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    • 2. 发明授权
    • Light diffusive coating and a lamp having the coating
    • 光漫射涂层和具有该涂层的灯
    • US4721877A
    • 1988-01-26
    • US778001
    • 1985-09-20
    • Akira KawakatsuToshio KarinoYooji Yuge
    • Akira KawakatsuToshio KarinoYooji Yuge
    • H01K1/28C03C17/23C03C17/27C23C16/18G02B5/02H01J61/35H01K1/32H01K1/26H01K1/50
    • G02B5/0226C03C17/23C03C17/27C23C16/18G02B5/0247G02B5/0278H01J61/35H01K1/32C03C2217/212C03C2217/229C03C2218/11C03C2218/32C03C2218/322
    • A light diffusive coating having an excellent light diffusion effect, a method of forming the coating and a halogen lamp with the coating. The light diffusive coating includes bubbles within a continuous coating consisting of a metal oxide formed on a base. The method of forming the light diffusive coating is made by the inclusion of bubbles formed by the evaporization of a high boiling-point organic solvent within the metal oxide coating formed by the application of a combination of an organo-metallic compound with a high boiling-point organic solvent to a base surface, and the subsequent decomposition of the organo-metallic compound on baking. The halogen lamp has a porous light diffusive coating formed on the coating established on the surface of the outer vessel which allows visible light to pass through but reflects infra-red light, so that strain, caused by the difference in thermal expansion efficient of the structural material of the outer vessel and the structural material of the light diffusive layer occuring when the outer vessel is at a high temperature, is absorbed by the porous structure, and prevents peeling.
    • 具有优异的光扩散效果的光漫射涂层,形成涂层的方法和具有涂层的卤素灯。 光漫射涂层包括由形成在基底上的金属氧化物组成的连续涂层内的气泡。 形成光漫射涂层的方法是通过在通过应用有机金属化合物与高沸点有机溶剂的组合形成的金属氧化物涂层内包含由高沸点有机溶剂蒸发而形成的气泡, 将有机溶剂滴加到基体表面,随后在烘烤时分解有机金属化合物。 卤素灯具有形成在外部容器表面上的涂层上的多孔光扩散涂层,其允许可见光通过但反射红外光,使得由结构的热膨胀效率的差异引起的应变 外部容器的材料和外部容器处于高温时发生的光漫射层的结构材料被多孔结构吸收,并且防止剥离。
    • 4. 发明授权
    • Photocatalyzer and lamp or lighting fixture having a photocatalyzer
    • 具有光催化剂的光催化剂和灯或照明器具
    • US06242862B1
    • 2001-06-05
    • US09219902
    • 1998-12-24
    • Akira Kawakatsu
    • Akira Kawakatsu
    • H01J1716
    • B01J35/004B01J35/002H01J61/35
    • This invention provides a photocatalytic membrane and a lamp and lighting fixture using such a membrane. The membrane is formed using an ultra fine particle dispersed liquid coating method providing improved adhesion of the membrane to a base body and provides a photocatalyzer that has a satisfactory light transmission factor and a lamp and a lighting fixture using it. The membrane is made of mainly ultra fine particles of titanium oxide, which enter into the uneven surface portions of a ground layer and are closely fitted thereto via the ground layer made of a metallic oxide with an uneven surface formed on the surface is formed on the base body. When the ground layer is made of metallic oxide and porous, the uneven surface is formed on the surface of the ground layer. Concave portions of the ground layer may be penetrated to the surface of the base body or a metallic oxide structural layer provided with a lot of penetrating holes may be formed on the surface of a photocatalytic membrane. Silicon oxide, titanium oxide and aluminum oxide are usable as a metallic oxide.
