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1. 发明授权

US07510981B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07510981B2
公开(公告)日：2009-03-31
申请号：US11542219
申请日：2006-10-04
申请人： Akira Mitsuiki , Tomoo Nakayama , Osamu Fujita
发明人： Akira Mitsuiki , Tomoo Nakayama , Osamu Fujita
IPC分类号： H01L21/302
CPC分类号： H01L21/76224
摘要： A semiconductor device includes an element isolation film, which exhibits less variations in the height dimension from the surface of the substrate and has a desired height dimension from the surface of the substrate. A process for manufacturing a semiconductor device includes: providing a predetermined pattern of a silicon nitride film and a protective film which covers the silicon nitride film, on a semiconductor substrate; selectively etching the semiconductor substrate using the protective film as a mask to form a trenched portion; removing the protective film to expose the silicon nitride film; depositing an element isolation film, so as to fill the trenched portion therewith and cover the silicon nitride film; removing the element isolation film formed on the silicon nitride film by polishing thereof until the silicon nitride film is exposed; and removing the silicon nitride film.
摘要翻译：半导体器件包括元件隔离膜，该元件隔离膜在与衬底表面的高度尺寸上的变化较小，并且具有从衬底表面所需的高度尺寸。一种制造半导体器件的方法包括：在半导体衬底上提供氮化硅膜的预定图案和覆盖氮化硅膜的保护膜; 使用保护膜作为掩模选择性地蚀刻半导体衬底以形成沟槽部分; 去除保护膜以暴露氮化硅膜; 沉积元件隔离膜，以便用其填充沟槽部分并覆盖氮化硅膜; 通过研磨除去在氮化硅膜上形成的元件隔离膜，直到氮化硅膜露出为止; 并除去氮化硅膜。

2. 发明申请

US20070087520A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070087520A1
公开(公告)日：2007-04-19
申请号：US11542219
申请日：2006-10-04
申请人： Akira Mitsuiki , Tomoo Nakayama , Osamu Fujita
发明人： Akira Mitsuiki , Tomoo Nakayama , Osamu Fujita
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A semiconductor device includes an element isolation film, which exhibits less variations in the height dimension from the surface of the substrate and has a desired height dimension from the surface of the substrate. A process for manufacturing a semiconductor device includes: providing a predetermined pattern of a silicon nitride film and a protective film which covers the silicon nitride film, on a semiconductor substrate; selectively etching the semiconductor substrate using the protective film as a mask to form a trenched portion; removing the protective film to expose the silicon nitride film; depositing an element isolation film, so as to fill the trenched portion therewith and cover the silicon nitride film; removing the element isolation film formed on the silicon nitride film by polishing thereof until the silicon nitride film is exposed; and removing the silicon nitride film.
摘要翻译：半导体器件包括元件隔离膜，该元件隔离膜在与衬底表面的高度尺寸上的变化较小，并且具有从衬底表面所需的高度尺寸。一种制造半导体器件的方法包括：在半导体衬底上提供氮化硅膜的预定图案和覆盖氮化硅膜的保护膜; 使用保护膜作为掩模选择性地蚀刻半导体衬底以形成沟槽部分; 去除保护膜以暴露氮化硅膜; 沉积元件隔离膜，以便用其填充沟槽部分并覆盖氮化硅膜; 通过研磨除去在氮化硅膜上形成的元件隔离膜，直到氮化硅膜露出为止; 并除去氮化硅膜。

3. 发明授权

US07862736B2 Method of cleaning plasma etching apparatus, and thus-cleanable plasma etching apparatus 失效
标题翻译：等离子体蚀刻装置的清洗方法，等离子体蚀刻装置
公开(公告)号：US07862736B2
公开(公告)日：2011-01-04
申请号：US11633530
申请日：2006-12-05
申请人： Tomoo Nakayama
发明人： Tomoo Nakayama
IPC分类号： H01L21/00
CPC分类号： B08B7/0035 , H01J37/32862 , H01J37/32935
摘要： Method of cleaning a plasma etching apparatus capable of suppressing variation in line width among wafers in a single lot, and improving throughput in the cleaning process, includes steps of supplying a cleaning gas into a chamber of a plasma etching apparatus; igniting a plasma of the cleaning gas in the chamber; and allowing plasma cleaning to proceed in the chamber, by bringing the cleaning gas in plasma form into contact with a deposit adhered on the inner wall of the chamber so as to etch off the deposit, wherein in the step of plasma cleaning in the chamber, intensity of plasma emission ascribable to the deposit adhered on the inner wall of the chamber is detected in a time-dependent manner, and the plasma cleaning in the chamber is terminated based on changes in the intensity of the plasma emission.
摘要翻译：清洗能够抑制一批中的晶片之间的线宽变化并且提高清洗处理中的生产量的等离子体蚀刻装置的方法包括将清洁气体供应到等离子体蚀刻装置的室中的步骤; 点燃室内的清洁气体的等离子体; 并且通过使等离子体形式的清洁气体与附着在所述室的内壁上的沉积物接触以允许等离子体清洗在腔室中进行，从而蚀刻掉沉积物，其中在室中进行等离子体清洗的步骤中，以时间依赖的方式检测归因于附着在室内壁上的沉积物的等离子体发射强度，并且基于等离子体发射强度的变化来终止腔室中的等离子体清洁。

