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    • 8. 发明授权
    • Solid-state imaging device, manufacturing method thereof, and electronic apparatus
    • 固态成像装置及其制造方法以及电子装置
    • US08669602B2
    • 2014-03-11
    • US13362758
    • 2012-01-31
    • Toshihiko Hayashi
    • Toshihiko Hayashi
    • H01L31/062
    • H01L27/14636H01L27/1461H01L27/14623H01L27/14625H01L27/14634H01L27/1464H01L27/14645H01L27/14685H01L27/1469
    • Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.
    • 本文公开了一种固态成像装置,其包括:层叠半导体芯片,其被配置为通过将两个或更多个半导体芯片部彼此接合而获得,并且可以通过至少接合第一半导体芯片部分获得,所述第一半导体芯片部分中的像素阵列和多层 形成布线层,其中以多层布线层彼此相对并彼此电连接的方式彼此形成逻辑电路和多层布线层的第二半导体芯片部分; 以及遮光层,被配置为由与第一和第二半导体芯片部分之间接近接合的第一和第二半导体芯片部分之一或两者的连接互连层的相同层的导电膜形成。 固态成像装置是背照式固态成像装置。