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1. 发明申请

US20050029613A1 Transparent conductive film and its manufacturing method, and photoelectric transducer comprising it 有权
标题翻译：透明导电膜及其制造方法，以及包含它的光电传感器
公开(公告)号：US20050029613A1
公开(公告)日：2005-02-10
申请号：US10432505
申请日：2001-11-20
申请人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
发明人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
IPC分类号： B32B7/02 , C03C17/34 , C23C16/40 , H01B5/14 , H01B13/00 , H01L31/0224 , H01L31/0236 , H01L31/0392 , H01L31/04 , H01L31/18 , H01L21/00 , H01L31/0232
CPC分类号： H01L31/022466 , C03C17/3464 , C03C17/3482 , C03C2217/77 , C23C16/407 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/03921 , H01L31/1884 , Y02E10/50 , Y10T428/24364
摘要： A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of χ2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of χ2 type having a degree of freedom of 10-35χ2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.
摘要翻译：透明导电膜，其中当水平轴的单位为纳米时，存在于表面上的突起的高度数分布由具有3.5至15的自由度的chi 2类型的分布函数表示，高/ 宽度比数分布由具有10-35cm 2的自由度的chi2类型的分布函数表示，高度为50-350nm的突起占70％以上，突起具有高度/宽度比为0.25-1.02，占90％以上。

2. 发明授权

US07332226B2 Transparent conductive film and its manufacturing method, and photoelectric conversion device comprising it 有权
标题翻译：透明导电膜及其制造方法，以及包含它的光电转换装置
公开(公告)号：US07332226B2
公开(公告)日：2008-02-19
申请号：US10432505
申请日：2001-11-20
申请人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
发明人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
IPC分类号： B32B17/06
CPC分类号： H01L31/022466 , C03C17/3464 , C03C17/3482 , C03C2217/77 , C23C16/407 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/03921 , H01L31/1884 , Y02E10/50 , Y10T428/24364
摘要： A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of χ2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of χ2 type having a degree of freedom of 10-35χ2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.
摘要翻译：透明导电膜，其中存在于表面上的突起的高度数分布由水平轴的单位为自由度为3.5至15的奇偶校验类型的分布函数表示，纳米，高/宽比数分布由具有10-35℃2的自由度的chi <2>类型的分布函数表示，所述突起的高度 50-350nm占70％以上，高/宽比为0.25-1.02的突起占90％以上。

3. 发明申请

US20060046026A1 Transparent conductive film and its manufacturing method, and photoelectric conversion device comprising it 审中-公开
标题翻译：透明导电膜及其制造方法，以及包含它的光电转换装置
公开(公告)号：US20060046026A1
公开(公告)日：2006-03-02
申请号：US11246756
申请日：2005-10-07
申请人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
发明人： Akira Fujisawa , Masatoshi Nara , Takahiro Asai , Yukio Sueyoshi , Kiyotaka Ichiki , Koichiro Kiyohara , Masahiro Hirata , Hiroki Ando
IPC分类号： B05D3/02 , D06N7/00 , B32B17/06
CPC分类号： H01L31/022466 , C03C17/3464 , C03C17/3482 , C03C2217/77 , C23C16/407 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/03921 , H01L31/1884 , Y02E10/50 , Y10T428/24364
摘要： A transparent conductive film wherein the height number distribution of projections present on the surface is expressed by a distribution function of X2 type having a degree of freedom of 3.5 to 15 when the unit of the horizontal axis is a nanometer, the height/width ratio number distribution is expressed by a distribution function of X2 type having a degree of freedom of 10-35X2, the projections having a height of 50-350 nm account for 70% of more, and the projections having a height/width ratio of 0.25-1.02 account for 90% or more.
摘要翻译：透明导电膜，其中存在于表面上的突起的高度数分布由具有3.5至15的自由度的X 2类型的分布函数表示，当水平轴的单位为纳米，高/宽比数分布由具有10-35×2的自由度的X 2类型的分布函数表示，凸起的高度为 50-350nm占70％以上，高/宽比为0.25-1.02的突起占90％以上。