    • 本发明提供一种使用这种膜的光催化膜和灯和照明器具。 使用超细颗粒分散液体涂覆方法形成膜,其提供膜对基体的改进的粘附性,并提供具有令人满意的透光率的光催化剂和使用其的灯和照明器具。 膜主要由氧化钛的超细颗粒制成,其进入接地层的不平坦表面部分并且通过由形成在表面上的具有不平坦表面的金属氧化物制成的接地层紧密地配合在其上形成在 基体 当接地层由金属氧化物制成并且多孔时,在接地层的表面上形成不平坦的表面。 也可以在光催化膜的表面上形成接地层的凹部到基体的表面,也可以形成具有大量贯通孔的金属氧化物结构层。 氧化硅,氧化钛和氧化铝可用作金属氧化物。
    • 7. 发明授权
    • Method of fabricating a bipolar transistor
    • 制造双极晶体管的方法
    • US4873200A
    • 1989-10-10
    • US183883
    • 1988-04-20
    • Akira Kawakatsu
    • Akira Kawakatsu
    • H01L29/73H01L21/285H01L21/331H01L29/732
    • H01L29/66272H01L21/28525Y10S148/01Y10S148/011
    • A method of fabricating a bipolar transistor on a semiconductor substrate capable of operating at a high operating speed and formed in a compact construction. A first polycrystalline silicon layer is oxidized selectively to form areas for forming base electrodes and a collector electrode. Boron is implanted into the polycrystalline silicon layer in a high concentration to form the base electrodes, the silicon dioxide film is removed to form an opening from a region for forming an emitter, the side wall of the opening is oxidized, an inactive base is formed in the polycrystalline silicon layer, active base is formed in the inactive base by implanting boron in the inactive base. Then, the entire surface of the device is coated with an oxide film and a second polycrystalline silicon layer. The polycrystalline silicon layer and the oxide film are removed selectively through a reactive ion etching process to leave the second polycrystalline silicon layer only over the side wall of an opening through which an emitter is exposed. A third polycrystalline silicon layer is then formed over the entire surface and arsenic is diffused in the third polycrystalline silicon layer to form the emitter, and then a silicide film is formed over the surface of the third polycrystalline silicon layer.
    • 一种在半导体衬底上制造双极晶体管的方法,该半导体衬底能够以较高的工作速度工作并形成一个紧凑的结构。 选择性地氧化第一多晶硅层以形成用于形成基底电极和集电极的区域。 硼以高浓度注入到多晶硅层中以形成基极,去除二氧化硅膜,从形成发射极的区域形成开口,开口的侧壁被氧化,形成非活性碱 在多晶硅层中,通过在非活性碱中注入硼而在非活性碱中形成活性碱。 然后,器件的整个表面涂覆有氧化物膜和第二多晶硅层。 选择性地通过反应离子蚀刻工艺去除多晶硅层和氧化物膜,以使第二多晶硅层仅在暴露于发射体的开口的侧壁上。 然后在整个表面上形成第三多晶硅层,并且砷在第三多晶硅层中扩散以形成发射极,然后在第三多晶硅层的表面上形成硅化物膜。
    • 8. 发明授权
    • Method of fabricating bipolar semiconductor integrated circuit device
    • 双极半导体集成电路器件的制造方法
    • US4731341A
    • 1988-03-15
    • US913303
    • 1986-09-30
    • Akira Kawakatsu
    • Akira Kawakatsu
    • H01L29/73H01L21/033H01L21/285H01L21/331H01L29/732H01L21/265H01L21/385
    • H01L21/28525H01L21/033
    • An improved bipolar semiconductor integrated circuit device which has a reduced base resistance and a reduced parasitic capacitance can be provided with a small number of manufacturing steps.A two-layered film composed of both a thin oxide film and a nitride film is formed on the surface of an impurity doped layer of a first conductivity type which is formed on a semiconductor substrate. A resist layer having an overhanging cross section is formed on a selected surface of the two-layered film. A high melting metal is deposited on the surface of the structure obtained by the above step in such manner that the metal does not cover the surface of the nitride film under the overhanging portion of the resist layer. The two-layered film under the overhanging portion of the resist layer is selectively removed to expose the surface of the impurity doped layer. A semiconductor material is deposited on an entire surface of the structure obtained by the above step, the semiconductor material being deposited under the overhanging portion of the resist layer. The resist layer is exposed to expose the surface of the nitride film.Impurities of a second conductivity type are then implanted into the semiconducting material, the surface of the semiconductor oxidized, and impurities are diffused from the semiconductor material later to form a diffused region in said impurity doped layer. The exposed nitride and oxide films are then removed and a semiconductor material layer containing said first conductivity type impurities is formed on the exposed surface of the impurity doped layer.
