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1. 发明申请

US20070024371A1 High frequency power amplifier 有权
公开(公告)号：US20070024371A1
公开(公告)日：2007-02-01
申请号：US11398627
申请日：2006-04-06
申请人： Seiki Gotou , Akira Inoue , Akira Ohta
发明人： Seiki Gotou , Akira Inoue , Akira Ohta
IPC分类号： H03F3/68
CPC分类号： H03F3/193 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014
摘要： A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.

2. 发明授权

US06833771B1 High efficiency amplifier with amplifier element, radio transmission device therewith and measuring device therefor 有权
标题翻译：具有放大器元件的高效放大器及其无线电传输装置及其测量装置
公开(公告)号：US06833771B1
公开(公告)日：2004-12-21
申请号：US09717215
申请日：2000-11-22
申请人： Akira Ohta , Akira Inoue
发明人： Akira Ohta , Akira Inoue
IPC分类号： H03H738
CPC分类号： H04B1/04 , H03H7/38
摘要： A low impedance high efficiency amplifier is connected to a low impedance isolator. The low impedance high efficiency amplifier includes a plurality of amplifiers and an output matching circuit having a harmonic processing circuit arranged between a fundamental wave regulator circuit/a final stage amplifier and the low impedance isolator.
摘要翻译：低阻抗高效率放大器连接到低阻抗隔离器。低阻抗高效率放大器包括多个放大器和具有布置在基波调节器电路/末级放大器与低阻抗隔离器之间的谐波处理电路的输出匹配电路。

3. 发明授权

US06177841B1 High frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：US06177841B1
公开(公告)日：2001-01-23
申请号：US09258069
申请日：1999-02-26
申请人： Akira Ohta , Akira Inoue , Tetsuya Heima
发明人： Akira Ohta , Akira Inoue , Tetsuya Heima
IPC分类号： H03F3191
CPC分类号： H03F3/601 , H01L2224/48091 , H03F1/0205 , H03F1/565 , H01L2924/00014
摘要： A high frequency power amplifier with reduced power loss and improved power amplification efficiency has an output matching circuit providing an open circuit to a second harmonic and a short circuit to a third harmonic of a high frequency signal. This is accomplished by, for example, adjusting lengths of a drain bias line and a plurality of signal lines so that the phase of S parameter S11 (input reflection coefficient) to the second harmonic is from −80° to 140°, and the phase of S parameter S11 to the third harmonic is from 160° to 220°. The line length of each line in an input matching circuit is also adjusted so that the phase of S parameter S22 (output reflection coefficient) at the fundamental frequency is between +5° to −75°.
摘要翻译：具有降低的功率损耗和提高的功率放大效率的高频功率放大器具有输出匹配电路，其提供对二次谐波的开路和与高频信号的三次谐波的短路。这通过例如调整漏极偏置线和多条信号线的长度来实现，使得S参数S11（输入反射系数）相对于二次谐波的相位为-80°至140°，相位 S参数S11与三次谐波的关系为160°〜220°。也调整输入匹配电路中每条线的线路长度，使得基频下的S参数S22（输出反射系数）的相位在+ 5°至-75°之间。

4. 发明授权

US07161433B2 High-frequency amplifier 有权
标题翻译：高频放大器
公开(公告)号：US07161433B2
公开(公告)日：2007-01-09
申请号：US10520077
申请日：2003-06-11
申请人： Hiroomi Ueda , Shintaro Shinjo , Noriharu Suematsu , Kazutomi Mori , Akira Inoue , Akira Ohta , Hiroaki Seki
发明人： Hiroomi Ueda , Shintaro Shinjo , Noriharu Suematsu , Kazutomi Mori , Akira Inoue , Akira Ohta , Hiroaki Seki
IPC分类号： H03F3/68
CPC分类号： H03F3/602 , H03F1/32 , H03F3/195 , H03F3/211 , H03F2200/18 , H03F2200/366 , H03F2200/451
摘要： A high frequency amplifier includes a constant voltage driven amplifier 1 using as its amplifying element a bipolar transistor 7 with its base biased by a constant voltage, and a constant current driven amplifier 2 using as its amplifying element a bipolar transistor 8 with its base biased by a constant current. The idle current of the constant current driven amplifier 2 is set at a low value. In accordance with the idle current, the idle current of the constant voltage driven amplifier 1 is adjusted, and the two amplifiers are combined in parallel.
摘要翻译：高频放大器包括恒压驱动放大器1，其使用其基极由恒定电压偏置的双极型晶体管7作为其放大元件;以及恒流驱动放大器2，其使用双极晶体管8，其基极由恒流。恒流驱动放大器2的空闲电流被设定为低值。根据空闲电流，调整恒压驱动放大器1的空闲电流，并联两个放大器。