4. 发明申请

US20050121070A1 Method for forming thin film, substrate having transparent electroconductive film and photoelectric conversion device using the substrate 有权
标题翻译：用于形成薄膜的方法，具有透明导电膜的基板和使用该基板的光电转换装置
公开(公告)号：US20050121070A1
公开(公告)日：2005-06-09
申请号：US10497367
申请日：2002-12-03
申请人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
发明人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
IPC分类号： C03C17/245 , C03C17/34 , C23C16/02 , C23C16/40 , C23C16/54 , H01L31/18 , H01L31/00
CPC分类号： C23C16/407 , C03C17/245 , C03C17/3417 , C03C17/3452 , C03C2217/211 , C03C2217/241 , C03C2218/15 , C23C16/0272 , C23C16/0281 , C23C16/545 , H01L31/1884 , Y02E10/50
摘要： The present invention provides a thin film-forming method by which, even when a thin film containing a crystalline metal oxide as the main component is formed over a wide area within a short time utilizing a thermal decomposition method, the thickness of the thin film becomes relatively uniform. A thin film-forming method of the present invention includes forming a thin film using a raw material containing a chloride of a metal, and prior to the forming of the thin film, 1) disposing metal-containing particles on the substrate, or 2) forming, at a film deposition rate slower than a film deposition rate for the thin film, a metal-containing thin film on the substrate, and wherein, in the case of the step 2), the thin film containing the metal oxide as the main component is directly formed on the metal-containing thin film.
摘要翻译：本发明提供一种薄膜形成方法，即使使用热分解方法，即使在短时间内在广泛的区域上形成含有结晶金属氧化物作为主要成分的薄膜时，薄膜的厚度变为比较均匀。本发明的薄膜形成方法包括使用含有金属氯化物的原料形成薄膜，并且在形成薄膜之前，1）在基板上设置含金属的颗粒，或2）以比薄膜成膜速度慢的成膜速度，在基板上形成含金属的薄膜，其中，在步骤2）的情况下，以金属氧化物为主体的薄膜组分直接形成在含金属的薄膜上。

5. 发明授权

US08093490B2 Method for forming thin film, substrate having transparent electroconductive film and photoelectric conversion device using the substrate 有权
标题翻译：用于形成薄膜的方法，具有透明导电膜的基板和使用该基板的光电转换装置
公开(公告)号：US08093490B2
公开(公告)日：2012-01-10
申请号：US10497367
申请日：2002-12-03
申请人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
发明人： Akira Fujisawa , Yukio Sueyoshi , Masahiro Hirata , Toru Yamamoto , Koichiro Kiyohara , Kiyotaka Ichiki
IPC分类号： H01L31/00
CPC分类号： C23C16/407 , C03C17/245 , C03C17/3417 , C03C17/3452 , C03C2217/211 , C03C2217/241 , C03C2218/15 , C23C16/0272 , C23C16/0281 , C23C16/545 , H01L31/1884 , Y02E10/50
摘要： The present invention provides a thin film-forming method by which, even when a thin film containing a crystalline metal oxide as the main component is formed over a wide area within a short time utilizing a thermal decomposition method, the thickness of the thin film becomes relatively uniform. A thin film-forming method of the present invention includes forming a thin film using a raw material containing a chloride of a metal, and prior to the forming of the thin film, 1) disposing metal-containing particles on the substrate, or 2) forming, at a film deposition rate slower than a film deposition rate for the thin film, a metal-containing thin film on the substrate, and wherein, in the case of the step 2), the thin film containing the metal oxide as the main component is directly formed on the metal-containing thin film.
摘要翻译：本发明提供一种薄膜形成方法，即使使用热分解方法，即使在短时间内在广泛的区域上形成含有结晶金属氧化物作为主要成分的薄膜时，薄膜的厚度变为比较均匀。本发明的薄膜形成方法包括使用含有金属氯化物的原料形成薄膜，并且在形成薄膜之前，1）在基板上设置含金属的颗粒，或2）以比薄膜成膜速度慢的成膜速度，在基板上形成含金属的薄膜，其中，在步骤2）的情况下，以金属氧化物为主体的薄膜组分直接形成在含金属的薄膜上。