4. 发明申请

US20100221912A1 Method of Manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20100221912A1
公开(公告)日：2010-09-02
申请号：US12656981
申请日：2010-02-22
申请人： Tomoo Nakayama , Yoshiko Kasama , Eiichi Fujikura , Atsushi Kikuchi
发明人： Tomoo Nakayama , Yoshiko Kasama , Eiichi Fujikura , Atsushi Kikuchi
IPC分类号： H01L21/768 , H01L21/306
CPC分类号： H01L21/02063 , H01L21/28518 , H01L21/76814
摘要： A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.
摘要翻译：制造半导体器件的方法包括通过干蚀刻除去形成在含Ni硅化物层的顶表面上的绝缘层从而至少部分地暴露含Ni硅化物层的工艺; 以及使用具有还原功能的还原水清洗含Ni硅化物层的暴露部分的工艺。

5. 发明申请

US20060044635A1 Image file processing method and related technique thereof 审中-公开
标题翻译：图像文件处理方法及其相关技术
公开(公告)号：US20060044635A1
公开(公告)日：2006-03-02
申请号：US11216191
申请日：2005-09-01
申请人： Masato Suzuki , Shiro Yoshioka , Tomoo Nakayama , Takashi Okamoto
发明人： Masato Suzuki , Shiro Yoshioka , Tomoo Nakayama , Takashi Okamoto
IPC分类号： H04N1/40
CPC分类号： G06F16/58 , G06F16/51
摘要： An image processing method, comprising registering in advance, to a database, fundamental information and additional information related with the fundamental information, obtaining a first image file, extracting a characteristic information from the first image file, searching a fundamental information of the database which is similar to the characteristic information; and getting a first additional information related with the fundamental information.
摘要翻译：一种图像处理方法，包括预先注册到数据库，基本信息和与基本信息相关的附加信息，获得第一图像文件，从第一图像文件中提取特征信息，搜索数据库的基本信息，该基本信息是类似于特征信息; 并获得与基本信息相关的第一个附加信息。

6. 发明申请

US20070131245A1 Method of cleaning plasma etching apparatus, and thus-cleanable plasma etching apparatus 失效
标题翻译：等离子体蚀刻装置的清洗方法，等离子体蚀刻装置
公开(公告)号：US20070131245A1
公开(公告)日：2007-06-14
申请号：US11633530
申请日：2006-12-05
申请人： Tomoo Nakayama
发明人： Tomoo Nakayama
IPC分类号： B08B6/00 , C23F1/00 , H01L21/306
CPC分类号： B08B7/0035 , H01J37/32862 , H01J37/32935
摘要： Aimed at providing a method of cleaning a plasma etching apparatus capable of suppressing variation in line width among wafers in a single lot, and improving throughput in the cleaning process, a method of cleaning a plasma etching apparatus of the present invention has steps of supplying a cleaning gas into a chamber 102 of a plasma etching apparatus 100; igniting a plasma of the cleaning gas in the chamber 102; and allowing plasma cleaning to proceed in the chamber 102, by bringing the cleaning gas in a plasma form into contact with a deposit adhered on the inner wall of the chamber 102 so as to etch off the deposit, wherein in the step of plasma cleaning in the chamber, intensity of plasma emission ascribable to the deposit adhered on the inner wall of the chamber 102 is detected in a time-dependent manner, and the plasma cleaning in the chamber 102 is terminated based on changes in the intensity of the plasma emission.
摘要翻译：本发明的等离子体蚀刻装置的清洗方法为了提供能够抑制一批中的晶片之间的线宽的变化的清洗方法，提高清洗工序的生产率，具有以下步骤：将气体清洗到等离子体蚀刻装置100的室102中; 点燃室102中的清洁气体的等离子体; 并且通过使等离子体形式的清洁气体与粘附在室102的内壁上的沉积物接触以使蚀刻掉沉积物，允许等离子体清洁在腔室102中进行，其中在等离子体清洗步骤以时间依赖的方式检测室，附着在室102的内壁上的沉积物的等离子体发射强度，并且基于等离子体发射强度的变化来终止室102中的等离子体清洁。

7. 发明授权

US08293653B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08293653B2
公开(公告)日：2012-10-23
申请号：US12656981
申请日：2010-02-22
申请人： Tomoo Nakayama , Yoshiko Kasama , Eiichi Fujikura , Atsushi Kikuchi
发明人： Tomoo Nakayama , Yoshiko Kasama , Eiichi Fujikura , Atsushi Kikuchi
IPC分类号： H01L21/302
CPC分类号： H01L21/02063 , H01L21/28518 , H01L21/76814
摘要： A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.
摘要翻译：制造半导体器件的方法包括通过干蚀刻除去形成在含Ni硅化物层的顶表面上的绝缘层从而至少部分地暴露含Ni硅化物层的工艺; 以及使用具有还原功能的还原水清洗含Ni硅化物层的暴露部分的工艺。

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