5. 发明授权

US06998943B2 High-frequency power amplifier 失效
标题翻译：高频功率放大器
公开(公告)号：US06998943B2
公开(公告)日：2006-02-14
申请号：US10756624
申请日：2004-01-14
申请人： Akira Ohta , Akira Inoue , Kazuhiro Ueda
发明人： Akira Ohta , Akira Inoue , Kazuhiro Ueda
IPC分类号： H01P3/08 , H01P5/00
CPC分类号： H05K1/0251 , H01L23/66 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , H05K1/0253 , H05K1/0298 , H05K2201/093 , H05K2201/09845 , H01L2924/00
摘要： A second strip conductor is located, in a lamination direction of a multilayer substrate, at a is different position from that of a first strip conductor. A first grounding conductor and a second grounding conductor are disposed sequentially in the lamination direction of the multilayer substrate and sandwich the first strip conductor and the second strip conductor. The first grounding conductor includes a first grounding conductor portion for a wiring prohibited area in which no wiring may be placed, and a second grounding conductor portion for an area other than the wiring prohibited area. The second grounding conductor portion is positioned, in the lamination direction of the multilayer substrate, at a location is different from that of the first grounding conductor portion.
摘要翻译：第二带状导体在多层基板的层叠方向上位于与第一带状导体的位置不同的位置。第一接地导体和第二接地导体沿多层基板的层叠方向依次配置，并夹着第一带状导体和第二带状导体。第一接地导体包括用于不布线的布线禁止区域的第一接地导体部分和除了布线禁止区域之外的区域的第二接地导体部分。第二接地导体部在多层基板的层叠方向上位于与第一接地导体部的位置不同的位置。

6. 发明授权

US06876258B2 High-frequency amplifier and radio transmission device with circuit scale and current consumption reduced to achieve high efficiency 有权
标题翻译：高频放大器和无线电传输设备具有电路规模和电流消耗降低，实现高效率
公开(公告)号：US06876258B2
公开(公告)日：2005-04-05
申请号：US09987579
申请日：2001-11-15
申请人： Akira Ohta , Akira Inoue
发明人： Akira Ohta , Akira Inoue
IPC分类号： H03F3/60 , H01P1/203 , H03F3/189 , H03F3/193 , H03H7/01 , H04B1/04
CPC分类号： H01P1/2039 , H03F1/56 , H03F3/601 , H03F2200/387 , H03H7/0115
摘要： A high-frequency amplifier in a power amplifier module includes, on a substrate on which the amplifier is formed, first- and second-stage amplifiers for receiving and amplifying an input signal, a harmonic processing circuit for matching of harmonics included in an output signal from the second-stage amplifier, and a low-pass filter receiving an output from the harmonic processing circuit to selectively pass a signal to be supplied to a non-reciprocal circuit element using a predetermined frequency as a cutoff frequency.
摘要翻译：功率放大器模块中的高频放大器在其上形成有放大器的基板上包括用于接收和放大输入信号的第一和第二级放大器，用于匹配包括在输出信号中的谐波的谐波处理电路接收来自谐波处理电路的输出的低通滤波器，以选择性地将要提供给不可逆电路元件的信号作为截止频率使用预定频率。

7. 发明授权

US06600383B2 Radio-frequency composite element 有权
标题翻译：射频复合元件
公开(公告)号：US06600383B2
公开(公告)日：2003-07-29
申请号：US09729087
申请日：2000-12-05
申请人： Akira Ohta , Akira Inoue
发明人： Akira Ohta , Akira Inoue
IPC分类号： H01P132
CPC分类号： H01P1/36 , H01L2924/16152
摘要： A radio-frequency composite element includes an element substrate carrying a high-efficiency amplifier, a transmission line, and an isolator. The amplifier is a semiconductor element mounted on a multilayer substrate and enveloped by a cover. The transmission line furnished on the element substrate connecting an output terminal of the high-efficiency amplifier with an input terminal of the isolator, so that the components make up an integral composite element.
摘要翻译：射频复合元件包括承载高效放大器，传输线和隔离器的元件衬底。放大器是安装在多层基板上并由盖子包围的半导体元件。配置在元件基板上的传输线，其将高效放大器的输出端子与隔离器的输入端子连接，使得这些部件构成一体的复合元件。