6. 发明申请

US20050130416A1 Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate 有权
标题翻译：通过该方法形成薄膜的方法，具有薄膜的基板和使用该基板的光电转换装置
公开(公告)号：US20050130416A1
公开(公告)日：2005-06-16
申请号：US10496487
申请日：2002-12-03
申请人： Akira Fujisawa , Daisuke Arai , Kiyotaka Ichiki , Yukio Sueyoshi , Toru Yamamoto , Tsuyoshi Otani
发明人： Akira Fujisawa , Daisuke Arai , Kiyotaka Ichiki , Yukio Sueyoshi , Toru Yamamoto , Tsuyoshi Otani
IPC分类号： B60R16/02 , C03C17/245 , C03C17/34 , C23C16/02 , C23C16/40 , C23C16/54 , H01B7/08 , H01L31/18 , H01L21/44
CPC分类号： B60R16/0207 , C03C17/245 , C03C17/3417 , C03C17/3452 , C03C2217/211 , C03C2217/241 , C03C2218/15 , C23C16/0272 , C23C16/0281 , C23C16/407 , C23C16/545 , H01B7/08 , H01L31/1884 , Y02E10/50 , Y10T428/26
摘要： The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.
摘要翻译：本发明提供了一种以广泛的区域和长时间的高成膜速度形成含有金属氧化物作为主要成分的膜的方法，其膜厚相对均匀。本发明是通过热分解法以膜沉积速率形成含有金属氧化物作为主要成分的薄膜的方法，该方法使用含有金属氯化物，氧化物质和氯化氢的混合气流在基板上形成 4500nm / min。或更大，执行选自以下的至少一种：1）在混合气流中混合金属氯化物和氧化物质之前，使氯化氢与选自金属氯化物和氧化物质的至少一种接触，以及2）形成预先在其上形成有以金属氧化物为主成分的薄膜的基板的表面上预先形成缓冲层。

7. 发明申请

US20080038541A1 Method of forming thin film, substrate having thin film formed by the method, photoelectric conversion device using the substrate 审中-公开
标题翻译：通过该方法形成薄膜的方法，具有薄膜的基板，使用该基板的光电转换装置
公开(公告)号：US20080038541A1
公开(公告)日：2008-02-14
申请号：US11796249
申请日：2007-04-27
申请人： Akira Fujisawa , Daisuke Arai , Kiyotaka Ichiki , Yukio Sueyoshi , Toru Yamamoto , Tsuyoshi Otani
发明人： Akira Fujisawa , Daisuke Arai , Kiyotaka Ichiki , Yukio Sueyoshi , Toru Yamamoto , Tsuyoshi Otani
IPC分类号： B32B3/30
CPC分类号： B60R16/0207 , C03C17/245 , C03C17/3417 , C03C17/3452 , C03C2217/211 , C03C2217/241 , C03C2218/15 , C23C16/0272 , C23C16/0281 , C23C16/407 , C23C16/545 , H01B7/08 , H01L31/1884 , Y02E10/50 , Y10T428/26
摘要： The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.
摘要翻译：本发明提供了一种以广泛的区域和长时间的高成膜速度形成含有金属氧化物作为主要成分的膜的方法，其膜厚相对均匀。本发明是通过热分解法以膜沉积速率形成含有金属氧化物作为主要成分的薄膜的方法，该方法使用含有金属氯化物，氧化物质和氯化氢的混合气流在基板上形成 4500nm / min。或更大，执行选自以下的至少一种：1）在混合气流中混合金属氯化物和氧化物质之前，使氯化氢与选自金属氯化物和氧化物质的至少一种接触，以及2）形成预先在其上形成有以金属氧化物为主成分的薄膜的基板的表面上预先形成缓冲层。

8. 发明授权

US07259085B2 Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate 有权
标题翻译：通过该方法形成薄膜的方法，具有薄膜的基板和使用该基板的光电转换装置
公开(公告)号：US07259085B2
公开(公告)日：2007-08-21
申请号：US10496487
申请日：2002-12-03
申请人： Akira Fujisawa , Daisuke Arai , Kiyotaka Ichiki , Yukio Sueyoshi , Toru Yamamoto , Tsuyoshi Otani
发明人： Akira Fujisawa , Daisuke Arai , Kiyotaka Ichiki , Yukio Sueyoshi , Toru Yamamoto , Tsuyoshi Otani
IPC分类号： H01L21/443 , C23C16/40
CPC分类号： B60R16/0207 , C03C17/245 , C03C17/3417 , C03C17/3452 , C03C2217/211 , C03C2217/241 , C03C2218/15 , C23C16/0272 , C23C16/0281 , C23C16/407 , C23C16/545 , H01B7/08 , H01L31/1884 , Y02E10/50 , Y10T428/26
摘要： The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.
摘要翻译：本发明提供了一种以广泛的区域和长时间的高成膜速度形成含有金属氧化物作为主要成分的膜的方法，其膜厚相对均匀。本发明是通过热分解法以膜沉积速率形成含有金属氧化物作为主要成分的薄膜的方法，该方法使用含有金属氯化物，氧化物质和氯化氢的混合气流在基板上形成 4500nm / min。或更大，执行选自以下的至少一种：1）在混合气流中混合金属氯化物和氧化物质之前，使氯化氢与选自金属氯化物和氧化物质的至少一种接触，以及2）形成预先在其上形成有以金属氧化物为主成分的薄膜的基板的表面上预先形成缓冲层。

