会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Lightning protection structure of blade for wind power generation
    • 风力发电叶片防雷结构
    • US09136685B2
    • 2015-09-15
    • US13807395
    • 2011-06-22
    • Jun SuzukiAtsutoshi Muto
    • Jun SuzukiAtsutoshi Muto
    • F03D11/00H02G13/00F03D1/06
    • H02G13/00F03D1/0658F03D1/0675F03D80/30F05B2230/50F05B2250/60Y02E10/721Y02E10/722Y02P70/523
    • A blade for wind power generation includes a lightning receptor configured to form a part of the surface of the blade, and a lightning receiving protrusion that protrudes outward from the surface of the lightning receptor. The lightning receiving protrusion is provided to a surface boundary between the blade and the lightning receptor. The surface boundary configured to protect against the lightning is positioned within a radius of a circle, which is centered on a tip of the lightning receiving protrusion and which has a radius of twice the length of the lightning receiving protrusion. A point where electric field concentration on the surface of the lightning receptor is greatest is moved from the boundary to the tip of the lightning receiving protrusion, so as to significantly reduce a possibility of blade damage associated with lightning striking the boundary when being stroke by the lightning.
    • 用于风力发电的叶片包括构造成形成叶片表面的一部分的闪电接收器,以及从闪电接收器的表面向外突出的雷电接收突起。 雷电接收突起被提供到叶片和闪电接收器之间的表面边界。 被配置为防止闪电的表面边界位于圆弧的半径范围内,圆的半径以闪电接收突起的尖端为中心,半径为闪电接收突起长度的两倍。 闪电接收器表面上的电场浓度最大的点从闪电接收突起的边界移动到闪电接收突起的尖端,以便显着地减少由雷击接收突起所引起的闪电与撞击边界相关的叶片损伤的可能性 闪电。
    • 7. 发明授权
    • Reciprocating device
    • 往复装置
    • US09120383B2
    • 2015-09-01
    • US13882643
    • 2011-10-04
    • Takahiro JindoJun Suzuki
    • Takahiro JindoJun Suzuki
    • B60L5/00B60L13/03F16C29/00H02J5/00B60M7/00
    • B60L5/005B60L13/03B60M7/00B60M7/003F16C29/005F16C29/008H02J5/005H02J50/12H05K13/0406
    • In a reciprocating device, first and second power transmission units are provided on one end side and the other end side of a track to put therebetween power receiving units which are provided on a movable body being movable along the track. Thus, when the movable body is moved close to the one end side or the other end side of the track to separate the power receiving units far from the second power transmission unit on the other end side or the first power transmission unit on the one end side, the power receiving units are able to efficiently receive the electric power from the first power transmission unit on the one end side or the second power transmission unit on the other end side which is close thereto. Therefore, it is possible to reciprocate the movable body between the both ends of the track in a simplified construction.
    • 在往复运动装置中,第一和第二动力传递单元设置在轨道的一端侧和另一端侧,以放置在设置在沿着轨道移动的可动体上的动力接收单元之间。 因此,当可移动体靠近轨道的一端侧或另一端侧移动时,将在远端的受电单元远离另一端侧的第二动力传递单元或一端的第一动力传递单元 所以受电单元能够从靠近其另一端侧的一端侧的第一动力传递单元或第二动力传递单元有效地接收电力。 因此,能够以简化的结构使可动体在轨道的两端之间往复运动。
    • 10. 发明授权
    • Semiconductor device and method for fabricating the same
    • 半导体装置及其制造方法
    • US08502301B2
    • 2013-08-06
    • US12482945
    • 2009-06-11
    • Ken SuzukiJun Suzuki
    • Ken SuzukiJun Suzuki
    • H01L29/78
    • H01L29/7848H01L21/823412H01L21/823418H01L21/823481H01L21/823807H01L21/823814H01L21/823878H01L29/165H01L29/665H01L29/66628H01L29/66636H01L29/7833
    • A semiconductor device includes an isolation region (11a) formed in a semiconductor substrate (10), an active region made of the semiconductor substrate (10) surrounded by the isolation region (11a) and having a trench portion, a MIS transistor of a first-conductivity type having a gate electrode (13) formed on the active region, a first sidewall (19) formed on a side surface of the gate electrode between the gate electrode (13) and the trench portion as viewed in the top, and a silicon mixed crystal layer (21) of the first-conductivity type, the trench portion being filled with the silicon mixed crystal layer (21) of the first-conductivity type, a substrate region provided between the trench portion and the isolation region (11a, 11b) and made of the semiconductor substrate (10), and an impurity region (22) of the first-conductivity type formed in the substrate region. The silicon mixed crystal layer (21) generates stress in a channel region of the active region.
    • 半导体器件包括形成在半导体衬底(10)中的隔离区(11a),被隔离区(11a)围绕并具有沟槽部分的半导体衬底(10)制成的有源区,第一 具有形成在有源区上的栅电极(13)的导电型,形成在栅极电极(13)与沟槽部分之间的栅电极的侧表面上的第一侧壁(19),以及 所述第一导电型的硅混晶层(21),所述沟槽部分填充有所述第一导电型的硅混晶层(21),设置在所述沟槽部分与所述隔离区域(11a, 11b),并且由半导体衬底(10)制成,以及形成在衬底区域中的第一导电类型的杂质区(22)。 硅混晶层(21)在有源区的沟道区域产生应力。