会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of forming on a semiconductor substrate a capacitor electrode having hemispherical grains
    • 在半导体衬底上形成具有半球形晶粒的电容器电极的方法
    • US06362044B1
    • 2002-03-26
    • US09665134
    • 2000-09-19
    • Akira ShimizuYukihiro MoriSatoshi Takahashi
    • Akira ShimizuYukihiro MoriSatoshi Takahashi
    • H01L218242
    • H01L28/84
    • An improved capacitor electrode made of polysilicon having a rough surface on a semiconductor substrate is formed by (a) removing a spontaneous oxidation film adhering to an amorphous silicon surface; (b) heating the amorphous silicon to a designated temperature; (c) spraying SiH4 at a designated temperature on the amorphous silicon to form an amorphous silicon/polysilicon mixed-phase active layer on the surface; (d) annealing at a designated temperature to form an HSG so as to roughen the amorphous silicon surface; (e) PH3-annealing the HSG-forming polysilicon, wherein PH3 is introduced at a designated concentration at the start of heating to a designated temperature; and (f) nitriding the amorphous silicon surface at the stated temperature by continuously introducing NH3 gas instead of PH3.
    • 通过(a)去除附着在非晶硅表面上的自发氧化膜,形成由半导体衬底上具有粗糙表面的多晶硅制成的改进的电容器电极; (b)将非晶硅加热至指定温度; (c)在指定温度下在非晶硅上喷涂SiH4,以在表面上形成非晶硅/多晶硅混合相活性层; (d)在指定温度退火以形成HSG,以粗化非晶硅表面; (e)对形成HSG的多晶硅进行PH3退火,其中在加热开始时以指定浓度引入PH3至指定温度; 和(f)通过连续引入NH 3气体代替PH 3,在所述温度下氮化非晶硅表面。
    • 4. 发明授权
    • Method for forming polycrystal silicon film for semiconductor elements
    • 半导体元件用多晶硅膜形成方法
    • US06242278B1
    • 2001-06-05
    • US09337920
    • 1999-06-22
    • Akira ShimizuSatoshi TakahashiAtsuki Fukazawa
    • Akira ShimizuSatoshi TakahashiAtsuki Fukazawa
    • H01L2100
    • H01L28/84H01L27/1085
    • A rough surface made of polysilicon grains is formed on an amorphous silicon film disposed on a semiconductor substrate by the steps of: (i) forming an amorphous silicon-polysilicon mixed-phase layer having a first density on an activated surface of the amorphous silicon film by contacting the surface with a gas containing monosilane at a first flow rate of monosilane and at a first temperature; and (ii) annealing the amorphous silicon-polysilicon mixed-phase layer to form polysilicon grains therefrom, thereby forming a rough surface made of polysilicon grains. In the above, the improvement includes using disilane in place of monosilane at a second flow rate lower than the first flow rate and at a second temperature lower than the first temperature to form an amorphous silicon-polysilicon mixed-phase layer having a second density higher than the first density. Another improvement includes saturating the reactor with hydrogen gas during the heating step.
    • 通过以下步骤在设置在半导体衬底上的非晶硅膜上形成由多晶硅颗粒制成的粗糙表面:(i)在非晶硅膜的活化表面上形成具有第一密度的非晶硅 - 多晶硅混合相层 通过使表面与含有甲硅烷的气体以第一流速的甲硅烷和第一温度接触; 和(ii)使非晶硅 - 多晶硅混合相层退火以形成多晶硅晶粒,由此形成由多晶硅颗粒制成的粗糙表面。 在上述中,改进包括以低于第一流量的第二流量和低于第一温度的第二温度使用乙硅烷代替甲硅烷,并形成第二密度较高的非晶硅 - 多晶硅混合相层 比第一密度。 另一个改进包括在加热步骤期间用氢气使反应器饱和。