9. 发明授权

US06498380B1 Substrate for photoelectric conversion device, and photoelectric conversion device using the same 有权
标题翻译：光电转换装置用基板及使用其的光电转换装置
公开(公告)号：US06498380B1
公开(公告)日：2002-12-24
申请号：US09594264
申请日：2000-06-15
申请人： Tsuyoshi Otani , Yukio Sueyoshi , Akira Fujisawa , Masahiro Hirata , Akihiko Hattori
发明人： Tsuyoshi Otani , Yukio Sueyoshi , Akira Fujisawa , Masahiro Hirata , Akihiko Hattori
IPC分类号： H01L310232
CPC分类号： C03C17/3417 , C03C17/36 , C03C17/3678 , C03C2217/77 , H01L31/022466 , H01L31/022475 , H01L31/0236 , H01L31/03921 , H01L31/1884 , Y02E10/50
摘要： On a glass sheet, undercoating layers and a transparent conductive film containing tin oxide as the main component are formed in this order. The surface of the transparent conductive film is provided with roughness including convex portions and concave portions. The convex portions have a mean diameter in a range between 0.05 &mgr;m and 0.3 &mgr;m and include five convex portions or less with diameters of at least 0.5 &mgr;m per 100 &mgr;m2 of the surface. On the transparent conductive film, a photovoltaic unit and a back electrode are formed, thus obtaining a photoelectric conversion device.
摘要翻译：在玻璃板上，依次形成底涂层和含有氧化锡作为主要成分的透明导电膜。透明导电膜的表面设置有包括凸部和凹部的粗糙度。凸部的平均直径在0.05μm〜0.3μm之间的范围内，并且包括表面的直径为至少0.5μm/ m 2的五个凸部或更小的直径。在透明导电膜上形成光电单元和背面电极，从而获得光电转换装置。

10. 发明授权

US06447921B1 Low emissivity glass and glass articles made of low emissivity glass 失效
标题翻译：低辐射玻璃和低辐射玻璃制成的玻璃制品
公开(公告)号：US06447921B1
公开(公告)日：2002-09-10
申请号：US09531899
申请日：2000-03-20
申请人： Hodaka Norimatsu , Masahiro Hirata , Yukio Sueyoshi , Akira Fujisawa , Toru Yamamoto
发明人： Hodaka Norimatsu , Masahiro Hirata , Yukio Sueyoshi , Akira Fujisawa , Toru Yamamoto
IPC分类号： B32B1706
CPC分类号： C03C17/3417
摘要： A low emissivity (low-E) glass and glass articles made of the low emissivity glass are provided, which permit controlling the solar heat shading property within a certain range without spoiling the transparency and heat insulating property thereof, to thereby realize a comfortable living condition in a wide region of the world or in a wide location of installment. A plurality of metallic oxide based films comprising metallic oxide are laminated on the surface of a glass substrate. The metallic oxide based films include a tin oxide based film containing antimony (SnSbOx film), and a tin oxide based film containing fluorine (SnO2:F film), and further may include a tin oxide based film consisting essentially of tin oxide, and a silicon oxide based film. The SnSbOx film contains antimony in an amount of 0.01 to 0.2 in terms of mole ratio relative to an amount of tin (=Sb mol/Sn mol), to avoid an excessive decrease in visible light transmittance.
摘要翻译：提供由低辐射玻璃制成的低辐射率（低E）玻璃和玻璃制品，其允许将太阳能遮光性能控制在一定范围内，而不会破坏其透明性和隔热性，从而实现舒适的生活条件在世界广泛地区或分期付款的广泛地区。在玻璃基板的表面上层叠多个金属氧化物系金属氧化物系膜。金属氧化物系膜包含含有锑（SnSbOx膜）的锡氧化物系膜和含氟（SnO 2 :F膜）的氧化锡系膜，还可以含有氧化锡系膜，其主要由氧化锡构成，氧化硅基膜。 SnSbOx膜相对于锡的摩尔比（= Sbmol / Sn mol）含有0.01〜0.2的锑，以避免可见光透射率的过度降低。

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