非晶硅层按顺序层叠在单晶硅衬底的背面上，其中在单晶硅衬底的前表面暴露于等离子体放电之后，形成i型非晶硅膜，使用混合气体氢气和含硼的气体，使得硼原子可插入在单晶硅衬底和i型非晶硅层之间的界面上。

7. 发明授权

US5262695A Micromachine 失效
标题翻译：微机械
公开(公告)号：US5262695A
公开(公告)日：1993-11-16
申请号：US823459
申请日：1992-01-22
申请人： Yukinori Kuwano , Masato Nishikuni , Shigeru Noguchi , Makoto Tanaka , Hiroyuki Kuriyama , Akira Terakawa , Noboru Nakamura , Shinya Tsuda , Takeo Tsutsumi , Hiroaki Izu , Yukio Nakashima
发明人： Yukinori Kuwano , Masato Nishikuni , Shigeru Noguchi , Makoto Tanaka , Hiroyuki Kuriyama , Akira Terakawa , Noboru Nakamura , Shinya Tsuda , Takeo Tsutsumi , Hiroaki Izu , Yukio Nakashima
IPC分类号： H02N1/00 , H01L41/08
CPC分类号： H02N1/004 , Y10S310/06
摘要： An electrostatic motor for use as a power generating mechanism to be mounted on a micromachine includes a rotatable semiconductor substrate and a drive electrode disposed in proximity to the substrate. The semiconductor substrate is doped with a specified impurity element to form electromagnetic wave-static electric converters of p-n junction. When the motor is to be started, the converter in the vicinity of the electrode is irradiated with electromagnetic waves to set up an electric field between the opposed surfaces of the converter and the electrode to rotate the substrate by an electrostatic force due to the electric field.
摘要翻译：用作安装在微机械上的动力产生机构的静电电动机包括可旋转的半导体衬底和设置在衬底附近的驱动电极。半导体衬底被掺杂有特定的杂质元素以形成p-n结的电磁波静电转换器。当电动机起动时，用电磁波照射电极附近的转换器，以在转换器的相对表面和电极之间建立电场，以使由于电场的静电力使基板旋转。

8. 发明申请

US20120021561A1 PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SOLAR CELL USING SAME 审中-公开
标题翻译：等离子体处理装置和使用该方法制造太阳能电池的方法
公开(公告)号：US20120021561A1
公开(公告)日：2012-01-26
申请号：US13260601
申请日：2010-03-24
申请人： Akira Terakawa
发明人： Akira Terakawa
IPC分类号： H01L31/18 , C23C16/448
CPC分类号： C23C14/3414 , H01L31/075 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a solar cell in which qualities and thicknesses of formed films are uniformed is obtained. This method of manufacturing a solar cell includes steps of forming a substrate-side electrode (11) on a substrate (10), forming at least part of a photoelectric conversion unit (12, 13) on the substrate-side electrode by supplying source gas from projecting portions of a plasma processing apparatus (1) including a first electrode (4) having the projecting portions (4b, 24a, 24b, 24c, 24d), made of a conductive porous material, provided to cover gas supply ports (4a), and forming a rear-side electrode (14) on the photoelectric conversion unit.
摘要翻译：获得了其中形成膜的质量和厚度均匀的太阳能电池的制造方法。该制造太阳能电池的方法包括以下步骤：在基板（10）上形成基板侧电极（11），在基板侧电极上形成至少一部分光电转换单元（12,13），通过供给源气体从包括由导电多孔材料制成的具有突出部分（4b，24a，24b，24c，24d）的第一电极（4））的等离子体处理设备（1）的突出部分设置成覆盖气体供应端口（4a），并在光电转换单元上形成后侧电极（14）。

9. 发明授权

US08049101B2 Photovoltaic device 有权
标题翻译：光伏装置
公开(公告)号：US08049101B2
公开(公告)日：2011-11-01
申请号：US11237788
申请日：2005-09-29
申请人： Akira Terakawa
发明人： Akira Terakawa
IPC分类号： H01L31/042
CPC分类号： H01L31/0747 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： In the photovoltaic devices comprising a substantially intrinsic amorphous silicon layer containing hydrogen between an n-type single-crystal silicon substrate and a p-type amorphous silicon layer containing hydrogen, the photovoltaic device according to the present invention comprises a trap layer that contains less hydrogen than the intrinsic amorphous silicon layer between the p-type amorphous silicon layer and the intrinsic amorphous silicon layer. The trap layer reduces hydrogen diffusion from the intrinsic amorphous silicon layer to the p-type amorphous silicon layer.
摘要翻译：在包括在n型单晶硅衬底和含有氢的p型非晶硅层之间含有氢的基本上本征的非晶硅层的光电器件中，根据本发明的光伏器件包括含有较少氢的捕获层优于p型非晶硅层和本征非晶硅层之间的本征非晶硅层。捕集层减少从本征非晶硅层到p型非晶硅层的氢扩散。

10. 发明授权

US07893351B2 Photovoltaic device and manufacturing method thereof 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US07893351B2
公开(公告)日：2011-02-22
申请号：US12045247
申请日：2008-03-10
申请人： Akira Terakawa
发明人： Akira Terakawa
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/20 , H01L31/0352 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm−3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm−3.
摘要翻译：提供能够提高输出特性的光电装置。光电器件包括n型单晶硅衬底，p型非晶硅衬底和设置在n型单晶硅衬底和p型非晶硅之间的基本上本征的i型非晶硅层层。 i型非晶硅层包括：第一部分，其位于n型单晶硅衬底侧，氧浓度等于或低于1020cm-3; 以及第二部分，其位于p型非晶硅层侧，氧浓度等于或大于1020cm-3。

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