    • 可以提供具有减小的基极电阻和降低的寄生电容的改进的双极半导体集成电路器件,其具有少量的制造步骤。 在半导体衬底上形成的第一导电类型的杂质掺杂层的表面上形成由薄氧化膜和氮化物膜构成的两层膜。 在双层膜的选定表面上形成具有悬垂截面的抗蚀剂层。 通过上述步骤获得的结构的表面上沉积高熔点金属,使得金属不覆盖抗蚀剂层的伸出部分下方的氮化物膜的表面。 选择性地去除抗蚀剂层的悬垂部分下的两层膜,以暴露杂质掺杂层的表面。 半导体材料沉积在通过上述步骤获得的结构的整个表面上,半导体材料沉积在抗蚀剂层的悬垂部分下方。 曝光抗蚀剂层以暴露氮化物膜的表面。 然后将第二导电类型的杂质注入到半导体材料中,半导体的表面被氧化,并且杂质稍后从半导体材料扩散,以在所述杂质掺杂层中形成扩散区。 然后去除暴露的氮化物和氧化物膜,并且在杂质掺杂层的暴露表面上形成包含所述第一导电型杂质的半导体材料层。
    • 9. 发明授权
    • Incandescent lamp having good color rendering properties at a high color
temperature
    • 在高色温下具有良好的颜色渲染性能的不良灯
    • US5146130A
    • 1992-09-08
    • US538328
    • 1990-06-15
    • Akira Kawakatsu
    • Akira Kawakatsu
    • G02B5/28H01K1/32
    • G02B5/282H01K1/32
    • Four different optical interference films are formed on the outer surface of an incandescent lamp to achieve good color rendering properties at a high color temperature. A first film formed on the lamp includes high and low refractive index layers alternately stacked so that the total number of layers is n (where n is odd number greater than 5) and the optical thickness thereof is 0.12.about.0.17 .mu.m. A second film formed on the first film has the low refractive index layer and the optical thickness of 0.132.about.0.2125 .mu.m, which is calculated by the equation (K+1).times.d/2, wherein K is 1.2.about.1.5 and d is the optical thickness of each refractive index layer of the first film. A third film formed on the second film has at least a high refractive index layer. The total number of refractive index layers of the third film is an odd number of 1.about.(n-4) and the optical thickness of each refractive index layer thereof is 0.144.about.0.255 .mu.m, which is calculated by the expression (K.times.d). A fourth film includes the low refractive index layer having the optical thickness of 0.0720.about.0.1275 .mu.m, which is calculated by the expression (K .times.d/2).
    • 10. 发明授权
    • Reflection mirror for reflecting visible rays and for transmitting
infrared rays from light source
    • 用于反射可见光和用于从光源发射红外线的反射镜
    • US4850661A
    • 1989-07-25
    • US171268
    • 1988-03-21
    • Akira Kawakatsu
    • Akira Kawakatsu
    • G02B5/08G02B5/10G02B5/26G02B5/28
    • G02B5/282G02B5/10
    • A reflection mirror includes a first interference filter layer arranged on one surface of a light permeable base for reflecting a large quantity of visible rays radiated from a light source and for transmitting a large quantity of infrared rays from the light source, a second interference filter layer arranged on the other surface of the base for transmitting a large amount of the infrared rays transmitting by the first intereference filter layer and for reflecting a large amount of the visible rays transmitted by the first interference filter layer toward the first interference filter layer. The infrared ray reflectance of the first interference filter layer is different from that of the second interference filter layer to increase the quantity of the infrared rays transmitted by the mirror through the second interference filter layer by a repeating reflection between the first and the second interference filter layers.
    • 反射镜包括布置在透光基底的一个表面上的第一干涉滤光层,用于反射从光源辐射的大量可见光,并从光源传输大量红外线;第二干涉滤光层 布置在基座的另一个表面上,用于传输由第一干涉滤光层传输的大量红外线,并将大量由第一干涉滤光层传输的可见光反射到第一干涉滤光层。 第一干涉滤光层的红外线反射率与第二干涉滤光层的红外线反射率不同,以通过第一干涉滤光层和第二干涉滤光片之间的重复反射来增加由反射镜透过第二干涉滤光层发送的红外线的量 层。