8. 发明授权

US07310019B2 High frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：US07310019B2
公开(公告)日：2007-12-18
申请号：US11398627
申请日：2006-04-06
申请人： Seiki Gotou , Akira Inoue , Akira Ohta
发明人： Seiki Gotou , Akira Inoue , Akira Ohta
IPC分类号： H03F3/68
CPC分类号： H03F3/193 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014
摘要： A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.
摘要翻译：高频功率放大器包括：多指晶体管，其包括并联电连接的晶体管单元; 连接到晶体管单元的栅电极的输入侧匹配电路; 和谐振电路，每个谐振电路连接在晶体管单元的相应一个的栅电极和输入侧匹配电路之间。谐振电路以晶体管的工作频率的二次谐波或在以二次谐波为中心的预定范围内的频率谐振，并且作为短路或从栅极观察到的低阻抗。

9. 发明申请

US20060152286A1 High-frequency amplifier 有权
标题翻译：高频放大器
公开(公告)号：US20060152286A1
公开(公告)日：2006-07-13
申请号：US10520077
申请日：2003-06-11
申请人： Hiroomi Ueda , Shintaro Shinjo , Noriharu Suematsu , Kazutomi Mori , Akira Inoue , Akira Ohta , Hiroaki Seki
发明人： Hiroomi Ueda , Shintaro Shinjo , Noriharu Suematsu , Kazutomi Mori , Akira Inoue , Akira Ohta , Hiroaki Seki
IPC分类号： H03F3/68
CPC分类号： H03F3/602 , H03F1/32 , H03F3/195 , H03F3/211 , H03F2200/18 , H03F2200/366 , H03F2200/451
摘要： A high frequency amplifier includes a constant voltage driven amplifier 1 using as its amplifying element a bipolar transistor 7 with its base biased by a constant voltage, and a constant current driven amplifier 2 using as its amplifying element a bipolar transistor 8 with its base biased by a constant current. The idle current of the constant current driven amplifier 2 is set at a low value. In accordance with the idle current, the idle current of the constant voltage driven amplifier 1 is adjusted, and the two amplifiers are combined in parallel.
摘要翻译：高频放大器包括恒压驱动放大器1，其使用其基极由恒定电压偏置的双极型晶体管7作为其放大元件;以及恒流驱动放大器2，其使用双极晶体管8，其基极由恒流。恒流驱动放大器2的空闲电流被设定为低值。根据空闲电流，调整恒压驱动放大器1的空闲电流，并联两个放大器。

10. 发明授权

US07061329B2 Semiconductor device having balanced circuit for use in high frequency band 有权
标题翻译：具有用于高频带的平衡电路的半导体器件
公开(公告)号：US07061329B2
公开(公告)日：2006-06-13
申请号：US10792856
申请日：2004-03-05
申请人： Akira Inoue , Akira Ohta , Seiki Goto
发明人： Akira Inoue , Akira Ohta , Seiki Goto
IPC分类号： H03F3/191
CPC分类号： H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6644 , H01L2224/451 , H01L2224/48091 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/0105 , H01L2924/01068 , H01L2924/01072 , H01L2924/01075 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F1/565 , H03F3/602 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor chip for amplification is connected between input-side and output-side matching circuits, and each of matching circuits includes balanced circuits which receive signals different in phase by 180 degrees, divided from an input signal. The balanced circuits are connected at a virtual grounding point, which is used as a grounding point sensitive to RF characteristics in an IPD. Thus, a semiconductor device can be free from influence of variations of grounding wires and can be reduced in size, weight, and cost.
摘要翻译：用于放大的半导体芯片连接在输入侧和输出侧匹配电路之间，并且每个匹配电路包括从输入信号中分离出相位不同180度的信号的平衡电路。平衡电路连接在虚拟接地点，用作IPD中对RF特性敏感的接地点。因此，半导体器件可以不受接地线的变化的影响，并且可以减小尺寸，重量和成本。

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