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1. 发明授权

US5808313A Charged particle beam exposure method and charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光方法和带电粒子束曝光装置
公开(公告)号：US5808313A
公开(公告)日：1998-09-15
申请号：US892976
申请日：1997-07-15
申请人： Akio Yamada , Hiroshi Yasuda , Hidefumi Yabara , Atsushi Saito
发明人： Akio Yamada , Hiroshi Yasuda , Hidefumi Yabara , Atsushi Saito
IPC分类号： H01L21/027 , H01J37/304 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174
摘要： The object of the present invention is to ensure a correct exposure even when a single exposure apparatus is used to expose a predetermined pattern, and an exposure apparatus therefor. According to the present invention, a charged particle beam exposure method, wherein a charged particle beam having a predetermined shape is irradiated to a sample to have the surface of the sample be exposed, comprises the steps of: storing a record of a first quantity of reflected electrons or a first sample current, which is detected in accordance with the charged particle beam irradiatd to the sample when a first exposure pattern is formed in a first area of the sample; and comparing a second quantity of reflected electrons or a second sample current, which is detected in accordance with the charged particle beam irradiated to the sample when the first exposure pattern is formed in a second area of the sample, with the first quantity of the reflected electrons or the first sample current which is stored when the first area is exposed, and generating a matched or unmatched signal therefor.
摘要翻译：本发明的目的在于即使使用单一的曝光装置来曝光预定图案也能确保正确的曝光及其曝光装置。根据本发明，一种带电粒子束曝光方法，其中对样品照射具有预定形状的带电粒子束以暴露样品的表面，包括以下步骤：将第一量的反射电子或第一样品电流，当在样品的第一区域中形成第一曝光图案时，其根据被照射到样品的带电粒子束来检测; 并且比较第二量的反射电子或第二样品电流，其在样品的第二区域中形成第一曝光图案时根据照射到样品的带电粒子束检测到的第一数量的反射电子或第二样品电流，电子或第一采样电流，其在第一区域被暴露时存储，并且产生匹配或不匹配的信号。

2. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

3. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

4. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

5. 发明授权

US5719402A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5719402A
公开(公告)日：1998-02-17
申请号：US626906
申请日：1996-04-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/12 , H01J37/141
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过放大器和偏转器之间的开关电阻来减小放大器的输出中的阶跃变化期间的设定时间。预期在放大器的前级的D / A转换器的输出的阶跃变化期间产生的毛刺波形，并用校正波形抵消。在D / A转换器的输出稳定之后，该输出被采样保持，并且用平滑电路内插阶跃变化。通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，并且通过添加一匝或两匝的辅助偏转线圈来改善主偏转的响应速度。通过组合晶片区域和芯片区域中的坐标转换来减少对准时间。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

6. 发明授权

US5892237A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5892237A
公开(公告)日：1999-04-06
申请号：US815436
申请日：1997-03-11
申请人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
发明人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174
摘要： In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.
摘要翻译：在带电粒子束曝光方法及其装置中，其中用于照射的带电粒子束的强度增加到最大以提高曝光程序的通过量，因此，诸如晶片的样品的温度，升高并发生热膨胀。发生的热膨胀基于投射的带电粒子束的强度具有再现性。因此，通过监视投射的带电粒子束的强度来检测热膨胀系数。将从热膨胀获取的每个照射位置的移动距离作为用于带电粒子束偏转的补偿值被添加，以提供准确的曝光程序。

7. 发明授权

US06242751B1 Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06242751B1
公开(公告)日：2001-06-05
申请号：US09353586
申请日：1999-07-15
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： H01J37302
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还提出了一种用于执行该方法的装置。

8. 发明授权

US5757015A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5757015A
公开(公告)日：1998-05-26
申请号：US634410
申请日：1996-04-18
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还介绍了一种用于执行该方法的设备。

9. 发明授权

US6072185A Charged-particle-beam exposure device and method capable of high-speed data reading 失效
标题翻译：带电粒子束曝光装置和方法能够进行高速数据读取
公开(公告)号：US6072185A
公开(公告)日：2000-06-06
申请号：US971917
申请日：1997-11-18
申请人： Soichiro Arai , Kenichi Miyazawa , Hidefumi Yabara , Hiroshi Yasuda
发明人： Soichiro Arai , Kenichi Miyazawa , Hidefumi Yabara , Hiroshi Yasuda
IPC分类号： G03F7/20 , G06F5/00 , H01J37/302 , H01J37/317 , H01L21/027 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174 , H01J2237/31762
摘要： A device exposing a wafer to charged-particle beams in an exposure process generates a plurality of micro beams and controls deflection of each of the micro beams, relative to whether or not the micro beams reach the wafer, in accordance with control data. A data processing unit inserts data-position-adjustment data into the control data for each exposure. A first data-storage unit stores the control data, inserted with the data-position-adjustment data, and outputs the control data at a time of the exposure process. Storage positions of the control data in the first data-storage unit are adjusted by the data-position-adjustment data so that the control data can be continuously read from the first data-storage unit for maintaining a continuous exposure process.
摘要翻译：根据控制数据，在曝光处理中将晶片暴露于带电粒子束的装置产生多个微束并相对于微束是否到达晶片来控制每个微束的偏转。数据处理单元将数据位置调整数据插入到每次曝光的控制数据中。第一数据存储单元存储插入数据位置调整数据的控制数据，并在曝光处理时输出控制数据。通过数据位置调整数据来调整第一数据存储单元中的控制数据的存储位置，使得能够从第一数据存储单元连续读取控制数据，以保持连续曝光处理。

10. 发明授权

US5969365A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
公开(公告)号：US5969365A
公开(公告)日：1999-10-19
申请号：US917464
申请日：1997-08-26
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

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